专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

51. 发明申请

US20090142479A1 Method of Manufacturing Semiconductor Device-Fabrication Wafer Holder 审中-公开
标题翻译：制造半导体器件制造晶圆架的方法
公开(公告)号：US20090142479A1
公开(公告)日：2009-06-04
申请号：US12367558
申请日：2009-02-09
申请人： Masuhiro Natsuhara , Hirohiko Nakata , Manabu Hashikura
发明人： Masuhiro Natsuhara , Hirohiko Nakata , Manabu Hashikura
IPC分类号： B05D3/12
CPC分类号： H01L21/67103 , H01L21/6831
摘要： Wafer holder and semiconductor manufacturing equipment in which the holder is installed, the wafer holder having a wafer-carrying surface, wherein incidence of warping and cracking when the wafer holder is heated is slight. In the wafer holder having a wafer-carrying surface, electrical circuitry consisting of one or more sinter laminae is formed on the face or in the interior of the wafer holder; and by rendering pores present in the circuitry, the incidence of warping and cracking can be made very slight. The electrical circuitry is preferably any of an electrode circuit for an electrostatic chuck, a resistive-heating-element circuit, an RF-power electrode circuit, and a high-voltage-generating electrode circuit.
摘要翻译：晶片保持器和其中安装有保持器的半导体制造设备，具有晶片承载表面的晶片保持器，其中晶片保持器被加热时的翘曲和开裂的发生率很小。在具有晶片承载表面的晶片保持器中，在晶片保持器的表面或内部形成由一个或多个烧结层组成的电路; 并且通过使电路中存在毛孔，翘曲和开裂的发生率可以非常轻微。电路优选为静电卡盘的电极电路，电阻加热元件电路，RF功率电极电路以及高压发生电极电路中的任一种。

52. 发明授权

US07425838B2 Body for keeping a wafer and wafer prober using the same 有权
标题翻译：保持晶圆和晶圆探测器的身体使用相同
公开(公告)号：US07425838B2
公开(公告)日：2008-09-16
申请号：US11485624
申请日：2006-07-13
申请人： Katsuhiro Itakura , Masuhiro Natsuhara , Hirohiko Nakata
发明人： Katsuhiro Itakura , Masuhiro Natsuhara , Hirohiko Nakata
IPC分类号： G01R31/02
CPC分类号： H01L21/67109 , G01R31/2865 , G01R31/2877
摘要： According to the invention, there is provided a wafer holding member for use in a wafer prober for inspecting a semiconductor wafer, including a chuck top and a supporting member for supporting the chuck top, wherein the supporting member has a bottom portion facing to the chuck top, a cavity portion is formed between the chuck top and the bottom portion of the supporting member, and there is provided, in the cavity portion, at least a portion of a cooling mechanism for cooling at least one of the chuck top and the supporting member. Further, there is provided a wafer prober using the wafer holding member.
摘要翻译：根据本发明，提供一种晶片保持构件，用于检查半导体晶片的晶片保持构件，该半导体晶片包括卡盘顶部和用于支撑卡盘顶部的支撑构件，其中支撑构件具有面向卡盘的底部顶部，在支撑构件的卡盘顶部和底部之间形成空腔部分，并且在空腔部分中设置有用于冷却卡盘顶部和支撑件中的至少一个的冷却机构的至少一部分会员。此外，提供了使用晶片保持构件的晶片探测器。

53. 发明申请

US20080083979A1 Wafer holder and semiconductor manufacturing apparatus equipped with wafer holder 审中-公开
标题翻译：晶圆架和半导体制造装置配有晶圆座
公开(公告)号：US20080083979A1
公开(公告)日：2008-04-10
申请号：US11544725
申请日：2006-10-10
申请人： Masuhiro Natsuhara , Hirohiko Nakata
发明人： Masuhiro Natsuhara , Hirohiko Nakata
IPC分类号： H01L23/12
CPC分类号： H01J37/32559 , H01J37/32091 , H01J2237/2001
摘要： A wafer holder for a semiconductor manufacturing apparatus is provided with which a film may be evenly formed over the entire wafer surface and the incidence of particle generation is low, as well as a semiconductor manufacturing apparatus equipped with same.The wafer holder of the present invention is a ceramic wafer holder in which a heating body and a high-frequency electrode are embedded, and a diameter of the high-frequency electrode embedded in the ceramic is greater than the diameter of an upper high-frequency electrode disposed opposite the high-frequency electrode. A main component of the ceramic is preferably aluminum nitride, and the high-frequency electrode is preferably in the form of a film.
摘要翻译：提供了一种半导体制造装置的晶片保持器，其中可以在整个晶片表面上均匀地形成膜并且颗粒产生的发生率低，以及配备其的半导体制造装置。本发明的晶片保持器是嵌入加热体和高频电极的陶瓷晶片保持器，嵌入陶瓷的高频电极的直径大于上部高频的直径电极与高频电极相对设置。陶瓷的主要成分优选为氮化铝，高频电极优选为膜状。

54. 发明申请

US20070133964A1 Fluid heating heater 审中-公开
标题翻译：流体加热器
公开(公告)号：US20070133964A1
公开(公告)日：2007-06-14
申请号：US11636495
申请日：2006-12-11
申请人： Masuhiro Natsuhara , Hirohiko Nakata
发明人： Masuhiro Natsuhara , Hirohiko Nakata
IPC分类号： H05B3/78
CPC分类号： H05B3/265 , F24H1/102 , H05B3/141 , H05B2203/003
摘要： The invention provides a fluid heater in which the efficiency of heat transfer to a fluid is improved, downsizing of the heater itself can be achieved, and the rise time until warm water heated to a necessary temperature is supplied is shortened, which results in reduction of the power consumption. The heater includes a flat ceramic substrate (1) and a heating element formed on one surface of or in the interior of the ceramic substrate (1). The ceramic substrate (1) is made of A1N, etc. or silicon nitride, whose thermal conductivity is 50W/m·K or more. A zigzag water channel is formed by walls 6, etc., on the fluid-heating surface of the ceramic substrate (1). A plurality of fins 5 are fixed in the water channel. A heat insulating material 8 can be mounted so as to cover a surface excluding the fluid-heating surface of the ceramic substrate (1).
摘要翻译：本发明提供了一种流体加热器，其中提高了对流体的传热效率，可以实现加热器本身的小型化，并且提供加热到必要温度的温水的上升时间缩短，从而导致功耗。加热器包括平坦陶瓷基板（1）和形成在陶瓷基板（1）的内表面上或其内部的加热元件。陶瓷基板（1）由A 1 N等或氮化硅制成，其导热率为50W / m·K以上。在陶瓷基板（1）的流体加热表面上由壁6等形成锯齿形的水通道。多个翅片5固定在水通道中。绝热材料8可以安装成覆盖除了陶瓷基板（1）的流体加热表面之外的表面。

55. 发明授权

US07177536B2 Fluid heating heater 失效
标题翻译：流体加热器
公开(公告)号：US07177536B2
公开(公告)日：2007-02-13
申请号：US10169249
申请日：2001-10-19
申请人： Masuhiro Natsuhara , Hirohiko Nakata
发明人： Masuhiro Natsuhara , Hirohiko Nakata
IPC分类号： F24H1/10
CPC分类号： H05B3/265 , F24H1/102 , H05B3/141 , H05B2203/003
摘要： The invention provides a fluid heater in which the efficiency of heat transfer to a fluid is improved, downsizing of the heater itself can be achieved, and the rise time until warm water heated to a necessary temperature is supplied is shortened, which results in reduction of the power consumption. The heater includes a flat ceramic substrate (1) and a beating element formed on one surface of or in the interior of the ceramic substrate (1). The ceramic substrate (1) is made of AlN, etc. or silicon nitride, whose thermal conductivity is 50 W/m·K or more. A zigzag water channel is formed by walls 6, etc., on the fluid-heating surface of the ceramic substrate (1). A plurality of fins 5 are fixed in the water channel. A heat insulating material 8 can be mounted so as to cover a surface excluding the fluid-heating surface of the ceramic substrate (1).
摘要翻译：本发明提供了一种流体加热器，其中提高了对流体的传热效率，可以实现加热器本身的小型化，并且提供加热到必要温度的温水的上升时间缩短，这导致功耗。加热器包括平坦陶瓷基板（1）和形成在陶瓷基板（1）的内表面上或其内部的打浆元件。陶瓷基板（1）由AlN等或氮化硅制成，其导热率为50W / m·K以上。在陶瓷基板（1）的流体加热表面上由壁6等形成锯齿形的水通道。多个翅片5固定在水通道中。绝热材料8可以安装成覆盖除了陶瓷基板（1）的流体加热表面之外的表面。

56. 发明申请

US20070024299A1 Body for keeping a wafer and wafer prober using the same 有权
标题翻译：保持晶圆和晶圆探测器的身体使用相同
公开(公告)号：US20070024299A1
公开(公告)日：2007-02-01
申请号：US11485624
申请日：2006-07-13
申请人： Katsuhiro Itakura , Masuhiro Natsuhara , Hirohiko Nakata
发明人： Katsuhiro Itakura , Masuhiro Natsuhara , Hirohiko Nakata
IPC分类号： G01R31/02 , B25B1/00
CPC分类号： H01L21/67109 , G01R31/2865 , G01R31/2877
摘要： According to the invention, there is provided a wafer holding member for use in a wafer prober for inspecting a semiconductor wafer, including a chuck top and a supporting member for supporting the chuck top, wherein the supporting member has a bottom portion facing to the chuck top, a cavity portion is formed between the chuck top and the bottom portion of the supporting member, and there is provided, in the cavity portion, at least a portion of a cooling mechanism for cooling at least one of the chuck top and the supporting member. Further, there is provided a wafer prober using the wafer holding member.
摘要翻译：根据本发明，提供一种晶片保持构件，用于检查半导体晶片的晶片保持构件，该半导体晶片包括卡盘顶部和用于支撑卡盘顶部的支撑构件，其中支撑构件具有面向卡盘的底部顶部，在支撑构件的卡盘顶部和底部之间形成空腔部分，并且在空腔部分中设置有用于冷却卡盘顶部和支撑件中的至少一个的冷却机构的至少一部分会员。此外，提供了使用晶片保持构件的晶片探测器。

57. 发明申请

US20060186904A1 Wafer holder for wafer prober and wafer prober equipped with the same 有权
标题翻译：用于晶圆探针和晶圆探测器的晶片支架配备相同
公开(公告)号：US20060186904A1
公开(公告)日：2006-08-24
申请号：US11287847
申请日：2005-11-29
申请人： Masuhiro Natsuhara , Katsuhiro Itakura , Hirohiko Nakata
发明人： Masuhiro Natsuhara , Katsuhiro Itakura , Hirohiko Nakata
IPC分类号： G01R31/02
CPC分类号： G01R31/2886 , G01R31/2891
摘要： The invention provides a wafer-prober wafer holder that allows positional precision and temperature uniformity to be increased, and also allows the chip to be heated and cooled rapidly, and a wafer prober device provided with the same. The wafer-prober wafer holder of the invention is constituted by a chuck top having a chuck top conducting layer on its surface, and a support member for supporting the chuck top, and has a cavity in a portion between the chuck top and the support member. The chuck top preferably is provided with a heating member.
摘要翻译：本发明提供了一种能够提高位置精度和温度均匀性的晶片探针晶片保持器，并且还允许芯片被快速加热和冷却，以及提供其的晶片探测器装置。本发明的晶片探针晶片保持器由其表面上具有卡盘顶部导电层的卡盘顶板和用于支撑卡盘顶部的支撑件构成，并且在卡盘顶部和支撑件之间的部分中具有空腔。卡盘顶部优选地设置有加热构件。

58. 发明申请

US20050028739A1 Semiconductor Manufacturing Apparatus 审中-公开
标题翻译：半导体制造装置
公开(公告)号：US20050028739A1
公开(公告)日：2005-02-10
申请号：US10710841
申请日：2004-08-06
申请人： Masuhiro Natsuhara , Hirohiko Nakata
发明人： Masuhiro Natsuhara , Hirohiko Nakata
IPC分类号： C23C16/00 , C23C16/458 , H01L21/68 , H01L21/683
CPC分类号： C23C16/4586 , C23C16/4581
摘要： According to the present invention, a wafer holder is supported by support pieces mounted on a pedestal and is installed within the processing chamber of a semiconductor manufacturing device, wherein the lift pins are set up anchored to the semiconductor-manufacturing-device chamber and the pedestal is driven vertically, thereby running the wafer holder up/down to thrust the lift pins out from, or retract them into, the top side of the wafer holder, which makes it possible to dechuck wafers from and pocket them into the holder. Consequently, leveling the height of the tip ends of the plurality of lift pins is facilitated and synchronization problems are completely eliminated besides, which thus makes it possible to prevent wafer drop-off during wafer dechucking/pocketing. And since a mechanism for synchronously driving the plural lift pins up/down is unnecessary, the device overall can be made more compact.
摘要翻译：根据本发明，晶片保持器由安装在基座上的支撑件支撑并安装在半导体制造装置的处理室内，其中提升销被固定在半导体制造装置室和基座被垂直驱动，从而使晶片保持器上/下移动以将提升销推出或者将其退回到晶片保持器的顶侧，这使得可以将晶片从其中取出并将其包入保持器中。因此，除了多个提升销的顶端的高度以外，还能够完全消除同步问题，从而可以防止晶片脱胶/贴片期间的晶片脱落。并且，由于不需要同时驱动多个提升销的机构，因此能够使装置整体更加紧凑。

59. 发明授权

US06716304B2 Wafer holder for semiconductor manufacturing apparatus, and method of manufacturing the wafer holder 失效
标题翻译：用于半导体制造装置的晶片保持器，以及晶片保持器的制造方法
公开(公告)号：US06716304B2
公开(公告)日：2004-04-06
申请号：US10309402
申请日：2002-12-03
申请人： Akira Kuibira , Hirohiko Nakata , Kenjiro Higaki , Masuhiro Natsuhara , Takashi Ishii , Yasuyuki Matsui
发明人： Akira Kuibira , Hirohiko Nakata , Kenjiro Higaki , Masuhiro Natsuhara , Takashi Ishii , Yasuyuki Matsui
IPC分类号： H05H100
CPC分类号： H01L21/6835 , C04B37/005 , C04B41/009 , C04B41/52 , C04B41/89 , C04B2237/06 , C04B2237/062 , C04B2237/064 , C04B2237/066 , C04B2237/08 , C04B2237/10 , C04B2237/122 , C04B2237/123 , C04B2237/125 , C04B2237/343 , C04B2237/366 , C04B2237/368 , C04B2237/52 , C04B2237/567 , C04B2237/62 , C04B2237/66 , C04B2237/704 , C04B2237/708 , C04B2237/72 , C04B2237/80 , H01L21/4857 , H01L21/67103 , C04B41/0072 , C04B41/4539 , C04B41/4572 , C04B41/5133 , C04B41/5022 , C04B35/581
摘要： A wafer holder for a semiconductor manufacturing apparatus has a high heat conductivity. The wafer holder includes a sintered ceramic piece, a conductive layer such as a heater circuit pattern which can be formed with high precision on at least one surface of the sintered ceramic piece, and a protective layer formed over the conductive layer on the sintered ceramic piece so as to cover a surface of the conductive layer. The protective layer may contain a glass, a non-oxide ceramic such as aluminum nitride or silicon nitride, an oxide of ytterbium, neodymium and calcium, or an oxide of yttrium and aluminum. In a method of manufacturing the wafer holder, a paste containing metal particles is applied on a surface of the sintered ceramic piece and is fired to form a heater circuit pattern as the conductive layer. Then the protective layer is formed on the sintered ceramic piece to cover the surface of the conductive layer.
摘要翻译：用于半导体制造装置的晶片保持器具有高导热性。晶片保持器包括烧结陶瓷片，可以在烧结陶瓷片的至少一个表面上高精度地形成的加热器电路图案的导电层和形成在烧结陶瓷片上的导电层上的保护层以覆盖导电层的表面。保护层可以包含玻璃，诸如氮化铝或氮化硅的非氧化物陶瓷，镱，钕和钙的氧化物，或钇和铝的氧化物。在制造晶片保持器的方法中，将含有金属颗粒的糊剂施加在烧结陶瓷片的表面上，并且被烧制以形成作为导电层的加热器电路图案。然后在烧结陶瓷片上形成保护层以覆盖导电层的表面。

60. 发明授权

US06696103B1 Aluminium nitride ceramics and method for preparing the same 失效
标题翻译：氮化铝陶瓷及其制备方法
公开(公告)号：US06696103B1
公开(公告)日：2004-02-24
申请号：US09358484
申请日：1999-07-22
申请人： Kouhei Shimoda , Kazuya Kamitake , Hirohiko Nakata , Kazutaka Sasaki , Masuhiro Natsuhara , Harutoshi Ukegawa
发明人： Kouhei Shimoda , Kazuya Kamitake , Hirohiko Nakata , Kazutaka Sasaki , Masuhiro Natsuhara , Harutoshi Ukegawa
IPC分类号： B05D500
CPC分类号： C04B41/5063 , C04B35/581 , C04B41/5022 , C04B41/52 , C04B41/86 , C04B41/87 , C04B41/89 , H01L21/481 , H01L23/15 , H01L2924/0002 , H01L2924/00
摘要： Aluminium nitride ceramics improved in heat radiation property used as a substrate for integrated circuits and package material, comprising a sintered article consisting mainly of aluminium nitride and having a thermal conductivity higher than 100.W/m.K at room temperature and a surface layer consisting mainly of aluminium nitride or oxide glass deposited on the sintered article. A paste of aluminium nitride powder or oxide glass powder is coated on a surface of the sintered article of aluminium nitride and then is sintered to prepare a dense smooth surface layer.
摘要翻译：氮化铝陶瓷提高了用作集成电路和封装材料的基板的热辐射性能，其包括主要由氮化铝组成并且在室温下具有高于100.W / mK的热导率的烧结制品，以及主要由将氮化铝或氧化物玻璃沉积在烧结制品上。将氮化铝粉末或氧化物玻璃粉末的浆料涂覆在氮化铝烧结体的表面上，然后烧结以制备致密的光滑表面层。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式