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51. 发明申请

US20120182428A1 IMAGE PICKUP APPARATUS 有权
标题翻译：图像拾取装置
公开(公告)号：US20120182428A1
公开(公告)日：2012-07-19
申请号：US13352217
申请日：2012-01-17
申请人： Kenji Yamagata
发明人： Kenji Yamagata
IPC分类号： H04N5/33 , H04N5/225
CPC分类号： H04N5/2251 , H04N5/23203 , H04N5/23245 , H04N13/239 , H04N13/296
摘要： An image pickup apparatus includes a light emitting unit and a light receiving unit, a first light path changing unit, and a second light path changing unit, wherein the first light path changing unit is movable from a first state, in which a light flux from the light emitting unit is guided toward a front direction of the image pickup apparatus, into a second state in which a light flux from the light emitting unit is guided toward a front direction and a side direction of the image pickup apparatus, and wherein the second light path changing unit is movable from a first state, in which a light flux from a front direction of the image pickup apparatus is guided to the light receiving unit, into a second state in which light fluxes from a front direction and a side direction.
摘要翻译：一种图像拾取装置包括发光单元和光接收单元，第一光路改变单元和第二光路改变单元，其中第一光路改变单元可从第一状态移动，其中来自发光单元被引导到图像拾取装置的前方，到第二状态，其中来自发光单元的光束被引导到图像拾取装置的正面方向和侧面方向，并且其中第二光路改变单元可以从其中来自图像拾取装置的前方的光束被引导到光接收单元的第一状态移动到从正面方向和侧面方向光束的第二状态。

52. 发明申请

US20090315965A1 LED ARRAY MANUFACTURING METHOD, LED ARRAY AND LED PRINTER 审中-公开
标题翻译： LED阵列制造方法，LED阵列和LED打印机
公开(公告)号：US20090315965A1
公开(公告)日：2009-12-24
申请号：US12373626
申请日：2007-10-24
申请人： Kenji Yamagata , Yoshinobu Sekiguchi , Takao Yonehara , Kojiro Nishi
发明人： Kenji Yamagata , Yoshinobu Sekiguchi , Takao Yonehara , Kojiro Nishi
IPC分类号： B41J2/385 , H01L21/30 , H01L33/00
CPC分类号： H01L27/153 , B41J2/45 , H01L33/0079 , H01L33/10 , H01L2924/0002 , H01L2924/00
摘要： An LED array having no insulating film between the LED structure and the reflector thereof is manufactured by forming a luminescent layer 1102 and a DBR layer 1103 on a first substrate 100 with an insulating layer 1101 interposed between them, patterning the DBR layer and the luminescent layer to make them show an islands-like profile, bonding the DBR layer and a second substrate 110 with an insulating layer 1111 interposed between them, and separating the first substrate and the luminescent layer from each other.
摘要翻译：在LED结构及其反射体之间不具有绝缘膜的LED阵列通过在第一基板100上形成发光层1102和DBR层1103，其间插入有绝缘层1101来形成DBR层和发光层为了使其呈现岛状轮廓，将DBR层和第二基板110与介于它们之间的绝缘层1111接合，并且将第一基板和发光层彼此分离。

53. 发明申请

US20090057693A1 LIGHT-EMITTING ELEMENT ARRAY AND IMAGE FORMING APPARATUS 有权
标题翻译：发光元件阵列和图像形成装置
公开(公告)号：US20090057693A1
公开(公告)日：2009-03-05
申请号：US12259420
申请日：2008-10-28
申请人： Tetsuya Takeuchi , Makoto Koto , Kenji Yamagata , Yoshinobu Sekiguchi , Takao Yonehara
发明人： Tetsuya Takeuchi , Makoto Koto , Kenji Yamagata , Yoshinobu Sekiguchi , Takao Yonehara
IPC分类号： H01L33/00
CPC分类号： H01L27/153 , B41J2/45
摘要： A light-emitting element array can be manufactured without the separation of a metal reflection layer. The light-emitting element array includes a plurality of light-emitting element portions provided on a substrate, at least one space of the spaces between adjacent light-emitting element portions being electrically separated from each other, wherein the metal reflection layer is provided on the substrate and under the plurality of light-emitting element portions, and a resistive layer for electrical separation between the light-emitting element portions is provided between the plurality of light-emitting element portions and the metal reflection layer. The plurality of light-emitting element portions are divided into a plurality of blocks. Each of the blocks includes a plurality of light-emitting portions. The electrical separation between the light-emitting portions can be made as electrical separation between adjacent light-emitting element portions in adjacent and different blocks.
摘要翻译：可以在不分离金属反射层的情况下制造发光元件阵列。发光元件阵列包括设置在基板上的多个发光元件部，相邻的发光元件部之间的空间的至少一个空间彼此电分离，其中金属反射层设置在基板和多个发光元件部分之下，并且在多个发光元件部分和金属反射层之间设置用于在发光元件部分之间进行电气分离的电阻层。多个发光元件部分被分成多个块。每个块包括多个发光部分。发光部之间的电气分离可以在相邻的和不同的块之间的相邻的发光元件部分之间进行电分离。

54. 发明授权

US07491976B2 Light-emitting element array and image forming apparatus 失效
标题翻译：发光元件阵列和图像形成装置
公开(公告)号：US07491976B2
公开(公告)日：2009-02-17
申请号：US11782935
申请日：2007-07-25
申请人： Tetsuya Takeuchi , Makoto Koto , Kenji Yamagata , Yoshinobu Sekiguchi , Takao Yonehara
发明人： Tetsuya Takeuchi , Makoto Koto , Kenji Yamagata , Yoshinobu Sekiguchi , Takao Yonehara
IPC分类号： H01L33/00
CPC分类号： B21D43/09 , B21D43/021 , B41J2/45 , B65H23/1884 , H01L27/153 , Y10T83/0481 , Y10T83/148 , Y10T83/159
摘要： A light-emitting element array can be manufactured without the separation of a metal reflection layer. The light-emitting element array includes a plurality of light-emitting element portions provided on a substrate, at least one space of the spaces between adjacent light-emitting element portions being electrically separated from each other, wherein the metal reflection layer is provided on the substrate and under the plurality of light-emitting element portions, and a resistive layer for electrical separation between the light-emitting element portions is provided between the plurality of light-emitting element portions and the metal reflection layer. The plurality of light-emitting element portions are divided into a plurality of blocks. Each of the blocks includes a plurality of light-emitting portions. The electrical separation between the light-emitting portions can be made as electrical separation between adjacent light-emitting element portions in adjacent and different blocks.
摘要翻译：可以在不分离金属反射层的情况下制造发光元件阵列。发光元件阵列包括设置在基板上的多个发光元件部，相邻的发光元件部之间的空间的至少一个空间彼此电分离，其中金属反射层设置在基板和多个发光元件部分之下，并且在多个发光元件部分和金属反射层之间设置用于在发光元件部分之间进行电气分离的电阻层。多个发光元件部分被分成多个块。每个块包括多个发光部分。发光部之间的电气分离可以在相邻的和不同的块之间的相邻的发光元件部分之间进行电分离。

55. 发明申请

US20080240456A1 ACTIVE NOISE CONTROL APPARATUS 审中-公开
标题翻译：主动噪声控制装置
公开(公告)号：US20080240456A1
公开(公告)日：2008-10-02
申请号：US12058061
申请日：2008-03-28
申请人： Kosuke Sakamoto , Toshio Inoue , Akira Takahashi , Yasunori Kobayashi , Kenji Yamagata , Shinji Fukumoto , Noriyuki Hirasawa , Koji Suzuki
发明人： Kosuke Sakamoto , Toshio Inoue , Akira Takahashi , Yasunori Kobayashi , Kenji Yamagata , Shinji Fukumoto , Noriyuki Hirasawa , Koji Suzuki
IPC分类号： G10K11/16
CPC分类号： G10K11/178 , G10K2210/1282
摘要： A control characteristics changing unit reads, from an EEPROM, various control parameters in an ANC electronic controller, which correspond to specification information acquired from ECUs. The control characteristics changing unit then outputs control parameters, depending on changed specification information among the read control parameters, as change signals Sm1 through Sm6 to a basic signal generating unit, reference signal generating units, filter coefficient updating units, corrective signal generating units, switches, and variable-gain amplifiers, respectively.
摘要翻译：控制特征改变单元从EEPROM读取与ANC电子控制器中对应于从ECU获取的规格信息的各种控制参数。然后，控制特性改变单元根据读取控制参数中的改变的指定信息将改变信号Sm 1至Sm 6的控制参数输出到基本信号生成单元，参考信号生成单元，滤波器系数更新单元，校正信号生成单元，开关和可变增益放大器。

56. 发明申请

US20070262333A1 LIGHT-EMITTING ELEMENT ARRAY AND IMAGE FORMING APPARATUS 失效
标题翻译：发光元件阵列和图像形成装置
公开(公告)号：US20070262333A1
公开(公告)日：2007-11-15
申请号：US11782935
申请日：2007-07-25
申请人： Tetsuya TAKEUCHI , Makoto Koto , Kenji Yamagata , Yoshinobu Sekiguchi , Takao Yonehara
发明人： Tetsuya TAKEUCHI , Makoto Koto , Kenji Yamagata , Yoshinobu Sekiguchi , Takao Yonehara
IPC分类号： H01L33/00
CPC分类号： B21D43/09 , B21D43/021 , B41J2/45 , B65H23/1884 , H01L27/153 , Y10T83/0481 , Y10T83/148 , Y10T83/159
摘要： A light-emitting element array can be manufactured without the separation of a metal reflection layer. The light-emitting element array includes a plurality of light-emitting element portions provided on a substrate, at least one space of the spaces between adjacent light-emitting element portions being electrically separated from each other, wherein the metal reflection layer is provided on the substrate and under the plurality of light-emitting element portions, and a resistive layer for electrical separation between the light-emitting element portions is provided between the plurality of light-emitting element portions and the metal reflection layer. The plurality of light-emitting element portions are divided into a plurality of blocks. Each of the blocks includes a plurality of light-emitting portions. The electrical separation between the light-emitting portions can be made as electrical separation between adjacent light-emitting element portions in adjacent and different blocks.
摘要翻译：可以在不分离金属反射层的情况下制造发光元件阵列。发光元件阵列包括设置在基板上的多个发光元件部，相邻的发光元件部之间的空间的至少一个空间彼此电分离，其中金属反射层设置在基板和多个发光元件部分之下，并且在多个发光元件部分和金属反射层之间设置用于在发光元件部分之间进行电气分离的电阻层。多个发光元件部分被分成多个块。每个块包括多个发光部分。发光部之间的电气分离可以在相邻的和不同的块之间的相邻的发光元件部分之间进行电分离。

57. 发明申请

US20070190746A1 SUBSTRATE PROCESSING APPARATUS 审中-公开
标题翻译：基板加工设备
公开(公告)号：US20070190746A1
公开(公告)日：2007-08-16
申请号：US11690395
申请日：2007-03-23
申请人： Masataka Ito , Kenji Yamagata , Yasuo Kakizaki , Kazuhito Takanashi , Hiroshi Miyabayashi , Ryuji Moriwaki , Takashi Tsuboi
发明人： Masataka Ito , Kenji Yamagata , Yasuo Kakizaki , Kazuhito Takanashi , Hiroshi Miyabayashi , Ryuji Moriwaki , Takashi Tsuboi
IPC分类号： H01L21/30 , H01L21/46
CPC分类号： H01L22/12 , H01L21/02164 , H01L21/02238 , H01L21/30604 , H01L21/31056 , H01L21/31654 , H01L21/32134 , H01L21/6708 , H01L21/76254 , H01L21/76259 , H01L22/20
摘要： An SOI substrate which has a thick SOI layer is first prepared. Then, the SOI layer is thinned to a target film thickness using as a unit a predetermined thickness not more than that of one lattice. This thinning is performed by repeating a unit thinning step which includes an oxidation step of oxidizing the surface of the SOI layer by the predetermined thickness not more than that of one lattice and a removal step of selectively removing silicon oxide formed by the oxidation. The SOI layer of the SOI substrate is chemically etched by supplying a chemical solution to the SOI layer, and the film thickness of the etched SOI layer is measured. When the measured film thickness of the SOI layer has a predetermined value, a process of chemically etching the SOI layer ends.
摘要翻译：首先制备具有厚SOI层的SOI衬底。然后，使用不大于一个晶格的预定厚度的单位将SOI层减薄到目标膜厚度。这种稀化是通过重复单元稀化步骤进行的，该步骤包括将SOI层的表面氧化预定厚度不超过一个晶格的氧化步骤，以及选择性地除去氧化形成的氧化硅的去除步骤。通过向SOI层提供化学溶液来对SOI衬底的SOI层进行化学蚀刻，并测量蚀刻的SOI层的膜厚。当所测量的SOI层的膜厚度具有预定值时，SOI层的化学蚀刻处理结束。

58. 发明授权

US06653209B1 Method of producing silicon thin film, method of constructing SOI substrate and semiconductor device 有权
标题翻译：制造硅薄膜的方法，构造SOI衬底和半导体器件的方法
公开(公告)号：US06653209B1
公开(公告)日：2003-11-25
申请号：US09671857
申请日：2000-09-28
申请人： Kenji Yamagata
发明人： Kenji Yamagata
IPC分类号： H01L2146
CPC分类号： H01L21/30604 , H01L21/02052 , H01L21/76243 , H01L21/76259
摘要： To decrease the thickness of a silicon thin film to a desired value without deterioration of the quality thereof while avoiding the surface roughness due to speed increasing oxidation of crystal defect portions occurring when conducting the conventional sacrificial oxidation, effect of dust particles, etc. and also avoiding deterioration of high pressure resistance of the oxide film associated with the surface roughness. A silicon ultrathin film SOI layer is produced in the following two steps: preparing a SOI wafer having a silicon thin film, which exhibits less precipitation of oxygen, thereon by the SIMOX method or the semiconductor bonding method, and cleaning the SOI wafer with an alkali solution such as SC1 and TMAH, so as to utilize the etching action of the aqueous cleaner.
摘要翻译：为了将硅薄膜的厚度降低到期望值而不会降低其质量，同时避免由于在进行常规牺牲氧化时发生的晶体缺陷部分的氧化速度增加而导致的表面粗糙度，灰尘颗粒等的影响，以及避免与表面粗糙度有关的氧化膜的耐高压性变差。在以下两个步骤中制造硅超薄膜SOI层：通过SIMOX方法或半导体接合方法在其上准备具有较小的氧沉淀的硅薄膜的SOI晶片，并用碱清洗SOI晶片溶液如SC1和TMAH，以利用水性清洁剂的蚀刻作用。

59. 发明授权

US06517697B1 Anodizing method 有权
标题翻译：阳极氧化装置及其装置及方法
公开(公告)号：US06517697B1
公开(公告)日：2003-02-11
申请号：US09597849
申请日：2000-06-20
申请人： Kenji Yamagata
发明人： Kenji Yamagata
IPC分类号： C25D500
CPC分类号： H01L21/67086 , C25D11/005 , C25D11/32 , C25D17/00 , C25D17/001 , C25D17/06 , H01L21/02238 , H01L21/02255 , H01L21/31675 , H01L21/67028 , H01L21/6838 , Y10S134/902
摘要： A holder (102) made from an HF-resistant material includes annular suction pads (105, 108). The suction pad (105) is used to hold a small silicon substrate by suction, and the suction pad (108) is used to hold a large silicon substrate by suction. This makes silicon substrates with various sizes processable. A silicon substrate is held by suction by reducing a pressure in a space in a groove of the suction pad by a pump (120). An opening (103) is formed in the holder (102) so that the both surfaces of the silicon substrate are brought into contact with an HF solution (115). The silicon substrate is anodized by applying a DC voltage by using a platinum electrode (109a) as a negative electrode and a platinum electrode (109b) as a positive electrode, and thereby a substrate having a porous layer is produced.
摘要翻译：由耐高温材料制成的支架（102）包括环形吸盘（105,108）。吸盘（105）用于通过抽吸来保持小的硅衬底，并且吸盘（108）用于通过抽吸来容纳大的硅衬底。这使得具有各种尺寸的硅衬底可加工。通过泵（120）减小吸盘的凹槽中的空间中的压力，通过抽吸来保持硅衬底。在保持器（102）中形成开口（103），使得硅衬底的两个表面与HF溶液（115）接触。通过使用作为负极的铂电极（109a）和作为正极的铂电极（109b）施加直流电压来阳极氧化硅衬底，由此制造具有多孔层的衬底。

60. 发明授权

US06258240B1 Anodizing apparatus and method 有权
标题翻译：阳极氧化装置及方法及多孔基材
公开(公告)号：US06258240B1
公开(公告)日：2001-07-10
申请号：US09211418
申请日：1998-12-15
申请人： Satoshi Matsumura , Kenji Yamagata
发明人： Satoshi Matsumura , Kenji Yamagata
IPC分类号： C25D502
CPC分类号： C25D11/32 , C25D11/005 , C25D17/001 , C25D17/004 , C25D17/02 , H01L21/3063 , H01L21/76259
摘要： It is an object of the present invention to provide an anodizing apparatus capable of efficiently performing anodizing. In order to achieve this object, an anodizing apparatus for anodizing a substrate to be processed in an electrolytic solution includes a process tank for storing the electrolytic solution, the process tank having an opening in a wall, a negative electrode arranged in the process tank to oppose the opening, and a positive electrode contacting a surface of the substrate to be processed which is arranged to close the opening from an inside of the process tank, the surface being open outside the process tank through the opening.
摘要翻译：本发明的目的是提供能够有效地进行阳极氧化的阳极氧化装置。为了实现该目的，在电解液中阳极氧化待处理基板的阳极氧化装置包括：用于储存电解液的处理罐，处理槽在壁上开口，负极布置在处理罐中，相对于开口，正极与被处理基板的表面接触，该表面布置成从处理罐的内部封闭开口，该表面通过开口在处理罐外部开口。

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