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51. 发明授权

US07968438B2 Ultra-thin high-quality germanium on silicon by low-temperature epitaxy and insulator-capped annealing 有权
标题翻译：通过低温外延和绝缘体封端退火在硅上超薄的高品质锗
公开(公告)号：US07968438B2
公开(公告)日：2011-06-28
申请号：US11835855
申请日：2007-08-08
申请人： Sang M. Han , Qiming Li
发明人： Sang M. Han , Qiming Li
IPC分类号： H01L21/20 , H01L21/36
CPC分类号： H01L21/02664 , H01L21/02381 , H01L21/0245 , H01L21/02532 , H01L21/02546 , H01L21/02667
摘要： Exemplary embodiments provide semiconductor devices with a high-quality semiconductor material on a lattice mismatched substrate and methods for their manufacturing using low temperature growth techniques followed by an insulator-capped annealing process. The semiconductor material can have high-quality with a sufficiently low threading dislocation (TD) density, and can be effectively used for integrated circuit applications such as an integration of optically-active materials (e.g., Group III-V materials) with silicon circuitry. In an exemplary embodiment, the high-quality semiconductor material can include one or more ultra-thin high-quality semiconductor epitaxial layers/films/materials having a desired thickness on the lattice mismatched substrate. Each ultra-thin high-quality semiconductor epitaxial layer can be formed by capping a low-temperature grown initial ultra-thin semiconductor material, annealing the capped initial ultra-thin semiconductor material, and removing the capping layer.
摘要翻译：示例性实施例在晶格不匹配的衬底上提供具有高质量半导体材料的半导体器件，以及使用低温生长技术接着进行绝缘体封端退火工艺的制造方法。半导体材料可以具有足够低的穿透位错（TD）密度的高质量，并且可以有效地用于集成电路应用，例如光学活性材料（例如III-V族材料）与硅电路的集成。在示例性实施例中，高质量半导体材料可以包括在晶格失配衬底上具有期望厚度的一个或多个超薄高品质半导体外延层/薄膜/材料。每个超薄的高质量半导体外延层可以通过封装低温生长的初始超薄半导体材料，退火封装的初始超薄半导体材料和去除覆盖层来形成。

52. 发明授权

US07579263B2 Threading-dislocation-free nanoheteroepitaxy of Ge on Si using self-directed touch-down of Ge through a thin SiO2 layer 有权
标题翻译：使用Ge通过薄SiO 2层的自我定向触摸，Si上的Ge的穿线 - 无位错纳米外延
公开(公告)号：US07579263B2
公开(公告)日：2009-08-25
申请号：US10935228
申请日：2004-09-08
申请人： Sang Han , Qiming Li
发明人： Sang Han , Qiming Li
IPC分类号： H01L21/20 , C30B25/02
CPC分类号： H01L21/0245 , H01L21/02381 , H01L21/02521 , H01L21/02532 , H01L21/02642 , H01L21/02647
摘要： A method of forming a virtually defect free lattice mismatched nanoheteroepitaxial layer is disclosed. The method includes forming an interface layer on a portion of a substrate. A plurality of seed pads are then formed by self-directed touchdown by exposing the interface layer to a material comprising a semiconductor material. The plurality of seed pads, having an average width of about 1 nm to 10 nm, are interspersed within the interface layer and contact the substrate. An epitaxial layer is then formed by lateral growth of the seed pads over the interface layer.
摘要翻译：公开了形成几乎无缺陷的晶格失配的纳米外延层的方法。该方法包括在衬底的一部分上形成界面层。然后通过将界面层暴露于包含半导体材料的材料，通过自我定向的触地来形成多个种子垫。具有约1nm至10nm的平均宽度的多个种子垫分散在界面层内并与基底接触。然后通过界面层上的种子垫的横向生长形成外延层。

53. 发明授权

US06950748B2 Methods and systems for resistivity anisotropy formation analysis 有权
标题翻译：电阻率各向异性形成分析的方法和系统
公开(公告)号：US06950748B2
公开(公告)日：2005-09-27
申请号：US10604492
申请日：2003-07-25
申请人： Cheng Bing Liu , Qiming Li , Frank P. Shray , Jacques Tabanou
发明人： Cheng Bing Liu , Qiming Li , Frank P. Shray , Jacques Tabanou
IPC分类号： G01V3/20 , G01V3/38
CPC分类号： G01V3/20
摘要： Techniques for determining a formation property by simplifying various two-geological-layer or multi-geological-layer models into a multi-electrical-layer model. A volume fraction of a layer in a multi-electrical-layer model is determined for an anisotropic region (sliding window) of the formation. The multi-electrical-layer electrical model includes a relative-lower-resistivity layer and a relative-higher-resistivity layer. A high-resolution resistivity measurement is used in the determination and resistivities for the relative-lower-resistivity layer and for the relative-higher-resistivity layer based on the volume fraction and bulk resistivity measure ments of the anisotropic region are determined. The formation property is based on the volume fraction, the resistivity of the relative-lower-resistivity layer, the resistivity of the relative-higher-resistivity layer, a total porosity of the anisotropic region, and bulk resistivity measurements of the region.
摘要翻译：通过将各种地质层或多地质层模型简化为多电层模型来确定地层特性的技术。针对地层的各向异性区域（滑动窗口）确定多电层模型中的层的体积分数。多电层电气模型包括相对低电阻率层和相对较高电阻率的层。在相对较低电阻率层的确定和电阻率中使用高分辨率电阻率测量，并且基于各向异性区域的体积分数和体电阻率测量确定相对较高电阻率层。形成性质基于体积分数，相对低电阻率层的电阻率，相对高电阻率层的电阻率，各向异性区域的总孔隙率和该区域的体电阻率测量值。

54. 发明申请

US20050112696A1 Compositions, methods and assays related to secretase cleavage specificity 审中-公开
标题翻译：与分泌酶切割特异性相关的组合物，方法和测定
公开(公告)号：US20050112696A1
公开(公告)日：2005-05-26
申请号：US10721297
申请日：2003-11-25
申请人： Thomas Sudhof , Qiming Li
发明人： Thomas Sudhof , Qiming Li
IPC分类号： C07K16/18 , C12N15/85 , C12Q1/37 , G01N33/53 , G01N33/567 , G01N33/68
CPC分类号： C07K16/18 , C12Q1/37 , G01N33/6875 , G01N2333/96425 , G01N2500/02
摘要： Compositions and methods for determining modulators of beta-secretase activity and specificity of protease activity relative to the APP family of proteins are disclosed.
摘要翻译：公开了用于确定蛋白酶活性相对于蛋白质APP家族的β-分泌酶活性和特异性的调节剂的组合物和方法。

55. 发明申请

US20200229161A1 TRANSMISSION CONFIGURATION INDICATION (TCI) STATE SWITCHING FOR 5G NR 审中-公开
公开(公告)号：US20200229161A1
公开(公告)日：2020-07-16
申请号：US16829353
申请日：2020-03-25
申请人： Manasa Raghavan , Jie Cui , Yang Tang , Qiming Li , Zhibin Yu
发明人： Manasa Raghavan , Jie Cui , Yang Tang , Qiming Li , Zhibin Yu
IPC分类号： H04W72/04 , H04W72/08 , H04W24/10 , H04L5/00
摘要： A next-generation node B (gNB) configured for operation in a fifth-generation system (5GS) encode signalling for transmission to a user equipment (UE) indicating a Transmission Configuration Indication (TCI) state change to activate a new TCI state. A physical downlink control channel (PDCCH) is encoded in accordance with a highest aggregation level if the signalling indicating the TCI state change indicates activation of a new TCI state for the PDCCH. A physical downlink shared channel (PDSCH) is encoded in accordance with a lowest modulation and coding scheme (MCS) level if the signalling indicating the TCI state change indicates activation of a new TCI state for the PDSCH. After the TCI state change, reference signals (RS) are transmitted with a different spatial filter or different antenna ports demodulation of the PDCCH and PDSCH by the UE.

56. 发明授权

US08425681B1 Low-dislocation-density epitatial layers grown by defect filtering by self-assembled layers of spheres 有权
标题翻译：通过球体的自组装层的缺陷过滤生长的低位错密度的层叠层
公开(公告)号：US08425681B1
公开(公告)日：2013-04-23
申请号：US12388103
申请日：2009-02-18
申请人： George T. Wang , Qiming Li
发明人： George T. Wang , Qiming Li
IPC分类号： C30B21/04
CPC分类号： C30B25/183 , C30B29/403
摘要： A method for growing low-dislocation-density material atop a layer of the material with an initially higher dislocation density using a monolayer of spheroidal particles to bend and redirect or directly block vertically propagating threading dislocations, thereby enabling growth and coalescence to form a very-low-dislocation-density surface of the material, and the structures made by this method.
摘要翻译：一种使用单层球状颗粒以最初较高的位错密度在材料层顶部生长低位错密度材料的方法，用于弯曲和重定向或直接阻止垂直传播的穿透位错，从而使得生长和聚结形成非常接近的位错密度，材料的低位错密度表面，以及由该方法制成的结构。

57. 发明授权

US07745315B1 Highly aligned vertical GaN nanowires using submonolayer metal catalysts 有权
标题翻译：使用亚单层金属催化剂的高度对准的垂直GaN纳米线
公开(公告)号：US07745315B1
公开(公告)日：2010-06-29
申请号：US11866684
申请日：2007-10-03
申请人： George T. Wang , Qiming Li , J. Randall Creighton
发明人： George T. Wang , Qiming Li , J. Randall Creighton
IPC分类号： H01L21/205 , C30B25/00 , C30B29/38 , C30B29/60
CPC分类号： H01L21/0254 , C30B11/12 , C30B25/00 , C30B29/406 , C30B29/60 , H01L21/0242 , H01L21/02603 , H01L21/0262 , H01L21/02639 , H01L21/02645 , H01L21/02653 , Y10S977/762 , Y10S977/816 , Y10S977/891
摘要： A method for forming vertically oriented, crystallographically aligned nanowires (nanocolumns) using monolayer or submonolayer quantities of metal atoms to form uniformly sized metal islands that serve as catalysts for MOCVD growth of Group III nitride nanowires.
摘要翻译：使用单层或次单层数量的金属原子形成垂直取向的晶体取向的纳米线（纳米柱）的方法，以形成用作III族氮化物纳米线的MOCVD生长的催化剂的均匀尺寸的金属岛。

58. 发明授权

US07670933B1 Nanowire-templated lateral epitaxial growth of non-polar group III nitrides 有权
标题翻译：非极性III族氮化物的纳米线模板侧向外延生长
公开(公告)号：US07670933B1
公开(公告)日：2010-03-02
申请号：US11866748
申请日：2007-10-03
申请人： George T. Wang , Qiming Li , J. Randall Creighton
发明人： George T. Wang , Qiming Li , J. Randall Creighton
IPC分类号： H01L21/205 , C30B25/00 , C30B29/38 , C30B29/60
CPC分类号： H01L21/0242 , C30B25/005 , C30B25/02 , C30B25/20 , C30B29/403 , H01L21/02389 , H01L21/02433 , H01L21/02458 , H01L21/0254 , H01L21/02603 , H01L21/0262 , H01L21/02645 , H01L21/02647 , H01L21/02653 , Y10S117/902 , Y10S977/762 , Y10S977/816 , Y10S977/817 , Y10S977/821 , Y10S977/891
摘要： A method for growing high quality, nonpolar Group III nitrides using lateral growth from Group III nitride nanowires. The method of nanowire-templated lateral epitaxial growth (NTLEG) employs crystallographically aligned, substantially vertical Group III nitride nanowire arrays grown by metal-catalyzed metal-organic chemical vapor deposition (MOCVD) as templates for the lateral growth and coalescence of virtually crack-free Group III nitride films. This method requires no patterning or separate nitride growth step.
摘要翻译：使用来自III族氮化物纳米线的横向生长来生长高质量非极性III族氮化物的方法。纳米线模板侧向外延生长（NTLEG）的方法采用通过金属催化的金属有机化学气相沉积（MOCVD）生长的晶体取向的，基本上垂直的III族氮化物纳米线阵列作为实际无裂纹的侧向生长和聚结的模板 III族氮化物膜。该方法不需要图案化或分离氮化物生长步骤。

59. 发明申请

US20090224285A1 THREADING-DISLOCATION-FREE NANOHETEROEPITAXY OF Ge ON Si USING SELF-DIRECTED TOUCH-DOWN OF Ge THROUGH A THIN SiO2 LAYER 有权
标题翻译：使用自旋向下的Ge通过SiO 2层的Ge的线性无差异的NANOHETEROEPITAXY
公开(公告)号：US20090224285A1
公开(公告)日：2009-09-10
申请号：US12420389
申请日：2009-04-08
申请人： Sang HAN , Qiming Li
发明人： Sang HAN , Qiming Li
IPC分类号： H01L29/12 , H01L21/20
CPC分类号： H01L21/0245 , H01L21/02381 , H01L21/02521 , H01L21/02532 , H01L21/02642 , H01L21/02647
摘要： A method of forming a virtually defect free lattice mismatched nanoheteroepitaxial layer is disclosed. The method includes forming an interface layer on a portion of a substrate. A plurality of seed pads are then formed by self-directed touchdown by exposing the interface layer to a material comprising a semiconductor material. The plurality of seed pads, having an average width of about 1 nm to 10 nm, are interspersed within the interface layer and contact the substrate. An epitaxial layer is then formed by lateral growth of the seed pads over the interface layer.
摘要翻译：公开了形成几乎无缺陷的晶格失配的纳米外延层的方法。该方法包括在衬底的一部分上形成界面层。然后通过将界面层暴露于包含半导体材料的材料，通过自我定向的触地来形成多个种子垫。具有约1nm至10nm的平均宽度的多个种子垫分散在界面层内并与基底接触。然后通过界面层上的种子垫的横向生长形成外延层。

60. 发明授权

US07116166B2 High fidelity, high power switched amplifier 有权
标题翻译：高保真，高功率开关放大器
公开(公告)号：US07116166B2
公开(公告)日：2006-10-03
申请号：US10867598
申请日：2004-06-15
申请人： Juan Antonio Sabate , Richard S. Zhang , Luis Jose Garces , Paul Michael Szczesny , Qiming Li , William Frederick Wirth
发明人： Juan Antonio Sabate , Richard S. Zhang , Luis Jose Garces , Paul Michael Szczesny , Qiming Li , William Frederick Wirth
IPC分类号： H03F3/00 , H03F3/217
CPC分类号： G01R33/3852 , H03F1/0277 , H03F3/211 , H03F3/2173 , H03F3/2178 , H03F3/72
摘要： A gradient amplifier arrangement is described that comprises a gradient amplifier power stage. The device may be employed to provide a current to a gradient coil, as in a MRI system. The circuitry disclosed includes a series coupling of a first bridge amplifier operating at a first voltage, a second bridge amplifier operating at a second voltage, a third bridge amplifier operating at a third voltage, and a gradient amplifier control stage. The amplifiers may provide output voltages at different levels, and may be switched at different times and frequencies to provide a range of output voltage and current levels.
摘要翻译：描述了包括梯度放大器功率级的梯度放大器布置。该装置可用于向梯度线圈提供电流，如在MRI系统中。所公开的电路包括以第一电压工作的第一桥式放大器，以第二电压工作的第二桥式放大器，以第三电压工作的第三桥式放大器和梯度放大器控制级的串联耦合。放大器可以提供不同电平的输出电压，并且可以在不同的时间和频率下切换以提供输出电压和电流水平的范围。

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