专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

51. 发明申请

US20060083278A1 Method and structure for deep well structures for long wavelength active regions 失效
标题翻译：长波长活性区深井结构的方法和结构
公开(公告)号：US20060083278A1
公开(公告)日：2006-04-20
申请号：US10970528
申请日：2004-10-20
申请人： Michael Tan , Ashish Tandon , David Bour
发明人： Michael Tan , Ashish Tandon , David Bour
IPC分类号： H01S5/00
CPC分类号： H01S5/34 , B82Y20/00 , H01L33/06 , H01S5/183 , H01S5/3408 , H01S5/34313 , H01S5/34333
摘要： Subwells are added to quantum wells of light emitting semiconductor structures to shift their emission wavelengths to longer wavelengths. Typical applications of the invention are to InGaAs, InGaAsSb, InP and GaN material systems, for example.
摘要翻译：子阱被添加到发光半导体结构的量子阱中，以将其发射波长移动到更长的波长。本发明的典型应用是例如InGaAs，InGaAsSb，InP和GaN材料体系。

52. 发明申请

US20120258580A1 PLASMA-ASSISTED MOCVD FABRICATION OF P-TYPE GROUP III-NITRIDE MATERIALS 审中-公开
标题翻译： P型III型氮化物材料的等离子体辅助MOCVD制造
公开(公告)号：US20120258580A1
公开(公告)日：2012-10-11
申请号：US13413009
申请日：2012-03-06
申请人： Karl Brown , Kevin Griffin , David Bour , Olga Kryliouk
发明人： Karl Brown , Kevin Griffin , David Bour , Olga Kryliouk
IPC分类号： H01L21/205 , C23C16/56 , C23C16/50
CPC分类号： H01L21/0262 , C23C16/303 , C23C16/452 , C23C16/56 , H01L21/0237 , H01L21/0254 , H01L21/02579 , H01L33/007
摘要： The plasma-assisted metal-organic chemical vapor deposition (MOCVD) fabrication of a p-type group III-nitride material is described. For example, a method of fabricating a p-type group III-nitride material includes generating a nitrogen-based plasma. A nitrogen-containing species from the nitrogen-based plasma is reacted with a group III precursor and a p-type dopant precursor in a metal-organic chemical vapor deposition (MOCVD) chamber. A group III-nitride layer including p-type dopants is then formed above a substrate.
摘要翻译：描述了p型III族氮化物材料的等离子体辅助金属 - 有机化学气相沉积（MOCVD）制造。例如，制造p型III族氮化物材料的方法包括生成氮基等离子体。来自氮基等离子体的含氮物质与金属有机化学气相沉积（MOCVD）室中的III族前体和p型掺杂剂前体反应。然后在衬底上形成包括p型掺杂剂的III族氮化物层。

53. 发明授权

US07575982B2 Stacked-substrate processes for production of nitride semiconductor structures 失效
标题翻译：用于生产氮化物半导体结构的堆叠衬底工艺
公开(公告)号：US07575982B2
公开(公告)日：2009-08-18
申请号：US11404525
申请日：2006-04-14
申请人： David Bour , Sandeep Nijhawan , Lori Washington , Jacob Smith , David Eaglesham
发明人： David Bour , Sandeep Nijhawan , Lori Washington , Jacob Smith , David Eaglesham
IPC分类号： H01L21/30
CPC分类号： C23C16/481 , C23C16/303 , C23C16/45502 , C23C16/4583 , H01L21/0242 , H01L21/02458 , H01L21/0254 , H01L21/0262 , H01L33/007 , H01L33/0079
摘要： Methods are provided of fabricating compound nitride semiconductor structures. A group-III precursor and a nitrogen precursor are flowed into a processing chamber to deposit a first layer over a surface of a first substrate with a thermal chemical-vapor-deposition process. A second layer is deposited over a surface of a second substrate with the thermal chemical-vapor-deposition process using the first group-III precursor and the first nitrogen precursor. The first and second substrates are different outer substrates of a plurality of stacked substrates disposed within the processing chamber as a stack so that the first and second layers are deposited on opposite sides of the stack. Deposition of the first layer and deposition of the second layer are performed simultaneously.
摘要翻译：提供了制造复合氮化物半导体结构的方法。将III族前体和氮前体流入处理室中，以通过热化学气相沉积工艺在第一基板的表面上沉积第一层。使用第一组III前体和第一氮前体，通过热化学气相沉积工艺将第二层沉积在第二衬底的表面上。第一和第二基板是作为堆叠设置在处理室内的多个堆叠基板的不同的外部基板，使得第一和第二层沉积在堆叠的相对侧上。同时进行第一层的沉积和第二层的沉积。

54. 发明授权

US07470599B2 Dual-side epitaxy processes for production of nitride semiconductor structures 失效
标题翻译：用于生产氮化物半导体结构的双面外延工艺
公开(公告)号：US07470599B2
公开(公告)日：2008-12-30
申请号：US11404390
申请日：2006-04-14
申请人： Sandeep Nijhawan , David Eaglesham , Lori Washington , David Bour , Jacob Smith
发明人： Sandeep Nijhawan , David Eaglesham , Lori Washington , David Bour , Jacob Smith
IPC分类号： H01L21/30 , H01L21/46
CPC分类号： H01L33/007 , C30B25/02 , C30B29/403 , H01L21/0237 , H01L21/0242 , H01L21/02458 , H01L21/0254
摘要： Methods are provided of fabricating a nitride semiconductor structure. A group-III precursor and a nitrogen precursor are flowed into a processing chamber to deposit a first layer over one side of the substrate with a thermal chemical-vapor-deposition process. A second layer is similarly deposited over an opposite side of the substrate using the group-III precursor and the nitrogen precursor. The substrate is cooled after depositing the first and second layers without substantially deforming a shape of the substrate.
摘要翻译：提供了制造氮化物半导体结构的方法。将III族前体和氮前体流入处理室中，以通过热化学气相沉积工艺在衬底的一侧沉积第一层。类似地，使用III族前体和氮前体在衬底的相对侧上沉积第二层。在沉积第一层和第二层之后冷却衬底，而基本上不使形状变形。

55. 发明申请

US20070259504A1 Dislocation-specific lateral epitaxial overgrowth to reduce dislocation density of nitride films 失效
标题翻译：位错特异性侧向外延生长以减少氮化物膜的位错密度
公开(公告)号：US20070259504A1
公开(公告)日：2007-11-08
申请号：US11429084
申请日：2006-05-05
申请人： David Bour , Sandeep Nijhawan , Jacob Smith , Lori Washington
发明人： David Bour , Sandeep Nijhawan , Jacob Smith , Lori Washington
IPC分类号： C30B13/00 , H01L21/331 , H01L21/20
CPC分类号： C30B25/02 , C30B29/403 , H01L21/0237 , H01L21/0242 , H01L21/02458 , H01L21/0254 , H01L21/0262 , H01L21/02639 , H01L29/2003 , H01L33/007 , H01L33/025
摘要： In accordance with the present invention, improved methods for reducing the dislocation density of nitride epitaxial films are provided. Specifically, an in-situ etch treatment is provided to preferentially etch the dislocations of the nitride epitaxial layer to prevent threading of the dislocations through the nitride epitaxial layer. Subsequent to etching of the dislocations, an epitaxial layer overgrowth is performed. In certain embodiments, the etching of the dislocations occurs simultaneously with growth of the epitaxial layer. In other embodiments, a dielectric mask is deposited within the etch pits formed at the dislocations prior to the epitaxial layer overgrowth.
摘要翻译：根据本发明，提供了用于降低氮化物外延膜的位错密度的改进方法。具体地，提供了原位蚀刻处理以优先蚀刻氮化物外延层的位错，以防止通过氮化物外延层的位错穿透。在蚀刻位错之后，进行外延层过度生长。在某些实施例中，位错的蚀刻与外延层的生长同时发生。在其它实施例中，在外延层过度生长之前，在形成于位错处的蚀刻坑内沉积电介质掩模。

56. 发明申请

US20070254100A1 MOCVD reactor without metalorganic-source temperature control 审中-公开
标题翻译： MOCVD反应器无金属有机源温度控制
公开(公告)号：US20070254100A1
公开(公告)日：2007-11-01
申请号：US11411672
申请日：2006-04-26
申请人： Sandeep Nijhawan , Lori Washington , Jacob Smith , Gary Kwong , David Bour , David Eaglesham
发明人： Sandeep Nijhawan , Lori Washington , Jacob Smith , Gary Kwong , David Bour , David Eaglesham
IPC分类号： C23C16/00 , B05C11/00
CPC分类号： C23C16/303 , C23C16/4482 , C23C16/52
摘要： Methods and systems permit fabricating structures using liquid sources without active temperature control. A substrate is disposed within a substrate processing chamber. A liquid source of a group-III precursor is provided in a bubbler. A push gas is applied to the liquid source to drive the group-III precursor into a vaporizer. A carrier gas is flowed into the vaporizer. A flow of vaporized group-III precursor carried by the carrier gas is injected from the vaporizer into the processing chamber. A nitrogen precursor is flowed into the processing chamber. A group-III nitride layer is deposited over the substrate with a thermal chemical vapor deposition within the processing chamber using the vaporized group-III precursor and the nitrogen precursor.
摘要翻译：方法和系统允许使用没有主动温度控制的液体源制造结构。基板设置在基板处理室内。在起泡器中提供III族前体的液体源。推动气体被施加到液体源以驱动III族前体进入蒸发器。载气流入蒸发器。由载气携带的汽化的III族前体的流动从蒸发器注入到处理室中。氮气前体流入处理室。使用蒸发的III族前体和氮前体，在处理室内通过热化学气相沉积在衬底上沉积III族氮化物层。

57. 发明申请

US20070243652A1 Stacked-substrate processes for production of nitride semiconductor structures 失效
标题翻译：用于生产氮化物半导体结构的堆叠衬底工艺
公开(公告)号：US20070243652A1
公开(公告)日：2007-10-18
申请号：US11404525
申请日：2006-04-14
申请人： David Bour , Sandeep Nijhawan , Lori Washington , Jacob Smith , David Eaglesham
发明人： David Bour , Sandeep Nijhawan , Lori Washington , Jacob Smith , David Eaglesham
IPC分类号： H01L21/205 , H01L21/365
CPC分类号： C23C16/481 , C23C16/303 , C23C16/45502 , C23C16/4583 , H01L21/0242 , H01L21/02458 , H01L21/0254 , H01L21/0262 , H01L33/007 , H01L33/0079
摘要： Methods are provided of fabricating compound nitride semiconductor structures. A group-III precursor and a nitrogen precursor are flowed into a processing chamber to deposit a first layer over a surface of a first substrate with a thermal chemical-vapor-deposition process. A second layer is deposited over a surface of a second substrate with the thermal chemical-vapor-deposition process using the first group-III precursor and the first nitrogen precursor. The first and second substrates are different outer substrates of a plurality of stacked substrates disposed within the processing chamber as a stack so that the first and second layers are deposited on opposite sides of the stack. Deposition of the first layer and deposition of the second layer are performed simultaneously.
摘要翻译：提供了制造复合氮化物半导体结构的方法。将III族前体和氮前体流入处理室中，以通过热化学气相沉积工艺在第一基板的表面上沉积第一层。使用第一组III前体和第一氮前体，通过热化学气相沉积工艺将第二层沉积在第二衬底的表面上。第一和第二基板是作为堆叠设置在处理室内的多个堆叠基板的不同的外部基板，使得第一和第二层沉积在堆叠的相对侧上。同时进行第一层的沉积和第二层的沉积。

58. 发明申请

US20070091951A1 Gain-coupled distributed quantum cascade laser 失效
标题翻译：增益耦合分布式量子级联激光器
公开(公告)号：US20070091951A1
公开(公告)日：2007-04-26
申请号：US11246745
申请日：2005-10-07
申请人： David Bour , Scott Corzine
发明人： David Bour , Scott Corzine
IPC分类号： H01S5/00
CPC分类号： H01S5/20 , B82Y20/00 , H01S5/06213 , H01S5/1228 , H01S5/2004 , H01S5/3211 , H01S5/3422 , H01S5/34306
摘要： Purely gain-coupled diffraction gratings may be realized for use in QCLs and other edge emitting lasers that lack a typical p-n junction. The periodic, typically heavily n-doped regions of doped diffraction gratings are replaced with p-type regions having significantly lower doping.
摘要翻译：可以实现纯增益耦合衍射光栅用于QCL和其他缺少典型p-n结的边缘发射激光器。掺杂衍射光栅的周期性，典型地高n掺杂区域被具有显着更低掺杂的p型区域代替。

59. 发明授权

US07180923B2 Laser employing a zinc-doped tunnel-junction 有权
标题翻译：激光采用锌掺杂隧道结
公开(公告)号：US07180923B2
公开(公告)日：2007-02-20
申请号：US10367200
申请日：2003-02-13
申请人： David Bour , Chaokun Lin , Michael Tan , Bill Perez
发明人： David Bour , Chaokun Lin , Michael Tan , Bill Perez
IPC分类号： H01S5/00
CPC分类号： H01S5/18358 , H01S5/0421 , H01S5/305 , H01S5/3054 , H01S5/3072 , H01S5/3095 , H01S5/3235
摘要： An improved tunnel junction structure and a VCSEL that uses this structure is disclosed. The tunnel junction includes first, second, and third layers that include materials of the InP family of materials. The first layer is doped with n-type dopant species to a concentration of 1019 dopant atoms per cm3 or greater. The second layer is doped with Zn to a similar concentration and is in contact with the first layer. The interface between the first and second layers forms a tunnel junction. The third layer includes a material that retards the diffusion of Zn out of the second layer. The third layer preferably includes undoped AlInAs. The tunnel junction structure of the present invention can be utilized in a VCSEL having an active layer between first and second mirrors that are both constructed from n-type semiconductor layers.
摘要翻译：公开了一种改进的隧道结结构和使用该结构的VCSEL。隧道结包括第一层，第二层和第三层，包括InP材料系列的材料。第一层掺杂有n型掺杂剂物质，浓度为每厘米3或更大的10 19掺杂剂原子。第二层掺杂有类似浓度的Zn并与第一层接触。第一和第二层之间的界面形成隧道结。第三层包括阻止Zn扩散到第二层的材料。第三层优选包括未掺杂的AlInAs。本发明的隧道结结构可以用于具有由n型半导体层构成的第一和第二反射镜之间的有源层的VCSEL。

60. 发明申请

US20070036186A1 Nitride semiconductor vertical cavity surface emitting laser 失效
标题翻译：氮化物半导体垂直腔表面发射激光器
公开(公告)号：US20070036186A1
公开(公告)日：2007-02-15
申请号：US11203699
申请日：2005-08-15
申请人： Scott Corzine , David Bour
发明人： Scott Corzine , David Bour
IPC分类号： H01S5/00
CPC分类号： H01S5/0424 , B82Y20/00 , H01S5/18341 , H01S5/18369 , H01S5/18383 , H01S5/20 , H01S5/34333 , H01S2304/12
摘要： In one aspect, a VCSEL includes a base region that has a vertical growth part laterally adjacent a first optical reflector and a lateral growth part that includes nitride semiconductor material vertically over at least a portion of the first optical reflector. An active region has at least one nitride semiconductor quantum well vertically over at least a portion of the lateral growth part of the base region and includes a first dopant of a first electrical conductivity type. A contact region includes a nitride semiconductor material laterally adjacent the active region and a second dopant of a second electrical conductivity type opposite the first electrical conductivity type. A second optical reflector is vertically over the active region and forms with the first optical reflector a vertical optical cavity overlapping at least a portion of the at least one quantum well of the active region. A method of fabricating a VCSEL also is described.
摘要翻译：在一个方面，VCSEL包括具有垂直生长部分的横向邻近于第一光学反射器的基底区域和在第一光学反射体的至少一部分上方垂直包括氮化物半导体材料的横向生长部分。有源区域在基极区域的横向生长部分的至少一部分上垂直地具有至少一个氮化物半导体量子阱，并且包括第一导电类型的第一掺杂物。接触区域包括横向邻近有源区的氮化物半导体材料和与第一导电类型相反的第二导电类型的第二掺杂剂。第二光学反射器垂直于有源区域并且与第一光学反射器形成垂直的光学腔，其与有源区的至少一个量子阱的至少一部分重叠。还描述了制造VCSEL的方法。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式