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51. 发明申请

US20060166415A1 Two-transistor tri-state inverter 审中-公开
标题翻译：双晶体三态逆变器
公开(公告)号：US20060166415A1
公开(公告)日：2006-07-27
申请号：US11387626
申请日：2006-03-23
申请人： Themistokles Afentakis , Apostolos Voutsas , Paul Schuele
发明人： Themistokles Afentakis , Apostolos Voutsas , Paul Schuele
IPC分类号： H01L21/84 , H01L21/00
CPC分类号： H01L27/1274 , H01L27/1214 , H01L29/78648 , H01L29/78672
摘要： A two-transistor tri-state inverter is provided, made from a NMOS dual-gate thin-film transistor (DG-TFT) having a top gate, a back gate, and source/drain regions. A PMOS DG-TFT also has a top gate, a back gate, and S/D regions, and the NMOS first S/D region is connected to a PMOS first S/D region. The NMOS top gate is connected to an input signal (Vin), the back gate is connected to a control signal (Vb), the first S/D region supplies an output signal (Vout), and a second S/D region is connected to a reference voltage. The PMOS top gate is connected to the input signal, the back gate is connected to an inverted control signal (−Vb), and a second S/D region is connected to a supply voltage having a higher voltage than the reference voltage.
摘要翻译：提供了由具有顶栅极，后栅极和源极/漏极区域的NMOS双栅极薄膜晶体管（DG-TFT）制成的双晶体管三态反相器。 PMOS DG-TFT还具有顶栅极，背栅极和S / D区域，并且NMOS第一S / D区域连接到PMOS第一S / D区域。 NMOS顶栅连接到输入信号（Vin），背栅极连接到控制信号（Vb），第一S / D区域提供输出信号（Vout），并且第二S / D区域被连接到参考电压。 PMOS顶栅连接到输入信号，后栅连接到反相控制信号（-Vb），第二S / D区连接到具有比参考电压高的电压的电源电压。

52. 发明申请

US20050239238A1 Simultaneous planar and non-planar thin-film transistor processes 失效
标题翻译：同时平面和非平面薄膜晶体管工艺
公开(公告)号：US20050239238A1
公开(公告)日：2005-10-27
申请号：US10985587
申请日：2004-11-09
申请人： Paul Schuele , Apostolos Voutsas
发明人： Paul Schuele , Apostolos Voutsas
IPC分类号： H01L29/10 , H01L29/76 , H01L29/786
CPC分类号： H01L27/12 , H01L29/78624 , H01L29/78642 , H01L29/78648 , H01L29/78675
摘要： A method is provided for concurrently forming MP-TFTs and P-TFTs. Generally, the method comprises: forming a P-TFT having source/drain (S/D) regions, an intervening channel region, and a gate, all in a first horizontal plane; and simultaneously forming a MP-TFT having a first gate in the first horizontal plane and at least one S/D region in a second horizontal plane, overlying the first horizontal plane. The vertical TFT (V-TFT) is an MP-TFT having vertical first gate sidewalls and a vertical channel region overlying a gate sidewall. The dual-gate TFT (DG-TFT) is an MP-TFT having a bottom gate, first and second S/D regions with top surfaces, an intervening channel region with a top surface, and a second, top gate with a bottom surface, all in a second horizontal plane, overlying the first horizontal plane.
摘要翻译：提供了用于同时形成MP-TFT和P-TFT的方法。通常，该方法包括：在第一水平面中形成具有源极/漏极（S / D）区域，中间沟道区域和栅极的P-TFT; 同时在第一水平面上形成具有第一栅极的MP-TFT和位于第一水平面上的第二水平面中的至少一个S / D区域。垂直TFT（V-TFT）是具有垂直的第一栅极侧壁和覆盖栅极侧壁的垂直沟道区的MP-TFT。双栅极TFT（DG-TFT）是具有底栅，具有顶表面的第一和第二S / D区，具有顶表面的中间沟道区和具有底表面的第二顶栅的MP-TFT 都在第二个水平面上，覆盖着第一个水平面。

53. 发明申请

US20050236625A1 Vertical thin film transistor 失效
标题翻译：垂直薄膜晶体管
公开(公告)号：US20050236625A1
公开(公告)日：2005-10-27
申请号：US10831424
申请日：2004-04-23
申请人： Paul Schuele , Apostolos Voutsas
发明人： Paul Schuele , Apostolos Voutsas
IPC分类号： H01L29/10 , H01L29/76 , H01L29/786
CPC分类号： H01L27/12 , H01L29/78624 , H01L29/78642 , H01L29/78648 , H01L29/78675
摘要： A vertical thin-film transistor (V-TFT) is provided along with a method for forming the V-TFT. The method comprises: providing a substrate made from a material such as Si, quartz, glass, or plastic; conformally depositing an insulating layer overlying the substrate; forming a gate, having sidewalls and a thickness, overlying a substrate insulation layer; forming a gate oxide layer overlying the gate sidewalls, and a gate insulation layer overlying the gate top surface; etching the exposed substrate insulation layer; forming a first source/drain region overlying the gate insulation layer; forming a second source/drain region overlying the substrate insulation layer, adjacent a first gate sidewall; and, forming a channel region overlying the first gate sidewall with a channel length about equal to the thickness of the gate, interposed between the first and second source/drain regions.
摘要翻译：提供垂直薄膜晶体管（V-TFT）以及用于形成V-TFT的方法。该方法包括：提供由诸如Si，石英，玻璃或塑料的材料制成的衬底; 保形地沉积覆盖衬底的绝缘层; 形成具有覆盖衬底绝缘层的侧壁和厚度的栅极; 形成覆盖所述栅极侧壁的栅极氧化层，以及覆盖所述栅极顶表面的栅极绝缘层; 蚀刻暴露的基板绝缘层; 形成覆盖所述栅极绝缘层的第一源极/漏极区域; 在第一栅极侧壁附近形成覆盖衬底绝缘层的第二源极/漏极区域; 并且在第一和第二源极/漏极区域之间形成沟槽区域，该沟道区域覆盖具有大约等于栅极厚度的沟道长度的第一栅极侧壁。

54. 发明授权

US06921434B2 Regulated growth method for laser irradiating silicon films 有权
标题翻译：激光照射硅膜的调节生长方法
公开(公告)号：US06921434B2
公开(公告)日：2005-07-26
申请号：US10678575
申请日：2003-10-03
申请人： Apostolos Voutsas
发明人： Apostolos Voutsas
IPC分类号： H01L21/20 , C30B1/02 , H01L21/336 , H01L29/786 , C30B13/02
CPC分类号： C30B1/023 , C30B29/06 , Y10S117/903
摘要： A method is provided for maintaining a planar surface as crystal grains are laterally grown in the fabrication of crystallized silicon films. The method comprises: forming a film of amorphous silicon with a surface and a plurality of areas; irradiating each adjacent areas of the silicon film with a first sequence of laser pulses; and, in response to the first sequence of laser pulses, controlling the planarization of the silicon film surface between adjacent areas of the silicon film as the crystal grains are laterally grown. By controlling the number of laser pulses in the sequence, the temporal separation between pulses, and the relative intensity of the pulses, the lateral growth length characteristics of the crystal grains can be traded against the silicon film flatness. A silicon film formed by a pulsed laser sequence crystallization process is also provided.
摘要翻译：提供了一种保持平面表面的方法，因为晶体在晶体硅膜的制造中横向生长。该方法包括：用表面和多个区域形成非晶硅膜; 用第一序列的激光脉冲照射硅膜的每个相邻区域; 并且响应于激光脉冲的第一序列，随着晶粒横向生长，控制硅膜的相邻区域之间的硅膜表面的平坦化。通过控制序列中的激光脉冲数，脉冲之间的时间间隔和脉冲的相对强度，晶粒的横向生长长度特性可以相对于硅膜平整度进行交易。还提供了通过脉冲激光序列结晶方法形成的硅膜。

55. 发明授权

US06903370B2 Variable quality semiconductor film substrate 有权
标题翻译：可变质量半导体薄膜基板
公开(公告)号：US06903370B2
公开(公告)日：2005-06-07
申请号：US10705279
申请日：2003-11-10
申请人： Apostolos Voutsas , Yasuhiro Mitiani , Mark A. Crowder
发明人： Apostolos Voutsas , Yasuhiro Mitiani , Mark A. Crowder
IPC分类号： G02F1/1368 , H01L21/20 , H01L21/336 , H01L21/77 , H01L21/84 , H01L27/12 , H01L29/04 , H01L29/786 , H01L31/20
CPC分类号： H01L27/1285 , H01L27/1296 , H01L29/04 , H01L29/6675 , H01L29/78672
摘要： A substrate and a method for fabricating variable quality substrate materials are provided. The method comprises: selecting a first mask having a first mask pattern; projecting a laser beam through the first mask to anneal a first area of semiconductor substrate; creating a first condition in the first area of the semiconductor film; selecting a second mask having a second mask pattern; projecting the laser beam through the second mask to anneal a second area of the semiconductor film; and, creating a second condition in the second area of the semiconductor film, different than the first condition. More specifically, when the substrate material is silicon, the first and second conditions concern the creation of crystalline material with a quantitative measure of lattice mismatch between adjacent crystal domains. For example, the lattice mismatch between adjacent crystal domains can be measured as a number of high-angle grain boundaries per area.
摘要翻译：提供了一种制造可变质量基板材料的基板和方法。该方法包括：选择具有第一掩模图案的第一掩模; 将激光束投射穿过所述第一掩模以退火半导体衬底的第一区域; 在半导体膜的第一区域中形成第一条件; 选择具有第二掩模图案的第二掩模; 将激光束投影通过第二掩模，以退火半导体膜的第二区域; 并且在半导体膜的第二区域中产生与第一条件不同的第二条件。更具体地，当衬底材料是硅时，第一和第二条件涉及通过定量测量相邻晶体畴之间的晶格失配来产生结晶材料。例如，相邻晶体畴之间的晶格失配可以被测量为每个面积的高角度晶界数。

56. 发明申请

US20050103255A1 Process for long crystal lateral growth in silicon films by UV and IR pulse sequencing 有权
标题翻译：通过UV和IR脉冲测序在硅膜中长晶体横向生长的工艺
公开(公告)号：US20050103255A1
公开(公告)日：2005-05-19
申请号：US10713383
申请日：2003-11-13
申请人： Apostolos Voutsas , Robert Sposili , Mark Crowder
发明人： Apostolos Voutsas , Robert Sposili , Mark Crowder
IPC分类号： C30B1/00 , C30B13/00 , C30B13/24 , C30B29/06 , H01L21/20 , H01L21/77 , H01L21/84
CPC分类号： H01L21/02686 , C30B13/00 , C30B13/24 , C30B29/06 , H01L21/02532 , H01L21/2022 , H01L21/2026 , H01L27/1285
摘要： A process of lateral crystallization is provided for increasing the lateral growth length (LGL). A localized region of the substrate is heated for a short period of time. While the localized region of the substrate is still heated, a silicon film overlying the substrate is irradiated to anneal the silicon film to crystallize a portion of the silicon film in thermal contact with the heated substrate region. A CO2 laser may be used as a heat source to heat the substrate, while a UV laser or a visible spectrum laser is used to irradiate and crystallize the film.
摘要翻译：提供横向结晶的方法用于增加横向生长长度（LGL）。将衬底的局部区域加热一段短时间。当衬底的局部区域仍被加热时，照射覆盖在衬底上的硅膜来退火硅膜，以使与加热的衬底区域热接触的一部分硅膜结晶。可以使用CO 2激光器作为加热衬底的热源，而使用UV激光或可见光谱激光来照射和结晶膜。

57. 发明授权

US06818484B2 Method of forming predominantly <100> polycrystalline silicon thin film transistors 失效
标题翻译：主要形成<100>多晶硅薄膜晶体管的方法
公开(公告)号：US06818484B2
公开(公告)日：2004-11-16
申请号：US10280990
申请日：2002-10-24
申请人： Apostolos Voutsas
发明人： Apostolos Voutsas
IPC分类号： H01L2100
CPC分类号： H01L29/66757 , H01L29/78675
摘要： A method is provided to produce thin film transistors (TFTs) on polycrystalline films having a single predominant crystal orientation. A layer of amorphous silicon is deposited over a substrate to a thickness suitable for producing a desired crystal orientation. Lateral-seeded excimer laser annealing (LS-ELA) is used to crystallize the amorphous silicon to form a film with a preferred crystal orientation. A gate is formed overlying the polycrystalline film. The polycrystalline film is doped to produce source and drain regions.
摘要翻译：提供了一种在具有单个主要晶体取向的多晶膜上制造薄膜晶体管（TFT）的方法。将非晶硅层沉积在衬底上至适于产生所需晶体取向的厚度。使用横向晶种准分子激光退火（LS-ELA）使非晶硅结晶以形成具有优选晶体取向的膜。形成覆盖多晶膜的栅极。多晶膜被掺杂以产生源区和漏区。

58. 发明授权

US06645454B2 System and method for regulating lateral growth in laser irradiated silicon films 有权
标题翻译：用于调节激光照射硅膜横向生长的系统和方法
公开(公告)号：US06645454B2
公开(公告)日：2003-11-11
申请号：US09894940
申请日：2001-06-28
申请人： Apostolos Voutsas
发明人： Apostolos Voutsas
IPC分类号： C30B2906
CPC分类号： C30B1/023 , C30B29/06 , Y10S117/903
摘要： A method is provided for maintaining a planar surface as crystal grains are laterally grown in the fabrication of crystallized silicon films. The method comprises: forming a film of amorphous silicon with a surface and a plurality of areas; irradiating each adjacent areas of the silicon film with a first sequence of laser pulses; and, in response to the first sequence of laser pulses, controlling the planarization of the silicon film surface between adjacent areas of the silicon film as the crystal grains are laterally grown. By controlling the number of laser pulses in the sequence, the temporal separation between pulses, and the relative intensity of the pulses, the lateral growth length characteristics of the crystal grains can be traded against the silicon film flatness. A silicon film formed by a pulsed laser sequence crystallization process is also provided.
摘要翻译：提供了一种保持平面表面的方法，因为晶体在晶体硅膜的制造中横向生长。该方法包括：用表面和多个区域形成非晶硅膜; 用第一序列的激光脉冲照射硅膜的每个相邻区域; 并且响应于激光脉冲的第一序列，随着晶粒横向生长，控制硅膜的相邻区域之间的硅膜表面的平坦化。通过控制序列中的激光脉冲数，脉冲之间的时间间隔和脉冲的相对强度，晶粒的横向生长长度特性可以相对于硅膜平整度进行交易。还提供了通过脉冲激光序列结晶方法形成的硅膜。

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