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51. 发明申请

US20050285102A1 Organic TFT and method of fabricating the same 有权
标题翻译：有机TFT及其制造方法
公开(公告)号：US20050285102A1
公开(公告)日：2005-12-29
申请号：US11158049
申请日：2005-06-22
申请人： Jae-Bon Koo , Min-Chul Suh , Yeon-Gon Mo
发明人： Jae-Bon Koo , Min-Chul Suh , Yeon-Gon Mo
IPC分类号： H01L21/786 , H01L21/00 , H01L29/08 , H01L51/05
CPC分类号： H01L51/0529
摘要： The present invention provides an organic thin film transistor and method for fabricating the same. The organic thin film transistor has a substrate and a gate electrode that is positioned on the substrate. A gate insulator has a stacked structure comprising an inorganic gate insulator and an organic gate insulator that are positioned on the gate electrode. An organic semiconductor layer is positioned on the gate insulator to overlap the gate electrode. Accordingly, an organic thin film transistor that has flexibility, decreased leakage current, and a low threshold is formed.
摘要翻译：本发明提供一种有机薄膜晶体管及其制造方法。有机薄膜晶体管具有基板和位于基板上的栅电极。栅极绝缘体具有堆叠结构，其包括位于栅电极上的无机栅极绝缘体和有机栅极绝缘体。有机半导体层位于栅极绝缘体上以与栅电极重叠。因此，形成了具有柔性，降低漏电流和低阈值的有机薄膜晶体管。

52. 发明申请

US20050191448A1 Donor sheet, method of manufacturing the same, method of manufacturing TFT using the donor sheet, and method of manufacturing flat panel display device using the donor sheet 有权
标题翻译：供体片，其制造方法，使用供体片的TFT的制造方法以及使用供体片的平板显示装置的制造方法
公开(公告)号：US20050191448A1
公开(公告)日：2005-09-01
申请号：US10995514
申请日：2004-11-24
申请人： Min-Chul Suh , Nam-Choul Yang , Jae-Bon Koo , Hye-Dong Kim , Ho-Kyoon Chung , Ul-Ho Lee
发明人： Min-Chul Suh , Nam-Choul Yang , Jae-Bon Koo , Hye-Dong Kim , Ho-Kyoon Chung , Ul-Ho Lee
IPC分类号： B82B1/00 , B41M5/30 , B41M5/382 , B41M5/395 , B82B3/00 , D03D1/00 , D06M11/00 , D06M13/00 , G02F1/136 , G09F9/00 , G09F9/30 , H01L21/00 , H01L21/02 , H01L21/205 , H01L21/336 , H01L21/8238 , H01L27/08 , H01L27/092 , H01L27/32 , H01L29/04 , H01L29/786 , H01L51/00 , H01L51/50 , H05B33/10 , H05B33/14
CPC分类号： B41M5/38207 , B41M5/395 , B82Y20/00 , B82Y30/00 , H01L27/3244 , H01L29/04 , H01L29/78681 , H01L29/7869 , H01L51/0013 , H01L51/0097 , H01L2251/5338 , H01L2251/5369 , Y10S977/773 , Y10T428/31504
摘要： A flexible flat panel display where nanoparticles are used for an active layer and the substrate is a flexible plastic, a method of manufacturing the same, a method of manufacturing a thin film transistor (TFT) using the donor sheet, and a method of manufacturing a flat panel display device using the donor sheet. In making the TFTs in the display, a donor sheet is used to transfer the nanoparticles from the sheet to the substrate. The donor sheet can be manufactured at room temperature. The donor sheet has a base film, and a transfer layer being disposed at one side of the base film and transferable, wherein the transfer layer has a plurality of nanoparticles which are arranged to be approximately parallel to one another.
摘要翻译：一种柔性平板显示器，其中纳米颗粒用于有源层，并且衬底是柔性塑料，其制造方法，使用该供体薄片制造薄膜晶体管（TFT）的方法，以及制造方法使用供体片的平板显示装置。在制造显示器中的TFT时，使用供体片将纳米颗粒从片材转移到衬底。供体片可以在室温下制造。供体片具有基膜，并且转移层设置在基膜的一侧并可转印，其中转印层具有被布置为彼此大致平行的多个纳米颗粒。

53. 发明申请

US20050189883A1 TFT, flat panel display device having the same, method of manufacturing TFT, method of manufacturing flat panel display device, and method of manufacturing donor sheet 失效
标题翻译： TFT，具有该TFT的平板显示装置，TFT的制造方法，平板显示装置的制造方法以及制造供体片的方法
公开(公告)号：US20050189883A1
公开(公告)日：2005-09-01
申请号：US10995537
申请日：2004-11-24
申请人： Min-Chul Suh , Nam-Choul Yang , Jae-Bon Koo , Hye-Dong Kim , Ho-Kyoon Chung , Ul-Ho Lee
发明人： Min-Chul Suh , Nam-Choul Yang , Jae-Bon Koo , Hye-Dong Kim , Ho-Kyoon Chung , Ul-Ho Lee
IPC分类号： H05B33/00 , B82B1/00 , G02F1/136 , G09F9/30 , G09G3/10 , G09G3/36 , H01L21/336 , H01L27/32 , H01L29/04 , H01L29/06 , H01L29/786 , H01L51/00 , H01L51/50 , H05B33/10 , H05B33/12 , H05B33/14
CPC分类号： H01L29/04 , B82Y20/00 , B82Y30/00 , H01L27/3244 , H01L29/66969 , H01L29/786 , H01L29/78681 , H01L29/78684 , H01L29/7869 , H01L51/0013 , H01L51/0097 , H01L2251/5338 , H01L2251/5369
摘要： A flexible flat panel display where nanoparticles are used for the active layer of the TFTs and the substrate is flexible and can be manufactured at room temperature, a flat panel display device having the same, a method of manufacturing a TFT, a method of manufacturing a flat panel display device, and a method of manufacturing a donor sheet. In making the TFTs in the display, a donor sheet is used to transfer the nanoparticles from the sheet to the substrate. The thin film transistor is placed on a substrate and includes a channel region which has at least one P-type or N-type nanoparticle arranged in a lengthwise direction, wherein the lengthwise direction of the P-type or N-type nanoparticles is parallel to a P-type or an N-type nanoparticle line partitioned off on the substrate.
摘要翻译：用于TFT和基板的有源层的纳米颗粒的柔性平板显示器是柔性的，并且可以在室温下制造，具有该平板显示装置的平板显示装置，TFT的制造方法，制造方法平板显示装置，以及制造供体薄片的方法。在制造显示器中的TFT时，使用供体片将纳米颗粒从片材转移到衬底。薄膜晶体管被放置在基板上，并且包括具有沿长度方向布置的至少一个P型或N型纳米颗粒的沟道区，其中P型或N型纳米颗粒的长度方向平行于在衬底上分隔的P型或N型纳米颗粒线。

54. 发明授权

US07973315B2 Thin film transistor, flat panel display device therewith, and method of manufacturing the thin film transistor 有权
标题翻译：薄膜晶体管，平板显示装置及其制造薄膜晶体管的方法
公开(公告)号：US07973315B2
公开(公告)日：2011-07-05
申请号：US11167157
申请日：2005-06-28
申请人： Jae-Bon Koo , Hye-Dong Kim , Min-Chul Suh
发明人： Jae-Bon Koo , Hye-Dong Kim , Min-Chul Suh
IPC分类号： H01L29/786
CPC分类号： H01L27/12 , H01L27/1248 , H01L29/78606
摘要： A thin film transistor that does not deform or exfoliate due to thermal or mechanical stress, a flat panel display having the same, and a method manufacturing the same, the thin film transistor including a substrate, a patterned buffer layer disposed on the substrate, a patterned active layer disposed on the buffer layer, a gate electrode insulated from the active layer, and a source electrode and a drain electrode that contact the active layer and are insulated from the gate electrode.
摘要翻译：一种由于热或机械应力而不会变形或剥落的薄膜晶体管，具有该薄膜晶体管的平板显示器及其制造方法，所述薄膜晶体管包括基板，设置在基板上的图案化缓冲层，设置在缓冲层上的图案化有源层，与有源层绝缘的栅极电极以及与有源层接触并与栅电极绝缘的源电极和漏电极。

55. 发明授权

US07645812B2 Thin film transistor and flat panel display including the same 有权
标题翻译：薄膜晶体管和平板显示器包括相同的
公开(公告)号：US07645812B2
公开(公告)日：2010-01-12
申请号：US11339657
申请日：2006-01-26
申请人： Taek Ahn , Min-Chul Suh , Jae-Bon Koo
发明人： Taek Ahn , Min-Chul Suh , Jae-Bon Koo
IPC分类号： A61K6/083
CPC分类号： H01L51/0038 , H01L51/0094 , H01L51/0541
摘要： A poly(para-phenylenevinylene) (PPV) compound for forming a buffer layer of a thin film transistor represented by where R is a C1-C20 silyl group substituted with cyclohexyl or phenyl, m is an integer from 2 to 4, and n is an integer from 1 to 3,000; a composition for forming a buffer layer of a thin film transistor that is used to form the compound represented by formula 1 and includes a halo precursor polymer, a photobase generator, and a solvent; a thin film transistor including a buffer layer which is manufactured using the PPV compound; and a flat panel display including the thin film transistor. A patterned buffer layer can be formed under an organic semiconductor layer of an organic TFT by photolithography patterning using the silicon-containing PPV precursor. Accordingly, the alignment of the organic semiconductor layer of the organic TFT can be improved, and thereby, the characteristics of the organic TFT can be improved.
摘要翻译：用于形成薄膜晶体管缓冲层的聚（对亚苯基亚乙烯基）（PPV））化合物，其中R为被环己基或苯基取代的C 1 -C 20甲硅烷基，m为2至4的整数，n为 1到3000的整数; 用于形成薄膜晶体管的缓冲层的组合物，其用于形成由式1表示的化合物，并且包括卤素前体聚合物，光碱产生剂和溶剂; 包括使用所述PPV化合物制造的缓冲层的薄膜晶体管; 以及包括薄膜晶体管的平板显示器。可以通过使用含硅PPV前体的光刻图案在有机TFT的有机半导体层下形成图案化缓冲层。因此，可以提高有机TFT的有机半导体层的对准，从而可以提高有机TFT的特性。

56. 发明授权

US07504659B2 Thin film transistor and flat panel display device including the same 有权
标题翻译：薄膜晶体管和包括其的平板显示装置
公开(公告)号：US07504659B2
公开(公告)日：2009-03-17
申请号：US11357004
申请日：2006-02-16
申请人： Tack Ahn , Min-Chul Suh , Jae-Bon Koo
发明人： Tack Ahn , Min-Chul Suh , Jae-Bon Koo
IPC分类号： H01L29/04
CPC分类号： H01L27/1214 , H01L27/12 , H01L27/283 , H01L29/78681 , H01L51/0545
摘要： A thin film transistor including a stop layer is disclosed. In one embodiment, the thin film transistor includes a substrate, a gate electrode formed on the substrate, a source electrode and a drain electrode insulated from the gate electrode, a semiconductor layer insulated from the gate electrode and having: a channel region which is electrically connected to the source electrode and the drain electrode, and a groove for separating at least the channel region from adjacent thin film transistors, and a stop layer formed below the semiconductor layer. According to one embodiment of the invention, a semiconductor layer can be easily patterned without using a dry or wet etching technique such as photolithography.
摘要翻译：公开了一种包括停止层的薄膜晶体管。在一个实施例中，薄膜晶体管包括衬底，形成在衬底上的栅电极，与栅电极绝缘的源电极和漏电极，与栅电极绝缘的半导体层，具有：电极连接到源电极和漏电极，以及用于至少从相邻薄膜晶体管分离沟道区的沟槽和形成在半导体层下面的阻挡层。根据本发明的一个实施例，半导体层可以容易地图案化，而不使用诸如光刻的干法或湿蚀刻技术。

57. 发明申请

US20080176349A1 TFT, flat panel display device having the same, method of manufacturing TFT, method of manufacturing flat panel display device, and method of manufacturing donor sheet 有权
标题翻译： TFT，具有该TFT的平板显示装置，TFT的制造方法，平板显示装置的制造方法以及制造供体片的方法
公开(公告)号：US20080176349A1
公开(公告)日：2008-07-24
申请号：US12004404
申请日：2007-12-21
申请人： Min-Chul Suh , Nam-Choul Yang , Jae-Bon Koo , Hye-Dong Kim , Ho-Kyoon Chung , Ul-Ho Lee
发明人： Min-Chul Suh , Nam-Choul Yang , Jae-Bon Koo , Hye-Dong Kim , Ho-Kyoon Chung , Ul-Ho Lee
IPC分类号： H01L21/36 , H01L51/56
CPC分类号： H01L29/04 , B82Y20/00 , B82Y30/00 , H01L27/3244 , H01L29/66969 , H01L29/786 , H01L29/78681 , H01L29/78684 , H01L29/7869 , H01L51/0013 , H01L51/0097 , H01L2251/5338 , H01L2251/5369
摘要： A flexible flat panel display where nanoparticles are used for the active layer of the TFTs and the substrate is flexible and can be manufactured at room temperature, a flat panel display device having the same, a method of manufacturing a TFT, a method of manufacturing a flat panel display device, and a method of manufacturing a donor sheet. In making the TFTs in the display, a donor sheet is used to transfer the nanoparticles from the sheet to the substrate. The thin film transistor is placed on a substrate and includes a channel region which has at least one P-type or N-type nanoparticle arranged in a lengthwise direction, wherein the lengthwise direction of the P-type or N-type nanoparticles is parallel to a P-type or an N-type nanoparticle line partitioned off on the substrate.
摘要翻译：用于TFT和基板的有源层的纳米颗粒的柔性平板显示器是柔性的并且可以在室温下制造，具有该平板显示装置的平板显示装置，TFT的制造方法，制造方法平板显示装置，以及制造供体薄片的方法。在制造显示器中的TFT时，使用供体片将纳米颗粒从片材转移到衬底。薄膜晶体管被放置在基板上，并且包括具有沿长度方向布置的至少一个P型或N型纳米颗粒的沟道区，其中P型或N型纳米颗粒的长度方向平行于在衬底上分隔的P型或N型纳米颗粒线。

58. 发明授权

US07381579B2 Donor sheet, method of manufacturing the same, method of manufacturing TFT using the donor sheet, and method of manufacturing flat panel display device using the donor sheet 有权
标题翻译：供体片，其制造方法，使用供体片的TFT的制造方法以及使用供体片的平板显示装置的制造方法
公开(公告)号：US07381579B2
公开(公告)日：2008-06-03
申请号：US10995514
申请日：2004-11-24
申请人： Min-Chul Suh , Nam-Choul Yang , Jae-Bon Koo , Hye-Dong Kim , Ho-Kyoon Chung , Ul-Ho Lee
发明人： Min-Chul Suh , Nam-Choul Yang , Jae-Bon Koo , Hye-Dong Kim , Ho-Kyoon Chung , Ul-Ho Lee
IPC分类号： H01L21/00
CPC分类号： B41M5/38207 , B41M5/395 , B82Y20/00 , B82Y30/00 , H01L27/3244 , H01L29/04 , H01L29/78681 , H01L29/7869 , H01L51/0013 , H01L51/0097 , H01L2251/5338 , H01L2251/5369 , Y10S977/773 , Y10T428/31504
摘要： A flexible flat panel display where nanoparticles are used for an active layer and the substrate is a flexible plastic, a method of manufacturing the same, a method of manufacturing a thin film transistor (TFT) using the donor sheet, and a method of manufacturing a flat panel display device using the donor sheet. In making the TFTs in the display, a donor sheet is used to transfer the nanoparticles from the sheet to the substrate. The donor sheet can be manufactured at room temperature. The donor sheet has a base film, and a transfer layer being disposed at one side of the base film and transferable, wherein the transfer layer has a plurality of nanoparticles which are arranged to be approximately parallel to one another.
摘要翻译：一种柔性平板显示器，其中纳米颗粒用于有源层，并且衬底是柔性塑料，其制造方法，使用该供体薄片制造薄膜晶体管（TFT）的方法，以及制造方法使用供体片的平板显示装置。在制造显示器中的TFT时，使用供体片将纳米颗粒从片材转移到衬底。供体片可以在室温下制造。供体片具有基膜，并且转移层设置在基膜的一侧并可转印，其中转印层具有被布置为彼此大致平行的多个纳米颗粒。

59. 发明授权

US07378711B2 TFT, flat panel display device having the same, method of manufacturing TFT, method of manufacturing flat panel display device, and method of manufacturing donor sheet 失效
公开(公告)号：US07378711B2
公开(公告)日：2008-05-27
申请号：US10995537
申请日：2004-11-24
申请人： Min-Chul Suh , Nam-Choul Yang , Jae-Bon Koo , Hye-Dong Kim , Ho-Kyoon Chung , Ul-Ho Lee
发明人： Min-Chul Suh , Nam-Choul Yang , Jae-Bon Koo , Hye-Dong Kim , Ho-Kyoon Chung , Ul-Ho Lee
IPC分类号： H01L27/01
CPC分类号： H01L29/04 , B82Y20/00 , B82Y30/00 , H01L27/3244 , H01L29/66969 , H01L29/786 , H01L29/78681 , H01L29/78684 , H01L29/7869 , H01L51/0013 , H01L51/0097 , H01L2251/5338 , H01L2251/5369
摘要： A flexible flat panel display where nanoparticles are used for the active layer of the TFTs and the substrate is flexible and can be manufactured at room temperature, a flat panel display device having the same, a method of manufacturing a TFT, a method of manufacturing a flat panel display device, and a method of manufacturing a donor sheet. In making the TFTs in the display, a donor sheet is used to transfer the nanoparticles from the sheet to the substrate. The thin film transistor is placed on a substrate and includes a channel region which has at least one P-type or N-type nanoparticle arranged in a lengthwise direction, wherein the lengthwise direction of the P-type or N-type nanoparticles is parallel to a P-type or an N-type nanoparticle line partitioned off on the substrate.

60. 发明授权

US07335919B2 Active matrix organic electroluminescent display device including organic thin film transistor and method of manufacturing the display device 有权
标题翻译：有源矩阵有机电致发光显示装置，包括有机薄膜晶体管及其制造方法
公开(公告)号：US07335919B2
公开(公告)日：2008-02-26
申请号：US11158064
申请日：2005-06-22
申请人： Jae-Bon Koo , Min-Chul Suh
发明人： Jae-Bon Koo , Min-Chul Suh
IPC分类号： H01L29/04
CPC分类号： H01L27/3274 , H01L27/12 , H01L27/1214 , H01L27/322 , H01L51/0053 , H01L51/0078 , H01L51/0541
摘要： Provided is an active matrix organic electroluminescent (EL) display device including an organic thin film transistor (TFT), preferably n-type, having a higher aperture ratio and easily realized in an array structure. The display device includes a facing electrode; an intermediate layer including at least a light emitting layer on the facing electrode; a pixel electrode formed on the intermediate layer; a first electrode located on the pixel electrode and insulated from the pixel electrode; a second electrode located on the pixel electrode and coupled with the pixel electrode; an n-type organic semiconductor layer contacting the first electrode and the second electrode; and a first gate electrode located on the n-type organic semiconductor layer and insulated from the first electrode, the second electrode, and the n-type organic semiconductor layer.
摘要翻译：本发明提供一种有机矩阵型有机电致发光（EL）显示装置，其包括具有较高开口率且容易实现阵列结构的有机薄膜晶体管（TFT），优选n型。显示装置包括面对电极; 至少包括面对电极上的发光层的中间层; 形成在中间层上的像素电极; 位于所述像素电极上且与所述像素电极绝缘的第一电极; 位于像素电极上并与像素电极耦合的第二电极; 接触第一电极和第二电极的n型有机半导体层; 以及位于n型有机半导体层上并与第一电极，第二电极和n型有机半导体层绝缘的第一栅电极。

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