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1. 发明授权

US09062851B2 LED lamp, LED illumination device, and LED module 有权
标题翻译： LED灯，LED照明装置和LED模块
公开(公告)号：US09062851B2
公开(公告)日：2015-06-23
申请号：US13575430
申请日：2011-02-16
申请人： Yoko Matsubayashi , Hiroshi Yagi , Masanori Shimizu , Yoshio Manabe , Atsushi Motoya , Kazuhiro Matsuo , Toshio Mori
发明人： Yoko Matsubayashi , Hiroshi Yagi , Masanori Shimizu , Yoshio Manabe , Atsushi Motoya , Kazuhiro Matsuo , Toshio Mori
IPC分类号： F21V9/16 , F21V3/04 , F21K99/00 , C09K11/77 , C03C3/00 , F21Y101/02 , H01L33/50 , F21Y103/00
CPC分类号： F21V3/0481 , C03C3/00 , C09K11/7774 , F21K9/232 , F21K9/27 , F21K9/64 , F21V3/12 , F21Y2103/10 , F21Y2115/10 , H01L33/504
摘要： An LED lamp provides a strong red color with a natural appearance. The LED lamp is provided with an LED module and a filter. The LED module includes a blue LED with a main emission peak in the 440 nm to 460 nm wavelength band, a green/yellow phosphor that is excited by light emitted by the blue LED, and a red phosphor that is excited by light emitted by at least one of the blue LED and the green/yellow phosphor. The filter reduces the spectral radiation intensity of at least a portion of the 570 nm to 590 nm wavelength band among light emitted by the LED module.
摘要翻译： LED灯提供强烈的红色，具有自然的外观。 LED灯具有LED模块和滤光片。 LED模块包括在440nm至460nm波长带中具有主发射峰的蓝色LED，由蓝色LED发射的光激发的绿色/黄色荧光体，以及由在其上发射的光激发的红色荧光体蓝色LED和绿色/黄色荧光粉中的至少一种。滤光器降低由LED模块发出的光之间的570nm至590nm波长带的至少一部分的光谱辐射强度。

2. 发明申请

US20120300432A1 LED LAMP, LED ILLUMINATION DEVICE, AND LED MODULE 有权
标题翻译： LED灯，LED照明装置和LED模块
公开(公告)号：US20120300432A1
公开(公告)日：2012-11-29
申请号：US13575430
申请日：2011-02-16
申请人： Yoko Matsubayashi , Hiroshi Yagi , Masanori Shimizu , Yoshio Manabe , Atsushi Motoya , Kazuhiro Matsuo , Toshio Mori
发明人： Yoko Matsubayashi , Hiroshi Yagi , Masanori Shimizu , Yoshio Manabe , Atsushi Motoya , Kazuhiro Matsuo , Toshio Mori
IPC分类号： F21V9/16
CPC分类号： F21V3/0481 , C03C3/00 , C09K11/7774 , F21K9/232 , F21K9/27 , F21K9/64 , F21V3/12 , F21Y2103/10 , F21Y2115/10 , H01L33/504
摘要： An LED lamp provides a strong red color with a natural appearance. The LED lamp is provided with an LED module and a filter. The LED module includes a blue LED with a main emission peak in the 440 nm to 460 nm wavelength band, a green/yellow phosphor that is excited by light emitted by the blue LED, and a red phosphor that is excited by light emitted by at least one of the blue LED and the green/yellow phosphor. The filter reduces the spectral radiation intensity of at least a portion of the 570 nm to 590 nm wavelength band among light emitted by the LED module.
摘要翻译： LED灯提供强烈的红色，具有自然的外观。 LED灯具有LED模块和滤光片。 LED模块包括在440nm至460nm波长带中具有主发射峰的蓝色LED，由蓝色LED发射的光激发的绿色/黄色荧光体，以及由在其上发射的光激发的红色荧光体蓝色LED和绿色/黄色荧光粉中的至少一种。滤光器降低由LED模块发出的光之间的570nm至590nm波长带的至少一部分的光谱辐射强度。

3. 发明授权

US07538495B2 Fluorescent lamp, backlight apparatus, and manufacturing method of fluorescent lamp 失效
标题翻译：荧光灯，背光装置和荧光灯的制造方法
公开(公告)号：US07538495B2
公开(公告)日：2009-05-26
申请号：US11237989
申请日：2005-09-28
申请人： Hideki Wada , Hirofumi Yamashita , Shogo Toda , Yoshio Manabe , Takashi Maniwa , Nozomu Hashimoto , Kazuhiro Matsuo , Katsumi Itagaki
发明人： Hideki Wada , Hirofumi Yamashita , Shogo Toda , Yoshio Manabe , Takashi Maniwa , Nozomu Hashimoto , Kazuhiro Matsuo , Katsumi Itagaki
IPC分类号： H01J17/16 , H01J61/35
CPC分类号： H01J61/305 , H01J9/20 , H01J61/35
摘要： A fluorescent lamp including a glass bulb, a protection layer formed on an inner surface of the glass bulb, and a phosphor layer formed on a surface of the protection layer. The surface of the protection layer that is in contact with the phosphor layer has cracks. The bulk density of the metal oxide particles in the protection layer 32 is 80% or more. The surface of the protection layer 32 has 20 to 200 cracks per millimeter in a tube axis direction. The average particle diameter of the metal oxide particles is in the range from 0.01 μm to 1 μm. The thickness of the protection layer is in the range from 0.5 μm to 5 μm.
摘要翻译：一种荧光灯，包括玻璃灯泡，形成在玻璃泡的内表面上的保护层和形成在保护层的表面上的荧光体层。与磷光体层接触的保护层的表面具有裂纹。保护层32中的金属氧化物粒子的体积密度为80％以上。保护层32的表面在管轴方向上每毫米具有20至200个裂纹。金属氧化物颗粒的平均粒径在0.01μm至1μm的范围内。保护层的厚度在0.5μm到5μm的范围内。

4. 发明申请

US20060076895A1 Fluorescent lamp, backlight apparatus, and manufacturing method of fluorescent lamp 失效
公开(公告)号：US20060076895A1
公开(公告)日：2006-04-13
申请号：US11237989
申请日：2005-09-28
申请人： Hideki Wada , Hirofumi Yamashita , Shogo Toda , Yoshio Manabe , Takashi Maniwa , Nozomu Hashimoto , Kazuhiro Matsuo , Katsumi Itagaki
发明人： Hideki Wada , Hirofumi Yamashita , Shogo Toda , Yoshio Manabe , Takashi Maniwa , Nozomu Hashimoto , Kazuhiro Matsuo , Katsumi Itagaki
IPC分类号： H01J61/35
CPC分类号： H01J61/305 , H01J9/20 , H01J61/35
摘要： A fluorescent lamp including a glass bulb, a protection layer formed on an inner surface of the glass bulb, and a phosphor layer formed on a surface of the protection layer. The surface of the protection layer that is in contact with the phosphor layer has cracks. The bulk density of the metal oxide particles in the protection layer 32 is 80% or more. The surface of the protection layer 32 has 20 to 200 cracks per millimeter in a tube axis direction. The average particle diameter of the metal oxide particles is in the range from 0.01 μm to 1 μm. The thickness of the protection layer is in the range from 0.5 μm to 5 μm.

5. 发明授权

US08791521B2 Semiconductor device and method of manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US08791521B2
公开(公告)日：2014-07-29
申请号：US13423664
申请日：2012-03-19
申请人： Koji Nakahara , Kazuhiro Matsuo , Masayuki Tanaka , Hirofumi Iikawa
发明人： Koji Nakahara , Kazuhiro Matsuo , Masayuki Tanaka , Hirofumi Iikawa
IPC分类号： H01L29/788
CPC分类号： H01L27/11521 , H01L29/42324 , H01L29/7881
摘要： A semiconductor device includes an interelectrode insulating film formed between a charge storage layer and a control electrode layer. The interelectrode insulating film is formed in a first region above an upper surface of an element isolation insulating film, a second region along a sidewall of the charge storage layer, and a third region above an upper surface of the charge storage layer. The interelectrode insulating film includes a first stack including a first silicon nitride film or a high dielectric constant film interposed between a first and a second silicon oxide film or a second stack including a second high dielectric constant film and a third silicon oxide film, and a second silicon nitride film formed between the control electrode layer and the first or the second stack. The second silicon nitride film is relatively thinner in the third region than in the first region.
摘要翻译：半导体器件包括在电荷存储层和控制电极层之间形成的电极间绝缘膜。电极间绝缘膜形成在元件隔离绝缘膜的上表面上方的第一区域，沿着电荷存储层的侧壁的第二区域和电荷存储层的上表面上方的第三区域。电极间绝缘膜包括：第一堆叠，其包括介于第一和第二氧化硅膜之间的第一氮化硅膜或高介电常数膜，或包括第二高介电常数膜和第三氧化硅膜的第二堆叠，形成在控制电极层和第一或第二堆叠之间的第二氮化硅膜。在第三区域中，第二氮化硅膜比第一区域相对薄。

6. 发明授权

US08525252B2 Nonvolatile semiconductor memory device and method of fabricating the same 有权
公开(公告)号：US08525252B2
公开(公告)日：2013-09-03
申请号：US13233788
申请日：2011-09-15
申请人： Kenichiro Toratani , Masayuki Tanaka , Kazuhiro Matsuo
发明人： Kenichiro Toratani , Masayuki Tanaka , Kazuhiro Matsuo
IPC分类号： H01L29/792
CPC分类号： H01L29/792 , G11C16/0466 , H01L21/28282 , H01L27/11568 , H01L27/11582 , H01L29/4234 , H01L29/66833 , H01L29/7926
摘要： According to one embodiment, a nonvolatile semiconductor memory device includes a semiconductor region, a tunnel insulator provided above the semiconductor region, a charge storage insulator provided above the tunnel insulator, a block insulator provided above the charge storage insulator, a control gate electrode provided above the block insulator, and an interface region including a metal element, the interface region being provided at one interface selected from between the semiconductor region and the tunnel insulator, the tunnel insulator and the charge storage insulator, the charge storage insulator and the block insulator, and the block insulator and the control gate electrode.

7. 发明授权

US08408797B2 Method of manufacturing bearing device component coated with photoluminescence material, bearing device component and processing device with an indicator displaying information for a signal including information in accordance with light emission of a photoluminescence material applied on bearing device 失效
标题翻译：制造用光致发光材料涂覆的轴承装置部件的方法，轴承装置部件和处理装置，其具有显示信息的指示器，该信号包括根据应用于轴承装置上的光致发光材料的发光的信息
公开(公告)号：US08408797B2
公开(公告)日：2013-04-02
申请号：US13226676
申请日：2011-09-07
申请人： Chenglin Chen , Kazuhiro Matsuo
发明人： Chenglin Chen , Kazuhiro Matsuo
IPC分类号： F16C32/06 , G08B21/00 , H01L21/00 , H01L21/26
CPC分类号： G01N21/64 , B05D1/36 , F16C17/026 , F16C17/24 , F16C33/00 , F16C33/10 , F16C33/14 , F16C41/008 , F16C2202/60 , F16C2223/30 , F16C2370/12 , G01N21/00 , G01N21/6456 , G01N21/8422 , G01N2021/646 , G01N2021/8427
摘要： A method of manufacturing a bearing device component is provided. The bearing device includes a shaft and a sleeve that surrounds the shaft, and at least either one of the shaft and the sleeve is referred to as a work. The method includes: a process of forming a coating of an anti-sticking-lube polymer on the work; a process of applying a photoluminescence material to a range overlapping a range where the coating of the anti-sticking-lube polymer is formed; and a condition detecting process of causing the photoluminescence material to emit light by causing the work to be irradiated with excitation light that excites the photoluminescence material, and detecting an applied condition of the photoluminescence material based on the light emission of the photoluminescence material, thereby detecting a condition of the coating of the anti-sticking-lube polymer.
摘要翻译：提供一种制造轴承装置部件的方法。轴承装置包括轴和围绕轴的套筒，并且轴和套筒中的至少任一个被称为工件。该方法包括：在工件上形成防粘稠聚合物涂层的工艺; 将光致发光材料施加到与形成防粘着体聚合物的涂层的范围重叠的范围的工序; 以及通过使激发光致发光材料的激发光照射的工作使光致发光材料发光的条件检测处理，并且基于光致发光材料的发光检测光致发光材料的施加条件，由此检测涂布防粘润滑剂聚合物的条件。

8. 发明申请

US20110170270A1 ELECTRONIC DEVICE 有权
标题翻译：电子设备
公开(公告)号：US20110170270A1
公开(公告)日：2011-07-14
申请号：US13005332
申请日：2011-01-12
申请人： MASAAKI Inoue , Takashi Matsumoto , Kazuhiro Matsuo , Junji Baba , Manabu Sawa , Kazuo Sugai
发明人： MASAAKI Inoue , Takashi Matsumoto , Kazuhiro Matsuo , Junji Baba , Manabu Sawa , Kazuo Sugai
IPC分类号： H05K5/00
CPC分类号： H05K7/1445
摘要： The present invention relates to an electronic device including plural circuit board units that can be removed from the electronic device. The electronic device is designed to increase a data transfer rate between the circuit board units by using a circuit board for interconnect for electrically coupling the circuit board units placed in the electronic device, and using a cable for electrically or optically coupling the circuit board units placed in the electric device, or both of the cables.
摘要翻译：电子设备技术领域本发明涉及一种电子设备，包括可以从电子设备移除的多个电路板单元。该电子设备被设计成通过使用用于互连的电路板来电连接放置在电子设备中的电路板单元，并且使用用于将放置的电路板单元电气或光学耦合的电缆来增加电路板单元之间的数据传输速率在电气设备中，或两个电缆。

9. 发明申请

US20100308393A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME 审中-公开
标题翻译：半导体器件及其制造方法
公开(公告)号：US20100308393A1
公开(公告)日：2010-12-09
申请号：US12722111
申请日：2010-03-11
申请人： Kazuhiro Matsuo , Masayuki Tanaka
发明人： Kazuhiro Matsuo , Masayuki Tanaka
IPC分类号： H01L29/788 , H01L21/336
CPC分类号： H01L29/42336 , H01L27/11521 , H01L29/40114
摘要： A semiconductor device including a semiconductor substrate having an active region isolated by an element isolation insulating film; a floating gate electrode film formed on a gate insulating film residing on the active region; an interelectrode insulating film formed above an upper surface of the element isolation insulating film and an upper surface and sidewalls of the floating gate electrode film, the interelectrode insulating film being configured by multiple film layers including a high dielectric film having a dielectric constant equal to or greater than a silicon nitride film; a control gate electrode film formed on the interelectrode insulating film; and a silicon oxide film formed between the upper surface of the floating gate electrode film and the interelectrode insulating film; wherein the high dielectric film of the interelectrode insulating film is placed in direct contact with the sidewalls of the floating gate electrode film.
摘要翻译：一种半导体器件，包括具有通过元件隔离绝缘膜隔离的有源区的半导体衬底; 形成在位于有源区上的栅极绝缘膜上的浮栅电极膜; 在所述元件隔离绝缘膜的上表面上方形成的电极间绝缘膜，以及所述浮栅电极膜的上表面和侧壁，所述电极间绝缘膜由多层膜构成，所述多个膜层包括介电常数等于或等于大于氮化硅膜; 形成在电极间绝缘膜上的控制栅极电极膜; 以及在所述浮栅电极膜的上表面和所述电极间绝缘膜之间形成的氧化硅膜; 其中，电极间绝缘膜的高电介质膜与浮栅电极膜的侧壁直接接触。

10. 发明授权

US07812391B2 Nonvolatile semiconductor memory device and method of fabricating the same 失效
标题翻译：非易失性半导体存储器件及其制造方法
公开(公告)号：US07812391B2
公开(公告)日：2010-10-12
申请号：US12354200
申请日：2009-01-15
申请人： Kazuhiro Matsuo , Masayuki Tanaka , Atsuhiro Suzuki
发明人： Kazuhiro Matsuo , Masayuki Tanaka , Atsuhiro Suzuki
IPC分类号： H01L21/76
CPC分类号： H01L29/42336 , H01L27/115 , H01L27/11521 , H01L29/94
摘要： A nonvolatile semiconductor memory device includes a semiconductor substrate having a plurality of active regions separately formed by a plurality of trenches formed in a surface of the substrate at predetermined intervals, a first gate insulating film formed on an upper surface of the substrate corresponding to each active region, a gate electrode of a memory cell transistor formed by depositing an electrical charge storage layer formed on an upper surface of the gate insulating film, a second gate insulating film and a control gate insulating film sequentially, an element isolation insulating film buried in each trench and formed from a coating type oxide film, and an insulating film formed inside each trench on a boundary between the semiconductor substrate and the element isolation insulating film, the insulating film containing nontransition metal atoms and having a film thickness not more than 5 Å.
摘要翻译：非易失性半导体存储器件包括：半导体衬底，具有由以形成在衬底的表面中的预定间隔分开形成的多个沟槽分开形成的多个有源区;形成在衬底的上表面上的第一栅极绝缘膜，区域，通过依次沉积形成在栅极绝缘膜的上表面上的电荷存储层，第二栅极绝缘膜和控制栅极绝缘膜而形成的存储单元晶体管的栅电极，每个区域中埋设的元件隔离绝缘膜沟槽，并且由涂覆型氧化物膜形成，并且在半导体衬底和元件隔离绝缘膜之间的边界上形成在每个沟槽内的绝缘膜，所述绝缘膜包含非转移金属原子并且具有不大于5的膜厚度。

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