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51. 发明授权

US3971887A Dynamic magnetic bubble display system 失效
标题翻译：动态磁性气泡显示系统
公开(公告)号：US3971887A
公开(公告)日：1976-07-27
申请号：US575908
申请日：1975-05-09
申请人： Burn Jeng Lin , Yeong Show Lin
发明人： Burn Jeng Lin , Yeong Show Lin
IPC分类号： G11C11/14 , G02F1/09 , G03H1/04 , G09F9/30 , G09G3/00 , G09G3/02 , G09G3/34 , G11C13/04 , G11C13/06 , H04N5/66
CPC分类号： G09G3/34 , G02F1/09 , G11C13/043
摘要： A dynamic pattern display and optical data processing system is provided including magnetic bubble devices which may be operated in real-time to produce a multi-tone (gray scale) two dimensional pattern. The display pattern is obtained by directing a light beam, which in certain applications may be linearly polarized, through a plurality of two-dimensional magnetic bubble arrays combined in a stack arrangement. Each magnetic bubble array constitutes a layer which differs in thickness from the other magnetic bubble layers. Each magnetic bubble array is also electronically driven by its own bubble propagating circuit which produces, in most embodiments, a different "local transmissivity" which is determined by whether a bubble or an empty space is propagated to the location. The degree of transmitted intensity is an exponential function of the number of magnetic bubble layers, thus n layers provides 2.sup.n steps of transmitted intensity and a four layer structure provides a sixteen tone gray scale display. The electronic portion of the structure may be driven by signals representing mathematical expressions, patterns, manual inputs and the like to generate holograms, holographic complex filters, three-dimensional television pictures, spatial intensity filters, or ordinary two-dimensional multi-tone television pictures.
摘要翻译：提供动态图案显示和光学数据处理系统，其包括可以实时操作以产生多色调（灰度）二维图案的磁性气泡装置。显示图案是通过在堆叠布置中组合的多个二维磁性气泡阵列来引导在某些应用中可以是线偏振的光束而获得的。每个磁气泡阵列构成厚度与其它磁性气泡层不同的层。每个磁性气泡阵列也由其自身的气泡传播电路进行电子驱动，在大多数实施例中，其产生不同的“局部透射率”，其由气泡或空白空间传播到该位置来确定。透射强度的程度是磁泡层数量的指数函数，因此n层提供了传输强度的2n个步长，而四层结构提供了十六色灰度显示。结构的电子部分可以由表示数学表达式，图案，手动输入等的信号驱动，以产生全息图，全息复合滤波器，三维电视图像，空间强度滤波器或普通的二维多色调电视图像。

52. 发明授权

US08848163B2 Photoresist materials and photolithography processes 有权
标题翻译：光刻胶材料和光刻工艺
公开(公告)号：US08848163B2
公开(公告)日：2014-09-30
申请号：US13050251
申请日：2011-03-17
申请人： Hsien-Cheng Wang , Chin-Hsiang Lin , Heng-Jen Lee , Ching-Yu Chang , Hua-Tai Lin , Burn Jeng Lin
发明人： Hsien-Cheng Wang , Chin-Hsiang Lin , Heng-Jen Lee , Ching-Yu Chang , Hua-Tai Lin , Burn Jeng Lin
IPC分类号： G03B27/52 , G03B27/42
CPC分类号： G03F7/0397 , G03F7/0045 , G03F7/0392 , G03F7/30 , G03F7/38 , G03F7/70858 , Y10S430/106 , Y10S430/111
摘要： A lithography apparatus generates a tunable magnetic field to facilitate processing of photoresist. The lithography apparatus includes a chamber and a substrate stage in the chamber operable to hold a substrate. A magnetic module provides a magnetic field to the substrate on the substrate stage. The magnetic module is configured to provide the magnetic field in a tunable and alternating configuration with respect to its magnitude and frequency. The magnetic field is provided to have a gradient in magnitude along a Z-axis that is perpendicular to the substrate stage to cause magnetically-charged particles disposed over the substrate stage to move up and down along the Z-axis. The lithography apparatus also includes a radiation energy source and an objective lens configured to receive radiation energy from the radiation energy source and direct the radiation energy toward the substrate positioned on the substrate stage.
摘要翻译：光刻设备产生可调磁场以便于光致抗蚀剂的加工。光刻设备包括腔室和腔室中的衬底台，其可操作以保持衬底。磁性模块为衬底台上的衬底提供磁场。磁模块被配置为相对于其幅度和频率提供可调和交替配置的磁场。磁场被提供为具有沿垂直于衬底台的Z轴的幅度梯度，以使得设置在衬底台上的带磁性颗粒沿Z轴上下移动。光刻设备还包括辐射能量源和物镜，其被配置为从辐射能量源接收辐射能量并将辐射能量引向位于衬底台上的衬底。

53. 发明授权

US08767178B2 Immersion lithography system using direction-controlling fluid inlets 有权
标题翻译：浸入光刻系统采用方向控制流体入口
公开(公告)号：US08767178B2
公开(公告)日：2014-07-01
申请号：US13482879
申请日：2012-05-29
申请人： Burn Jeng Lin , Ching-Yu Chang
发明人： Burn Jeng Lin , Ching-Yu Chang
IPC分类号： G03B27/42
CPC分类号： G03B27/52 , G03F7/70341
摘要： Immersion lithography system and method using direction-controlling fluid inlets are described. According to one embodiment of the present disclosure, an immersion lithography apparatus includes a lens assembly having an imaging lens disposed therein and a wafer stage configured to retain a wafer beneath the lens assembly. The apparatus also includes a plurality of direction-controlling fluid inlets disposed adjacent to the lens assembly, each direction-controlling fluid inlet in the plurality of direction-controlling fluid inlets being configured to direct a flow of fluid beneath the lens assembly and being independently controllable with respect to the other fluid inlets in the plurality of direction-controlling fluid inlets.
摘要翻译：描述了使用方向控制流体入口的浸渍光刻系统和方法。根据本公开的一个实施例，浸没式光刻设备包括具有设置在其中的成像透镜的透镜组件和被配置为将晶片保持在透镜组件下方的晶片台。该装置还包括多个方向控制流体入口，其邻近透镜组件设置，多个方向控制流体入口中的每个方向控制流体入口构造成将透镜流体下方的流体引导到透镜组件的下方并且可独立控制相对于多个方向控制流体入口中的其它流体入口。

54. 发明申请

US20130320243A1 EFFICIENT SCAN FOR E-BEAM LITHOGRAPHY 有权
标题翻译： E-BEAM LITHOGRAPHY的高效扫描
公开(公告)号：US20130320243A1
公开(公告)日：2013-12-05
申请号：US13484524
申请日：2012-05-31
申请人： Cheng-Hung Chen , Shih-Chi Wang , Jeng-Horng Chen , Burn Jeng Lin
发明人： Cheng-Hung Chen , Shih-Chi Wang , Jeng-Horng Chen , Burn Jeng Lin
IPC分类号： G21K5/10
CPC分类号： H01J37/3174 , B82Y10/00 , B82Y40/00 , H01J2237/31761
摘要： The present disclosure provides a method of increasing the wafer throughput by an electron beam lithography system. The method includes scanning a wafer using the maximum scan slit width (MSSW) of the electron beam writer. By constraining the integrated circuit (IC) field size to allow the MSSW to cover a complete field, the MSSW is applied to decrease the scan lanes of a wafer and thereby increase the throughput. When scanning the wafer with the MSSW, the next scan lane data can be rearranged and loaded into a memory buffer. Thus, once one scan lane is finished, the next scan lane data in the memory buffer is read for scanning.
摘要翻译：本公开提供了一种通过电子束光刻系统增加晶片通过量的方法。该方法包括使用电子束写入器的最大扫描狭缝宽度（MSSW）扫描晶片。通过限制集成电路（IC）场尺寸以允许MSSW覆盖整个场，MSSW被应用于减小晶片的扫描通道，从而增加吞吐量。当用MSSW扫描晶片时，下一个扫描通道数据可以重新排列并加载到存储器缓冲器中。因此，一旦一个扫描通道完成，读取存储器缓冲器中的下一个扫描通道数据进行扫描。

55. 发明授权

US08381139B2 Method for metal correlated via split for double patterning 有权
标题翻译：用于双重图案化的金属相互分离的方法
公开(公告)号：US08381139B2
公开(公告)日：2013-02-19
申请号：US13006608
申请日：2011-01-14
申请人： Burn Jeng Lin , Tsai-Sheng Gau , Ru-Gun Liu , Wen-Chun Huang
发明人： Burn Jeng Lin , Tsai-Sheng Gau , Ru-Gun Liu , Wen-Chun Huang
IPC分类号： G06F17/50
CPC分类号： H01L22/10 , G03F1/70 , G03F7/70433 , G03F7/70466 , G06F17/5036 , G06F17/5072 , G06F17/5081 , H01L21/31144 , H01L23/5226 , H01L2924/0002 , H01L2924/00
摘要： The embodiments of via mask splitting methods for double patterning technology described enable via patterning to align to a metal layer underneath or overlying to reduce overlay error and to increase via landing. If adjacent vias violate the G0-mask-split-rule for space or pitch (or both) between vias, the mask assignment of end vias are given higher priority to ensure good landing of end vias, since they are at higher risk of mislanding. The metal correlated via mask splitting methods enable better via performance, such as lower via resistance, and higher via yield.
摘要翻译：所描述的用于双重图案化技术的通孔掩模分裂方法的实施例使得能够经由图案化以对准下面的金属层或覆盖以减少覆盖误差并增加通过着陆。如果相邻的通孔违反了通孔之间的空间或间距（或两者）的G0-掩模分割规则，则优先考虑末端通孔的掩模分配，以确保最终通孔的良好着陆，因为它们具有较高的误放置风险。通过掩模分离方法相关的金属能够实现更好的通过性能，例如较低的通孔电阻和较高的通孔产量。

56. 发明授权

US08208116B2 Immersion lithography system using a sealed wafer bath 有权
标题翻译：浸没光刻系统使用密封晶圆槽
公开(公告)号：US08208116B2
公开(公告)日：2012-06-26
申请号：US11670860
申请日：2007-02-02
申请人： Burn Jeng Lin , Ching-Yu Chang
发明人： Burn Jeng Lin , Ching-Yu Chang
IPC分类号： G03B27/52
CPC分类号： G03B27/52 , G03F7/70341
摘要： Immersion lithography system and method using a sealed wafer bottom are described. One embodiment is an immersion lithography apparatus including a lens assembly comprising an imaging lens and a wafer stage for retaining a wafer beneath the lens assembly and comprising a seal ring for sealing a gap between a bottom edge of a wafer retained on the wafer stage and the wafer stage. The apparatus further includes a fluid tank for retaining immersion fluid, the fluid tank situated with respect to the wafer stage for enabling full immersion of the wafer retained on the wafer stage in the immersion fluid; a cover disposed over at least a portion of the fluid tank for providing a temperature-controlled, fluid-rich environment within the fluid tank; and at least one directional flow control fluid inlet surrounding the imaging lens for directing immersion fluid toward an edge of the wafer retained on the wafer stage closest to the imaging lens.
摘要翻译：描述了浸没光刻系统和使用密封晶片底部的方法。一个实施例是一种浸没光刻设备，其包括透镜组件，该透镜组件包括成像透镜和用于将晶片保持在透镜组件下方的晶片台，并且包括密封环，用于密封保留在晶片台上的晶片的底部边缘与晶圆台。该装置还包括用于保持浸没流体的流体箱，相对于晶片台定位的流体箱，用于使保留在晶片台上的晶片能够完全浸入浸没流体中; 设置在所述流体箱的至少一部分上的盖，用于在所述流体箱内提供温度控制的，富含流体的环境; 以及围绕成像透镜的至少一个方向流量控制流体入口，用于将浸没流体引向保持在最靠近成像透镜的晶片台上的晶片的边缘。

57. 发明申请

US20110261334A1 Apparatus for Method for Immersion Lithography 有权
标题翻译：浸没光刻方法的设备
公开(公告)号：US20110261334A1
公开(公告)日：2011-10-27
申请号：US13176587
申请日：2011-07-05
申请人： Burn Jeng Lin
发明人： Burn Jeng Lin
IPC分类号： G03B27/52
CPC分类号： G02B7/028 , G02B7/04 , G03F7/70341
摘要： An apparatus for immersion lithography that includes an imaging lens which has a front surface, a fluid-containing wafer stage for supporting a wafer that has a top surface to be exposed positioned spaced-apart and juxtaposed to the front surface of the imaging lens, and a fluid that has a refractive index between about 1.0 and about 2.0 filling a gap formed in-between the front surface of the imaging lens and the top surface of the wafer. A method for immersion lithography can be carried out by flowing a fluid through a gap formed in-between the front surface of an imaging lens and a top surface of a wafer. The flow rate and temperature of the fluid can be controlled while particulate contaminants are filtered out by a filtering device.
摘要翻译：一种用于浸没式光刻的装置，其包括具有前表面的成像透镜，用于支撑晶片的含流体的晶片台，所述晶片载台具有被间隔开并与所述成像透镜的前表面并置的待暴露的顶表面;以及具有约1.0至约2.0的折射率的流体填充在成像透镜的前表面和晶片的顶表面之间形成的间隙。可以通过使流体流过形成在成像透镜的前表面和晶片的顶表面之间的间隙来进行浸没式光刻的方法。可以控制流体的流速和温度，同时通过过滤装置将颗粒污染物过滤掉。

58. 发明申请

US20110164234A1 NOVEL PHOTORESIST MATERIALS AND PHOTOLITHOGRAPHY PROCESSES 有权
标题翻译：新型光电材料和光刻方法
公开(公告)号：US20110164234A1
公开(公告)日：2011-07-07
申请号：US13050251
申请日：2011-03-17
申请人： Hsien-Cheng Wang , Chin-Hsiang Lin , H.J. Lee , Ching-Yu Chang , Hua-Tai Lin , Burn Jeng Lin
发明人： Hsien-Cheng Wang , Chin-Hsiang Lin , H.J. Lee , Ching-Yu Chang , Hua-Tai Lin , Burn Jeng Lin
IPC分类号： G03B27/58 , G03B27/54
CPC分类号： G03F7/0397 , G03F7/0045 , G03F7/0392 , G03F7/30 , G03F7/38 , G03F7/70858 , Y10S430/106 , Y10S430/111
摘要： A material for use in lithography processing includes a polymer that turns soluble to a base solution in response to reaction with acid and a plurality of magnetically amplified generators (MAGs) each having a magnetic element and each decomposing to form acid bonded with the magnetic element in response to radiation energy.
摘要翻译：用于光刻处理的材料包括响应于与酸的反应而变成可溶于碱溶液的聚合物和多个具有磁性元素的磁放大发生器（MAG），并分别与磁性元件形成酸结合响应辐射能量。

59. 发明申请

US20090309253A1 METHOD AND APPARATUS FOR PLANARIZING A POLYMER LAYER 有权
标题翻译：用于平面聚合物层的方法和装置
公开(公告)号：US20090309253A1
公开(公告)日：2009-12-17
申请号：US12137259
申请日：2008-06-11
申请人： Burn Jeng Lin
发明人： Burn Jeng Lin
IPC分类号： B28B11/08 , B28B1/00
CPC分类号： H01L21/67092 , H01L21/31051 , H01L21/31058
摘要： A method for planarizing a polymer layer is provided which includes providing a substrate having the polymer layer formed thereon, providing a structure having a substantially flat surface, pressing the flat surface of the structure to a top surface of the polymer layer such that the top surface of the polymer layer substantially conforms to the flat surface of the structure, and separating the flat surface of the structure from the top surface of the polymer material layer.
摘要翻译：提供了一种用于平面化聚合物层的方法，其包括提供其上形成有聚合物层的基底，提供具有基本平坦表面的结构，将该结构的平坦表面压在聚合物层的顶表面上，使得顶表面的聚合物层基本上符合结构的平坦表面，并且将结构的平坦表面与聚合物材料层的顶表面分离。

60. 发明授权

US07501226B2 Immersion lithography system with wafer sealing mechanisms 有权
标题翻译：具有晶片密封机构的浸没光刻系统
公开(公告)号：US07501226B2
公开(公告)日：2009-03-10
申请号：US10874982
申请日：2004-06-23
申请人： Burn Jeng Lin , Tsai-Sheng Gau , Chun-Kung Chen , Ru-Gun Liu , Shing Shen Yu , Jen Chieh Shih
发明人： Burn Jeng Lin , Tsai-Sheng Gau , Chun-Kung Chen , Ru-Gun Liu , Shing Shen Yu , Jen Chieh Shih
IPC分类号： G03B27/52
CPC分类号： G03F7/70808 , G03F7/70341
摘要： An immersion lithography system is disclosed to comprise a fluid containing feature for providing an immersion fluid for performing immersion lithography on a wafer, and a seal ring covering a predetermined portion of a wafer edge for preventing the immersion fluid from leaking through the covered portion of the wafer edge while the fluid is used for the immersion lithography.
摘要翻译：公开了一种浸没式光刻系统，其包括用于提供用于在晶片上进行浸没式光刻的浸没流体的流体容纳特征，以及覆盖晶片边缘的预定部分的密封环，用于防止浸没流体泄漏通过晶片边缘，同时流体用于浸没光刻。

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