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1. 发明申请

US20060198063A1 Hard magnetic film structural body, magnetoresistance effect device thereof, magnetic head, magnetic recording/reproducing head thereof, and magnetic record medium thereof, and magnetic storing apparatus thereof 有权
标题翻译：硬磁膜结构体，磁电阻效应器件，磁头，磁记录/再现头及其磁记录介质及其磁存储装置
公开(公告)号：US20060198063A1
公开(公告)日：2006-09-07
申请号：US11417195
申请日：2006-05-04
申请人： Hideaki Fukuzawa , Shin-ichi Nakamura , Yuzo Kamiguchi , Hitoshi Iwasaki , Akio Hori , Susumu Hashimoto
发明人： Hideaki Fukuzawa , Shin-ichi Nakamura , Yuzo Kamiguchi , Hitoshi Iwasaki , Akio Hori , Susumu Hashimoto
IPC分类号： G11B5/127 , G11B5/33
CPC分类号： G11B5/3932 , B82Y25/00 , H01F10/132 , H01F10/16 , H01F10/3281 , H01L43/08
摘要： A base film of a hard magnetic film containing Co as a structural element has a crystal metal base film such as a Cr film formed on the main surface of a substrate and a reactive base film (mixing layer) formed between the substrate and the crystal metal base film and having a reactive amorphous layer containing a structural element of the substrate and a structural element of the crystal metal base film. A hard magnetic film containing Co as a structural element is formed on the crystal metal base film. With the crystal metal base film such as the Cr film formed on an amorphous layer, a hard magnetic film with a bi-crystal structure can be obtained with high reproducibility. With the hard magnetic film, magnetic characteristics such as coercive force Hc, residual magnetization Mr, saturated magnetization Ms, and square ratio S can be improved without need to use a thick base film. The hard magnetic film containing Co as a structural element is applied to a bias magnetic field applying film of a magnetoresistance effect device and a record layer of a magnetic record medium.
摘要翻译：含有Co作为结构元件的硬磁性膜的基膜具有形成在基板主表面上的Cr膜等晶体金属基膜和在基板和结晶金属之间形成的反应性基膜（混合层）并且具有包含基板的结构元件的反应性非晶层和晶体金属基膜的结构元件。在晶体金属基膜上形成含有Co作为结构元素的硬磁性膜。利用在非晶层上形成的Cr膜等晶体金属基膜，可以以高再现性获得具有双晶结构的硬磁性膜。对于硬磁性膜，可以提高矫顽力Hc，剩余磁化强度Mr，饱和磁化强度Ms和平方比S等磁特性，而无需使用厚基膜。含有Co作为结构元件的硬磁性膜被施加到磁阻效应装置的偏磁场施加膜和磁记录介质的记录层。

2. 发明授权

US07336454B2 Magnetoresistance effect device having a bi-crystal structure composed of main grains each having a plurality of sub-grains 有权
标题翻译：具有由具有多个亚晶粒的主晶粒组成的双晶结构的磁阻效应器件
公开(公告)号：US07336454B2
公开(公告)日：2008-02-26
申请号：US11417195
申请日：2006-05-04
申请人： Hideaki Fukuzawa , Shin-ichi Nakamura , Yuzo Kamiguchi , Hitoshi Iwasaki , Akio Hori , Susumu Hashimoto
发明人： Hideaki Fukuzawa , Shin-ichi Nakamura , Yuzo Kamiguchi , Hitoshi Iwasaki , Akio Hori , Susumu Hashimoto
IPC分类号： G11B5/33
CPC分类号： G11B5/3932 , B82Y25/00 , H01F10/132 , H01F10/16 , H01F10/3281 , H01L43/08
摘要： A base film of a hard magnetic film containing Co as a structural element has a crystal metal base film such as a Cr film formed on the main surface of a substrate and a reactive base film (mixing layer) formed between the substrate and the crystal metal base film and having a reactive amorphous layer containing a structural element of the substrate and a structural element of the crystal metal base film. A hard magnetic film containing Co as a structural element is formed on the crystal metal base film. With the crystal metal base film such as the Cr film formed on an amorphous layer, a hard magnetic film with a bi-crystal structure can be obtained with high reproducibility. With the hard magnetic film, magnetic characteristics such as coercive force Hc, residual magnetization Mr, saturated magnetization Ms, and square ratio S can be improved without need to use a thick base film. The hard magnetic film containing Co as a structural element is applied to a bias magnetic field applying film of a magnetoresistance effect device and a record layer of a magnetic record medium.
摘要翻译：含有Co作为结构元件的硬磁性膜的基膜具有形成在基板的主表面上的Cr膜等晶体金属基膜和在基板和结晶金属之间形成的反应性基膜（混合层）并且具有包含基板的结构元件的反应性非晶层和晶体金属基膜的结构元件。在晶体金属基膜上形成含有Co作为结构元素的硬磁性膜。利用在非晶层上形成的Cr膜等晶体金属基膜，可以以高再现性获得具有双晶结构的硬磁性膜。对于硬磁性膜，可以提高矫顽力Hc，剩余磁化强度Mr，饱和磁化强度Ms和平方比S等磁特性，而无需使用厚基膜。含有Co作为结构元件的硬磁性膜被施加到磁阻效应装置的偏磁场施加膜和磁记录介质的记录层。

3. 发明授权

US07116527B1 Magnetoresistance effect device having hard magnetic film structural body 失效
标题翻译：具有硬磁性膜结构体的磁阻效应器件
公开(公告)号：US07116527B1
公开(公告)日：2006-10-03
申请号：US08940020
申请日：1997-09-29
申请人： Hideaki Fukuzawa , Shin-ichi Nakamura , Yuzo Kamiguchi , Hitoshi Iwasaki , Akio Hori , Susumu Hashimoto
发明人： Hideaki Fukuzawa , Shin-ichi Nakamura , Yuzo Kamiguchi , Hitoshi Iwasaki , Akio Hori , Susumu Hashimoto
IPC分类号： G11B5/33
CPC分类号： G11B5/3932 , B82Y25/00 , H01F10/132 , H01F10/16 , H01F10/3281 , H01L43/08
摘要： A base film of a hard magnetic film containing Co as a structural element has a crystal metal base film such as a Cr film formed on the main surface of a substrate and a reactive base film (mixing layer) formed between the substrate and the crystal metal base film and having a reactive amorphous layer containing a structural element of the substrate and a structural element of the crystal metal base film. A hard magnetic film containing Co as a structural element is formed on the crystal metal base film. With the crystal metal base film such as the Cr film formed on an amorphous layer, a hard magnetic film with a bi-crystal structure can be obtained with high reproducibility. With the hard magnetic film, magnetic characteristics such as coercive force Hc, residual magnetization Mr, saturated magnetization Ms, and square ratio S can be improved without need to use a thick base film. The hard magnetic film containing Co as a structural element is applied to a bias magnetic field applying film of a magnetoresistance effect device and a record layer of a magnetic record medium.
摘要翻译：含有Co作为结构元件的硬磁性膜的基膜具有形成在基板的主表面上的Cr膜等晶体金属基膜和在基板和结晶金属之间形成的反应性基膜（混合层）并且具有包含基板的结构元件的反应性非晶层和晶体金属基膜的结构元件。在晶体金属基膜上形成含有Co作为结构元素的硬磁性膜。利用在非晶层上形成的Cr膜等晶体金属基膜，可以以高再现性获得具有双晶结构的硬磁性膜。对于硬磁性膜，可以提高矫顽力Hc，剩余磁化强度Mr，饱和磁化强度Ms和平方比S等磁特性，而无需使用厚基膜。含有Co作为结构元件的硬磁性膜被施加到磁阻效应装置的偏磁场施加膜和磁记录介质的记录层。

4. 发明授权

US08958574B2 Strain and pressure sensing device, microphone, method for manufacturing strain and pressure sensing device, and method for manufacturing microphone 有权
标题翻译：应变和压力感测装置，麦克风，制造应变和压力感测装置的方法以及制造麦克风的方法
公开(公告)号：US08958574B2
公开(公告)日：2015-02-17
申请号：US13536002
申请日：2012-06-28
申请人： Hideaki Fukuzawa , Tatsuya Ohguro , Akihiro Kojima , Yoshiaki Sugizaki , Mariko Takayanagi , Yoshihiko Fuji , Akio Hori , Michiko Hara
发明人： Hideaki Fukuzawa , Tatsuya Ohguro , Akihiro Kojima , Yoshiaki Sugizaki , Mariko Takayanagi , Yoshihiko Fuji , Akio Hori , Michiko Hara
IPC分类号： H04R3/00 , G01L9/00 , H04R1/08 , B81C1/00 , H04R19/00 , H04R19/04 , H04R31/00
CPC分类号： B81C1/00158 , B81B2201/0264 , B81C1/00246 , B81C2203/0771 , G01L9/0042 , H04R1/08 , H04R19/005 , H04R19/04 , H04R31/00
摘要： According to one embodiment, a strain and pressure sensing device includes a semiconductor circuit unit and a sensing unit. The semiconductor circuit unit includes a semiconductor substrate and a transistor. The transistor is provided on a semiconductor substrate. The sensing unit is provided on the semiconductor circuit unit, and has space and non-space portions. The non-space portion is juxtaposed with the space portion. The sensing unit further includes a movable beam, a strain sensing element unit, and first and second buried interconnects. The movable beam has fixed and movable portions, and includes first and second interconnect layers. The fixed portion is fixed to the non-space portion. The movable portion is separated from the transistor and extends from the fixed portion into the space portion. The strain sensing element unit is fixed to the movable portion. The first and second buried interconnects are provided in the non-space portion.
摘要翻译：根据一个实施例，应变和压力感测装置包括半导体电路单元和感测单元。半导体电路单元包括半导体衬底和晶体管。晶体管设置在半导体衬底上。感测单元设置在半导体电路单元上，并且具有空间和非空间部分。非空间部分与空间部分并置。感测单元还包括可移动光束，应变传感元件单元以及第一和第二掩埋互连。可移动光束具有固定和可移动部分，并且包括第一和第二互连层。固定部固定在非空间部。可动部分与晶体管分离，并从固定部分延伸到空间部分。应变传感元件单元固定在可动部上。第一和第二掩埋互连件设置在非空间部分中。

5. 发明申请

US20130170669A1 STRAIN AND PRESSURE SENSING DEVICE, MICROPHONE, METHOD FOR MANUFACTURING STRAIN AND PRESSURE SENSING DEVICE, AND METHOD FOR MANUFACTURING MICROPHONE 有权
公开(公告)号：US20130170669A1
公开(公告)日：2013-07-04
申请号：US13536002
申请日：2012-06-28
申请人： Hideaki FUKUZAWA , Tatsuya Ohguro , Akihiro Kojima , Yoshiaki Sugizaki , Mariko Takayanagi , Yoshihiko Fuji , Akio Hori , Michiko Hara
发明人： Hideaki FUKUZAWA , Tatsuya Ohguro , Akihiro Kojima , Yoshiaki Sugizaki , Mariko Takayanagi , Yoshihiko Fuji , Akio Hori , Michiko Hara
IPC分类号： G01L9/00 , B81C1/00 , H04R1/08
CPC分类号： B81C1/00158 , B81B2201/0264 , B81C1/00246 , B81C2203/0771 , G01L9/0042 , H04R1/08 , H04R19/005 , H04R19/04 , H04R31/00
摘要： According to one embodiment, a strain and pressure sensing device includes a semiconductor circuit unit and a sensing unit. The semiconductor circuit unit includes a semiconductor substrate and a transistor. The transistor is provided on a semiconductor substrate. The sensing unit is provided on the semiconductor circuit unit, and has space and non-space portions. The non-space portion is juxtaposed with the space portion. The sensing unit further includes a movable beam, a strain sensing element unit, and first and second buried interconnects. The movable beam has fixed and movable portions, and includes first and second interconnect layers. The fixed portion is fixed to the non-space portion. The movable portion is separated from the transistor and extends from the fixed portion into the space portion. The strain sensing element unit is fixed to the movable portion. The first and second buried interconnects are provided in the non-space portion.

6. 发明授权

US6115216A Magnetoresistance effect type head and separate recording-reproducing type magnetic head 失效
标题翻译：磁阻效应型磁头和分离式记录再现型磁头
公开(公告)号：US6115216A
公开(公告)日：2000-09-05
申请号：US780328
申请日：1997-01-08
申请人： Hiroaki Yoda , Atsuhito Sawabe , Hitoshi Iwasaki , Naoyuki Inoue , Akio Hori
发明人： Hiroaki Yoda , Atsuhito Sawabe , Hitoshi Iwasaki , Naoyuki Inoue , Akio Hori
IPC分类号： G11B5/31 , G11B5/39 , G11B5/33 , G11B5/265
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3929 , G11B5/3967 , G11B2005/3996 , G11B5/3116 , G11B5/3163
摘要： A magnetoresistance effect type head comprises a magnetoresistance effect film having a pair of leads connected thereto and possessing a magnetic field responding part and a pair of upper and lower shield layers having a magnetoresistance effect film nipped therebetween through the medium of a magnetic gap-forming insulating film. This magnetoresistance effect type head satisfies the relations, W.sub.s
摘要翻译：磁阻效应型头包括具有连接到其上的一对引线并具有磁场响应部分的磁阻效应膜，以及一对具有磁阻效应膜的上下屏蔽层，其间通过磁隙形成绝缘体电影。该磁阻效应型磁头满足Ws

7. 发明授权

US06751846B2 Magnetic head manufacturing method 失效
标题翻译：磁头制造方法
公开(公告)号：US06751846B2
公开(公告)日：2004-06-22
申请号：US10401869
申请日：2003-03-31
申请人： Susumu Hashimoto , Michiko Hara , Tomohiko Nagata , Kohichi Tateyama , Masatoshi Yoshikawa , Takeo Sakakubo , Hiroaki Yoda , Akio Hori , Takashi Koizumi
发明人： Susumu Hashimoto , Michiko Hara , Tomohiko Nagata , Kohichi Tateyama , Masatoshi Yoshikawa , Takeo Sakakubo , Hiroaki Yoda , Akio Hori , Takashi Koizumi
IPC分类号： G11B5127
CPC分类号： G11B5/313 , G11B5/3116 , G11B5/3163 , G11B5/3967 , Y10T29/49044
摘要： A method for manufacturing a magnetic head which includes a lower write pole having a projection, an upper write pole having a projection opposed to the projection of the lower write pole, and a magnetic gap interposed between the projection of the upper write pole and the projection of the lower write pole, comprising: a first step of making the magnetic gap on the projection of the lower write pole; a second step of making a non-magnetic material layer on the lower write pole, the non-magnetic material layer having a projection on its top surface in positional alignment with the projection of the lower write pole; a third step of making a mask layer on the non-magnetic material layer, the mask layer having an opening in which the top surface of the projection of the non-magnetic material layer is exposed; a fourth step of making a curved recess in the non-magnetic material layer by isotropically etching the non-magnetic material layer through the opening of the mask layer; a fifth step of making an approximately tapered recess down from the bottom of the curved recess by anisotropically etching the non-magnetic material layer through the opening of the mask layer; and a sixth step of making the upper write pole by burying a magnetic material in the tapered recess and the curved recess is provided.
摘要翻译：一种用于制造磁头的方法，该磁头包括具有突出部的下部写入极，具有与下部写入磁极的突起相对的突出部的上部写入磁极，以及插入在上部写入磁极和突起之间的磁隙包括：使下部写入极的投影上的磁隙形成的第一步骤; 在下写入磁极上制作非磁性材料层的第二步骤，非磁性材料层在其顶表面上具有与下写入磁极的突起位置对准的突起; 在非磁性材料层上形成掩模层的第三步骤，所述掩模层具有露出所述非磁性材料层的突起的顶表面的开口; 通过所述掩模层的开口对所述非磁性材料层进行各向同性蚀刻来制造所述非磁性材料层中的弯曲凹部的第四工序; 第五步骤，通过通过掩模层的开口各向异性蚀刻非磁性材料层，从弯曲凹槽的底部向下形成大致锥形的凹陷; 并且提供通过将磁性材料埋入锥形凹部和弯曲凹部中来制造上部写入极的第六步骤。

8. 发明授权

US5633771A Magnetoresistance effect type head and separate recording-reproducing type magnetic head 失效
标题翻译：磁阻效应型磁头和分离式记录再现型磁头
公开(公告)号：US5633771A
公开(公告)日：1997-05-27
申请号：US314508
申请日：1994-09-28
申请人： Hiroaki Yoda , Atsuhito Sawabe , Hitoshi Iwasaki , Naoyuki Inoue , Akio Hori
发明人： Hiroaki Yoda , Atsuhito Sawabe , Hitoshi Iwasaki , Naoyuki Inoue , Akio Hori
IPC分类号： G11B5/31 , G11B5/39 , G11B5/265 , G11B5/127 , G11B5/29 , G11B5/33
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3929 , G11B5/3967 , G11B2005/3996 , G11B5/3116 , G11B5/3163
摘要： A magnetoresistance effect type head comprises a magnetoresistance effect film having a pair of leads connected thereto and possessing a magnetic field responding part and a pair of upper and lower shield layers having a magnetoresistance effect type head satisfies the relations, W.sub.s
摘要翻译：磁阻效应型头包括具有连接到其上并具有磁场响应部分的一对引线的磁阻效应膜和具有磁阻效应型头的一对上下屏蔽层满足关系Ws

9. 发明授权

US06362940B1 Recording-reproducing magnetic head 失效
标题翻译：记录再现磁头
公开(公告)号：US06362940B1
公开(公告)日：2002-03-26
申请号：US09520633
申请日：2000-03-07
申请人： Hiroaki Yoda , Atsuhito Sawabe , Hitoshi Iwasaki , Naoyuki Inoue , Akio Hori
发明人： Hiroaki Yoda , Atsuhito Sawabe , Hitoshi Iwasaki , Naoyuki Inoue , Akio Hori
IPC分类号： G11B539
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3116 , G11B5/3163 , G11B5/3929 , G11B5/3967 , G11B2005/3996
摘要： A recording-reproducing magnetic head comprising a magnetoresistance effect reproducing head and an inductive recording head. The magnetoresistance effect reproducing head having a magnetoresistance effect element and the inductive recording head having a lower magnetic core, an upper magnetic core, coils sandwiched between the lower and upper magnetic cores at their mid-parts, and a recording magnetic cores at leading end parts. The leading end parts of the lower and upper magnetic cores having a protruding part protruding to the recording magnetic gap layer and the upper magnetic core having a continuous magnetic body which extends from the protruding part to the mid-part. A center line of the protruding part of the lower magnetic core, which extends in a track length direction on a surface opposite a medium, intersecting the protruding part of the upper magnetic core.
摘要翻译：一种记录再现磁头，包括磁阻效应再现头和感应记录头。具有磁阻效应元件的磁电阻效应再现头和具有下磁芯，上磁芯，夹在下磁芯和上磁心之间的线圈的感应记录头及其前端部的记录磁芯。下磁芯和上磁芯的前端部具有突出部分，突出部分到记录磁隙层，上磁芯具有从突出部分延伸到中间部分的连续磁体。下磁芯的突出部分的中心线，其在与介质相对的表面上的轨道长度方向上延伸，与上磁芯的突出部分相交。

10. 发明授权

US6056996A Magnetoresistance effect type head and separate recording-reproducing type magnetic head 失效
标题翻译：磁阻效应型磁头和分离式记录再现型磁头
公开(公告)号：US6056996A
公开(公告)日：2000-05-02
申请号：US358465
申请日：1999-07-22
申请人： Hiroaki Yoda , Atsuhito Sawabe , Hitoshi Iwasaki , Naoyuki Inoue , Akio Hori
发明人： Hiroaki Yoda , Atsuhito Sawabe , Hitoshi Iwasaki , Naoyuki Inoue , Akio Hori
IPC分类号： G11B5/31 , G11B5/39 , B05D5/12
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3929 , G11B5/3967 , G11B2005/3996 , G11B5/3116 , G11B5/3163
摘要： A magnetoresistance effect type head comprises a magnetoresistance effect film having a pair of leads connected thereto and possessing a magnetic field responding part and a pair of upper and lower shield layers having a magnetoresistance effect film nipped therebetween through the medium of a magnetic gap-forming insulating film. This magnetoresistance effect type head satisfies the relations, W.sub.s
摘要翻译：磁阻效应型头包括具有连接到其上的一对引线并具有磁场响应部分的磁阻效应膜，以及一对具有磁阻效应膜的上下屏蔽层，其间通过磁隙形成绝缘体电影。该磁阻效应型磁头满足Ws

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