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    • 53. 发明授权
    • Magnetoresistance effect device having hard magnetic film structural body
    • 具有硬磁性膜结构体的磁阻效应器件
    • US07116527B1
    • 2006-10-03
    • US08940020
    • 1997-09-29
    • Hideaki FukuzawaShin-ichi NakamuraYuzo KamiguchiHitoshi IwasakiAkio HoriSusumu Hashimoto
    • Hideaki FukuzawaShin-ichi NakamuraYuzo KamiguchiHitoshi IwasakiAkio HoriSusumu Hashimoto
    • G11B5/33
    • G11B5/3932B82Y25/00H01F10/132H01F10/16H01F10/3281H01L43/08
    • A base film of a hard magnetic film containing Co as a structural element has a crystal metal base film such as a Cr film formed on the main surface of a substrate and a reactive base film (mixing layer) formed between the substrate and the crystal metal base film and having a reactive amorphous layer containing a structural element of the substrate and a structural element of the crystal metal base film. A hard magnetic film containing Co as a structural element is formed on the crystal metal base film. With the crystal metal base film such as the Cr film formed on an amorphous layer, a hard magnetic film with a bi-crystal structure can be obtained with high reproducibility. With the hard magnetic film, magnetic characteristics such as coercive force Hc, residual magnetization Mr, saturated magnetization Ms, and square ratio S can be improved without need to use a thick base film. The hard magnetic film containing Co as a structural element is applied to a bias magnetic field applying film of a magnetoresistance effect device and a record layer of a magnetic record medium.
    • 含有Co作为结构元件的硬磁性膜的基膜具有形成在基板的主表面上的Cr膜等晶体金属基膜和在基板和结晶金属之间形成的反应性基膜(混合层) 并且具有包含基板的结构元件的反应性非晶层和晶体金属基膜的结构元件。 在晶体金属基膜上形成含有Co作为结构元素的硬磁性膜。 利用在非晶层上形成的Cr膜等晶体金属基膜,可以以高再现性获得具有双晶结构的硬磁性膜。 对于硬磁性膜,可以提高矫顽力Hc,剩余磁化强度Mr,饱和磁化强度Ms和平方比S等磁特性,而无需使用厚基膜。 含有Co作为结构元件的硬磁性膜被施加到磁阻效应装置的偏磁场施加膜和磁记录介质的记录层。
    • 55. 发明授权
    • Magnetoresistance effect element and magnetic recording apparatus
    • 磁电阻效应元件和磁记录装置
    • US5493465A
    • 1996-02-20
    • US209927
    • 1994-03-14
    • Yuzo KamiguchiSusumu HashimotoAtsuhito SawabeHitoshi IwasakiMasashi Sahashi
    • Yuzo KamiguchiSusumu HashimotoAtsuhito SawabeHitoshi IwasakiMasashi Sahashi
    • G01R33/09G11B5/39H01L43/08
    • B82Y25/00G01R33/093G11B5/3903H01L43/08
    • A magnetoresistance effect element has a pair of ferromagnetic layers with a middle non-magnetic metallic layer interposed therebetween. The middle non-magnetic metallic layer has lamination structure of non-magnetic metallic thin films formed of at least two kinds of non-magnetic metallic materials. In the lamination structure of the non-magnetic metallic thin film, Fermi energies of the non-magnetic metallic thin films disposed on interface sides of the ferromagnetic layers has a value closer to a Fermi energy in a direction of spin whose electron spin dependent mean free path is long among Fermi energies of the ferromagnetic layers. A non-magnetic metallic thin film is disposed between such two non-magnetic metallic thin films. Difference in Fermi energy between non-magnetic metallic thin films made of two kinds of non-magnetic metallic materials is 0.5 eV or more. By the use of such a middle non-magnetic metallic layer, while the thickness thereof is as thin as possible, exchange coupling between ferromagnetic layers can be small. Thus, resistance change sensitivity can be enhanced.
    • 磁阻效应元件具有介于其间的中间非磁性金属层的一对铁磁层。 中间非磁性金属层具有由至少两种非磁性金属材料形成的非磁性金属薄膜的叠层结构。 在非磁性金属薄膜的层压结构中,设置在铁磁层的界面侧上的非磁性金属薄膜的费米能量在旋转方向具有更接近费米能量的值,其电子自旋依赖平均自由度 在铁磁层的费米能量之间的路径很长。 这种非磁性金属薄膜之间设有非磁性金属薄膜。 由两种非磁性金属材料制成的非磁性金属薄膜之间的费米能的差异为0.5eV以上。 通过使用这样的中间非磁性金属层,虽然其厚度尽可能薄,铁磁层之间的交换耦合可以很小。 因此,可以提高电阻变化灵敏度。