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51. 发明申请

US20100109478A1 DRIVING APPARATUS 失效
标题翻译：驱动装置
公开(公告)号：US20100109478A1
公开(公告)日：2010-05-06
申请号：US12532930
申请日：2007-03-30
申请人： Jun Suzuki
发明人： Jun Suzuki
IPC分类号： H02N2/00 , H02K41/02 , H02N11/00 , G05G9/047
CPC分类号： G11B9/1436 , B82Y10/00 , G11B9/02 , Y10T74/20201
摘要： A driving apparatus (100t) is provided with: stage portion (130) which can be displaced; a first elastic portion (120-1) whose one end is connected to the stage portion and which has elasticity to displace the stage portion in one direction; a driving source device (180), to which other end of the first elastic portion is connected, comprising: a first applying device (181) for applying an excitation force for displacing the stage portion such that the stage portion is resonated in the one direction at a resonance frequency determined by the stage portion and the first elastic portion; and a second applying device (182) for applying a driving force for displacing, in a stepwise manner or in a continuous manner, the stage portion in other direction; a second elastic portion (120-2) whose one end is connected to the driving source device and which has elasticity to displace the stage portion in the one direction; a third elastic portion (120-3) whose one end is connected to other end of the second elastic portion and which has elasticity to displace the stage portion in the other direction; and a base portion (110) to which other end of the third elastic portion is connected.
摘要翻译：驱动装置（100t）具有能够移位的台部（130）第一弹性部分（120-1），其一端连接到台部部分，并且具有弹性以使台架部分在一个方向上移位; 连接第一弹性部分的另一端的驱动源装置（180），包括：第一施加装置（181），用于施加用于使载物台部分移位的激励力，使得载物台部分在一个方向上共振以所述平台部分和所述第一弹性部分确定的共振频率; 以及第二施加装置（182），用于施加驱动力，以逐步的方式或以连续方式移动所述台部分沿另一方向; 第二弹性部分（120-2），其一端连接到所述驱动源装置，并且具有弹性以沿所述一个方向移动所述平台部分; 第三弹性部分（120-3），其一端连接到第二弹性部分的另一端，并且具有弹性以使台架部分在另一方向上移位; 以及与第三弹性部的另一端连接的基部（110）。

52. 发明申请

US20090297951A1 ANODE FOR LITHIUM ION SECONDARY BATTERY, PRODUCTION METHOD THEREOF, AND LITHIUM ION SECONDARY BATTERY USING THE SAME 有权
标题翻译：用于锂离子二次电池的阳极，其生产方法和使用其的锂离子二次电池
公开(公告)号：US20090297951A1
公开(公告)日：2009-12-03
申请号：US12424881
申请日：2009-04-16
申请人： Shoo KATSURA , Jun Hisamoto , Toshiki Sato , Jun Suzuki , Shinichi Tanifuji
发明人： Shoo KATSURA , Jun Hisamoto , Toshiki Sato , Jun Suzuki , Shinichi Tanifuji
IPC分类号： H01M4/58 , B05D5/12 , C23C14/48
CPC分类号： H01M4/583 , C23C14/0635 , C23C14/18 , C23C14/3464 , H01M10/052
摘要： Disclosed is anode for use in a lithium ion secondary battery. The anode includes an anode current collector and an anode active material arranged thereon, in which the anode active material contains amorphous carbon and at least one metal dispersed in the amorphous carbon, and the at least one metal is selected from: 30 to 70 atomic percent of Si; and 1 to 40 atomic percent of Sn. The anode gives a lithium ion secondary battery that has a high charge/discharge capacity and is resistant to deterioration of its anode active material even after repetitive charge/discharge cycles.
摘要翻译：公开了用于锂离子二次电池的阳极。阳极包括阳极集电器和布置在其上的负极活性材料，其中阳极活性材料包含无定形碳和分散在无定形碳中的至少一种金属，并且所述至少一种金属选自：30至70原子％的Si; 和1〜40原子％的Sn。阳极产生具有高充电/放电容量的锂离子二次电池，并且即使在重复充电/放电循环之后也能耐受其负极活性物质的劣化。

53. 发明申请

US20090201753A1 Semiconductor memory device, control method therefor, and method for determining repair possibility of defective address 有权
标题翻译：半导体存储器件及其控制方法以及用于确定缺陷地址修复可能性的方法
公开(公告)号：US20090201753A1
公开(公告)日：2009-08-13
申请号：US12320892
申请日：2009-02-06
申请人： Yoshiro Riho , Jun Suzuki , Yasuhiro Matsumoto , Shuichi Kubouchi , Hiromasa Noda , Yasuji Koshikawa
发明人： Yoshiro Riho , Jun Suzuki , Yasuhiro Matsumoto , Shuichi Kubouchi , Hiromasa Noda , Yasuji Koshikawa
IPC分类号： G11C29/00 , G11C8/00 , G11C17/16
CPC分类号： G11C8/08 , G11C8/10 , G11C29/84
摘要： There are provided are a plurality of memory mats, a sub-word driver that accesses a normal memory cell irrespective of whether a row address to which access is requested is a defective address, a sub-word driver that accesses a redundant memory cell belonging to a memory mat different from the normal memory cell indicated by the row address, when the row address is a defective address. According to the present invention, the normal memory cell and a redundant memory cell belong to memory mats different to each other, and thus the normal memory cell can be accessed concurrently with determining operation of the repair determining circuit.
摘要翻译：提供有多个存储器垫，子字驱动器，其访问正常存储器单元，而不管请求访问的行地址是否是缺陷地址;子字驱动器，访问属于当行地址是缺陷地址时，由行地址指示的正常存储单元不同的存储器垫。根据本发明，正常存储单元和冗余存储单元属于彼此不同的存储器单元，从而可以在确定修复确定电路的操作的同时访问正常存储单元。

54. 发明申请

US20090181283A1 REGENERATION METHOD OF SEPARATOR FOR FUEL CELL, REGENERATED SEPARATOR FOR FUEL CELL AND FUEL CELL 审中-公开
标题翻译：燃料电池分离器再生方法，燃料电池和燃料电池再生分离器
公开(公告)号：US20090181283A1
公开(公告)日：2009-07-16
申请号：US12341116
申请日：2008-12-22
申请人： Toshiki Sato , Jun Hisamoto , Jun Suzuki , Yoshinori Ito , Shinichi Tanifuji
发明人： Toshiki Sato , Jun Hisamoto , Jun Suzuki , Yoshinori Ito , Shinichi Tanifuji
IPC分类号： H01M2/00 , B05D5/12 , C23C16/513 , B05D3/04 , C23C14/34
CPC分类号： H01M8/008 , C23C14/021 , C23C14/022 , C23C14/165 , C23C14/545 , C23C14/5806 , H01M8/0206 , H01M8/0228 , H01M2008/1095 , Y02W30/86
摘要： Disclosed herein is a method for regenerating a separator for a fuel cell in which the separator is composed of a substrate of Ti or Ti alloy and a conductive film formed thereon. The method includes a step of removing the conductive film from the separator for a fuel cell and also removing part of the surface of the substrate, thereby giving a regenerated substrate, and a step of forming a regenerated conductive film on the regenerated substrate. The conductive film and the regenerated conductive film are at least one species of noble metal or alloy thereof selected from the group of noble metals consisting of Au, Pt, and Pd, or an alloy composed of at least one species selected from the group of noble metals and one species selected from the group of metals consisting of Ti, Zr, Hf, Nb, Ta, and Si.
摘要翻译：本发明公开了一种燃料电池用隔膜的再生方法，其中隔板由Ti或Ti合金的基板和形成在其上的导电膜构成。该方法包括从燃料电池用隔板除去导电膜的步骤，还除去基板表面的一部分，从而得到再生基板，以及在再生基板上形成再生导电膜的工序。导电膜和再生导电膜是选自由Au，Pt和Pd组成的贵金属组的贵金属或其合金中的至少一种，或由至少一种选自贵金属金属和选自由Ti，Zr，Hf，Nb，Ta和Si组成的金属组中的一种。

55. 发明申请

US20090153720A1 IMAGE PICKUP APPARATUS AND DISPLAY CONTROL METHOD FOR THE SAME 有权
标题翻译：图像拾取装置及其显示控制方法
公开(公告)号：US20090153720A1
公开(公告)日：2009-06-18
申请号：US12331724
申请日：2008-12-10
申请人： Jun Suzuki , Yoshinobu Sato , Takeshi Ogawa
发明人： Jun Suzuki , Yoshinobu Sato , Takeshi Ogawa
IPC分类号： H04N5/222 , H04N5/232
CPC分类号： H04N5/23212 , G06T11/00 , H04N5/23293
摘要： An image pickup apparatus of the present invention comprises an image obtaining part configured to photoelectrically convert a first object image and a second object image formed by light fluxes divided by a pupil divider among light fluxes from an image pickup optical system to generate a first image and a second image, a displaying part configured to display images, and a processing part configured to cause the displaying part to display a superimposed image formed by superimposing the first and second images on each other.
摘要翻译：本发明的图像拾取装置包括图像获取部件，被配置为对来自摄像光学系统的光束中的由光瞳分割器分割的光束形成的第一物体图像和第二物体图像进行光电转换以产生第一图像，第二图像，被配置为显示图像的显示部分和被配置为使显示部分显示通过将第一和第二图像叠加而形成的叠加图像的处理部分。

56. 发明申请

US20080194220A1 FM receiver 有权
标题翻译： FM接收机
公开(公告)号：US20080194220A1
公开(公告)日：2008-08-14
申请号：US12068525
申请日：2008-02-07
申请人： Jun Suzuki
发明人： Jun Suzuki
IPC分类号： H04B1/16 , H04B1/10
CPC分类号： H04B1/10
摘要： An FM receiver that is suitable for reducing a transmission bandwidth WF of a bandpass filter to remove adjacent-channel interference, and increasing WF to prevent audio distortion. A detection output signal SOUT is inputted to an HPF 122 when a reception electric field strength signal SM-DC indicates an intermediate or stronger electric field. In a weak electric field, an AC component signal SM-AC, which is extracted from an intermediate signal SIF1 prior to detection and which has fewer high-pass noise components than SOUT, is inputted to the HPF 122. A control circuit 120 detects a case as an adjacent-channel interference state when a large amount of high-pass components passes through the HPF 122, and reduces WF of an IFBPF 70 in order to remove adjacent-channel interference. When a small amount of high-pass components is transmitted, WF is increased in order to minimize audio distortion.
摘要翻译：一种FM接收机，适于减少带通滤波器的传输带宽W SUB以消除相邻信道干扰，并增加W SUB以防止音频失真。当接收电场强度信号S M-DC <>表示中间或更强的电场时，检测输出信号S OUT OUT被输入到HPF 122。在弱电场中，在检测之前从中间信号S IF1＆lt; 1＆gt;提取并且具有较少的高通噪声分量的AC分量信号S M-AC＆lt; 输入到HPF 122.当大量的高通分量通过HPF 122时，控制电路120将情况检测为相邻信道干扰状态，并且减少W 为了去除相邻信道干扰，IFBPF70的。当发送少量的高通分量时，为了最小化音频失真，增加了W >F 。

57. 外观设计

USD569342S1 Voltage stabilizer 有权
标题翻译：稳压器
公开(公告)号：USD569342S1
公开(公告)日：2008-05-20
申请号：US29269539
申请日：2006-12-01
申请人： Jun Suzuki
设计人： Jun Suzuki

58. 发明申请

US20080026251A1 Insulating film formation method, semiconductor device, and substrate processing apparatus 有权
标题翻译：绝缘膜形成方法，半导体器件和衬底处理设备
公开(公告)号：US20080026251A1
公开(公告)日：2008-01-31
申请号：US11826495
申请日：2007-07-16
申请人： Jun Suzuki , Kenji Yoneda , Seiji Matsuyama
发明人： Jun Suzuki , Kenji Yoneda , Seiji Matsuyama
IPC分类号： H01L21/31 , B32B9/00 , C23C16/00
CPC分类号： H01L21/3141 , C23C16/405 , C23C16/45504 , C23C16/45546 , H01L21/02164 , H01L21/0217 , H01L21/02181 , H01L21/0228 , H01L21/31608 , H01L21/31645 , H01L21/3185
摘要： In an insulating film formation method, a cycle A in which O3 at a low flow rate is supplied onto a substrate and then O3 supplied is allowed to react with Hf on the substrate in a non-equilibrium state to form a hafnium oxide film is carried out M times (M≧1), and a cycle B in which O3 at a high flow rate is supplied onto the substrate and then O3 supplied is allowed to react with Hf on the substrate in an equilibrium state to form a hafnium oxide film is carried out N times (N≧1). These insulating film formation cycles are defined as one sequence. This sequence is repeated until a desired thickness is obtained, thereby forming a target insulating film.
摘要翻译：在绝缘膜形成方法中，将其中以低流量供给O 3 N的循环A供应到基板上，然后将所提供的O 3与Hf反应，在非平衡状态下形成氧化铪膜的衬底进行M次（M> = 1），并且以高流速将O 3 3的循环B供给到将底物和然后使O 3在平衡状态下与Hf在基板上反应以形成氧化铪膜N次（N> = 1）。这些绝缘膜形成循环被定义为一个顺序。重复该顺序，直到获得所需的厚度，从而形成目标绝缘膜。

59. 发明申请

US20080023669A1 Metal Surface Treatment Agent for Promoting Rubber-Metal Adhesion 审中-公开
标题翻译：金属表面处理剂促进橡胶金属粘附
公开(公告)号：US20080023669A1
公开(公告)日：2008-01-31
申请号：US11629948
申请日：2005-06-15
申请人： Toru Imori , Jun Suzuki , Kazunori Iida
发明人： Toru Imori , Jun Suzuki , Kazunori Iida
IPC分类号： C09K3/00 , C08K3/08
CPC分类号： D07B1/0666 , C08K5/16 , C09D4/00 , C09D7/63 , C09D183/08 , C23C2222/20 , C08G77/26
摘要： A surface treatment agent for metal is provided which is capable of improving the strength of adhesion between metal and rubber. A metal surface treatment agent for promoting adhesion between the metal and rubber comprising a cobalt or other metal compound and a silane coupling agent having a metal-capturing functional group in the molecule, and a metal surface treatment agent for promoting adhesion between the metal and rubber comprising a silane coupling agent having in the molecule a metal-capturing functional group with a captured metal such as a cobalt. The metal-capturing functional group is preferably an amino, amide or azole group.
摘要翻译：提供了一种能够提高金属与橡胶之间的粘合强度的金属表面处理剂。一种金属表面处理剂，用于促进包含钴或其它金属化合物的金属和橡胶之间的粘合性和在分子中具有金属捕获官能团的硅烷偶联剂，以及金属表面处理剂，用于促进金属和橡胶之间的粘合包括在分子中具有捕获金属如钴的金属捕获官能团的硅烷偶联剂。金属捕获官能团优选为氨基，酰胺或唑基。

60. 发明申请

US20070278589A1 Semiconductor device and fabrication method thereof 审中-公开
标题翻译：半导体器件及其制造方法
公开(公告)号：US20070278589A1
公开(公告)日：2007-12-06
申请号：US11654672
申请日：2007-01-18
申请人： Nobuyuki Tamura , Jun Suzuki
发明人： Nobuyuki Tamura , Jun Suzuki
IPC分类号： H01L31/00
CPC分类号： H01L21/823807 , H01L27/092 , H01L29/7843
摘要： A semiconductor device includes: an NMIS transistor on an NMIS region of a semiconductor substrate; a PMIS transistor on a PMIS region of the semiconductor substrate; and a stress dielectric film continuously provided on the semiconductor substrate to cover the NMIS transistor and PMIS transistor, the stress dielectric film having internal stress, wherein part of the stress dielectric film extending over the NMIS region has tensile internal stress compared to part of the stress dielectric film extending over the PMIS region.
摘要翻译：半导体器件包括：在半导体衬底的NMIS区域上的NMIS晶体管; 在半导体衬底的PMIS区域上的PMIS晶体管; 以及在半导体衬底上连续地设置以覆盖NMIS晶体管和PMIS晶体管的应力介电膜，该应力介电膜具有内部应力，其中在NMIS区域上延伸的应力介电膜的部分具有与部分应力相比的拉伸内应力电介质膜延伸在PMIS区域上。

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