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    • 55. 发明申请
    • SOLID-STATE IMAGING DEVICE AND IMAGING APPARATUS
    • 固态成像装置和成像装置
    • US20090009635A1
    • 2009-01-08
    • US12115949
    • 2008-05-06
    • Noriya MaedaHideo NakayamaKenichi OkumuraNozomu Takatori
    • Noriya MaedaHideo NakayamaKenichi OkumuraNozomu Takatori
    • H04N5/217
    • H04N5/374H04N5/351H04N5/3598H04N5/378
    • A solid-state imaging device includes a pixel array unit configured by arranging plural unit pixels including charge generating units and output transistors that output processing object signals corresponding to charges generated by the charge generating units, an imaging-condition determining unit that determines whether a large light-amount imaging condition, when an amount of light larger than that of light representing a saturation level is made incident on the charge generating units, is satisfied, and a control unit that performs control, on condition that the imaging-condition determining unit determines that the large light-amount imaging condition is satisfied, to correct an output signal based on processing object signals outputted from the unit pixels such that a harmful effect due to the large light-amount imaging condition is suppressed in the output signal.
    • 一种固态成像装置,包括:像素阵列单元,配置为包括电荷产生单元的多个单位像素和输出对应于由所述电荷产生单元生成的电荷的处理对象信号的输出晶体管;成像条件确定单元, 当满足在电荷产生单元上入射大于表示饱和电平的光的光量大的光量成像条件时,以及在成像条件确定单元确定的条件下执行控制的控制单元 满足大的光量成像条件,以基于从单位像素输出的处理对象信号来校正输出信号,使得在输出信号中抑制了由于大量光成像条件引起的有害影响。
    • 58. 发明授权
    • Surface emitting semiconductor laser, and method and apparatus for fabricating the same
    • 表面发射半导体激光器及其制造方法和装置
    • US07157298B2
    • 2007-01-02
    • US10384675
    • 2003-03-11
    • Hideo NakayamaAkira Sakamoto
    • Hideo NakayamaAkira Sakamoto
    • H01L21/00
    • H01S5/18311B82Y20/00H01S5/0042H01S5/18338H01S5/1835H01S5/18358H01S5/3432H01S2301/176
    • A method of fabricating a surface emitting semiconductor laser includes the following steps. A first laminate of semiconductor layers and a second laminate of semiconductor layers are formed on a substrate. The first laminate includes a first reflection mirror layer of a first conduction type, an active region, a III-V semiconductor layer containing Al, and a second reflection mirror layer of a second conduction type, the second laminate being used for monitoring and having an oxidizable region. The first and second laminates are etched so as to form mesas on the substrate in which side surface of the III-V semiconductor layer contained in the first laminate is exposed. Oxidization of the III-V semiconductor layer from the side surface is started at an oxidization rate. During oxidization, a reflectance of the second laminate for monitoring or its variation is monitored, and oxidization of the III-V semiconductor layer is terminated after a constant time from a time when the reflectance or its variation reaches a corresponding given value.
    • 制造表面发射半导体激光器的方法包括以下步骤。 半导体层的第一层叠体和半导体层的第二层叠体形成在基板上。 第一层压体包括第一导电类型的第一反射镜层,有源区,含有Al的III-V半导体层和第二导电类型的第二反射镜层,第二层压板用于监测并具有 可氧化区域。 对第一和​​第二层压体进行蚀刻,以在第一层压体中包含的III-V半导体层的侧表面露出的基板上形成台面。 从侧面氧化III-V半导体层以氧化速率开始。 在氧化期间,监测用于监测或其变化的第二层压体的反射率,并且在从反射率或其变化达到相应给定值的时间起经过恒定时间之后,III-V半导体层的氧化终止。