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51. 发明申请

US20060138456A1 Insulating gate AlGaN/GaN HEMT 有权
公开(公告)号：US20060138456A1
公开(公告)日：2006-06-29
申请号：US11356791
申请日：2006-02-17
申请人： Primit Parikh , Umesh Mishra , Yifeng Wu
发明人： Primit Parikh , Umesh Mishra , Yifeng Wu
IPC分类号： H01L29/739
CPC分类号： H01L29/7787 , H01L23/291 , H01L23/3171 , H01L29/2003 , H01L29/432 , H01L29/518 , H01L2924/0002 , H01L2924/00
摘要： AlGaN/GaN HEMTs are disclosed having a thin AlGaN layer to reduce trapping and also having additional layers to reduce gate leakage and increase the maximum drive current. One HEMT according to the present invention comprises a high resistivity semiconductor layer with a barrier semiconductor layer on it. The barrier layer has a wider bandgap than the high resistivity layer and a 2DEG forms between the layers. Source and drain contacts contact the barrier layer, with part of the surface of the barrier layer uncovered by the contacts. An insulating layer is included on the uncovered surface of the barrier layer and a gate contact is included on the insulating layer. The insulating layer forms a barrier to gate leakage current and also helps to increase the HEMT's maximum current drive. The invention also includes methods for fabricating HEMTs according to the present invention. In one method, the HEMT and its insulating layer are fabricated using metal-organic chemical vapor deposition (MOCVD). In another method the insulating layer is sputtered onto the top surface of the HEMT in a sputtering chamber.

52. 发明申请

US20060006415A1 Wide bandgap HEMTs with source connected field plates 有权
公开(公告)号：US20060006415A1
公开(公告)日：2006-01-12
申请号：US10958970
申请日：2004-10-04
申请人： Yifeng Wu , Primit Parikh , Umesh Mishra , Marcia Moore
发明人： Yifeng Wu , Primit Parikh , Umesh Mishra , Marcia Moore
IPC分类号： H01L29/739
CPC分类号： H01L29/402 , H01L29/2003 , H01L29/41725 , H01L29/42316 , H01L29/7787
摘要： A HEMT comprising a plurality of active semiconductor layers formed on a substrate. Source electrode, drain electrode, and gate are formed in electrical contact with the plurality of active layers. A spacer layer is formed on at least a portion of a surface of said plurality of active layers and covering the gate. A field plate is formed on the spacer layer and electrically connected to the source electrode, wherein the field plate reduces the peak operating electric field in the HEMT.

53. 发明申请

US20050051800A1 Cascode amplifier structures including wide bandgap field effect transistor with field plates 有权
标题翻译：串行放大器结构，包括具有场板的宽带隙场效应晶体管
公开(公告)号：US20050051800A1
公开(公告)日：2005-03-10
申请号：US10856098
申请日：2004-05-28
申请人： Umesh Mishra , Primit Parikh , Yifeng Wu
发明人： Umesh Mishra , Primit Parikh , Yifeng Wu
IPC分类号： H01L27/06 , H01L29/06 , H01L29/20 , H01L29/24 , H01L29/40 , H01L29/423 , H01L29/778 , H01L29/812 , H01L27/10
CPC分类号： H01L29/402 , H01L27/0605 , H01L29/1608 , H01L29/2003 , H01L29/42316 , H01L29/7787 , H01L29/812
摘要： A multi-stage amplifier circuit arranged to take advantage of the desirable characteristics of non-field-plate and field plate transistors when amplifying a signal. One embodiment of a multi-stage amplifier according to the present invention comprises a non-field-plate transistor and a field-plate transistor. The field-plate transistor has at least one field plate arranged to reduce the electric field strength within the field plate transistor during operation. The non-field plate transistor is connected to the field plate transistor, with the non-field-plate providing current gain and the field plate transistor providing voltage gain. In one embodiment the non-field-plate and field plate transistors are coupled together in a cascode arrangement.
摘要翻译：多级放大器电路被布置成在放大信号时利用非场板和场板晶体管的期望特性。根据本发明的多级放大器的一个实施例包括非场板晶体管和场板晶体管。场板晶体管具有至少一个场板，其布置成在操作期间降低场板晶体管内的电场强度。非场板晶体管连接到场板晶体管，非场板提供电流增益，场板晶体管提供电压增益。在一个实施例中，非场板和场板晶体管以共源共栅布置耦合在一起。

54. 发明授权

US09096939B2 Electrolysis transistor 有权
标题翻译：电解晶体管
公开(公告)号：US09096939B2
公开(公告)日：2015-08-04
申请号：US12156178
申请日：2008-05-29
申请人： Umesh Mishra , Rakesh Lai , Likun Shen , Lee McCarthy , Primit Parikh
发明人： Umesh Mishra , Rakesh Lai , Likun Shen , Lee McCarthy , Primit Parikh
IPC分类号： C25B9/00 , C25B9/04 , C02F1/461 , C25B1/02 , C25B11/00 , C25B15/00 , C25B11/04 , C25B1/00 , C25B1/04 , C25B1/06
CPC分类号： C25B1/02 , C25B1/003 , C25B1/04 , C25B1/06 , C25B9/04 , C25B11/00 , C25B11/0447 , C25B15/00 , Y02E60/366 , Y02P20/135
摘要： An electrolysis transistor for providing high-density electrochemistry and products utilizing the same, and high-efficiency electrolysis and electrochemical processes is disclosed. The electrolysis transistor may comprise an electrolyte, one or more working electrodes for transferring charge to or from said electrolyte, and one or more gate structures for altering electrode over-voltage and modifying the barrier at the electrode-electrolyte interface, reducing the voltage necessary for electrolysis. An electrochemical or photo-electrochemical cell may incorporate one or more of these electrolysis transistors.
摘要翻译：公开了一种用于提供高密度电化学的电解晶体管和利用其的产品，以及高效电解和电化学方法。电解晶体管可以包括电解质，用于将电荷转移到所述电解质或从所述电解质转移电荷的一个或多个工作电极，以及用于改变电极过电压并改变电极 - 电解质界面处的阻挡层的一个或多个栅极结构，电解。电化学或光电化学电池可并入这些电解晶体管中的一种或多种。

55. 发明授权

US07476956B2 Gallium nitride based diodes with low forward voltage and low reverse current operation 有权
标题翻译：具有低正向电压和低反向电流操作的氮化镓基二极管
公开(公告)号：US07476956B2
公开(公告)日：2009-01-13
申请号：US10445130
申请日：2003-05-20
申请人： Primit Parikh , Umesh Mishra
发明人： Primit Parikh , Umesh Mishra
IPC分类号： H01L27/095 , H01L29/812 , H01L31/108
CPC分类号： H01L29/475 , H01L29/2003 , H01L29/872 , H01L29/88
摘要： New Group III based diodes are disclosed having a low on state voltage (Vf) and structures to keep reverse current (Irev) relatively low. One embodiment of the invention is Schottky barrier diode made from the GaN material system in which the Fermi level (or surface potential) of is not pinned. The barrier potential at the metal-to-semiconductor junction varies depending on the type of metal used and using particular metals lowers the diode's Schottky barrier potential and results in a Vf in the range of 0.1-0.3V. In another embodiment a trench structure is formed on the Schottky diodes semiconductor material to reduce reverse leakage current. and comprises a number of parallel, equally spaced trenches with mesa regions between adjacent trenches. A third embodiment of the invention provides a GaN tunnel diode with a low Vf resulting from the tunneling of electrons through the barrier potential, instead of over it. This embodiment can also have a trench structure to reduce reverse leakage current.
摘要翻译：公开了具有低导通状态电压（Vf）和保持反向电流（Irev）相对较低的结构的新的基于III族的二极管。本发明的一个实施例是由GaN材料系统制成的肖特基势垒二极管，其中费米能级（或表面电位）不被固定。金属对半导体结的势垒电位根据所使用的金属类型而变化，并且使用特定的金属降低二极管的肖特基势垒电位，并导致Vf在0.1-0.3V的范围内。在另一个实施例中，在肖特基二极管半导体材料上形成沟槽结构以减少反向漏电流。并且包括多个平行的等间距的沟槽，其间具有相邻沟槽之间的台面区域。本发明的第三实施例提供了一种具有低Vf的GaN隧道二极管，其由电子穿过势垒电位而不是在其上引起。该实施例还可以具有沟槽结构以减少反向漏电流。

56. 发明申请

US20090145771A1 Compact electric appliance for providing gas for combustion 审中-公开
标题翻译：用于提供燃气的紧凑型电器
公开(公告)号：US20090145771A1
公开(公告)日：2009-06-11
申请号：US12231097
申请日：2008-08-28
申请人： Umesh Mishra , Rakesh Lal , Lee McCarthy , Primit Parikh
发明人： Umesh Mishra , Rakesh Lal , Lee McCarthy , Primit Parikh
IPC分类号： C25B1/04 , C25B9/00 , C25B9/18
CPC分类号： C25B9/04 , C25B1/04 , F23D14/28 , Y02E60/366 , Y02P20/134
摘要： Devices, systems and methods for improved electrical appliances which allow for efficient and safe production of hydrogen and oxygen gas for a flame are disclosed. An appliance for providing gas for combustion may comprise a water inlet, a power source, and an electrolyzer with at least one electrolysis transistor generating hydrogen and oxygen. The appliance may also comprise a gas handling unit for collecting the output of the electrolyzer and transporting it to a burner, and an output interface.
摘要翻译：公开了用于改进电器的装置，系统和方法，其允许用于火焰的氢气和氧气的有效和安全的生产。用于提供用于燃烧的气体的装置可以包括进水口，电源和具有产生氢气和氧气的至少一个电解晶体管的电解器。设备还可以包括用于收集电解器的输出并将其输送到燃烧器的气体处理单元和输出接口。

57. 发明授权

US06949774B2 Gallium nitride based diodes with low forward voltage and low reverse current operation 有权
标题翻译：具有低正向电压和低反向电流操作的氮化镓基二极管
公开(公告)号：US06949774B2
公开(公告)日：2005-09-27
申请号：US10163944
申请日：2002-06-06
申请人： Primit Parikh , Umesh Mishra
发明人： Primit Parikh , Umesh Mishra
IPC分类号： H01L29/20 , H01L29/22 , H01L29/47 , H01L29/872 , H01L29/88 , H01L29/861 , H01L29/40 , H01L29/866
CPC分类号： H01L29/475 , H01L29/2003 , H01L29/872 , H01L29/88
摘要： New Group III based diodes are disclosed having a low on state voltage (Vf), and structures to keep reverse current (Irev) relatively low. One embodiment of the invention is Schottky barrier diode made from the GaN material system in which the Fermi level (or surface potential) of is not pinned. The barrier potential at the metal-to-semiconductor junction varies depending on the type of metal used and using particular metals lowers the diode's Schottky barrier potential and results in a Vf in the range of 0.1-0.3V. In another embodiment a trench structure is formed on the Schottky diodes semiconductor material to reduce reverse leakage current. and comprises a number of parallel, equally spaced trenches with mesa regions between adjacent trenches. A third embodiment of the invention provides a GaN tunnel diode with a low Vf resulting from the tunneling of electrons through the barrier potential, instead of over it. This embodiment can also have a trench structure to reduce reverse leakage current.
摘要翻译：公开了具有低导通状态电压（V SUB）的新的基于III族的二极管，以及保持反向电流（I SUB）的结构相对较低。本发明的一个实施例是由GaN材料系统制成的肖特基势垒二极管，其中费米能级（或表面电位）不被固定。金属 - 半导体结的势垒电位根据所使用的金属的种类而变化，并且使用特定的金属降低了二极管的肖特基势垒电位，并导致在0.1-0.3V的范围内的V < 。在另一个实施例中，在肖特基二极管半导体材料上形成沟槽结构以减少反向漏电流。并且包括多个平行的等间距的沟槽，其间具有相邻沟槽之间的台面区域。本发明的第三实施例提供了由电子穿过势垒电位而不是在其上的隧穿形成的具有低V bias的GaN隧道二极管。该实施例还可以具有沟槽结构以减少反向漏电流。

58. 发明授权

US07994512B2 Gallium nitride based diodes with low forward voltage and low reverse current operation 有权
标题翻译：具有低正向电压和低反向电流操作的氮化镓基二极管
公开(公告)号：US07994512B2
公开(公告)日：2011-08-09
申请号：US11173035
申请日：2005-06-30
申请人： Primit Parikh , Umesh Mishra
发明人： Primit Parikh , Umesh Mishra
IPC分类号： H01L29/861 , H01L29/88 , H01L29/20
CPC分类号： H01L29/475 , H01L29/2003 , H01L29/872 , H01L29/88
摘要： New Group III based diodes are disclosed having a low on state voltage (Vf) and structures to keep reverse current (Irev) relatively low. One embodiment of the invention is Schottky barrier diode made from the GaN material system in which the Fermi level (or surface potential) of is not pinned. The barrier potential at the metal-to-semiconductor junction varies depending on the type of metal used and using particular metals lowers the diode's Schottky barrier potential and results in a Vf in the range of 0.1-0.3V. In another embodiment a trench structure is formed on the Schottky diodes semiconductor material to reduce reverse leakage current. and comprises a number of parallel, equally spaced trenches with mesa regions between adjacent trenches. A third embodiment of the invention provides a GaN tunnel diode with a low Vf resulting from the tunneling of electrons through the barrier potential, instead of over it. This embodiment can also have a trench structure to reduce reverse leakage current.
摘要翻译：公开了具有低导通状态电压（Vf）和保持反向电流（Irev）相对较低的结构的新的基于III族的二极管。本发明的一个实施例是由GaN材料系统制成的肖特基势垒二极管，其中费米能级（或表面电位）不被固定。金属对半导体结的势垒电位根据所使用的金属类型而变化，并且使用特定的金属降低二极管的肖特基势垒电位，并导致Vf在0.1-0.3V的范围内。在另一个实施例中，在肖特基二极管半导体材料上形成沟槽结构以减少反向漏电流。并且包括多个平行的等间距的沟槽，其间具有相邻沟槽之间的台面区域。本发明的第三实施例提供了一种具有低Vf的GaN隧道二极管，其由电子穿过势垒电位而不是在其上引起。该实施例还可以具有沟槽结构以减少反向漏电流。

59. 发明申请

US20050242366A1 Gallium nitride based diodes with low forward voltage and low reverse current operation 有权
标题翻译：具有低正向电压和低反向电流操作的氮化镓基二极管
公开(公告)号：US20050242366A1
公开(公告)日：2005-11-03
申请号：US11173035
申请日：2005-06-30
申请人： Primit Parikh , Umesh Mishra
发明人： Primit Parikh , Umesh Mishra
IPC分类号： H01L29/20 , H01L29/22 , H01L29/47 , H01L29/872 , H01L29/88
CPC分类号： H01L29/475 , H01L29/2003 , H01L29/872 , H01L29/88
摘要： New Group III based diodes are disclosed having a low on state voltage (Vf) and structures to keep reverse current (Irev) relatively low. One embodiment of the invention is Schottky barrier diode made from the GaN material system in which the Fermi level (or surface potential) of is not pinned. The barrier potential at the metal-to-semiconductor junction varies depending on the type of metal used and using particular metals lowers the diode's Schottky barrier potential and results in a Vf in the range of 0.1-0.3V. In another embodiment a trench structure is formed on the Schottky diodes semiconductor material to reduce reverse leakage current. and comprises a number of parallel, equally spaced trenches with mesa regions between adjacent trenches. A third embodiment of the invention provides a GaN tunnel diode with a low Vf resulting from the tunneling of electrons through the barrier potential, instead of over it. This embodiment can also have a trench structure to reduce reverse leakage current.
摘要翻译：公开了具有低导通状态电压（V SUB）的新的基于III族的二极管，并且保持反向电流（I SUB）的结构相对较低。本发明的一个实施例是由GaN材料系统制成的肖特基势垒二极管，其中费米能级（或表面电位）不被固定。金属 - 半导体结的势垒电位根据所使用的金属的种类而变化，并且使用特定的金属降低了二极管的肖特基势垒电位，并导致在0.1-0.3V的范围内的V < 。在另一个实施例中，在肖特基二极管半导体材料上形成沟槽结构以减少反向漏电流。并且包括多个平行的等间距的沟槽，其间具有相邻沟槽之间的台面区域。本发明的第三实施例提供了由电子穿过势垒电位而不是在其上的隧穿形成的具有低V bias的GaN隧道二极管。该实施例还可以具有沟槽结构以减少反向漏电流。

60. 发明申请

US20090134041A1 Compact electric appliance providing hydrogen injection for improved performance of internal combustion engines 审中-公开
标题翻译：提供氢气注入的紧凑型电器，以提高内燃机的性能
公开(公告)号：US20090134041A1
公开(公告)日：2009-05-28
申请号：US12288098
申请日：2008-10-15
申请人： Umesh Mishra , Rakesh Lal , Lee McCarthy , Primit Parikh
发明人： Umesh Mishra , Rakesh Lal , Lee McCarthy , Primit Parikh
IPC分类号： C25B1/04
CPC分类号： C25B1/04 , C25B15/02 , F02M25/12 , Y02E60/366 , Y02T10/121
摘要： Devices, systems and methods for improved electrical appliances which allow for efficient and safe production of hydrogen and oxygen gas for internal combustion engines and the like are disclosed. An appliance for providing gas for combustion may comprise a water inlet, a power source, and an electrolyzer with at least one electrolysis transistor generating hydrogen and oxygen. The appliance may also comprise a gas handling unit for collecting the output of the electrolyzer and transporting it to an engine.
摘要翻译：公开了用于改进的电器的装置，系统和方法，其允许有效和安全地生产用于内燃机等的氢气和氧气。用于提供用于燃烧的气体的装置可以包括进水口，电源和具有产生氢气和氧气的至少一个电解晶体管的电解器。设备还可以包括用于收集电解器的输出并将其运送到发动机的气体处理单元。

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