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    • 52. 发明授权
    • Method of ignition and corresponding ignition unit
    • 点火方式和相应的点火装置
    • US06814047B2
    • 2004-11-09
    • US10312937
    • 2003-03-25
    • Manfred VogelWerner Herden
    • Manfred VogelWerner Herden
    • F02B1700
    • F02P3/053F02D37/02F02D41/3029F02P15/08
    • The present invention provides an ignition method for an internal combustion engine, an injection being alternatively performed in at least one first operating mode or in a second operating mode, and the ignition coil being charged as a function of the current operating mode. A control-pulse curve characteristic of the current operating mode is provided, and the charging of the ignition coil is performed by a control logic element in response to the control-pulse curve, using corresponding, different time characteristics of the primary current. The present invention also provides a corresponding ignition device for an internal combustion engine.
    • 本发明提供了一种用于内燃机的点火方法,在至少一个第一操作模式或第二操作模式中替代地执行喷射,并且点火线圈根据当前操作模式进行充电。 提供当前操作模式的控制脉冲曲线特性,并且通过响应于控制脉冲曲线的控制逻辑元件使用对应的初级电流的不同时间特性来执行点火线圈的充电。 本发明还提供了一种用于内燃机的相应点火装置。
    • 54. 发明授权
    • Spark plug having a creepage spark gap
    • 火花塞有漏电火花隙
    • US5731654A
    • 1998-03-24
    • US583023
    • 1996-01-19
    • Walter BenediktManfred VogelDittmar KlettWerner Herden
    • Walter BenediktManfred VogelDittmar KlettWerner Herden
    • H01T13/20H01T13/52H01T13/46
    • H01T13/52
    • A spark plug (10), for example for an internal combustion engine, having at least one center electrode (11) (high-voltage electrode) and at least one earth electrode (12), and an insulating spark plug insulator (13) and a creepage spark gap (14) between the center electrode (11) and the earth electrode (12). The creepage spark gap (14) has a pattern of islands comprising electrically-conductive material (16) which are insulated with respect to one another and are located on the outer surface zone of the spark plug insulator (13) or on the surface zone of an insulating material wafer (17) attached to outer surface of the insulator (13) of the spark plug (10).
    • PCT No.PCT / DE94 / 00982 Sec。 371日期1996年1月19日 102(e)1996年1月19日PCT PCT 1994年8月25日PCT公布。 出版物WO95 / 08207 日期1995年3月23日具有至少一个中心电极(11)(高压电极)和至少一个接地电极(12)的内燃机的火花塞(10)和绝缘火花塞 绝缘体(13)和中心电极(11)与接地电极(12)之间的漏电火花隙(14)。 漏电火花间隙(14)具有包括导电材料(16)的岛状图案,其彼此绝缘并且位于火花塞绝缘体(13)的外表面区域上或位于火花塞绝缘体(13)的表面区域上 安装在火花塞(10)的绝缘体(13)的外表面上的绝缘材料晶片(17)。
    • 55. 发明授权
    • High-voltage semiconductor device
    • 高压半导体器件
    • US5497010A
    • 1996-03-05
    • US78281
    • 1993-06-16
    • Manfred VogelWerner HerdenVolkmar DennerAnton Mindl
    • Manfred VogelWerner HerdenVolkmar DennerAnton Mindl
    • F02P7/03H01L27/12H01L29/861H01L29/866H01L29/74H01L31/111
    • F02P7/035H01L27/12
    • The high-voltage semiconductor device includes a single chip having a plurality of semiconductor elements connected in series with each other which includes an insulating substrate (2); a monocrystalline semiconductor carrier (1) of a first conductivity type applied to the insulating substrate (2); at least two terminals (5,6) located on opposite sides of the chip; strip-like areas (3) of a second conductivity type formed in the monocrystalline semiconductor carrier (1), the strip-like areas (3) each extending across the semiconductor carrier (1) at right angles to a longitudinal direction between the at least two terminals, forming pn junctions in the semiconductor carrier (1), being spaced from each other in the longitudinal direction over the single chip and penetrating an entire thickness of the semiconductor carrier; at least one doped region (7) in the strip-like areas (3) forming an at least four layered component in the single chip; and a light responsive device for reducing a switching voltage of the single chip when the pn junctions are irradiated with light.
    • PCT No.PCT / DE91 / 00900 Sec。 371日期:1993年6月16日 102(e)日期1993年6月16日PCT 1991年11月16日PCT PCT。 公开号WO92 / 11659 日期:1992年7月19日。高电压半导体器件包括具有彼此串联连接的多个半导体元件的单个芯片,其包括绝缘基板(2); 施加到所述绝缘基板(2)的第一导电类型的单晶半导体载体(1); 位于所述芯片的相对侧上的至少两个端子(5,6); 在单晶半导体载体(1)中形成的第二导电类型的条状区域(3),每个在半导体载体(1)之间延伸的条状区域(3)与至少在纵向方向成直角 在半导体载体(1)中形成pn结的两个端子在单个芯片上沿纵向彼此间隔开并穿透半导体载体的整个厚度; 所述带状区域(3)中的至少一个掺杂区域(7)在所述单个芯片中形成至少四层分层; 以及用于在用光照射pn结时降低单个芯片的开关电压的光响应装置。