会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 56. 发明授权
    • Disk drive device and method of press-fitting with reduced hub deformation
    • 磁盘驱动装置和压配合方法减少轮毂变形
    • US08564901B2
    • 2013-10-22
    • US12616093
    • 2009-11-10
    • Hiroshi SaitoKazuhiro Matsuo
    • Hiroshi SaitoKazuhiro Matsuo
    • G11B17/02
    • G11B17/028
    • In the brushless motor, a hub has a cylindrical separating wall in between a yoke and two magnetic recording disks. The yoke is affixed to the inner surface of the separating wall of the hub using both a press-fit and adhesion. A first convex portion and a second convex portion are formed on the inner surface of the separating wall, and the yoke is pressed against these convex portions in the case where the yoke is press-fit. The first convex portion and the second convex portion are formed in a ring shape around the rotational axis of the motor. The diameter of the first convex portion is less than the diameter of the second convex portion.
    • 在无刷电动机中,毂在磁轭和两个磁记录盘之间具有圆柱形分隔壁。 使用压配合和粘合将轭固定到轮毂的分隔壁的内表面。 在分隔壁的内表面上形成有第一凸起部分和第二凸起部分,并且在压配磁轭的情况下,磁轭被压靠在这些凸部上。 第一凸部和第二凸部围绕电机的旋转轴线形成为环状。 第一凸部的直径小于第二凸部的直径。
    • 57. 发明授权
    • Semiconductor device having multilayered interelectrode insulating film
    • 具有多层电极间绝缘膜的半导体装置
    • US08471319B2
    • 2013-06-25
    • US13237486
    • 2011-09-20
    • Kazuhiro MatsuoMasayuki TanakaHirofumi Iikawa
    • Kazuhiro MatsuoMasayuki TanakaHirofumi Iikawa
    • H01L29/792H01L21/28
    • H01L27/11521H01L21/28273H01L29/513H01L29/7883
    • A semiconductor device is disclosed. The semiconductor device includes a semiconductor substrate; a gate insulating film formed above the semiconductor substrate; a charge storage layer formed above the gate insulating film; a multilayered interelectrode insulating film formed in a first region above an upper surface portion of the element isolation insulating film, a second region above a sidewall portion of the charge storage layer and a third region above an upper surface portion of the charge storage layer, the interelectrode insulating film including a stack of an upper silicon oxide film, a middle silicon nitride film, and a lower silicon oxide film; a control gate electrode formed above the interelectrode insulating film; wherein the middle silicon nitride film is thinner in the third region than in the second region and the upper silicon oxide film is thicker in the third region than in the second region.
    • 公开了一种半导体器件。 半导体器件包括半导体衬底; 形成在所述半导体衬底上的栅极绝缘膜; 形成在栅极绝缘膜上方的电荷存储层; 形成在元件隔离绝缘膜的上表面部分上方的第一区域中的多层电极间绝缘膜,电荷存储层的侧壁部分上方的第二区域和电荷存储层的上表面部分上方的第三区域, 电极间绝缘膜,其包括上氧化硅膜,中间氮化硅膜和下氧化硅膜的堆叠; 形成在电极间绝缘膜之上的控制栅电极; 其中中间氮化硅膜在第三区域比第二区域薄,上部氧化硅膜在第三区域比第二区域厚。
    • 60. 发明授权
    • Method of manufacturing a semiconductor device
    • 制造半导体器件的方法
    • US08304352B2
    • 2012-11-06
    • US13051031
    • 2011-03-18
    • Masayuki TanakaKazuhiro MatsuoYoshio Ozawa
    • Masayuki TanakaKazuhiro MatsuoYoshio Ozawa
    • H01L21/31H01L21/469
    • H01L21/28282H01L27/11568H01L27/11582
    • According to an embodiment, there is provided a method of manufacturing a semiconductor device, including forming a nitride film by nitriding a surface of an underlying region having a semiconductor region containing silicon as a main component and an insulating region containing silicon and oxygen as a main component and adjacent to the semiconductor region, carrying out oxidation with respect to the nitride film to convert a portion of the nitride film which is formed on the insulating region into an oxide film and to leave a portion of the nitride film which is formed on the semiconductor region as at least part of a charge storage insulating film, forming a block insulating film on the charge storage insulating film, and forming a gate electrode film on the block insulating film.
    • 根据一个实施例,提供一种制造半导体器件的方法,包括通过氮化作为主要成分的含有硅的半导体区域的下面的区域的表面和以硅和氧为主要的绝缘区域来形成氮化物膜 并且与半导体区域相邻,相对于氮化物膜进行氧化,将形成在绝缘区域上的氮化物膜的一部分转换为氧化膜,并且使形成在该半导体层上的氮化膜的一部分 半导体区域作为电荷存储绝缘膜的至少一部分,在电荷存储绝缘膜上形成块绝缘膜,并在块绝缘膜上形成栅极电极膜。