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51. 发明申请

US20110012147A1 WAVELENGTH-CONVERTED SEMICONDUCTOR LIGHT EMITTING DEVICE INCLUDING A FILTER AND A SCATTERING STRUCTURE 审中-公开
标题翻译：波长转换半导体发光器件，包括滤光片和散射结构
公开(公告)号：US20110012147A1
公开(公告)日：2011-01-20
申请号：US12503506
申请日：2009-07-15
申请人： Serge J. Bierhuizen , Michael R. Krames
发明人： Serge J. Bierhuizen , Michael R. Krames
IPC分类号： H01L33/00
CPC分类号： H01L33/46 , G03B15/05 , G03B2215/0567 , G03B2215/0592 , H01L33/50 , H01L2933/0091
摘要： A semiconductor structure comprises a light emitting layer disposed between an n-type region and a p-type region. A wavelength converting material is disposed over the semiconductor structure. The wavelength converting material is configured to absorb light emitted by the semiconductor structure and emit light of a different wavelength. A filter configured to reflect blue ambient light is disposed over the wavelength converting material. A scattering structure is disposed over the wavelength converting layer. The scattering structure is configured to scatter light. In some embodiments, the scattering structure is a transparent material having a rough surface, containing non-wavelength-converting particles that appear substantially white in ambient light, or including both a rough surface and white particles.
摘要翻译：半导体结构包括设置在n型区域和p型区域之间的发光层。波长转换材料设置在半导体结构上。波长转换材料被配置为吸收由半导体结构发射的光并发射不同波长的光。布置成反射蓝色环境光的滤光器设置在波长转换材料上。散射结构设置在波长转换层上。散射结构被配置为散射光。在一些实施例中，散射结构是具有粗糙表面的透明材料，其包含在环境光中基本上呈白色的非波长转换颗粒，或包括粗糙表面和白色颗粒。

52. 发明申请

US20100176490A1 METHODS OF FORMING RELAXED LAYERS OF SEMICONDUCTOR MATERIALS, SEMICONDUCTOR STRUCTURES, DEVICES AND ENGINEERED SUBSTRATES INCLUDING SAME 有权
标题翻译：形成半导体材料的松散层的方法，半导体结构，器件和包括其中的工程衬底
公开(公告)号：US20100176490A1
公开(公告)日：2010-07-15
申请号：US12563953
申请日：2009-09-21
申请人： Fabrice LETERTRE , Bruce FAURE , Michael R. Krames , Nathan F. GARDNER
发明人： Fabrice LETERTRE , Bruce FAURE , Michael R. Krames , Nathan F. GARDNER
IPC分类号： H01L29/20 , H01L21/20
CPC分类号： H01L21/02639 , H01L21/02367 , H01L21/02389 , H01L21/02458 , H01L21/0254
摘要： Methods of fabricating relaxed layers of semiconductor materials include forming structures of a semiconductor material overlying a layer of a compliant material, and subsequently altering a viscosity of the compliant material to reduce strain within the semiconductor material. The compliant material may be reflowed during deposition of a second layer of semiconductor material. The compliant material may be selected so that, as the second layer of semiconductor material is deposited, a viscosity of the compliant material is altered imparting relaxation of the structures. In some embodiments, the layer of semiconductor material may comprise a III-V type semiconductor material, such as, for example, indium gallium nitride. Methods of fabricating semiconductor structures and devices are also disclosed. Novel intermediate structures are formed during such methods. Engineered substrates include a plurality of structures comprising a semiconductor material disposed on a layer of material exhibiting a changeable viscosity.
摘要翻译：制造半导体材料的松弛层的方法包括形成覆盖柔性材料层的半导体材料的结构，随后改变柔性材料的粘度以减小半导体材料内的应变。在沉积第二层半导体材料期间，柔性材料可以回流。可以选择柔性材料，使得当沉积第二层半导体材料时，改变柔性材料的粘度赋予结构松弛性。在一些实施例中，半导体材料层可以包括III-V型半导体材料，例如氮化铟镓。还公开了制造半导体结构和器件的方法。在这种方法中形成了新的中间结构。工程衬底包括多个结构，其包括设置在表现出可变粘度的材料层上的半导体材料。

53. 发明申请

US20100032793A1 METHODS FOR RELAXATION AND TRANSFER OF STRAINED LAYERS AND STRUCTURES FABRICATED THEREBY 有权
标题翻译：松弛和转移应变层和结构的方法
公开(公告)号：US20100032793A1
公开(公告)日：2010-02-11
申请号：US12341852
申请日：2008-12-22
申请人： Pascal Guenard , Bruce Faure , Fabrice Letertre , Michael R. Krames , Nathan F. Gardner , Melvin B. McLaurin
发明人： Pascal Guenard , Bruce Faure , Fabrice Letertre , Michael R. Krames , Nathan F. Gardner , Melvin B. McLaurin
IPC分类号： H01L27/00 , H01L21/02 , H01L21/46
CPC分类号： H01L33/0079 , H01L21/6835 , H01L31/1848 , H01L31/1852 , H01L31/1892 , H01L33/007 , H01L33/0095 , H01L33/025 , H01L2221/68359 , Y02E10/544 , Y02P70/521
摘要： The present invention provides methods for forming at least partially relaxed strained material layers on a target substrate. The methods include forming islands of the strained material layer on an intermediate substrate, at least partially relaxing the strained material islands by a first heat treatment, and transferring the at least partially relaxed strained material islands to the target substrate. The at least partial relaxation is facilitated by the presence of low-viscosity or compliant layers adjacent to the strained material layer. The invention also provides semiconductor structures having an at least partially relaxed strained material layer, and semiconductor devices fabricated using an at least partially relaxed strained material layer.
摘要翻译：本发明提供了在目标基底上形成至少部分松弛的应变材料层的方法。所述方法包括在中间衬底上形成应变材料层的岛，通过第一热处理至少部分地松弛应变材料岛，并将至少部分松弛的应变材料岛转移到目标衬底。通过存在与应变材料层相邻的低粘度或柔顺层，促进了至少部分松弛。本发明还提供了具有至少部分松弛的应变材料层的半导体结构，以及使用至少部分松弛的应变材料层制造的半导体器件。

54. 发明申请

US20090155943A1 Luminescent Ceramic Element For A Light Emitting Device 有权
标题翻译：发光陶瓷元件用于发光装置
公开(公告)号：US20090155943A1
公开(公告)日：2009-06-18
申请号：US12390564
申请日：2009-02-23
申请人： Michael R. Krames , Peter J. Schmidt
发明人： Michael R. Krames , Peter J. Schmidt
IPC分类号： H01L21/02
CPC分类号： C09K11/7774 , C04B35/44 , C04B35/597 , C04B35/63416 , C04B35/645 , C04B2235/3208 , C04B2235/3224 , C04B2235/3225 , C04B2235/3229 , C04B2235/5445 , C04B2235/6025 , C04B2235/6581 , C04B2235/662 , C09K11/0883 , C09K11/7721 , C09K11/7731 , C09K11/7734 , C09K11/7792 , H01L33/007 , H01L33/0079 , H01L33/32 , H01L33/502 , H01L33/505 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor structure including a light emitting layer disposed between an n-type region and a p-type region is attached to a compound substrate including a host which provides mechanical support to the device and a ceramic layer including a luminescent material. In some embodiments the compound substrate includes a crystalline seed layer on which the semiconductor structure is grown. The ceramic layer is disposed between the seed layer and the host. In some embodiments, the compound substrate is attached to the semiconductor structure after growth of the structure on a conventional growth substrate. In some embodiments, the compound substrate is spaced apart from the semiconductor structure and does not provide mechanical support to the structure. In some embodiments, the ceramic layer has a thickness less than 500 μm.
摘要翻译：包括设置在n型区域和p型区域之间的发光层的半导体结构附着到包括向器件提供机械支撑的主体的复合衬底和包括发光材料的陶瓷层。在一些实施方案中，化合物基底包括其上生长半导体结构的结晶晶种层。陶瓷层设置在种子层和主体之间。在一些实施方案中，在常规生长衬底上的结构生长之后，化合物衬底附着到半导体结构。在一些实施例中，复合衬底与半导体结构间隔开，并且不提供对结构的机械支撑。在一些实施例中，陶瓷层的厚度小于500μm。

55. 发明申请

US20080303039A1 Mount for a Semiconductor Light Emitting Device 有权
标题翻译：安装用于半导体发光器件
公开(公告)号：US20080303039A1
公开(公告)日：2008-12-11
申请号：US11760521
申请日：2007-06-08
申请人： M. George Craford , Michael R. Krames
发明人： M. George Craford , Michael R. Krames
IPC分类号： H01L33/00
CPC分类号： H01L33/62 , H01L33/642 , H01L33/647 , H01L2224/0554 , H01L2224/05568 , H01L2224/05573 , H01L2224/056 , H01L2224/16 , H01L2924/00014 , H01L2224/05599 , H01L2224/0555 , H01L2224/0556
摘要： A mount for a semiconductor device includes a carrier, at least two metal leads disposed on a bottom surface of the carrier, and a cavity extending through a thickness of the carrier to expose a portion of the top surfaces of the metal leads. A semiconductor light emitting device is positioned in the cavity and is electrically and physically connected to the metal leads. The carrier may be, for example, silicon, and the leads may be multilayer structures, for example a thin gold layer connected to a thick copper layer.
摘要翻译：用于半导体器件的安装件包括载体，设置在载体的底表面上的至少两个金属引线和延伸穿过载体厚度的空腔以暴露金属引线的顶表面的一部分。半导体发光器件位于空腔中，并且与金属引线电连接并物理连接。载体可以是例如硅，并且引线可以是多层结构，例如连接到厚铜层的薄金层。

56. 发明申请

US20080265263A1 Polarized Semiconductor Light Emitting Device 审中-公开
标题翻译：极化半导体发光器件
公开(公告)号：US20080265263A1
公开(公告)日：2008-10-30
申请号：US12171718
申请日：2008-07-11
申请人： Matthijs H. Keuper , Michael R. Krames , Gerd O. Mueller
发明人： Matthijs H. Keuper , Michael R. Krames , Gerd O. Mueller
IPC分类号： H01L33/00
CPC分类号： H04N9/3152 , H01L33/0004 , H01L33/16 , H01L33/18 , H01L33/32 , H01L33/44 , H01L33/507 , H01L33/60
摘要： A light emitting device includes a light emitting diode (LED), a concentrator element, such as a compound parabolic concentrator, and a wavelength converting material, such as a phosphor. The concentrator element receives light from the LED and emits the light from an exit surface, which is smaller than the entrance surface. The wavelength converting material is, e.g., disposed over the exit surface. The radiance of the light emitting diode is preserved or increased despite the isotropic re-emitted light by the wavelength converting material. In one embodiment, the polarized light from a polarized LED is provided to a polarized optical system, such as a microdisplay. In another embodiment, the orthogonally polarized light from two polarized LEDs is combined, e.g., via a polarizing beamsplitter, and is provided to non-polarized optical system, such as a microdisplay. If desired, a concentrator element may be disposed between the beamsplitter and the microdisplay.
摘要翻译：发光器件包括发光二极管（LED），诸如复合抛物面聚光器的聚光元件，以及诸如荧光体的波长转换材料。集中器元件从LED接收光，并从出射表面发射光，该出射表面小于入射面。波长转换材料例如设置在出射表面上。即使波长转换材料具有各向同性的再发射光，发光二极管的辐射也被保留或增加。在一个实施例中，来自偏振LED的偏振光被提供给诸如微显示器的偏振光学系统。在另一个实施例中，来自两个偏振LED的正交偏振光例如经由偏振分束器组合，并被提供给诸如微显示器之类的非偏振光学系统。如果需要，可以在分束器和微显示器之间设置集中器元件。

57. 发明授权

US07408201B2 Polarized semiconductor light emitting device 失效
标题翻译：极化半导体发光器件
公开(公告)号：US07408201B2
公开(公告)日：2008-08-05
申请号：US10804314
申请日：2004-03-19
申请人： Matthijs H. Keuper , Michael R. Krames , Gerd O. Mueller
发明人： Matthijs H. Keuper , Michael R. Krames , Gerd O. Mueller
IPC分类号： G02F1/133
CPC分类号： H04N9/3152 , H01L33/0004 , H01L33/16 , H01L33/18 , H01L33/32 , H01L33/44 , H01L33/507 , H01L33/60
摘要： A light emitting device includes a light emitting diode (LED), a concentrator element, such as a compound parabolic concentrator, and a wavelength converting material, such as a phosphor. The concentrator element receives light from the LED and emits the light from an exit surface, which is smaller than the entrance surface. The wavelength converting material is, e.g., disposed over the exit surface. The radiance of the light emitting diode is preserved or increased despite the isotropic re-emitted light by the wavelength converting material. In one embodiment, the polarized light from a polarized LED is provided to a polarized optical system, such as a microdisplay. In another embodiment, the orthogonally polarized light from two polarized LEDs is combined, e.g., via a polarizing beamsplitter, and is provided to non-polarized optical system, such as a microdisplay. If desired, a concentrator element may be disposed between the beamsplitter and the microdisplay.
摘要翻译：发光器件包括发光二极管（LED），诸如复合抛物面聚光器的聚光元件，以及诸如荧光体的波长转换材料。集中器元件从LED接收光，并从出射表面发射光，该出射表面小于入射面。波长转换材料例如设置在出射表面上。即使波长转换材料具有各向同性的再发射光，发光二极管的辐射也被保留或增加。在一个实施例中，来自偏振LED的偏振光被提供给诸如微显示器的偏振光学系统。在另一个实施例中，来自两个偏振LED的正交偏振光例如经由偏振分束器组合，并被提供给诸如微显示器之类的非偏振光学系统。如果需要，可以在分束器和微显示器之间设置集中器元件。

58. 发明授权

US07361938B2 Luminescent ceramic for a light emitting device 有权
标题翻译：用于发光器件的发光陶瓷
公开(公告)号：US07361938B2
公开(公告)日：2008-04-22
申请号：US10861172
申请日：2004-06-03
申请人： Gerd O. Mueller , Regina B. Mueller-Mach , Michael R. Krames , Peter J. Schmidt , Hans-Helmut Bechtel , Joerg Meyer , Jan de Graaf , Theo Arnold Kop
发明人： Gerd O. Mueller , Regina B. Mueller-Mach , Michael R. Krames , Peter J. Schmidt , Hans-Helmut Bechtel , Joerg Meyer , Jan de Graaf , Theo Arnold Kop
IPC分类号： H01L27/15 , H01L29/22
CPC分类号： H01L33/502 , C04B35/44 , C04B35/547 , C04B35/584 , C04B35/597 , C04B35/6268 , C04B35/64 , C04B35/645 , C04B2235/3213 , C04B2235/3217 , C04B2235/3224 , C04B2235/3225 , C04B2235/3229 , C04B2235/3286 , C04B2235/6027 , C04B2235/662 , C09K11/7774 , H01L33/007 , H01L33/0075 , H01L33/0079 , H01L33/06 , H01L33/12 , H01L33/32 , H01L33/50 , H01L33/501 , H01L33/505 , H01L33/508 , H01L33/54 , H01L33/56 , H01L33/58 , H01L33/62 , H01L33/641 , H01L33/644 , H01L2924/0002 , H01L2933/0041 , H01L2933/005 , H01L2933/0066 , H01L2933/0075 , H01L2924/00
摘要： A semiconductor light emitting device comprising a light emitting layer disposed between an n-type region and a p-type region is combined with a ceramic layer which is disposed in a path of light emitted by the light emitting layer. The ceramic layer is composed of or includes a wavelength converting material such as a phosphor. Luminescent ceramic layers according to embodiments of the invention may be more robust and less sensitive to temperature than prior art phosphor layers. In addition, luminescent ceramics may exhibit less scattering and may therefore increase the conversion efficiency over prior art phosphor layers.
摘要翻译：包括设置在n型区域和p型区域之间的发光层的半导体发光器件与设置在由发光层发射的光的路径中的陶瓷层组合。陶瓷层由磷光体等波长转换材料构成或包含波长转换材料。根据本发明的实施例的发光陶瓷层可以比现有技术的荧光体层更坚固并且对温度不太敏感。此外，发光陶瓷可能表现出更少的散射，因此可以提高现有技术荧光体层的转换效率。

59. 发明授权

US07064355B2 Light emitting diodes with improved light extraction efficiency 有权
公开(公告)号：US07064355B2
公开(公告)日：2006-06-20
申请号：US09880204
申请日：2001-06-12
申请人： Michael D. Camras , Michael R. Krames , Wayne L. Snyder , Frank M. Steranka , Robert C. Taber , John J. Uebbing , Douglas W. Pocius , Troy A. Trottier , Christopher H. Lowery , Gerd O. Mueller , Regina B. Mueller-Mach , Gloria E. Hofler
发明人： Michael D. Camras , Michael R. Krames , Wayne L. Snyder , Frank M. Steranka , Robert C. Taber , John J. Uebbing , Douglas W. Pocius , Troy A. Trottier , Christopher H. Lowery , Gerd O. Mueller , Regina B. Mueller-Mach , Gloria E. Hofler
IPC分类号： H01L33/00
CPC分类号： H01L33/58 , H01L33/20 , H01L33/405 , H01L33/505 , H01L33/60
摘要： Light emitting devices with improved light extraction efficiency are provided. The light emitting devices have a stack of layers including semiconductor layers comprising an active region. The stack is bonded to a transparent optical element having a refractive index for light emitted by the active region preferably greater than about 1.5, more preferably greater than about 1.8. A method of bonding a transparent optical element (e.g., a lens or an optical concentrator) to a light emitting device comprising an active region includes elevating a temperature of the optical element and the stack and applying a pressure to press the optical element and the light emitting device together. A block of optical element material may be bonded to the light emitting device and then shaped into an optical element. Bonding a high refractive index optical element to a light emitting device improves the light extraction efficiency of the light emitting device by reducing loss due to total internal reflection. Advantageously, this improvement can be achieved without the use of an encapsulant.

60. 发明授权

US06989555B2 Strain-controlled III-nitride light emitting device 有权
标题翻译：应变控制III族氮化物发光器件
公开(公告)号：US06989555B2
公开(公告)日：2006-01-24
申请号：US10830202
申请日：2004-04-21
申请人： Werner K. Goetz , Michael R. Krames , Anneli Munkholm
发明人： Werner K. Goetz , Michael R. Krames , Anneli Munkholm
IPC分类号： H01L29/24
CPC分类号： H01L33/32 , H01L33/08 , H01L33/12
摘要： In a III-nitride light emitting device, a ternary or quaternary light emitting layer is configured to control the degree of phase separation. In some embodiments, the difference between the InN composition at any point in the light emitting layer and the average InN composition in the light emitting layer is less than 20%. In some embodiments, control of phase separation is accomplished by controlling the ratio of the lattice constant in a relaxed, free standing layer having the same composition as the light emitting layer to the lattice constant in a base region. For example, the ratio may be between about 1 and about 1.01.
摘要翻译：在III族氮化物发光器件中，三元或四元发光层被配置为控制相分离程度。在一些实施例中，发光层中的任何点处的InN组成与发光层中的平均InN组成之间的差小于20％。在一些实施方案中，通过控制具有与发光层相同的组成的松弛的独立层中的晶格常数与基极区域中的晶格常数的比例来实现相分离的控制。例如，该比率可以在约1至约1.01之间。

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