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    • 54. 发明申请
    • POLYMERSOMES, COLLOIDOSOMES, LIPOSOMES, AND OTHER SPECIES ASSOCIATED WITH FLUIDIC DROPLETS
    • 聚合物,胶体,脂质体和其他与流体滴剂有关的物种
    • US20110305761A1
    • 2011-12-15
    • US12993205
    • 2009-06-04
    • Ho Cheung ShumDaeyeon LeeInsun YoonDavia A. WeitzJin-Woong Kim
    • Ho Cheung ShumDaeyeon LeeInsun YoonDavia A. WeitzJin-Woong Kim
    • A61K9/14C08G65/48
    • A61K47/34A61K9/1273A61K9/1277A61K9/16A61K9/501A61K9/5031A61K9/5089A61K47/6907A61K47/6915
    • The present invention relates generally to vesicles such as liposomes, colloidosomes, and polymersomes, as well as techniques for making and using such vesicles. In some cases, the vesicles may be at least partially biocompatible and/or biodegradable. The vesicles may be formed, according to one aspect, by forming a multiple emulsion comprising a first droplet surrounded by a second droplet, which in turn is surrounded by a third fluid, where the second droplet comprises lipids and/or polymers, and removing fluid from the second droplet, e.g., through evaporation or diffusion, until a vesicle is formed. In certain aspects, the size of the vesicle may be controlled, e.g., through osmolarity, and in certain embodiments, the vesicle may be ruptured through a change in osmolarity. In some cases, the vesicle may contain other species, such as fluorescent molecules, microparticles, pharmaceutical agents, etc., which may be released upon rupture. Yet other aspects of the invention are generally directed to methods of making such vesicles, kits involving such vesicles, or the like.
    • 本发明一般涉及囊泡,例如脂质体,胶体体和聚合物囊泡,以及制造和使用这些囊泡的技术。 在一些情况下,囊泡可以是至少部分生物相容的和/或可生物降解的。 根据一个方面,可以通过形成多个乳液来形成囊泡,所述多重乳液包括由第二液滴包围的第一液滴,第二液滴又由第三流体包围,其中第二液滴包括脂质和/或聚合物,以及除去流体 从第二液滴,例如通过蒸发或扩散,直到形成囊泡。 在某些方面,可以例如通过渗透压控制囊泡的尺寸,并且在某些实施方案中,泡囊可以通过渗透压的变化破裂。 在一些情况下,泡囊可以含有其它物质,例如荧光分子,微粒,药剂等,其可在破裂时释放。 本发明的其它方面通常涉及制备这种囊泡的方法,涉及这种囊泡的试剂盒等。
    • 55. 发明授权
    • Interframe wavelet coding apparatus and method capable of adjusting computational complexity
    • 能够调整计算复杂度的帧间小波编码装置和方法
    • US07991051B2
    • 2011-08-02
    • US10580103
    • 2004-05-13
    • Se-Yoon JeongKyu-Heon KimWonha KimJin-Woong Kim
    • Se-Yoon JeongKyu-Heon KimWonha KimJin-Woong Kim
    • H04N7/12
    • H04N19/615H04N19/122H04N19/13H04N19/139H04N19/172H04N19/1883H04N19/61H04N19/63H04N19/635
    • Provided is an inter-frame wavelet coding apparatus that can reduce the computation complexity of a decoder by adjusting a decomposition level and a filter length based on the information amount of a frame during wavelet transform and a method therefor. The inter-frame wavelet coding apparatus includes: a Motion Compensated Temporal Filtering (MCTF) unit for computing a motion vectors of a group of pictures (GOP) and filtering the GOP with respect to the temporal axis, to thereby obtain filtered frame; a wavelet transforming unit for performing spatial wavelet transform on the filtered frame and outputting a wavelet coefficient; a quantization unit for quantizing the wavelet coefficient; an entropy coding unit for entropy-coding the motion vector computed in the MCTF unit and the quantized wavelet coefficient, to thereby generate an entropy-coded bit stream; and a wavelet filter managing unit for selecting a decomposition level and a filter length for the wavelet transforming unit based on motion estimation information of the GOP video computed in the MCTF unit, wherein the decomposition level and the filter length are included in the entropy-coded bit stream.
    • 提供了一种帧间小波编码装置,其可以通过基于小波变换期间的帧的信息量调整分解水平和滤波器长度来降低解码器的计算复杂度及其方法。 帧间小波编码装置包括:运动补偿时间滤波(MCTF)单元,用于计算一组图像(GOP)的运动矢量并相对于时间轴对GOP进行滤波,从而获得滤波帧; 小波变换单元,用于对滤波后的帧进行空间小波变换,并输出小波系数; 用于量化小波系数的量化单元; 熵编码单元,用于对在MCTF单元中计算出的运动矢量进行熵编码和量化小波系数,从而生成熵编码比特流; 以及小波滤波器管理单元,用于基于在所述MCTF单元中计算出的GOP视频的运动估计信息来选择所述小波变换单元的分解电平和滤波器长度,其中所述分解电平和所述滤波器长度包括在所述熵编码 位流。
    • 57. 发明授权
    • Method for fabricating capacitor of semiconductor device
    • 制造半导体器件电容器的方法
    • US07666738B2
    • 2010-02-23
    • US11952767
    • 2007-12-07
    • Dong-Woo ShinHyung-Bok ChoiJong-Min LeeJin-Woong Kim
    • Dong-Woo ShinHyung-Bok ChoiJong-Min LeeJin-Woong Kim
    • H01L21/8242
    • H01L28/84H01L21/32155H01L28/91
    • The present invention relates to a method for fabricating a capacitor of a semiconductor device. The method includes the steps of: forming a first amorphous silicon layer doped with an impurity in a predetermined first doping concentration suppressing dopants from locally agglomerating; forming an impurity undoped second amorphous silicon layer on the first amorphous silicon layer in an in-situ condition; forming a storage node by patterning the first amorphous silicon layer and the second amorphous silicon layer; forming silicon grains on a surface of the storage node; and doping the impurity to the storage node and the silicon grains until reaching a second predetermined concentration for providing conductivity required by the storage node.
    • 本发明涉及半导体器件的电容器的制造方法。 该方法包括以下步骤:在预定的第一掺杂浓度抑制掺杂剂中形成掺杂有杂质的第一非晶硅层局部凝聚; 在原位条件下在第一非晶硅层上形成杂质未掺杂的第二非晶硅层; 通过图案化所述第一非晶硅层和所述第二非晶硅层来形成存储节点; 在所述存储节点的表面上形成硅晶粒; 以及将杂质掺杂到存储节点和硅晶粒直到达到第二预定浓度以提供存储节点所需的导电性。
    • 60. 发明授权
    • Method for fabricating capacitor of semiconductor device
    • 制造半导体器件电容器的方法
    • US07407854B2
    • 2008-08-05
    • US10749775
    • 2003-12-30
    • Dong-Woo ShinHyung-Bok ChoiJong-Min LeeJin-Woong Kim
    • Dong-Woo ShinHyung-Bok ChoiJong-Min LeeJin-Woong Kim
    • H01L21/8242
    • H01L28/84H01L21/32155H01L28/91
    • The present invention relates to a method for fabricating a capacitor of a semiconductor device. The method includes the steps of: forming a first amorphous silicon layer doped with an impurity in a predetermined first doping concentration suppressing dopants from locally agglomerating; forming an impurity undoped second amorphous silicon layer on the first amorphous silicon layer in an in-situ condition; forming a storage node by patterning the first amorphous silicon layer and the second amorphous silicon layer; forming silicon grains on a surface of the storage node; and doping the impurity to the storage node and the silicon grains until reaching a second predetermined concentration for providing conductivity required by the storage node.
    • 本发明涉及半导体器件的电容器的制造方法。 该方法包括以下步骤:在预定的第一掺杂浓度抑制掺杂剂中形成掺杂有杂质的第一非晶硅层局部凝聚; 在原位条件下在第一非晶硅层上形成杂质未掺杂的第二非晶硅层; 通过图案化所述第一非晶硅层和所述第二非晶硅层来形成存储节点; 在所述存储节点的表面上形成硅晶粒; 以及将杂质掺杂到存储节点和硅晶粒直到达到第二预定浓度以提供存储节点所需的导电性。