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51. 发明专利

JP2009200142A Film forming device and film forming method 审中-公开
标题翻译：薄膜成型装置和薄膜成型方法
公开(公告)号：JP2009200142A
公开(公告)日：2009-09-03
申请号：JP2008038462
申请日：2008-02-20
申请人： Nuflare Technology Inc , 株式会社ニューフレアテクノロジー
发明人： SUZUKI KUNIHIKO
IPC分类号： H01L21/677 , C23C16/44 , H01L21/205
摘要： PROBLEM TO BE SOLVED: To provide a film forming device and an efficient film forming method capable of efficiently conducting the film forming process.
SOLUTION: The film forming device 1 provides a film forming process to a substrate mounted in a film forming chamber 2. A substrate standby part 4 is connected to the film forming chamber 2 through a first opening and closing part 3, and includes a robot 17 for transferring the substrate-susceptor for automatically transferring the susceptor with a plurality of substrates mounted between the substrate standby part 4 and the film forming chamber 2. A cleaning part 5 for cleaning the susceptor after film forming is provided in the outside of the film forming chamber 2.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：解决的问题：提供能够有效地进行成膜处理的成膜装置和有效的成膜方法。解决方案：成膜装置1为安装在成膜室2中的基板提供成膜工艺。基板待机部分4通过第一开闭部分3连接到成膜室2，并且包括用于传送用于自动转印基座的基板基座的机器人17与安装在基板备用部分4和成膜室2之间的多个基板。用于在成膜之后清洁基座的清洁部分5设置在成膜室2.版权所有（C）2009，JPO＆INPIT

52. 发明专利

JP2009071017A Apparatus and method for vapor phase deposition 审中-公开
标题翻译：用于蒸气相沉积的装置和方法
公开(公告)号：JP2009071017A
公开(公告)日：2009-04-02
申请号：JP2007237542
申请日：2007-09-13
申请人： Nuflare Technology Inc , 株式会社ニューフレアテクノロジー
发明人： MORIYAMA YOSHIKAZU , NAKAZAWA SEIICHI , SUZUKI KUNIHIKO , YAJIMA MASAMI
IPC分类号： H01L21/205 , C23C16/455
摘要： PROBLEM TO BE SOLVED: To provide an apparatus and a method for vapor phase deposition that improve the uniformity in film thickness and impurity concentration over the whole surface of a vapor phase deposited film formed on a wafer.
SOLUTION: The apparatus for vapor phase deposition has a chamber 101, a gas feed section 103, a gas distribution plate 102 that segments the inside of the chamber 101 into a buffer region 130 and a reaction region 140 and distributes process gas with a formed through-hole 120, a gas shielding plate 104 that is provided at a given clearance between the gas distribution plate 102 at the buffer region 130 to control a flow rate of the process gas passing through the gas distribution plate 102, a holder 106 that is provided at the reaction region 140 to hold a wafer 105, and a gas exhaust section 110 for exhausting the process gas out of the chamber 101. Such an arrangement can adjust a flow rate of the process gas to be supplied to the whole surface on which a vapor phase deposited film of the wafer 105 is formed, improving the uniformity in film thickness and impurity concentration over the whole surface of the wafer 105.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供一种气相沉积的装置和方法，其提高在晶片上形成的气相沉积膜的整个表面上的膜厚度和杂质浓度的均匀性。气相沉积装置具有室101，气体供给部分103，气体分配板102，其将室101的内部分隔成缓冲区域130和反应区域140，并将工艺气体与形成的通孔120，气体屏蔽板104，其设置在缓冲区域130处的气体分配板102之间的给定间隙处，以控制通过气体分配板102的处理气体的流量;保持器106 设置在反应区域140以保持晶片105，以及用于将处理气体排出室101的排气部分110.这种布置可以调节供给到整个表面的处理气体的流量在其上形成晶片105的气相沉积膜，改善晶片105整个表面上的膜厚度和杂质浓度的均匀性。（C）2009年，JPO和INPIT

53. 发明专利

JP2007234775A Semiconductor manufacturing equipment 审中-公开
标题翻译：半导体制造设备
公开(公告)号：JP2007234775A
公开(公告)日：2007-09-13
申请号：JP2006053121
申请日：2006-02-28
申请人： Nuflare Technology Inc , 株式会社ニューフレアテクノロジー
发明人： MORIYAMA YOSHIKAZU , NAKAZAWA SEIICHI , SUZUKI KUNIHIKO , ARAI HIDEKI , INADA SATOSHI , MITANI SHINICHI
IPC分类号： H01L21/205 , C23C16/46
摘要： PROBLEM TO BE SOLVED: To provide semiconductor manufacturing equipment capable of heating a wafer uniformly to a region near the edge. SOLUTION: The semiconductor manufacturing equipment is equipped with a reaction chamber 2 wherein a wafer 1 to be processed is to be introduced, gas supply means 3 for supplying a reaction gas into the reaction chamber 2, gas exhaust means 4 for exhausting the reaction gas out of the reaction chamber 1, holder 6 for holding the wafer 1 to be processed by the peripheral portion, rotary drive means 5 for turning the wafer 1 to be processed via the holder 6, heater 7 for heating the wafer 1 to be processed from below, and induction coil 8 for heating the holder 6 by high-frequency induction heating. COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：提供能够将晶片均匀地加热到边缘附近的半导体制造设备。解决方案：半导体制造设备配备有反应室2，其中待引入的晶片1被引入，用于将反应气体供应到反应室2中的气体供给装置3，用于排出从反应室1出来的反应气体，用于保持由周边部分加工的晶片1的保持器6，用于通过保持器6转动待加工晶片1的旋转驱动装置5，用于加热晶片1的加热器7 以及用于通过高频感应加热来加热保持器6的感应线圈8。版权所有（C）2007，JPO＆INPIT

54. 发明专利

JP2013065792A Heater and deposition apparatus 审中-公开
标题翻译：加热器和沉积装置
公开(公告)号：JP2013065792A
公开(公告)日：2013-04-11
申请号：JP2011204765
申请日：2011-09-20
申请人： Nuflare Technology Inc , 株式会社ニューフレアテクノロジー
发明人： IKETANI NAOHISA , SUZUKI KUNIHIKO , SATO HIROSUKE
IPC分类号： H01L21/205 , C23C16/46
CPC分类号： C23C16/46 , C30B25/10 , C30B35/00 , F27B17/0025 , F27D2099/0065 , H01L21/67103
摘要： PROBLEM TO BE SOLVED: To provide a heater having a planar heating element shaped so as to ensure the strength, and to provide a deposition apparatus using the same.SOLUTION: A heating element 1 of a heater includes a ribbon-shaped heating element member 2 having a U-shaped profile as a basic structure, and has a shape capable of ensuring the strength. In the heating element 1, heating element members 2 each having a structure bent in the longitudinal direction are arranged annularly or in disc-shape thus constituting a planar heating element. A heater having the heating element 1 is applied to a deposition apparatus, and disposed below a wafer so that the upper surface S of the heating element 1 faces the rear surface of the wafer. In the heating element 1, occurrence of deflection is reduced and thereby occurrence of deformation can be minimized. In the deposition apparatus, heating of a wafer under desired conditions is achieved by means of a heater having the heating element 1, and the wafer can be heated uniformly from the rear surface.
摘要翻译：要解决的问题：提供具有形状以确保强度的平面加热元件的加热器，并提供使用该加热元件的沉积设备。解决方案：加热器的加热元件1包括具有U形轮廓作为基本结构的带状加热元件2，并且具有能够确保强度的形状。在加热元件1中，具有沿长度方向弯曲的结构的加热元件2被环形地设置成盘状，从而构成平面加热元件。将具有加热元件1的加热器施加到沉积设备，并且设置在晶片的下方，使得加热元件1的上表面S面向晶片的后表面。在加热元件1中，偏转的发生减少，从而可以使变形的发生最小化。在沉积装置中，通过具有加热元件1的加热器实现期望条件下的晶片的加热，并且可以从后表面均匀地加热晶片。版权所有（C）2013，JPO＆INPIT

55. 发明专利

JP2013038225A Deposition apparatus and deposition method 有权
标题翻译：沉积装置和沉积方法
公开(公告)号：JP2013038225A
公开(公告)日：2013-02-21
申请号：JP2011173086
申请日：2011-08-08
申请人： Nuflare Technology Inc , 株式会社ニューフレアテクノロジー
发明人： SUZUKI KUNIHIKO , MITANI SHINICHI , SATO HIROSUKE
IPC分类号： H01L21/205 , C23C16/44 , C23C16/455
CPC分类号： C30B29/06 , C23C16/4411 , C23C16/45565 , C23C16/45589 , C30B25/12
摘要： PROBLEM TO BE SOLVED: To provide a deposition apparatus and a deposition method which reduce spaces where a reaction gas accumulates.SOLUTION: A deposition apparatus 100 comprises: a chamber 1 where a reaction gas 4 is supplied and a deposition process is performed; a hollow cylindrical liner 2 provided in the chamber 1; and a shower plate 15 provided above the liner 2 and through which the reaction gas penetrates. The show plate 15 moves upward from a position that closes an upper opening 52 of the liner 2, thereby allowing the exterior of the chamber 1 to communicate with the interior of the liner 2 through a substrate transfer port 47 provided on a wall of the chamber 1. Further, the deposition apparatus 100 has a substrate support part 50 provided in the liner 2 and supporting and moving the substrate 7 to be subject to the deposition process in the vertical direction; and a robot hand 48 getting into/out from the reaction chamber through the substrate transfer port 47. The substrate 7 is delivered between the substrate support part 50 and the robot hand 48.
摘要翻译：解决的问题：提供减少反应气体积聚的空间的沉积装置和沉积方法。解决方案：沉积设备100包括：室1，其中供应反应气体4并进行沉积过程; 设置在室1中的中空圆柱形衬垫2; 以及设置在衬套2上方并且反应气体穿过的淋浴板15。展示板15从封闭衬垫2的上开口52的位置向上移动，从而允许室1的外部通过设置在室的壁上的基板传送口47与衬垫2的内部连通此外，沉积设备100具有设置在衬垫2中的衬底支撑部分50，并且在垂直方向上支撑和移动衬底7以进行沉积处理; 并且机器人手48通过基板传送端口47进入/离开反应室。基板7在基板支撑部分50和机器人手48之间传送。（C）2013，JPO和INPIT

56. 发明专利

JP2013016562A Vapor-phase growth method 审中-公开
标题翻译：蒸汽相生长法
公开(公告)号：JP2013016562A
公开(公告)日：2013-01-24
申请号：JP2011146802
申请日：2011-06-30
申请人： Nuflare Technology Inc , 株式会社ニューフレアテクノロジー
发明人： SUZUKI KUNIHIKO , SATO HIROSUKE , MITANI SHINICHI
IPC分类号： H01L21/205 , C23C16/458
摘要： PROBLEM TO BE SOLVED: To provide a vapor-phase growth method that reduces the adhesion of a film to a susceptor supporting a semiconductor substrate due to a material gas and reduces the time of etching processing of the susceptor in forming an epitaxial film.SOLUTION: At least a part of a susceptor 102 supporting a silicon wafer 101 that is a semiconductor substrate is coated with a metal oxide film such as SiOand SiNor a nitride film. Then, while the silicon wafer 101 is heated on the susceptor 102, a material gas is supplied onto the silicon wafer 101, and an epitaxial film is grown on the silicon wafer 101 with the adhesion of a film due to the material gas on the susceptor 102 being suppressed.
摘要翻译：要解决的问题：提供一种气相生长方法，其减少了由于材料气体而导致的膜与支撑半导体衬底的基座的粘附性，并且减小了形成外延膜的基座的蚀刻处理时间。解决方案：支撑作为半导体衬底的硅晶片101的基座102的至少一部分涂覆有金属氧化物膜，例如SiO 2 和Si 3 N 4 或氮化物膜。然后，当在基座102上加热硅晶片101时，将材料气体供应到硅晶片101上，并且在硅晶片101上生长由于基座上的材料气体而附着的膜的外延膜 102被压制。版权所有（C）2013，JPO＆INPIT

57. 发明专利

JP2012212882A Semiconductor manufacturing apparatus, and semiconductor manufacturing method 审中-公开
标题翻译：半导体制造设备和半导体制造方法
公开(公告)号：JP2012212882A
公开(公告)日：2012-11-01
申请号：JP2012069104
申请日：2012-03-26
申请人： Nuflare Technology Inc , 株式会社ニューフレアテクノロジー
发明人： SUZUKI KUNIHIKO , MITANI SHINICHI
IPC分类号： H01L21/205 , C23C16/44 , C23C16/455
CPC分类号： H01L21/67017 , C23C16/24 , C23C16/45523 , C23C16/45561 , H01L21/6719
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor manufacturing apparatus, and a semiconductor manufacturing method which increase productivity of and keep high quality of an epitaxial film, and enhance utilization efficiency of material gas in a semiconductor manufacturing process.SOLUTION: A semiconductor manufacturing apparatus of the present invention comprises: a plurality of reaction chambers to which wafers are introduced and in which film formation processing is performed; a material gas supply mechanism which has a plurality of material gas supply lines for supplying material gas into the plurality of reaction chambers, and a flow-rate-control mechanism for controlling flow rates of the material gas in the material gas supply lines; a carrier gas supply mechanism which has a plurality of carrier gas supply lines for supplying carrier gas into the plurality of reaction chambers; and a material gas switching mechanism which intermittently opens and closes the material gas supply lines so that at least one of the material gas supply lines is in an open state at the same time, thereby switching, in turn, the reaction chambers for supplying the material gas.
摘要翻译：要解决的问题：提供一种提高外延膜的生产率和保持高质量的半导体制造装置和半导体制造方法，并且在半导体制造工艺中提高材料气体的利用效率。解决方案：本发明的半导体制造装置包括：引入晶片的多个反应室，其中进行成膜处理; 一种材料气体供给机构，其具有用于将材料气体供给到多个反应室中的多个原料气体供给管线和用于控制原料气体供给管线中的原料气体的流量的流量控制机构; 载气供给机构，其具有用于将载气供给到所述多个反应室中的多个载气供给管线; 以及材料气体切换机构，其间歇地打开和关闭所述原料气体供给管线，使得所述原料气体供给管线中的至少一个同时处于打开状态，从而切换用于供给材料的反应室加油站。版权所有（C）2013，JPO＆INPIT

58. 发明专利

JP2012072938A Detoxifying device and semiconductor manufacturing apparatus 审中-公开
标题翻译：脱氧装置和半导体制造装置
公开(公告)号：JP2012072938A
公开(公告)日：2012-04-12
申请号：JP2010216649
申请日：2010-09-28
申请人： Nuflare Technology Inc , 株式会社ニューフレアテクノロジー
发明人： ARAI HIDEKI , SUZUKI KUNIHIKO , KOBAYASHI TAKEHIKO
IPC分类号： F23G7/06 , H01L21/31
摘要： PROBLEM TO BE SOLVED: To provide a detoxifying device capable of accurately measuring a temperature in a combustion chamber where a waste gas is burned, and to provide a semiconductor manufacturing apparatus in which the detoxifying device is mounted to an epitaxial film deposition apparatus.SOLUTION: The detoxifying device 10 for detoxifying a waste gas 2 comprises a combustion chamber 1 to burn the waste gas 2 inside and a tubular nozzle 3 disposed on the wall of the combustion chamber 1 for supplying the waste gas 2 into the combustion chamber 1. The nozzle 3 has a shape with a decreased outer diameter toward the tip while keeping a fixed inner diameter. The semiconductor manufacturing apparatus is constituted by mounting the detoxifying device on the film deposition apparatus so as to detoxify the waste gas 2 from the film deposition apparatus.
摘要翻译：要解决的问题：提供一种能够精确地测量废气燃烧的燃烧室中的温度的解毒装置，并且提供一种半导体制造装置，其中将解毒装置安装到外延膜沉积装置。解毒废气2的解毒装置10包括：燃烧室1，用于燃烧废气2;燃烧室3，设置在燃烧室1的壁上的管状喷嘴3，用于将废气2供给燃烧喷嘴3具有朝向顶端减小的外径的形状，同时保持固定的内径。半导体制造装置是通过将成膜装置的解毒装置安装在膜沉积装置上来对废气2进行解毒而构成的。版权所有（C）2012，JPO＆INPIT

59. 发明专利

JP2012069689A Film formation apparatus and film formation method 有权
标题翻译：胶片形成装置和胶片形成方法
公开(公告)号：JP2012069689A
公开(公告)日：2012-04-05
申请号：JP2010212541
申请日：2010-09-22
申请人： Nuflare Technology Inc , Toshiba Corp , 株式会社ニューフレアテクノロジー , 株式会社東芝
发明人： DEURA KAORI , AZUMA SHINYA , SUZUKI KUNIHIKO , ITO HIDEKI
IPC分类号： H01L21/205 , C23C16/46 , C30B25/10 , H01L31/10
CPC分类号： C23C16/4584 , C23C16/46 , C30B25/10 , C30B29/403
摘要： PROBLEM TO BE SOLVED: To provide a film formation apparatus which can adjust the temperature distribution of a substrate as desired, and provide a film formation method which can form a film with desired thickness by homogeneously heating the substrate.SOLUTION: A film formation apparatus 100 comprises: a chamber 103; a susceptor 102 which is provided in the chamber 103 and on which a silicon wafer 101 is mounted; a rotation part 104 for rotating the susceptor 102; an inner heater 120 and an outer heater 121 located below the susceptor 102; and a reflector assembly part 105 located below these heaters. The reflector assembly part 105 is formed by combining an annular reflector and a disc-like reflector.
摘要翻译：要解决的问题：提供一种能够根据需要调节基板的温度分布的成膜装置，并且提供可以通过均匀加热基板来形成具有期望厚度的膜的成膜方法。解决方案：成膜装置100包括：室103; 设置在室103中并且安装硅晶片101的基座102; 用于旋转基座102的旋转部104; 位于基座102下方的内部加热器120和外部加热器121; 以及位于这些加热器下面的反射器组件部分105。反射器组件部分105通过组合环形反射器和盘状反射器而形成。版权所有（C）2012，JPO＆INPIT

60. 发明专利

JP2011198943A Semiconductor manufacturing apparatus and method thereof 审中-公开
标题翻译：半导体制造装置及其方法
公开(公告)号：JP2011198943A
公开(公告)日：2011-10-06
申请号：JP2010062922
申请日：2010-03-18
申请人： Nuflare Technology Inc , 株式会社ニューフレアテクノロジー
发明人： SUZUKI KUNIHIKO , MITANI SHINICHI
IPC分类号： H01L21/205 , C23C16/458 , H01L21/31
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor manufacturing apparatus and a method thereof, capable of unfailingly holding a wafer at a high temperature and a high-speed rotation, and forming a uniform film on the wafer.SOLUTION: The semiconductor manufacturing apparatus includes: a reaction chamber 11 for applying film-forming processing to a wafer w; a gas supply mechanism 12 provided above the reaction chamber 11 and introducing a process gas into the inside; a gas discharge mechanism 13 provided below the reaction chamber 11 and discharging the gas from the reaction chamber 11; a support member 15 provided to hold the wafer w so that an end of the wafer w is at a predetermined position in film forming, and having a wafer coming-off preventing portion protruding in a center direction from above the predetermined position; a pushing mechanism 21 for holding the wafer w above the support member 15 and movable vertically; heaters 18a, 18b for heating the wafer w so as to have a predetermined temperature distribution; and a rotation drive mechanism 17 for rotating the wafer w.
摘要翻译：要解决的问题：提供一种半导体制造装置及其方法，能够在高温和高速旋转下保持晶片，并且在晶片上形成均匀的膜。解决方案：半导体制造装置包括：用于向晶片w施加成膜处理的反应室11; 设置在反应室11上方并将处理气体引入到内部的气体供给机构12; 设置在反应室11下方并从反应室11排出气体的气体排出机构13; 提供用于保持晶片w的支撑构件15，使得晶片w的端部处于成膜的预定位置，并且具有从预定位置上方沿中心方向突出的晶片防脱部分; 用于将晶片w保持在支撑构件15上方并可垂直移动的推动机构21; 加热器18a，18b，用于加热晶片w以具有预定的温度分布; 以及用于旋转晶片w的旋转驱动机构17。

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