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2. 外观设计

JPD1582833S Finger cap of artificial hand 失效
公开(公告)号：JPD1582833S
公开(公告)日：2017-07-31
申请号：JPD2016501890
申请人： DAIYA INDUSTRY CO., LTD. , MASAHIRO YOSHIKAWA
设计人： Masahiro Yoshikawa Masao Matsuo Kazunori Ogawa

3. 外观设计

JPD1582832S Artificial hand 失效
公开(公告)号：JPD1582832S
公开(公告)日：2017-07-31
申请号：JPD2016501889
申请人： DAIYA INDUSTRY CO., LTD. , MASAHIRO YOSHIKAWA
设计人： Masahiro Yoshikawa Masao Matsuo Kazunori Ogawa

4. 外观设计

USD851251S1 Finger cap of an artificial hand 有权
公开(公告)号：USD851251S1
公开(公告)日：2019-06-11
申请号：US35502929
申请日：2016-11-07
申请人： DAIYA INDUSTRY CO., LTD. , Masahiro Yoshikawa
设计人： Masahiro Yoshikawa , Masao Matsuo , Kazunori Ogawa
摘要： 2. Finger cap of artificial hand.
2.1: Right
2.2: Left
2.3: Front
2.4: Back
2.5: Top
2.6: Bottom
2.7: Vertical end view
2.8: Horizontal end view at base end portion
2.9: Horizontal end view at middle portion
2.10: Horizontal end view at tip portion
2.11: Perspective
The product shown in figs. 2.1 to 2.11 is a finger cap of an artificial hand; the finger cap is to be mounted on a movable finger of an artificial hand.

5. 发明授权

US08659020B2 Epitaxial silicon wafer and method for manufacturing same 有权
标题翻译：外延硅晶片及其制造方法
公开(公告)号：US08659020B2
公开(公告)日：2014-02-25
申请号：US13378562
申请日：2010-05-28
申请人： Tadashi Kawashima , Masahiro Yoshikawa , Akira Inoue , Yoshiya Yoshida
发明人： Tadashi Kawashima , Masahiro Yoshikawa , Akira Inoue , Yoshiya Yoshida
IPC分类号： H01L29/04 , H01L21/336
CPC分类号： H01L21/02532 , H01L21/02381 , H01L21/0262 , H01L21/02658 , H01L21/02664 , H01L21/3221
摘要： It is an object to provide an epitaxial silicon wafer that is provided with an excellent gettering ability in which a polysilicon layer is formed on the rear face side of a silicon crystal substrate into which phosphorus (P) and germanium (Ge) have been doped. A silicon epitaxial layer is grown by a CVD method on the surface of a silicon crystal substrate into which phosphorus and germanium have been doped at a high concentration. After that, a PBS forming step for growing a polysilicon layer is executed on the rear face side of a silicon crystal substrate. By the above steps, the number of LPDs (caused by an SF) that occur on the surface of the epitaxial silicon wafer due to the SF can be greatly reduced.
摘要翻译：本发明的目的是提供一种在掺杂有磷（P）和锗（Ge）的硅晶体衬底的背面侧上形成多晶硅层的优异的吸气能力的外延硅晶片。通过CVD法在硅晶体衬底的表面上以高浓度掺杂有磷和锗的方式生长硅外延层。之后，在硅晶体基板的背面进行用于生长多晶硅层的PBS形成工序。通过上述步骤，可以大大减少由于SF而在外延硅晶片的表面上发生的LPD（由SF引起）的数量。

6. 发明申请

US20130186993A1 JET MILL 有权
标题翻译：喷气机
公开(公告)号：US20130186993A1
公开(公告)日：2013-07-25
申请号：US13812638
申请日：2011-07-28
申请人： Masahiro Yoshikawa , Tomoyuki Chiba , Takashi Shibata
发明人： Masahiro Yoshikawa , Tomoyuki Chiba , Takashi Shibata
IPC分类号： B02C19/06
CPC分类号： B02C19/06 , B02C19/066 , B02C19/068 , B02C23/12 , B07B7/083 , B07B7/086
摘要： Disposed is a jet mill that has a cylindrical pulverization chamber (10) and a classification chamber (6) that connects to the pulverization chamber (10). A fine-powder discharge port (4a) and a classification rotor (7) are provided in the classification chamber (6). A feedstock supply port (5) and at least one gas emission nozzle (11) are provided in the pulverization chamber (10). The shape of the classification chamber (6) is a cone that starts on the inner wall of the pulverization chamber (10), and is angled towards the classification rotor (7). This configuration gives the jet mill high efficiency of pulverization and reduces the amount of powders left in the chamber when the jet mill has finished running.
摘要翻译：设置有具有连接到粉碎室（10）的圆柱形粉碎室（10）和分级室（6）的喷射式粉碎机。在分级室（6）中设置有细粉末排出口（4a）和分级转子（7）。原料供给口（5）和至少一个排气喷嘴（11）设置在粉碎室（10）中。分级室（6）的形状是从粉碎室（10）的内壁开始朝向分级转子（7）倾斜的锥体。这种配置给喷射磨机提供了高效率的粉碎，并且当喷射磨机运行完毕时，减少了腔室中留下的粉末的量。

7. 发明申请

US20100226656A1 OPTICAL WAVEGUIDE, LIGHT TRANSMISSION APPARATUS, AND ELECTRONIC EQUIPMENT 审中-公开
标题翻译：光波导，光传输设备和电子设备
公开(公告)号：US20100226656A1
公开(公告)日：2010-09-09
申请号：US12540572
申请日：2009-08-13
申请人： Takehiro Niitsu , Akira Sakamoto , Masahiro Yoshikawa
发明人： Takehiro Niitsu , Akira Sakamoto , Masahiro Yoshikawa
IPC分类号： H04B10/12 , G02B6/26 , H04B10/00
CPC分类号： G02B6/4214 , G02B6/43 , G02B2006/12195
摘要： An optical waveguide includes a first waveguide region and a second waveguide region. The first waveguide region includes a first core, a first clad provided around the first core, and a light reflecting surface. The light reflecting surface has at least one function of (i) reflecting light from a longitudinal direction of the first core toward a direction crossing the longitudinal direction and (ii) reflecting light from the crossing direction toward the longitudinal direction of the first core. The second waveguide region continues from the first waveguide region. The second waveguide region that includes a second core, and a second clad provided around the second core. The second core of the second waveguide region is thinner than the first core of the first waveguide region. A total thickness of the second core and the second clad is smaller than that of the first core and the first clad.
摘要翻译：光波导包括第一波导区域和第二波导区域。第一波导区域包括第一芯，围绕第一芯设置的第一包层和光反射表面。光反射面至少具有以下功能：（i）将反射来自第一芯的纵向的光朝向与长度方向交叉的方向反射，以及（ii）将来自交叉方向的光朝向第一芯的长度方向反射。第二波导区域从第一波导区域继续。包括第二芯的第二波导区域和围绕第二核心设置的第二覆层。第二波导区域的第二核心比第一波导区域的第一核心薄。第二芯和第二包层的总厚度小于第一芯和第一包层的总厚度。

8. 发明授权

US07751459B2 Vertical-cavity surface-emitting laser, module, optical transmission device, free space optical communication device, optical transmission system, and free space optical communication system 有权
标题翻译：垂直腔表面发射激光器，模块，光传输装置，自由空间光通信装置，光传输系统和自由空间光通信系统
公开(公告)号：US07751459B2
公开(公告)日：2010-07-06
申请号：US12330118
申请日：2008-12-08
申请人： Masahiro Yoshikawa , Masateru Yamamoto , Takashi Kondo
发明人： Masahiro Yoshikawa , Masateru Yamamoto , Takashi Kondo
IPC分类号： H01S5/00
CPC分类号： H01S5/18311 , B82Y20/00 , H01S5/005 , H01S5/02284 , H01S5/02288 , H01S5/0425 , H01S5/06226 , H01S5/18361 , H01S5/305 , H01S5/3054 , H01S5/3077 , H01S5/3432
摘要： Provided is a VCSEL that includes: a first semiconductor multilayer film reflective mirror of a first conductivity type formed on a substrate; an active region formed thereon; a current confining layer of a second conductivity type formed thereon; a second semiconductor multilayer film reflective mirror of the second conductivity type formed thereon; and a third semiconductor multilayer film reflective mirror of the second conductivity type formed thereon. The reflective mirrors include a pair of a high refractive index layer and a low refractive index layer. The impurity concentration of the second reflective mirror is higher than that of the third reflective mirror. The band gap energy of the high refractive index layer in the second reflective mirror is greater than the energy of the wavelength of a resonator formed of the first reflective mirror, the active region, the current confining layer, the second reflective mirror, and the third reflective mirror.
摘要翻译：提供一种VCSEL，其包括：形成在基板上的第一导电类型的第一半导体多层膜反射镜; 形成在其上的有源区; 形成在其上的第二导电类型的电流限制层; 在其上形成第二导电类型的第二半导体多层膜反射镜; 以及形成在其上的第二导电类型的第三半导体多层膜反射镜。反射镜包括一对高折射率层和低折射率层。第二反射镜的杂质浓度高于第三反射镜的杂质浓度。第二反射镜中的高折射率层的带隙能量大于由第一反射镜，有源区，电流限制层，第二反射镜和第三反射镜形成的谐振器的波长的能量反光镜。

9. 发明授权

US07596163B2 VCSEL, manufacturing method thereof, module, light sending device, optical spatial transmission device, light sending system, and optical spatial transmission system 有权
标题翻译： VCSEL及其制造方法，模块，发光装置，光学空间传输装置，发光系统和光学空间传输系统
公开(公告)号：US07596163B2
公开(公告)日：2009-09-29
申请号：US11803468
申请日：2007-05-15
申请人： Masahiro Yoshikawa , Masateru Yamamoto , Takashi Kondo
发明人： Masahiro Yoshikawa , Masateru Yamamoto , Takashi Kondo
IPC分类号： H01S5/00
CPC分类号： H01S5/18311 , B82Y20/00 , H01S5/02284 , H01S5/02288 , H01S5/0425 , H01S5/18375 , H01S5/18377 , H01S5/18383 , H01S5/18394 , H01S5/34313 , H01S2301/166
摘要： A VCSEL includes a substrate, a first semiconductor multilayer of a first conductivity-type, an active layer, a second semiconductor multilayer of a second conductivity-type, a contact layer, each of the layers stacked on the substrate. The second semiconductor multilayer constitutes a resonator together with the active layer and the first semiconductor multilayer. A metal layer is formed on the contact layer. The metal layer includes an opening portion that defines a region that emits laser light. When oscillation wavelength of the laser light is λ, optical thickness T of the contact layer and a top layer of the second semiconductor multilayer that contacts with the contact layer is smaller than λ/4.
摘要翻译： VCSEL包括基板，第一导电类型的第一半导体多层，有源层，第二导电类型的第二半导体层，接触层，层叠在基板上。第二半导体多层与有源层和第一半导体多层构成谐振器。在接触层上形成金属层。金属层包括限定发射激光的区域的开口部分。当激光的振荡波长为λ时，接触层的光学厚度T和与接触层接触的第二半导体多层的顶层小于λ/ 4。

10. 发明授权

US6090301A Method for fabricating bump forming plate member 失效
标题翻译：凸块形成板构件的制造方法
公开(公告)号：US6090301A
公开(公告)日：2000-07-18
申请号：US848717
申请日：1997-05-19
申请人： Masataka Mizukoshi , Ichiro Yamaguchi , Masahiro Yoshikawa , Koki Otake , Junichi Kasai
发明人： Masataka Mizukoshi , Ichiro Yamaguchi , Masahiro Yoshikawa , Koki Otake , Junichi Kasai
IPC分类号： H01L21/48 , H01L21/60 , H01L21/68 , H05K3/34 , H01L21/302
CPC分类号： H05K3/3484 , H01L21/4853 , H01L21/6835 , H01L24/11 , H01L2224/05568 , H01L2224/05573 , H01L2224/11003 , H01L2224/11334 , H01L2224/13099 , H01L2924/00014 , H01L2924/01004 , H01L2924/01006 , H01L2924/01033 , H01L2924/01072 , H01L2924/01078 , H01L2924/014 , H01L2924/10253 , H01L2924/14 , H05K2201/10734 , H05K2203/0113 , H05K2203/0338 , H05K2203/043 , H05K3/3478
摘要： A method for fabricating a bump forming plate member by which bumps can be formed on an electronic component. A mask is formed on a surface of a crystalline plate, and the crystalline plate is subjected to anisotropic etching to form a plurality of grooves. The crystalline plate is also subjected to isotropic etching to deepen the grooves. The method can further includes additional anisotropic and isotropic etchings. Also, a method for fabricating a metallic bump forming plate member is disclosed. This method uses the above described crystalline plate having the grooves, and includes fabrication of a replica using the crystalline plate as an original, and fabrication of a metallic bump forming plate member using the replica as an original.
摘要翻译：一种用于制造凸块形成板构件的方法，通过该凸块形成板构件可以在电子部件上形成凸块。在结晶板的表面上形成掩模，对各结晶板进行各向异性蚀刻，形成多个槽。晶片也进行各向同性蚀刻以加深槽。该方法还可以包括额外的各向异性和各向同性蚀刻。此外，公开了一种用于制造金属凸块形成板构件的方法。该方法使用上述具有凹槽的晶片，并且包括使用原版的晶体板制造复制品，以及使用该复制品作为原件制造金属凸块形成板构件。

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