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51. 发明授权

US07008303B2 Web lift system for chemical mechanical planarization 失效
公开(公告)号：US07008303B2
公开(公告)日：2006-03-07
申请号：US10408032
申请日：2003-04-03
申请人： John M. White , Phillip R. Sommer , Sasson Somekh
发明人： John M. White , Phillip R. Sommer , Sasson Somekh
IPC分类号： B24B1/00 , B24B7/00
CPC分类号： B24B37/16 , B24B21/004 , B24B21/008 , B24B21/20
摘要： Generally, a method and system for lifting a web of polishing material is provided. In one embodiment, the system includes a platen that has a first lift member disposed adjacent to a first side and a second lift member disposed adjacent to a second side. The platen is adapted to support the web of polishing media that is disposed between the first and the second lift members. A method includes supporting a web of polishing media on a platen between a first lift member and a second lift member and moving at least the first lift member or the second lift member to an extended position relative the platen that places the web in a spaced-apart relation with the platen.

52. 发明授权

US06991517B2 Linear polishing sheet with window 失效
公开(公告)号：US06991517B2
公开(公告)日：2006-01-31
申请号：US10814405
申请日：2004-03-31
申请人： Fred C. Redeker , Manoocher Birang , Shijian Li , Sasson Somekh
发明人： Fred C. Redeker , Manoocher Birang , Shijian Li , Sasson Somekh
IPC分类号： B24B1/00
CPC分类号： B24B37/005 , B24B21/04 , B24B49/04 , B24B49/12 , H01L21/30625
摘要： A polishing article for chemical mechanical polishing. The polishing article includes a generally elongated polishing sheet with a polishing surface. The polishing article is formed from a material that is substantially opaque, and has a discrete region extending substantially the length of the polishing sheet that is at least semi-transparent.

53. 发明申请

US20050173239A1 End point detection for sputtering and resputtering 失效
标题翻译：溅射和再溅射的终点检测
公开(公告)号：US20050173239A1
公开(公告)日：2005-08-11
申请号：US10659902
申请日：2003-09-11
申请人： Sasson Somekh , Marc Schweitzer , John Forster , Zheng Xu , Roderick Mosely , Barry Chin , Howard Grunes
发明人： Sasson Somekh , Marc Schweitzer , John Forster , Zheng Xu , Roderick Mosely , Barry Chin , Howard Grunes
IPC分类号： C23C14/04 , C23C14/16 , C23C14/32 , C23C14/54 , C23C14/58 , G01N21/68 , H01J37/32 , H01L21/285 , H01L21/66 , H01L21/768
CPC分类号： C23C14/544 , C23C14/046 , C23C14/165 , C23C14/5833 , C23C14/5873 , G01N21/68 , H01J37/321 , H01J37/32477 , H01J37/32935 , H01J37/32963 , H01J37/3455 , H01L21/2855 , H01L21/76814 , H01L21/76844 , H01L21/76846 , H01L21/76862 , H01L21/76865 , H01L22/26 , H01L2924/0002 , H01L2924/00
摘要： Plasma etching or resputtering of a layer of sputtered materials including opaque metal conductor materials may be controlled in a sputter reactor system. In one embodiment, resputtering of a sputter deposited layer is performed after material has been sputtered deposited and while additional material is being sputter deposited onto a substrate. A path positioned within a chamber of the system directs light or other radiation emitted by the plasma to a chamber window or other optical view-port which is protected by a shield against deposition by the conductor material. In one embodiment, the radiation path is folded to reflect plasma light around the chamber shield and through the window to a detector positioned outside the chamber window. Although deposition material may be deposited onto portions of the folded radiation path, in many applications, the deposition material will be sufficiently reflective to permit the emission spectra to be detected by a spectrometer or other suitable detector without significant signal loss. The etching or resputtering may be terminated when the detector detects that an underlying layer has been reached or when some other suitable process point has been reached.
摘要翻译：可以在溅射反应器系统中控制包括不透明金属导体材料的溅射材料层的等离子体蚀刻或再溅射。在一个实施例中，溅射沉积层的溅射在材料溅射沉积之后进行，并且另外的材料被溅射沉积到衬底上。位于系统的腔室内的路径将等离子体发射的光或其他辐射引导到腔室窗口或其他光学视图端口，其被屏蔽物保护以防止被导体材料沉积。在一个实施例中，辐射路径被折叠以将等离子体光围绕室屏蔽件并且通过窗口反射到位于室窗口外部的检测器。虽然沉积材料可以沉积在折叠辐射路径的部分上，但是在许多应用中，沉积材料将被充分反射，以允许发射光谱由光谱仪或其它合适的检测器检测，而没有显着的信号损失。当检测器检测到已经到达下层或者当达到某些其它合适的处理点时，蚀刻或再溅射可以被终止。

54. 发明授权

US06848976B2 Chemical mechanical polishing with multiple polishing pads 失效
标题翻译：化学机械抛光与多个抛光垫
公开(公告)号：US06848976B2
公开(公告)日：2005-02-01
申请号：US10425684
申请日：2003-04-28
申请人： Sasson Somekh
发明人： Sasson Somekh
IPC分类号： B24B7/22 , B24B37/04 , B24B49/12 , B24D13/14
CPC分类号： B24B37/245 , B24B37/013 , B24B37/042 , B24B37/205 , B24B49/12
摘要： In chemical mechanical polishing, a substrate is planarized with one or more fixed-abrasive polishing pads. Then the substrate is polished with a standard polishing pad to remove scratch defects created by the fixed-abrasive polishing pads.
摘要翻译：在化学机械抛光中，用一个或多个固定研磨抛光垫将基底平坦化。然后用标准抛光垫抛光衬底，以消除由固定研磨抛光垫产生的划痕缺陷。

55. 发明授权

US06763130B1 Real time defect source identification 有权
标题翻译：实时缺陷源识别
公开(公告)号：US06763130B1
公开(公告)日：2004-07-13
申请号：US09358512
申请日：1999-07-21
申请人： Sasson Somekh , Amotz Maimon
发明人： Sasson Somekh , Amotz Maimon
IPC分类号： G06K900
CPC分类号： G05B19/41875 , G05B2219/45031 , G05B2219/50064 , H01L22/26 , H01L2924/0002 , Y02P90/10 , Y02P90/12 , Y02P90/22 , Y02P90/86 , H01L2924/00
摘要： A method and apparatus for inspecting a semiconductor wafer provides real-time information identifying tools visited by wafers under inspection and the process parameters used at those tools, and displays this information at the wafer inspection tool. Embodiments include inspecting a wafer using an inspection tool, such as a CCD imager, generating a list of the tools visited by the wafer from data retrieved from a conventional manufacturing execution system and displaying the list at the inspection tool, along with a defect map. The user may then request that a set of process parameters and tool parameters for any of the tools identified on the list be displayed at the inspection tool. Thus, at the time that defects are discovered, the user is automatically provided with a list of the tools visited by the wafer and has easy access to the process parameters used at each of those tools. This information facilitates tracing the causes of defects to their source, such as to a particular process step or to a particular piece of processing equipment, and enables early and effective corrective action to be implemented.
摘要翻译：用于检查半导体晶片的方法和装置提供了识别被检查晶片所访问的工具的实时信息以及在这些工具中使用的工艺参数，并且在晶片检查工具上显示该信息。实施例包括使用诸如CCD成像仪之类的检查工具来检查晶片，并从缺陷图连同从常规制造执行系统检索的数据中产生由晶片访问的工具列表，并在检查工具上显示列表。然后，用户可以请求在检查工具上显示用于列表上标识的任何工具的一组过程参数和工具参数。因此，在发现缺陷的时刻，用户被自动提供由晶片访问的工具的列表，并且可以容易地访问在这些工具中的每个工具使用的工艺参数。该信息有助于将缺陷的原因追溯到其来源，例如到特定的处理步骤或特定的处理设备，并且能够实现早期和有效的纠正措施。

56. 发明授权

US06585563B1 In-situ monitoring of linear substrate polishing operations 失效
标题翻译：线性衬底抛光操作的原位监控
公开(公告)号：US06585563B1
公开(公告)日：2003-07-01
申请号：US09724846
申请日：2000-11-28
申请人： Fred C. Redeker , Manoocher Birang , Shijian Li , Sasson Somekh
发明人： Fred C. Redeker , Manoocher Birang , Shijian Li , Sasson Somekh
IPC分类号： B24B100
CPC分类号： B24B37/005 , B24B21/04 , B24B49/04 , B24B49/12 , H01L21/30625
摘要： A substrate polishing scheme (apparatus and method) is described according to which a polishing surface of a polishing sheet is driven in a generally linear direction by a drive mechanism, a surface of a substrate is held against the polishing surface of the polishing sheet by a polishing head, and the substrate is probed through the polishing sheet by a monitoring system.
摘要翻译：描述了基板抛光方案（装置和方法），根据该基板抛光方案，研磨片的抛光表面通过驱动机构在大致线性方向上被驱动，基板的表面通过一个抛光头，并且通过监视系统通过抛光片探测基板。

57. 发明授权

US06427703B1 Method and apparatus for removing carbon contamination in a sub-atmospheric charged particle beam lithography system 失效
标题翻译：用于去除亚大气压带电粒子束光刻系统中碳污染的方法和装置
公开(公告)号：US06427703B1
公开(公告)日：2002-08-06
申请号：US09510117
申请日：2000-02-22
申请人： Sasson Somekh
发明人： Sasson Somekh
IPC分类号： B08B700
CPC分类号： B82Y10/00 , B82Y40/00 , H01J37/02 , H01J37/3174 , H01J2237/022 , H01J2237/182 , Y10S134/902
摘要： A cleaning system for use with a micro-column array, electron beam lithography system is described. The cleaning system includes an oxidizer source and an oxidizer distribution mechanism that introduces an oxidizer into the imaging chamber of the lithography system. The oxidizer is pumped into the chamber at a flow rate and pressure that maintains a required sub-atmospheric pressure within the imaging chamber. The oxidizer acts to oxidize carbon contamination that may be present in the imaging chamber or on the surfaces of components within the chamber, such as the imaging mask. A volatile oxidized carbon gas is produced by the oxidization of the carbon contaminants. The oxidized carbon gas is pumped out of the imaging chamber to thereby remove the carbon contamination from the chamber.
摘要翻译：描述了一种用于微柱阵列，电子束光刻系统的清洁系统。清洁系统包括氧化剂源和氧化剂分配机构，其将氧化剂引入到光刻系统的成像室中。将氧化剂以保持成像室内所需的低于大气压的流量和压力泵入腔室。氧化剂用于氧化可能存在于成像腔室中或室内部件表面上的碳污染物，例如成像掩模。通过碳污染物的氧化产生挥发性氧化碳气体。将氧化的碳气从成像室泵出，从而从室中除去碳污染物。

58. 发明授权

US06394109B1 Method and apparatus for removing carbon contamination in a sub-atmospheric charged particle beam lithography system 失效
标题翻译：用于去除亚大气压带电粒子束光刻系统中碳污染的方法和装置
公开(公告)号：US06394109B1
公开(公告)日：2002-05-28
申请号：US09290282
申请日：1999-04-13
申请人： Sasson Somekh
发明人： Sasson Somekh
IPC分类号： B08B700
CPC分类号： B82Y10/00 , B82Y40/00 , H01J37/02 , H01J37/3174 , H01J2237/022 , H01J2237/182 , Y10S134/902
摘要： A cleaning system for use with a charged particle beam lithography system is described. The cleaning system includes an oxidizer source and an oxidizer distribution mechanism that introduces an oxidizer into the imaging chamber of the lithography system. The oxidizer is pumped into the chamber at a flow rate and pressure that maintains a required sub-atmospheric pressure within the imaging chamber. The oxidizer acts to oxidize carbon contamination that may be present in the imaging chamber or on the surfaces of components within the chamber, such as the imaging mask. A volatile oxidized carbon gas is produced by the oxidization of the carbon contaminants. The oxidized carbon gas is pumped out of the imaging chamber to thereby remove the carbon contamination from the chamber.
摘要翻译：描述了一种用于带电粒子束光刻系统的清洁系统。清洁系统包括氧化剂源和氧化剂分配机构，其将氧化剂引入到光刻系统的成像室中。将氧化剂以保持成像室内所需的低于大气压的流量和压力泵入腔室。氧化剂用于氧化可能存在于成像腔室中或室内部件表面上的碳污染物，例如成像掩模。通过碳污染物的氧化产生挥发性氧化碳气体。将氧化的碳气从成像室泵出，从而从室中除去碳污染物。

59. 发明授权

US5849136A High frequency semiconductor wafer processing apparatus and method 失效
标题翻译：高频半导体晶片加工设备及方法
公开(公告)号：US5849136A
公开(公告)日：1998-12-15
申请号：US754833
申请日：1996-11-22
申请人： Donald M. Mintz , Hiroji Hanawa , Sasson Somekh , Dan Maydan , Kenneth S. Collins
发明人： Donald M. Mintz , Hiroji Hanawa , Sasson Somekh , Dan Maydan , Kenneth S. Collins
IPC分类号： H01J37/32 , H05H1/00
CPC分类号： H01J37/32082 , H01J37/32183
摘要： A plasma process apparatus capable of operation significantly above 13.56 MHz can produce reduced self-bias voltage of the powered electrode to enable softer processes that do not damage thin layers that are increasingly becoming common in high speed and high density integrated circuits. A nonconventional match network is used to enable elimination of reflections at these higher frequencies. Automatic control of match network components enables the rf frequency to be adjusted to ignite the plasma and then to operate at a variable frequency selected to minimize process time without significant damage to the integrated circuit.
摘要翻译：能够显着地高于13.56MHz的等离子体处理装置可以产生被动电极的自偏置电压降低，以使得不会损害在高速和高密度集成电路中越来越普遍的薄层的较软工艺。使用非常规匹配网络来消除这些较高频率处的反射。匹配网络组件的自动控制使得可以调整射频频率以点燃等离子体，然后以选定的可变频率工作，以最小化处理时间，而不会对集成电路造成显着损害。

60. 发明授权

US5618382A High-frequency semiconductor wafer processing apparatus and method 失效
标题翻译：高频半导体晶片加工装置及方法
公开(公告)号：US5618382A
公开(公告)日：1997-04-08
申请号：US83750
申请日：1993-06-25
申请人： Donald M. Mintz , Hiroji Hanawa , Sasson Somekh , Dan Maydan , Kenneth S. Collins
发明人： Donald M. Mintz , Hiroji Hanawa , Sasson Somekh , Dan Maydan , Kenneth S. Collins
IPC分类号： H01J37/32 , H05H1/46 , H05H1/00
CPC分类号： H01J37/32174 , H01J37/32082 , H05H1/46 , Y10S148/051
摘要： A plasma process apparatus capacitor operation significantly above 13.56 MHz can produce reduced self-bias voltage of the powered electrode to enable softer processes that do not damage thin layers that are increasingly becoming common in high speed and high density integrated circuits. A nonconventional match network is used to enable elimination of reflections at these higher frequencies. Automatic control of match network components enables the rf frequency to be adjusted to ignite the plasma and then to operate at a variable frequency selected to minimize process time without significant damage to the integrated circuit.
摘要翻译：等离子体处理装置的电容器操作明显高于13.56MHz可以产生被动电极的自偏压降低，以使得不会损坏在高速和高密度集成电路中越来越普遍的薄层的较软工艺。使用非常规匹配网络来消除这些较高频率处的反射。匹配网络组件的自动控制使得可以调整射频频率以点燃等离子体，然后以选定的可变频率工作，以最小化处理时间，而不会对集成电路造成显着损害。

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