会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 51. 发明申请
    • HYDRODYNAMIC BEARING DEVICE AND DISK ROTATING APPARATUS
    • 水力轴承装置和盘旋转装置
    • US20080304776A1
    • 2008-12-11
    • US12188545
    • 2008-08-08
    • Takafumi ASADAHiroaki SaitoTakao YoshitsuguKeigo KusakaHiroyuki KiriyamaDaisuke Ito
    • Takafumi ASADAHiroaki SaitoTakao YoshitsuguKeigo KusakaHiroyuki KiriyamaDaisuke Ito
    • F16C32/06G11B17/02
    • F16C17/107F16C33/103F16C33/107F16C2370/12
    • In a hydrodynamic bearing device in which a radial bearing face having a dynamic pressure generating groove on a shaft or an inner periphery of a sleeve is provided and a clearance between the shaft and the sleeve is filled with lubricant, an annular depression is provided on one end face of the sleeve adjacent to a rotor hub and a cover plate for covering the depression is attached to the sleeve so as to define a reservoir for the lubricant or air for the purpose of preventing such a risk that absence of an oil film occurs in clearances of a bearing of the hydrodynamic bearing device due to outflow of oil upon forcing of the oil by air received into the bearing. A step portion is provided on the other end face of the sleeve such that the step portion and the reservoir are communicated with each other by a communication hole. During operation of the hydrodynamic bearing device, air in the hydrodynamic bearing device reaches the reservoir via the communication hole so as to be discharged from the reservoir.
    • 在一种流体动力轴承装置中,其中设置有在轴上的动压产生槽或套筒的内周上的径向支承面,并且轴与套筒之间的间隙充满润滑剂,环形凹部设置在一个 与转子轮毂相邻的套筒的端面和用于覆盖凹部的盖板附接到套筒上,以便限定用于润滑剂或空气的储存器,以便防止在油膜中不存在油膜的风险 由于在接收到轴承中的空气迫使油被油流出时,流体动力轴承装置的轴承的间隙。 台阶部设置在套筒的另一端面上,使得台阶部分和储存器通过连通孔相互连通。 在流体动力轴承装置的操作期间,流体动力轴承装置中的空气经由连通孔到达储存器,以便从储存器排出。
    • 52. 发明申请
    • HYDRODYNAMIC BEARING, AND HYDRODYNAMIC BEARING-TYPE ROTARY DEVICE AND RECORDING AND REPRODUCING APPARATUS EQUIPPED WITH SAME
    • 水动力轴承和水动力轴承类型旋转装置及其配备的记录和再生装置
    • US20080212907A1
    • 2008-09-04
    • US12031199
    • 2008-02-14
    • Takafumi AsadaHiroaki SaitoDaisuke Ito
    • Takafumi AsadaHiroaki SaitoDaisuke Ito
    • F16C32/06
    • F16C33/102F16C17/107F16C33/107F16C2370/12
    • The angular stiffness of a bearing is kept high, and at the same time air inside the bearing is discharged smoothly, without accumulating, which prevents oil film separation on the bearing. With the present invention, a communicating hole is provided, the hole and a radial hydrodynamic groove constitute a circulation path for a lubricant, there is a first thrust bearing face in contact with the circulation path, there is a first hydrodynamic groove on the face, this groove is a herringbone groove with a pump-in pattern, and no low-pressure part is generated in the thrust bearing, so even if the bearing undergoes a pressure change, there is no risk that the air accumulated in a low-pressure part will expand and cause oil film separation on the bearing face. Also, the bubbles are smoothly discharged by circulation of the lubricant in the asymmetrical radial hydrodynamic groove, and there is a pressure distribution such that the pressure generated at the face during bearing rotation is sufficiently high at the outer peripheral portion of the groove pattern, and angular stiffness is high.
    • 轴承的角刚度保持较高,同时轴承内的空气平稳排出,不会积聚,防止轴承上的油膜分离。 在本发明中,设置有连通孔,孔和径向流体动力槽构成润滑剂的循环路径,存在与循环路径接触的第一止推轴承面,面上存在第一流体动力槽, 该凹槽是具有泵入图案的人字形槽,并且在推力轴承中不产生低压部分,因此即使轴承经受压力变化,也不存在积聚在低压部分中的空气的风险 会膨胀并导致轴承面上的油膜分离。 此外,气泡通过不对称径向流体动力槽中的润滑剂的循环而平滑地排出,并且存在压力分布,使得在轴承旋转期间在面处产生的压力在凹槽图案的外周部分足够高,并且 角刚度高。
    • 53. 发明申请
    • Hydrodynamic bearing rotary device and information apparatus
    • 流体动力轴承旋转装置和信息装置
    • US20070230840A1
    • 2007-10-04
    • US11730144
    • 2007-03-29
    • Takafumi AsadaHiroaki SaitoDaisuke ItouKeigo KusakaHiroyuki Kiriyama
    • Takafumi AsadaHiroaki SaitoDaisuke ItouKeigo KusakaHiroyuki Kiriyama
    • F16C32/06
    • F16C33/102F16C17/107F16C33/107F16C2370/12
    • A hydrodynamic bearing rotary device which can reduce rotation friction, and recording and reproducing apparatus including the same are provided. In the hydrodynamic bearing rotary device such as hard disc devices, a rotary shaft having a hub on one end is provided in a bearing of a sleeve so as to be rotatable. Thrust hydrodynamic grooves are provided on the other end surface of the rotary shaft, to form a thrust bearing with the thrust plate. A communication path is provided in the sleeve. The second gap between the hub and the sleeve end surface is used as a flow channel and is connected to the communication path. In this way, the rotation friction torque of the thrust bearing can be made sufficiently small, and internal pressure in bonded portions of the rotary shaft or the bottom plate can be suppressed. Thus, the oil can be prevented from oozing out from a small space of the bonded surfaces. Furthermore, the hydrodynamic bearing can be made thin. These effects can be combined to realize an optimal hydrodynamic bearing rotary device.
    • 提供了能够降低旋转摩擦力的流体动力轴承旋转装置,以及包括其的记录和再现装置。 在诸如硬盘装置的流体动力轴承旋转装置中,一个具有一端的轮毂的旋转轴设置在套筒的轴承中以便可旋转。 在旋转轴的另一端面上设置有推力液压动力槽,与止推板形成推力轴承。 在套筒中提供通信路径。 轮毂和套筒端面之间的第二间隙用作流动通道并连接到连通路径。 以这种方式,推力轴承的旋转摩擦转矩可以变得足够小,并且可以抑制旋转轴或底板的接合部分的内部压力。 因此,可以防止油从接合表面的小空间渗出。 此外,流体动力轴承可以变薄。 这些效果可以结合起来,实现最佳的流体动力轴承旋转装置。
    • 56. 发明申请
    • Semiconductor device and a method of fabricating the same
    • 半导体装置及其制造方法
    • US20050266642A1
    • 2005-12-01
    • US11194446
    • 2005-08-02
    • Hirotoshi KuboMasanao KitagawaMasahito OndaHiroaki SaitoEiichiroh Kuwako
    • Hirotoshi KuboMasanao KitagawaMasahito OndaHiroaki SaitoEiichiroh Kuwako
    • H01L21/336H01L29/10H01L29/423H01L29/78
    • H01L29/7802H01L29/1095H01L29/41766H01L29/4236H01L29/66719H01L29/66727H01L29/66734H01L29/7813
    • A power MOSFET comprises: a semiconductor substrate 21 of a first conduction type; a drain layer 22 of the first conduction type and formed on a surface layer of the substrate; a gate insulating film 25 formed in a partial region on the drain layer 22; a gate electrode 26 formed on the gate insulating film 25; an insulating film 27 formed on the gate electrode; a side wall insulator 28 formed on side walls of the gate insulating film 25, the gate electrode 26, and the insulating film 27; a recess formed on the drain layer 22 and in a region other than a region where the gate electrode 25 and the side wall insulator 28 are formed; a channel layer 23 of a second conduction type opposite to the first conduction type and formed in a range from the region where the recess is formed to a vicinity of the region where the gate electrode 26 is formed; a source region layer 24 of the one conduction type and formed on the channel layer 23 outside the recess; and a wiring layer 29 formed to cover the channel layer 23 which is exposed through the recess, the side wall insulator 28, and the insulating film.
    • 功率MOSFET包括:第一导电类型的半导体衬底21; 第一导电类型的漏极层22,并形成在衬底的表面层上; 形成在漏极层22上的部分区域中的栅极绝缘膜25; 形成在栅极绝缘膜25上的栅电极26; 形成在栅电极上的绝缘膜27; 形成在栅极绝缘膜25,栅电极26和绝缘膜27的侧壁上的侧壁绝缘体28; 在漏极层22上形成的凹部和形成有栅电极25和侧壁绝缘体28的区域以外的区域; 与第一导电型相反的第二导电类型的沟道层23形成在从形成凹部的区域到形成栅电极26的区域附近的范围内; 一个导电类型的源极区24,并形成在凹槽外部的沟道层23上; 以及形成为覆盖通过凹部暴露的沟道层23,侧壁绝缘体28和绝缘膜的布线层29。
    • 57. 发明申请
    • Semiconductor device
    • 半导体器件
    • US20050184406A1
    • 2005-08-25
    • US11061730
    • 2005-02-22
    • Tetsuya OkadaHiroaki Saito
    • Tetsuya OkadaHiroaki Saito
    • H01L29/872H01L29/47H01L29/861H01L31/062
    • H01L29/872H01L29/861
    • Conventionally, VF and IR characteristics of a Schottky barrier diode are in a tradeoff relation and there is a problem in that an increase in a leak current is unavoidable in order to realize a reduction in VF. To solve the problem, p type semiconductor regions of a pillar shape reaching an n+ type semiconductor substrate are provided in an n− type semiconductor layer. When a reverse voltage is applied, a depletion layer expanding in a substrate horizontal direction from the p type semiconductor regions fills the n− type semiconductor layer. Thus, it is possible to prevent the leak current generated on a Schottky junction interface from leaking to a cathode side. Since an impurity concentration of the n− type semiconductor layer can be increased to a degree at which the depletion layer expanding from the p type semiconductor regions adjacent to each other can be pinched off, it is possible to realize a reduction in VF and it is possible to secure a predetermined breakdown voltage if only the depletion layer is pinched off.
    • 通常,肖特基势垒二极管的VF和IR特性是权衡关系的,并且存在为了实现VF的降低而不可避免地增加泄漏电流的问题。 为了解决这个问题,在n型半导体层中设置了到n +型半导体衬底的柱状的p型半导体区域。 当施加反向电压时,从p型半导体区域沿衬底水平方向膨胀的耗尽层填充n型半导体层。 因此,可以防止在肖特基结界面上产生的泄漏电流泄漏到阴极侧。 由于可以将n型半导体层的杂质浓度提高到从相邻的p型半导体区域扩大的耗尽层被夹除的程度,所以可以实现VF的降低, 如果只有耗尽层被夹掉,则可以确保预定的击穿电压。