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51. 发明申请

US20070235644A1 Inspection system by charged particle beam and method of manufacturing devices using the same 有权
标题翻译：带电粒子束的检查系统及使用其的制造装置的方法
公开(公告)号：US20070235644A1
公开(公告)日：2007-10-11
申请号：US11806573
申请日：2007-06-01
申请人： Mamoru Nakasuji , Nobuharu Noji , Tohru Satake , Masahiro Hatakeyama , Toshifumi Kimba , Hiroshi Sobukawa , Shoji Yoshikawa , Takeshi Murakami , Kenji Watanabe , Tsutomu Karimata , Shin Oowada , Mutsumi Saito , Yuichiro Yamazaki , Takamitsu Nagai , Ichirota Nagahama
发明人： Mamoru Nakasuji , Nobuharu Noji , Tohru Satake , Masahiro Hatakeyama , Toshifumi Kimba , Hiroshi Sobukawa , Shoji Yoshikawa , Takeshi Murakami , Kenji Watanabe , Tsutomu Karimata , Shin Oowada , Mutsumi Saito , Yuichiro Yamazaki , Takamitsu Nagai , Ichirota Nagahama
IPC分类号： G01N23/00
CPC分类号： H01J29/70 , G01N23/225 , G01N23/2251 , G01N23/227 , H01J37/06 , H01J37/073 , H01J37/141 , H01J37/185 , H01J37/20 , H01J37/222 , H01J37/244 , H01J37/266 , H01J37/28 , H01J2237/082 , H01J2237/202 , H01J2237/20228 , H01J2237/204 , H01J2237/22 , H01J2237/24564 , H01J2237/2806 , H01J2237/2816 , H01J2237/2817 , H01L21/6719 , H01L21/67213
摘要： An inspection apparatus by an electron beam comprises: an electron-optical device 70 having an electron-optical system for irradiating the object with a primary electron beam from an electron beam source, and a detector for detecting the secondary electron image projected by the electron-optical system; a stage system 50 for holding and moving the object relative to the electron-optical system; a mini-environment chamber 20 for supplying a clean gas to the object to prevent dust from contacting to the object; a working chamber 31 for accommodating the stage device, the working chamber being controllable so as to have a vacuum atmosphere; at least two loading chambers 41, 42 disposed between the mini-environment chamber and the working chamber, adapted to be independently controllable so as to have a vacuum atmosphere; and a loader 60 for transferring the object to the stage system through the loading chambers.
摘要翻译：电子束检查装置包括：电子光学装置70，具有用于从电子束源向一个电子束照射物体的电子 - 光学系统;以及用于检测由电子束投射的二次电子图像的检测器，光学系统; 用于相对于电子 - 光学系统保持和移动物体的平台系统50; 微型环境室20，用于向物体供应清洁气体，以防止灰尘与物体接触; 用于容纳平台装置的工作室31，工作室可控制为具有真空气氛; 设置在微环境室和工作室之间的至少两个装载室41,42适于独立控制以具有真空气氛; 以及用于通过装载室将物体传送到舞台系统的装载器60。

52. 发明授权

US07223973B2 Apparatus for inspection with electron beam, method for operating same, and method for manufacturing semiconductor device using former 失效
公开(公告)号：US07223973B2
公开(公告)日：2007-05-29
申请号：US11037084
申请日：2005-01-19
申请人： Toshifumi Kimba , Tohru Satake , Tsutomu Karimata , Kenji Watanabe , Nobuharu Noji , Takeshi Murakami , Masahiro Hatakeyama , Mamoru Nakasuji , Hirosi Sobukawa , Shoji Yoshikawa , Shin Oowada , Mutsumi Saito
发明人： Toshifumi Kimba , Tohru Satake , Tsutomu Karimata , Kenji Watanabe , Nobuharu Noji , Takeshi Murakami , Masahiro Hatakeyama , Mamoru Nakasuji , Hirosi Sobukawa , Shoji Yoshikawa , Shin Oowada , Mutsumi Saito
IPC分类号： G01N23/225
CPC分类号： H01J37/222 , G01N23/225 , G01N23/2251 , H01J37/06 , H01J37/073 , H01J37/185 , H01J37/20 , H01J37/244 , H01J37/28 , H01J2237/0216 , H01J2237/082 , H01J2237/2002 , H01J2237/2007 , H01J2237/202 , H01J2237/20228 , H01J2237/204 , H01J2237/22 , H01J2237/24564 , H01J2237/2806 , H01J2237/2813 , H01J2237/2816 , H01J2237/2817 , H01L2224/48227 , H01L2924/01019 , H01L2924/01025 , H01L2924/01057 , H01L2924/01067 , H01L2924/01078 , H01L2924/10253 , H01L2924/12032 , H01L2924/3025 , H01L2924/00
摘要： A substrate inspection apparatus 1-1 (FIG. 1) of the present invention performs the following steps of: carrying a substrate “S” to be inspected into an inspection chamber 23-1; maintaining a vacuum in said inspection chamber; isolating said inspection chamber from a vibration; moving successively said substrate by means of a stage 26-1 with at least one degree of freedom; irradiating an electron beam having a specified width; helping said electron beam reach to a surface of said substrate via a primary electron optical system 10-1; trapping secondary electrons emitted from said substrate via a secondary electron optical system 20-1 and guiding it to a detecting system 35-1; forming a secondary electron image in an image processing system based on a detection signal of a secondary electron beam obtained by said detecting system; detecting a defective location in said substrate based on the secondary electron image formed by said image processing system; indicating and/or storing said defective location in said substrate by CPU 37-1; and taking said completely inspected substrate out of the inspection chamber. Thereby, the defect inspection on the substrate can be performed successively with high level of accuracy and efficiency as well as with higher throughput.

53. 发明授权

US07129485B2 Electron beam apparatus and method of manufacturing semiconductor device using the apparatus 失效
公开(公告)号：US07129485B2
公开(公告)日：2006-10-31
申请号：US10766041
申请日：2004-01-29
申请人： Mamoru Nakasuji , Nobuharu Noji , Tohru Satake , Masahiro Hatakeyama , Kenji Watanabe , Takao Kato , Hirosi Sobukawa , Tsutomu Karimata , Shoji Yoshikawa , Toshifumi Kimba , Shin Oowada , Mutsumi Saito , Muneki Hamashima
发明人： Mamoru Nakasuji , Nobuharu Noji , Tohru Satake , Masahiro Hatakeyama , Kenji Watanabe , Takao Kato , Hirosi Sobukawa , Tsutomu Karimata , Shoji Yoshikawa , Toshifumi Kimba , Shin Oowada , Mutsumi Saito , Muneki Hamashima
IPC分类号： G01N23/00
CPC分类号： B82Y10/00 , B82Y40/00 , G01N23/225 , H01J37/06 , H01J37/063 , H01J37/073 , H01J37/185 , H01J37/20 , H01J37/222 , H01J37/244 , H01J37/28 , H01J37/3174 , H01J2237/0435 , H01J2237/0635 , H01J2237/082 , H01J2237/202 , H01J2237/20228 , H01J2237/204 , H01J2237/22 , H01J2237/2446 , H01J2237/24485 , H01J2237/24564 , H01J2237/2806 , H01J2237/2816 , H01J2237/2817
摘要： The present invention provides an electron beam apparatus for irradiating a sample with primary electron beams to detect secondary electron beams generated from a surface of the sample by the irradiation for evaluating the sample surface. In the electron beam apparatus, an electron gun has a cathode for emitting primary electron beams. The cathode includes a plurality of emitters for emitting primary electron beams, arranged apart from one another on a circle centered at an optical axis of a primary electro-optical system. The plurality of emitters are arranged such that when the plurality of emitters are projected onto a straight line parallel with a direction in which the primary electron beams are scanned, resulting points on the straight line are spaced at equal intervals.

54. 发明授权

US07095022B2 Electron beam apparatus and method of manufacturing semiconductor device using the apparatus 有权
公开(公告)号：US07095022B2
公开(公告)日：2006-08-22
申请号：US09985322
申请日：2001-11-02
申请人： Mamoru Nakasuji , Nobuharu Noji , Tohru Satake , Masahiro Hatakeyama , Kenji Watanabe , Takao Kato , Hirosi Sobukawa , Tsutomu Karimata , Shoji Yoshikawa , Toshifumi Kimba , Shin Oowada , Mutsumi Saito , Muneki Hamashima
发明人： Mamoru Nakasuji , Nobuharu Noji , Tohru Satake , Masahiro Hatakeyama , Kenji Watanabe , Takao Kato , Hirosi Sobukawa , Tsutomu Karimata , Shoji Yoshikawa , Toshifumi Kimba , Shin Oowada , Mutsumi Saito , Muneki Hamashima
IPC分类号： H01J37/26
CPC分类号： B82Y10/00 , B82Y40/00 , G01N23/225 , H01J37/06 , H01J37/063 , H01J37/073 , H01J37/185 , H01J37/20 , H01J37/222 , H01J37/244 , H01J37/28 , H01J37/3174 , H01J2237/0435 , H01J2237/0635 , H01J2237/082 , H01J2237/202 , H01J2237/20228 , H01J2237/204 , H01J2237/22 , H01J2237/2446 , H01J2237/24485 , H01J2237/24564 , H01J2237/2806 , H01J2237/2816 , H01J2237/2817
摘要： The present invention provides an electron beam apparatus for irradiating a sample with primary electron beams to detect secondary electron beams generated from a surface of the sample by the irradiation for evaluating the sample surface. In the electron beam apparatus, an electron gun has a cathode for emitting primary electron beams. The cathode includes a plurality of emitters for emitting primary electron beams, arranged apart from one another on a circle centered at an optical axis of a primary electro-optical system. The plurality of emitters are arranged such that when the plurality of emitters are projected onto a straight line parallel with a direction in which the primary electron beams are scanned, resulting points on the straight line are spaced at equal intervals.

55. 发明授权

US06909092B2 Electron beam apparatus and device manufacturing method using same 有权
标题翻译：电子束装置及其制造方法
公开(公告)号：US06909092B2
公开(公告)日：2005-06-21
申请号：US10437889
申请日：2003-05-15
申请人： Ichirota Nagahama , Yuichiro Yamazaki , Kenji Watanabe , Masahiro Hatakeyama , Tohru Satake , Nobuharu Noji
发明人： Ichirota Nagahama , Yuichiro Yamazaki , Kenji Watanabe , Masahiro Hatakeyama , Tohru Satake , Nobuharu Noji
IPC分类号： G01N23/225 , G01K1/08 , G01N23/00 , G01Q30/04 , G21K7/00 , H01J37/05 , H01J37/22 , H01J37/244 , H01J37/28 , H01J37/285 , H01J37/29 , H01L21/66
CPC分类号： H01J37/28 , H01J2237/0044 , H01J2237/2817
摘要： A defect inspecting apparatus is provided for generating a less distorted test image to reliably observe a surface of a sample for detecting defects thereon. The defect detecting apparatus comprises a primary electron beam source for irradiating a sample, electrostatic lenses for focusing secondary electrons emitted from the surface of the sample irradiated with the primary electron beam, a detector for detecting the secondary electrons, and an image processing unit for processing a signal from the detector. Further, a second electron source may be provided for emitting an electron beam irradiated to the sample, wherein the sample may be irradiated with the electron beam from the second electron source before it is irradiated with the primary electron beam from the first electron source for observing the sample. A device manufacturing method is also provided for inspecting devices under processing with high throughput using the defect detecting apparatus.
摘要翻译：提供了一种缺陷检查装置，用于产生较小失真的测试图像，以可靠地观察用于检测缺陷的样品表面。缺陷检测装置包括用于照射样品的一次电子束源，用于聚焦从一次电子束照射的样品的表面发射的二次电子的静电透镜，用于检测二次电子的检测器，以及用于处理的图像处理单元来自检测器的信号。此外，可以提供第二电子源用于发射照射到样品的电子束，其中在用来自第一电子源的一次电子束照射之前，可以用来自第二电子源的电子束照射样品，用于观察例子。还提供了一种装置制造方法，用于使用缺陷检测装置以高吞吐量检查处理装置。

56. 发明申请

US20050045821A1 Testing apparatus using charged particles and device manufacturing method using the testing apparatus 有权
标题翻译：使用带电粒子的测试装置和使用该测试装置的装置制造方法
公开(公告)号：US20050045821A1
公开(公告)日：2005-03-03
申请号：US10754623
申请日：2004-01-12
申请人： Nobuharu Noji , Tohru Satake , Hirosi Sobukawa , Toshifumi Kimba , Masahiro Hatakeyama , Shoji Yoshikawa , Takeshi Murakami , Kenji Watanabe , Tsutomu Karimata , Kenichi Suematsu , Yutaka Tabe , Ryo Tajima , Keiichi Tohyama
发明人： Nobuharu Noji , Tohru Satake , Hirosi Sobukawa , Toshifumi Kimba , Masahiro Hatakeyama , Shoji Yoshikawa , Takeshi Murakami , Kenji Watanabe , Tsutomu Karimata , Kenichi Suematsu , Yutaka Tabe , Ryo Tajima , Keiichi Tohyama
IPC分类号： G01N23/225 , H01J37/05 , H01J37/28 , G21K7/00 , G01N23/00
CPC分类号： H01J37/20 , G01N23/2204 , G01N23/225 , H01J37/05 , H01J37/28 , H01J2237/202 , H01J2237/2441 , H01J2237/2446 , H01J2237/2801 , H01J2237/2817 , H01L21/6833 , H01L2223/54466
摘要： A system for further enhancing speed, i.e. improving throughput in a SEM-type inspection apparatus is provided. An inspection apparatus for inspecting a surface of a substrate produces a crossover from electrons emitted from an electron beam source 25••1, then forms an image under a desired magnification in the direction of a sample W to produce a crossover. When the crossover is passed, electrons as noises are removed from the crossover with an aperture, an adjustment is made so that the crossover becomes a parallel electron beam to irradiate the substrate in a desired sectional form. The electron beam is produced such that the unevenness of illuminance is 10% or less. Electrons emitted from the sample W are detected by a detector 25•11.
摘要翻译：提供了一种用于进一步提高速度的系统，即提高SEM型检查装置中的生产量。用于检查基板的表面的检查装置产生从电子束源25..1发射的电子的交叉，然后在样品W的方向上以期望的倍率形成图像以产生交叉。当交叉通过时，作为噪声的电子从具有孔的交叉点移除，进行调整，使得交叉成为平行电子束以以期望的分段形式照射基板。产生电子束，使照度不均匀为10％以下。由检测器25.11检测从样品W发射的电子。

57. 发明授权

US06671034B1 Microfabrication of pattern imprinting 失效
标题翻译：图案压印的微加工
公开(公告)号：US06671034B1
公开(公告)日：2003-12-30
申请号：US09301311
申请日：1999-04-29
申请人： Masahiro Hatakeyama , Katsunori Ichiki , Tohru Satake , Yotaro Hatamura , Masayuki Nakao
发明人： Masahiro Hatakeyama , Katsunori Ichiki , Tohru Satake , Yotaro Hatamura , Masayuki Nakao
IPC分类号： G03B2754
CPC分类号： B82Y10/00 , B82Y40/00 , G03F1/50 , G03F7/0002 , G03F7/2014
摘要： The object of the present invention IS to provide an optical imprinting apparatus and method for producing a two-dimensional pattern, having line widths less than the wavelength of an exposure light. The evarnescent (proximity) field effect is adopted to realize the apparatus and method. An optical imprinting apparatus comprises: a container in which light is enclosed therein; an exposure-mask having a proximity field exposure pattern firmly fixed to a section of said container for exposing said exposure pattern on a photo-sensitive material through an evanescent field by said light enclosed therein; and a light source for supplying said light in said container.
摘要翻译：本发明的目的是提供一种用于产生具有小于曝光光的波长的线宽的二维图案的光学压印装置和方法。采用实现（邻近）场效应实现装置和方法。一种光学压印设备包括：容纳在其中的光; 曝光掩模，其具有牢固地固定在所述容器的一部分上的接近场曝光图案，用于通过所述光包围在所述光敏材料上的所述光衰弱场曝光所述曝光图案; 以及用于将所述光提供在所述容器中的光源。

58. 发明授权

US6015976A Fabrication apparatus employing energy beam 失效
标题翻译：采用能量束的制造装置
公开(公告)号：US6015976A
公开(公告)日：2000-01-18
申请号：US195254
申请日：1998-11-18
申请人： Masahiro Hatakeyama , Katsunori Ichiki , Takao Kato , Yotaro Hatamura , Masayuki Nakao
发明人： Masahiro Hatakeyama , Katsunori Ichiki , Takao Kato , Yotaro Hatamura , Masayuki Nakao
IPC分类号： G03F1/00 , G03F1/20 , G03F7/00 , G03F7/20 , H01J9/02 , H01L21/033 , H01L21/308 , H01J37/302
CPC分类号： H01L21/3086 , G03F7/00 , G03F7/001 , G03F7/2065 , G03F7/70358 , H01J9/025 , H01L21/0331 , H01L21/0337 , H01J2209/0223
摘要： Three-dimensional ultra-fine micro-fabricated structures of the order of .mu.m and less are produced for use in advanced optical communication systems and quantum effect devices. Basic components are an energy beam source, a mask member and a specimen stage. The mask member is an independent component, and various combinations of relative movements of the mask member with respect to the beam axis and/or workpiece can be made with high precision to produce curved or slanted surfaces on a workpiece, thereby producing multiple lines or arrays of convex or concave micro-lenses. Other examples of fine-structures include deposition of thin films in a multiple line pattern or in an array pattern. Because of flexibility of fabrication and material, labyrinth seals having curved surfaces with grooved structures can be used as friction reduction devices for bearing components. Fine groove dimensions of the order of nm are possible. Energy beams can be any of fast atomic beams, ion beams, electron beam, laser beams, radiation beams, X-ray beams and radical particle beams. Parallel beams are often used, but when a focused bean is used, a technique of reduced projection imaging can be utilized to produce fine-structures of the order of nm.
摘要翻译：产生了数量级小于等于30的数量级的三维超细微结构，用于先进的光通信系统和量子效应器件。基本组件是能量束源，掩模构件和样品台。掩模构件是独立的部件，并且可以高精度地制造掩模构件相对于射束轴线和/或工件的相对运动的各种组合，以在工件上产生弯曲或倾斜的表面，由此产生多个线或阵列的凸或微型微透镜。精细结构的其他实例包括以多线图案或阵列图案沉积薄膜。由于制造和材料的灵活性，具有带槽结构的曲面的迷宫式密封件可用作轴承部件的摩擦减小装置。可以使nm的数量级的细槽尺寸。能量束可以是快速原子束，离子束，电子束，激光束，辐射束，X射线束和自由基粒子束中的任何一种。通常使用平行光束，但是当使用聚焦光束时，可以利用减少投影成像的技术来产生nm级数的精细结构。

59. 发明授权

US5677011A Processing method using fast atom beam 失效
标题翻译：加工方法采用快原子束
公开(公告)号：US5677011A
公开(公告)日：1997-10-14
申请号：US691366
申请日：1996-08-02
申请人： Masahiro Hatakeyama , Chikako Takatou
发明人： Masahiro Hatakeyama , Chikako Takatou
IPC分类号： G21K1/00 , B23K15/00 , B23K17/00 , C23F4/00 , G03F7/20 , H01L21/302 , H05H3/02 , C08J7/06
CPC分类号： G03F7/2065
摘要： There are disclosed a processing method and a processing apparatus using a fast atom beam to process a micro-sized structure on a desired face and portion of a workpiece having a complex shape. In this invention, an electron beam and/or a focused ion beam is applied to a surface of a workpiece to produce a masking film layer on the workpiece. After that, a fast atom beam is applied to the workpiece remove the surface layer of the workpiece where the masking film layer is not formed.
摘要翻译：公开了一种使用快速原子束来处理具有复杂形状的工件的所需面和部分上的微尺寸结构的处理方法和处理装置。在本发明中，电子束和/或聚焦离子束被施加到工件的表面上，以在工件上产生掩模膜层。之后，将快速原子束施加到工件上去除未形成掩模膜层的工件的表面层。

60. 发明申请

US20130313429A1 METHOD AND APPARATUS FOR INSPECTING SAMPLE SURFACE 有权
公开(公告)号：US20130313429A1
公开(公告)日：2013-11-28
申请号：US13954425
申请日：2013-07-30
申请人： Nobuharu Noji , Yoshihiko Naito , Hirosi Sobukawa , Kenji Terao , Masahiro Hatakeyama , Katsuya Okumura
发明人： Nobuharu Noji , Yoshihiko Naito , Hirosi Sobukawa , Kenji Terao , Masahiro Hatakeyama , Katsuya Okumura
IPC分类号： H01J37/26
CPC分类号： H01J37/265 , G01R31/307 , H01J37/04 , H01J2237/2441 , H01J2237/2446 , H01J2237/2594 , H01J2237/2817
摘要： Provided is a method and an apparatus for inspecting a sample surface with high accuracy. Provided is a method for inspecting a sample surface by using an electron beam method sample surface inspection apparatus, in which an electron beam generated by an electron gun of the electron beam method sample surface inspection apparatus is irradiated onto the sample surface, and secondary electrons emanating from the sample surface are formed into an image toward an electron detection plane of a detector for inspecting the sample surface, the method characterized in that a condition for forming the secondary electrons into an image on a detection plane of the detector is controlled such that a potential in the sample surface varies in dependence on an amount of the electron beam irradiated onto the sample surface.

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