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51. 发明申请

US20110027617A1 Methods of Forming Strontium Titanate Films 失效
公开(公告)号：US20110027617A1
公开(公告)日：2011-02-03
申请号：US12793614
申请日：2010-06-03
申请人： Laura M. Matz , Xiangxin Rui , Xinjian Lei , Sunil Shanker , Moo-Sung Kim , Nobi Fuchigami , Iain Buchanan , Duong Anh , Sandra Malhotra , Imran Hashim
发明人： Laura M. Matz , Xiangxin Rui , Xinjian Lei , Sunil Shanker , Moo-Sung Kim , Nobi Fuchigami , Iain Buchanan , Duong Anh , Sandra Malhotra , Imran Hashim
IPC分类号： B32B9/00
CPC分类号： C23C16/45531 , C23C16/409 , H01L21/02197 , H01L21/0228 , H01L21/02356 , H01L21/3142 , H01L21/31691 , H01L28/56
摘要： Embodiments of the current invention include methods of forming a strontium titanate (SrTiO3) film using atomic layer deposition (ALD). More particularly, the method includes forming a plurality of titanium oxide (TiO2) unit films using ALD and forming a plurality of strontium oxide (SrO) unit films using ALD. The combined thickness of the TiO2 and SrO unit films is less than approximately 5 angstroms. The TiO2 and SrO units films are then annealed to form a strontium titanate layer.

52. 发明申请

US20100173075A1 High Coordination Sphere Group 2 Metal B-Diketiminate Precursors 有权
标题翻译：高配位球2组金属B-Diketiminate前体
公开(公告)号：US20100173075A1
公开(公告)日：2010-07-08
申请号：US12535192
申请日：2009-08-04
申请人： John Anthony Thomas Norman , Xinjian Lei
发明人： John Anthony Thomas Norman , Xinjian Lei
IPC分类号： C07F3/00 , C07C249/02 , C23C16/40 , C23C16/44 , C09D5/00
CPC分类号： C07C211/14 , C07C217/40 , C07C225/06 , C23C16/18
摘要： The present invention is directed to high coordination sphere Group 2 metal β-diketiminate compositions, such as bis(N-(2,2-methoxyethyl)-4-(2,2-methoxyethylimino)-2-penten-2-aminato) barium; and the deposition of the metals of such metal ligand compositions by chemical vapor deposition, pulsed chemical vapor deposition, molecular layer deposition or atomic layer deposition to produce Group 2 metal containing films, such as barium strontium titanate films or strontium titanate films or barium doped lanthanate as high k materials for electronic device manufacturing.
摘要翻译：本发明涉及高配位球2族金属和二铬酸盐组合物，例如双（N-（2,2-甲氧基乙基）-4-（2,2-甲氧基乙基亚氨基）-2-戊烯-2-氨基）钡; 以及通过化学气相沉积，脉冲化学气相沉积，分子层沉积或原子层沉积沉积这种金属配体组合物的金属，以产生第二族金属含有膜，例如钛酸钡锶膜或钛酸锶薄膜或掺杂钡的镧系元素作为电子设备制造的高k材料。

53. 发明授权

US07064227B1 Precursors for silica or metal silicate films 有权
标题翻译：二氧化硅或金属硅酸盐薄膜的前体
公开(公告)号：US07064227B1
公开(公告)日：2006-06-20
申请号：US11008069
申请日：2004-12-09
申请人： Xinjian Lei , Ron Rulkens
发明人： Xinjian Lei , Ron Rulkens
IPC分类号： C07F7/02
CPC分类号： C07F7/045 , C23C16/40
摘要： A composition selected from the group consisting of bis(tert-butoxy)(isopropoxy)silanol, bis(isopropoxy)(tert-butoxy)silanol, bis(tert-pentoxy)(isopropoxy)silanol, bis(isopropoxy)(tert-pentoxy)silanol, bis(tert-pentoxy)(tert-butoxy)silanol, bis(tert-butoxy)(tert-pentoxy)silanol and mixtures thereof; its use to form a metal or metalloid silicate layer on a substrate and the synthesis of the mixed alkoxysilanols.
摘要翻译：选自双（叔丁氧基）（异丙氧基）硅烷醇，双（异丙氧基）（叔丁氧基）硅烷醇，双（叔戊氧基）（异丙氧基）硅烷醇，双（异丙氧基）（叔戊氧基）硅烷醇，双（叔戊氧基）（叔丁氧基）硅烷醇，双（叔丁氧基）（叔戊氧基）硅烷醇及其混合物; 其用于在基材上形成金属或准金属硅酸盐层和混合的烷氧基硅烷醇的合成。

54. 发明授权

US08708320B2 Splashguard and inlet diffuser for high vacuum, high flow bubbler vessel 有权
标题翻译：用于高真空，高流量起泡器容器的防溅和入口扩散器
公开(公告)号：US08708320B2
公开(公告)日：2014-04-29
申请号：US11939109
申请日：2007-11-13
申请人： Thomas Andrew Steidl , Charles Michael Birtcher , Xinjian Lei
发明人： Thomas Andrew Steidl , Charles Michael Birtcher , Xinjian Lei
IPC分类号： B01F3/04
CPC分类号： C23C16/4482 , C23C16/448
摘要： The present invention is a bubbler having a diptube inlet ending in a bubble size reducing outlet and at least one baffle disc positioned between the outlet of the diptube and the outlet of the bubbler to provide a narrow annular space between the baffle disc and the wall of the bubbler to prevent liquid droplets from entering the outlet to the bubbler. The bubble size reducing outlet is an elongated cylindrical porous metal frit situated in a sump of approximately the same dimensions. A metal frit is placed at the inlet of the outlet of the bubbler. The present invention is also a process of delivering a chemical precursor from a bubbler vessel having the above structure.
摘要翻译：本发明是一种起泡器，其具有终止于气泡尺寸减小出口的二通孔入口和至少一个位于汲取管的出口和起泡器的出口之间的挡板，以在挡板和壁之间提供窄的环形空间起泡器以防止液滴进入出口到起泡器。气泡尺寸减小出口是位于大致相同尺寸的贮槽中的细长圆柱形多孔金属玻璃料。金属玻璃料放置在起泡器出口的入口处。本发明也是从具有上述结构的起泡容器输送化学前体的方法。

55. 发明授权

US08642797B2 Amidate precursors for depositing metal containing films 有权
标题翻译：用于沉积含金属膜的酰胺化前体
公开(公告)号：US08642797B2
公开(公告)日：2014-02-04
申请号：US13030227
申请日：2011-02-18
申请人： Sergei Vladimirovich Ivanov , Wade Hampton Bailey, III , Xinjian Lei , Daniel P. Spence
发明人： Sergei Vladimirovich Ivanov , Wade Hampton Bailey, III , Xinjian Lei , Daniel P. Spence
IPC分类号： C07F7/00 , C07F11/00 , C07F15/00 , C23C16/00
CPC分类号： C23C16/45553 , C07F7/003 , C23C16/405
摘要： Volatile metal amidate metal complexes are exemplified by bis(N-(tert-butyl)ethylamidate)bis(ethylmethylamido) titanium; (N-(tert-butyl)(tert-butyl)amidate)tris(ethylmethylamido) titanium; bis(N-(tert-butyl)(tert-butyl)amidate)bis(dimethylamido) titanium and (N-(tert-butyl)(tert-butyl)amidate)tris(dimethylamido) titanium. The term “volatile” refers to any precursor of this invention having vapor pressure above 0.5 torr at temperature less than 200° C. Metal-containing film depositions using these metal amidate ligands are also described.
摘要翻译：挥发性金属酰胺化物金属络合物的实例是双（N-（叔丁基）乙基氨基乙酸酯）双（乙基甲基氨基）钛; （N-（叔丁基）（叔丁基）酰胺酯）三（乙基甲基氨基）钛; 双（N-（叔丁基）（叔丁基）酰胺酯）双（二甲基氨基）钛和（N-（叔丁基）（叔丁基）酰胺酯）三（二甲基氨基）钛。术语“挥发性”是指在低于200℃的温度下蒸气压高于0.5托的本发明任何前体。还描述了使用这些金属酰胺化物配体的含金属膜沉积。

56. 发明申请

US20130078391A1 Complexes Of Imidazole Ligands 有权
标题翻译：咪唑配体配合物
公开(公告)号：US20130078391A1
公开(公告)日：2013-03-28
申请号：US13363918
申请日：2012-02-01
申请人： John Anthony Thomas Norman , Melanie K. Perez , Xinjian Lei , Daniel P. Spence , Sergie Vladimirovich Ivanov , Wade Hampton Bailey, III
发明人： John Anthony Thomas Norman , Melanie K. Perez , Xinjian Lei , Daniel P. Spence , Sergie Vladimirovich Ivanov , Wade Hampton Bailey, III
IPC分类号： C07F17/02
CPC分类号： C07F17/02 , C07F5/00 , C07F5/003 , C07F7/003 , C07F7/28 , C07F15/02 , C07F15/04 , C07F15/06 , C07F17/00
摘要： Metal imidazolate complexes are described where imidazoles ligands functionalized with bulky groups and their anionic counterpart, i.e., imidazolates are described. Compounds comprising one or more such polyalkylated imidazolate anions coordinated to a metal or more than one metal, selected from the group consisting of alkali metals, transition metals, lanthanide metals, actinide metals, main group metals, including the chalcogenides, are contemplated. Alternatively, multiple different imidazole anions, in addition to other different anions, can be coordinated to metals to make new complexes. The synthesis of novel compounds and their use to form thin metal containing films is also contemplated.
摘要翻译：描述了金属咪唑盐络合物，其中描述了用大体积基团官能化的咪唑配体及其阴离子配对物，即咪唑盐。包括一种或多种这样的多烷基化咪唑酸盐阴离子配位到金属或一种以上选自碱金属，过渡金属，镧系元素金属，锕系金属，主要金属（包括硫族化物）的金属中。或者，除了其它不同的阴离子之外，多种不同的咪唑阴离子可以与金属配位以制备新的络合物。还考虑了新化合物的合成及其用于形成含薄金属膜的用途。

57. 发明申请

US20120121806A1 Complexes Of Imidazole Ligands 有权
标题翻译：咪唑配体配合物
公开(公告)号：US20120121806A1
公开(公告)日：2012-05-17
申请号：US13152885
申请日：2011-06-03
申请人： John Anthony Thomas Norman , Melanie K. Perez , Xinjian Lei , Daniel P. Spence , Sergei Vladimirovich Ivanov , Wade Hampton Bailey, III
发明人： John Anthony Thomas Norman , Melanie K. Perez , Xinjian Lei , Daniel P. Spence , Sergei Vladimirovich Ivanov , Wade Hampton Bailey, III
IPC分类号： C07F7/28 , C07F13/00 , B05D3/12 , C23C16/50 , C23C16/44 , C07F15/02 , C07F5/00
CPC分类号： C07F17/02 , C07F5/00 , C07F5/003 , C07F7/003 , C07F7/28 , C07F15/02 , C07F15/04 , C07F15/06 , C07F17/00
摘要： Metal imidazolate complexes are described where imidazoles ligands functionalized with bulky groups and their anionic counterpart, i.e., imidazolates are described. Compounds comprising one or more such polyalkylated imidazolate anions coordinated to a metal or more than one metal, selected from the group consisting of alkali metals, transition metals, lanthanide metals, actinide metals, main group metals, including the chalcogenides, are contemplated. Alternatively, multiple different imidazole anions, in addition to other different anions, can be coordinated to metals to make new complexes. The synthesis of novel compounds and their use to form thin metal containing films is also contemplated.
摘要翻译：描述了金属咪唑盐络合物，其中描述了用大体积基团官能化的咪唑配体及其阴离子配对物，即咪唑盐。包括一种或多种这样的多烷基化咪唑酸盐阴离子配位到金属或一种以上选自碱金属，过渡金属，镧系元素金属，锕系金属，主要金属（包括硫族化物）的金属中。或者，除了其它不同的阴离子之外，多种不同的咪唑阴离子可以与金属配位以制备新的络合物。还考虑了新化合物的合成及其用于形成含薄金属膜的用途。

58. 发明申请

US20110135838A1 Liquid Precursor for Depositing Group 4 Metal Containing Films 有权
标题翻译：用于沉积第4组含金属膜的液体前体
公开(公告)号：US20110135838A1
公开(公告)日：2011-06-09
申请号：US12950352
申请日：2010-11-19
申请人： Xinjian Lei , John Anthony Thomas Norman , Daniel P. Spence
发明人： Xinjian Lei , John Anthony Thomas Norman , Daniel P. Spence
IPC分类号： C23C16/30 , C07F7/28 , C23C16/44 , C23C16/50 , C23C16/48 , C23C16/56
CPC分类号： C07F17/00 , C07F7/003
摘要： The present invention is related to a family of liquid group 4 precursors represented by the formula: (pyr*)M(OR1)(OR2)(OR3) wherein pyr* is an alkyl substituted pyrrolyl, wherein M is group 4 metals include Ti, Zr, and Hf; wherein R1-3 can be same or different and selected from group consisting of linear or branched C1-6 alkyls; preferably C1-3 alkyls; R4 is selected from the group consisting of C1-6 alkyls, preferably branched C3-5 alkyls substituted at 2, 5 positions to prevent the pyrrolyl coordinated to the metal center in η1 fashion; n=2, 3, 4. Most preferably the invention is directed to (2,5-di-tert-butylpyrrolyl)(tris(ethoxy)titanium, (2,5-di-tert-amylpyrrolyl)(tris(ethoxy)titanium, and (2,5-di-tert-amylpyrrolyl)(tris(iso-propoxy)titanium. The invention is also directed to (cyclopentadienyl)(2,5-di-methylpyrrolyl)(bis(ethoxy))titanium. Deposition methods using these compounds are also contemplated.
摘要翻译：本发明涉及一种由式（pyr *）M（OR1）（OR2）（OR3）表示的液体组4前体，其中pyr *是烷基取代的吡咯基，其中M是第4族金属包括Ti， Zr和Hf; 其中R1-3可以相同或不同，并且选自直链或支链C 1-6烷基; 优选C 1-3烷基; R 4选自C 1-6烷基，优选在2,5位取代的支链C 3-5烷基，以防止以“1”方式与金属中心配位的吡咯基; 最优选本发明涉及（2,5-二叔丁基吡咯基）（三（乙氧基）钛，（2,5-二叔戊基吡咯基）（三（乙氧基）钛本发明还涉及（环戊二烯基）（2,5-二甲基吡咯基）（双（乙氧基））钛。沉积方法也考虑使用这些化合物。

59. 发明授权

US07754906B2 Ti, Ta, Hf, Zr and related metal silicon amides for ALD/CVD of metal-silicon nitrides, oxides or oxynitrides 有权
标题翻译： Ti，Ta，Hf，Zr和金属硅氮化物的ALD / CVD的相关金属硅酰胺，氧化物或氮氧化物
公开(公告)号：US07754906B2
公开(公告)日：2010-07-13
申请号：US11522768
申请日：2006-09-18
申请人： John Anthony Thomas Norman , Xinjian Lei
发明人： John Anthony Thomas Norman , Xinjian Lei
IPC分类号： C07F7/18
CPC分类号： C07F11/005 , C07F7/003 , C07F9/005
摘要： An organometallic complex represented by the structure: wherein M is a metal selected from Group 4 of the Periodic Table of the Elements and R1-4 can be same or different selected from the group consisting of dialkylamide, difluoralkylamide, hydrogen, alkyl, alkoxy, fluoroalkyl and alkoxy, cycloaliphatic, and aryl with the additional provision that when R1 and R2 are dialkylamide, difluoralkylamide, alkoxy, fluoroalkyl and alkoxy, they can be connected to form a ring. Related compounds are also disclosed. CVD and ALD deposition processes using the complexes are also included.
摘要翻译：由以下结构表示的有机金属络合物：其中M是选自元素周期表第4族的金属和R1-4可以相同或不同，选自二烷基酰胺，二氟烷基酰胺，氢，烷基，烷氧基，氟代烷基和烷氧基，脂环族和芳基，另外条件是当R1和R2是二烷基酰胺，二氟烷基酰胺，烷氧基，氟代烷基和烷氧基时，它们可以连接形成环。还公开了相关化合物。还包括使用复合物的CVD和ALD沉积方法。

60. 发明申请

US20100143607A1 Precursors for Depositing Group 4 Metal-Containing Films 有权
标题翻译：用于沉积第4组含金属膜的前体
公开(公告)号：US20100143607A1
公开(公告)日：2010-06-10
申请号：US12629416
申请日：2009-12-02
申请人： Xinjian Lei , Daniel P. Spence , Moo-Sung Kim , Iain Buchanan , Laura M. Matz , Sergei Vladimirovich Ivanov
发明人： Xinjian Lei , Daniel P. Spence , Moo-Sung Kim , Iain Buchanan , Laura M. Matz , Sergei Vladimirovich Ivanov
IPC分类号： C23C16/50 , C23C16/44 , C23C16/22
CPC分类号： C23C16/455 , C07F7/003 , C23C16/18 , C23C16/40
摘要： Described herein are Group 4 metal-containing precursors, compositions comprising Group 4 metal-containing precursors, and deposition processes for fabricating conformal metal containing films on substrates. In one aspect, the Group 4 metal-containing precursors are represented by the following formula I: wherein M comprises a metal chosen from Ti, Zr, and Hf; R and R1 are each independently selected from an alkyl group comprising from 1 to 10 carbon atoms; R2 is an alkyl group comprising from 1 to 10 carbon atoms; R3 is chosen from hydrogen or an alkyl group comprising from 1 to 3 carbon atoms; R4 is an alkyl group comprising from 1 to 6 carbon atoms and wherein R2 and R4 are different alkyl groups. Also described herein are methods for making Group 4 metal-containing precursors and methods for depositing films using the Group 4 metal-containing precursors.
摘要翻译：本文描述的是含有第4族金属的前体，包含第4族金属的前体的组合物，以及用于在基材上制造含适形金属的膜的沉积工艺。一方面，含4族金属的前体由下式I表示：其中M包括选自Ti，Zr和Hf的金属; R和R 1各自独立地选自包含1至10个碳原子的烷基; R 2是包含1至10个碳原子的烷基; R3选自氢或包含1至3个碳原子的烷基; R4是包含1至6个碳原子的烷基，其中R2和R4是不同的烷基。本文还描述了制备含有第4族金属的前体的方法以及使用含有第4族金属的前体沉积膜的方法。

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