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51. 发明专利

JP2007074002A Semiconductor device 审中-公开
标题翻译：半导体器件
公开(公告)号：JP2007074002A
公开(公告)日：2007-03-22
申请号：JP2006340395
申请日：2006-12-18
申请人： Hitachi Ltd , 株式会社日立製作所
发明人： KOYAMA KAZUHIRO , MORI MUTSUHIRO , KOBAYASHI HIDEO , SAITO KATSUAKI , NISHIMURA YOSHITAKA
IPC分类号： H01L29/739 , H01L29/78
摘要： PROBLEM TO BE SOLVED: To achieve IGBT having a high withstand voltage, a low on-voltage, and a wide area of safe operation. SOLUTION: In IGBT having at least a p+n-pn+ structure from a collector side to an emitter side, and an n layer having high concentration compared with an n- layer between the n- layer and a p layer, an n layer having the further high concentration compared with the n layer is formed between the n- layer and the p layer. Since an avalanche is induced in the n layer having the high concentration, an area of safe operation is expanded. COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：实现具有高耐压，低导通电压和广泛的安全操作区域的IGBT。解决方案：在从集电极侧到发射极侧至少具有p + n-pn +结构的IGBT和与n层和ap层之间的n层相比具有高浓度的n层的情况下，n 在n层和p层之间形成具有与n层相比更高浓度的层。由于在具有高浓度的n层中引起雪崩，所以安全操作的区域扩大。版权所有（C）2007，JPO＆INPIT

52. 发明专利

JP2006230198A Mos rectifying device 有权
标题翻译： MOS整修装置
公开(公告)号：JP2006230198A
公开(公告)日：2006-08-31
申请号：JP2006152961
申请日：2006-06-01
申请人： Hitachi Car Eng Co Ltd , Hitachi Ltd , 株式会社日立カーエンジニアリング , 株式会社日立製作所
发明人： IWAMURA MASAHIRO , MORI MUTSUHIRO , KANAZAWA HIROYUKI , MASUMOTO MASATOSHI , HIKITA SAKAE
IPC分类号： H02M7/219 , H02M7/12
CPC分类号： Y02T10/92
摘要： PROBLEM TO BE SOLVED: To monitor the stator voltage output of an alternating-current motor to appropriately perform output control.
SOLUTION: A MOS-type rectifying bridge and a separately provided rectifying circuit convert the stator voltage of the alternating-current motor into a direct-current voltage and the size of the voltage is determined, and whether the magnitude of the voltage is large or small, and whether the voltage is overvoltage or undervoltage, whereby the voltage can be used as the monitor by controlling the drive circuit of the MOS-type rectifying bridge.
COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：监视交流电动机的定子电压输出以适当地进行输出控制。解决方案：MOS型整流桥和单独提供的整流电路将交流电动机的定子电压转换为直流电压，并确定电压的大小，以及电压的大小是否为大或小，以及电压是否过电压或欠压，由此通过控制MOS型整流桥的驱动电路可以将电压用作监视器。版权所有（C）2006，JPO＆NCIPI

53. 发明专利

JP2005192394A Driving device of semiconductor element and its control method 审中-公开
标题翻译：半导体元件的驱动装置及其控制方法
公开(公告)号：JP2005192394A
公开(公告)日：2005-07-14
申请号：JP2005039944
申请日：2005-02-17
申请人： Hitachi Ltd , 株式会社日立製作所
发明人： MIYAZAKI HIDEKI , SUZUKI KATSUNORI , TATENO KOJI , SAKANO JUNICHI , IWAMURA MASAHIRO , MORI MUTSUHIRO
IPC分类号： H02M1/00 , H02M1/08 , H02M7/48 , H03K17/08 , H03K17/695
摘要： PROBLEM TO BE SOLVED: To provide a driving device and its control method for suppressing surge voltage generated in a means or in the case of conducting a current through a power semiconductor element. SOLUTION: The driving device of the power semiconductor element conducting or interrupting the main current is provided with a first resistance variable means for changing a first resister in accordance with control voltage, and a second resistance variable means for changing a second resistor in accordance with voltage between first/second terminals. Either one of the voltage of a control power source or the voltage between the first/second terminals is divided by the first/second resistor. Additionally, the divided voltage is applied to a control gate terminal when the main current is conducted or interrupted. COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：解决的问题：提供一种用于抑制在装置中产生的浪涌电压或者在通过功率半导体元件导通电流的情况下的驱动装置及其控制方法。解决方案：导通或中断主电流的功率半导体元件的驱动装置设置有用于根据控制电压改变第一电阻器的第一电阻可变装置和用于改变第二电阻器的第二电阻变化装置根据第一/第二端子之间的电压。控制电源的电压或第一/第二端子之间的电压中的任一个被第一/第二电阻器分压。此外，当主电流被导通或中断时，分压电压被施加到控制栅极端子。版权所有（C）2005，JPO＆NCIPI

54. 发明专利

JP2014011213A Diode and power conversion device using the same 有权
标题翻译：二极管和功率转换装置使用它
公开(公告)号：JP2014011213A
公开(公告)日：2014-01-20
申请号：JP2012144895
申请日：2012-06-28
申请人： Hitachi Ltd , 株式会社日立製作所
发明人： ISHIMARU TETSUYA , MORI MUTSUHIRO , WATANABE SATOSHI
IPC分类号： H01L29/861 , H01L29/06 , H01L29/868
摘要： PROBLEM TO BE SOLVED: To provide a diode capable of obtaining high recovery breakdown resistance due to a simple structure, and a power conversion device using the same.SOLUTION: A semiconductor substrate 1 in a diode comprises: an anode p layer AP in contact with a principal surface 10 of an anode side; an n-drift layer NM adjacent to the anode p layer AP; a cathode n layer in contact with a principal surface 20 of a cathode side and having a higher impurity concentration than the n-drift layer NM; and a termination p layer TP in contact with the principal surface of the cathode side.
摘要翻译：要解决的问题：提供一种由于结构简单而能够获得高恢复击穿电阻的二极管和使用该二极管的功率转换装置。解决方案：二极管中的半导体衬底1包括：阳极p层AP，其与阳极侧的主表面10; 邻近阳极p层AP的n漂移层NM; 与阴极侧的主表面20接触且具有比n漂移层NM更高的杂质浓度的阴极n层; 以及与阴极侧的主表面接触的端接p层TP。

55. 发明专利

JP2013026365A Semiconductor device and power conversion device using the same 有权
标题翻译：使用相同的半导体器件和功率转换器件
公开(公告)号：JP2013026365A
公开(公告)日：2013-02-04
申请号：JP2011158595
申请日：2011-07-20
申请人： Hitachi Ltd , 株式会社日立製作所
发明人： WATANABE SATOSHI , SHIRAISHI MASAKI , SUZUKI HIROSHI , MORI MUTSUHIRO
IPC分类号： H01L29/739 , H01L21/336 , H01L29/423 , H01L29/78
CPC分类号： H01L29/7397 , H01L29/0696 , H01L29/407 , H01L29/66348
摘要： PROBLEM TO BE SOLVED: To provide an IGBT of low loss, high breakdown voltage, which can easily control dV/dt of output voltage, and can be easily manufactured.SOLUTION: The semiconductor device includes a first semiconductor layer of first conductivity type, a second semiconductor layer of second conductivity type present on the surface of the first semiconductor layer, a trench formed on the surface of the first semiconductor layer, a semiconductor protruding part on the surface of the first semiconductor layer, a third semiconductor layer formed on the surface of the semiconductor protruding part, a fourth semiconductor layer on the surface of the third semiconductor layer, a gate insulating layer provided along an inner wall of the trench, a first interlayer insulating layer provided along the inner wall of the trench, a first conductive layer which faces the fourth semiconductor layer by way of the gate insulating layer, a second conductive layer of the first interlayer insulating layer, a second interlayer insulating layer that covers the surface of the second conductive layer, a third conductive layer which is formed on the surface of the third semiconductor layer and the fourth semiconductor layer and connected electrically to the fourth semiconductor layer, a contact part which connects the third conductive layer and the third semiconductor layer, and a fourth conductive layer formed on the surface of the second semiconductor layer. A part of the surface of the semiconductor protruding part is the first semiconductor layer.
摘要翻译：要解决的问题：提供低损耗，高击穿电压的IGBT，其可以容易地控制输出电压的dV / dt，并且可以容易地制造。解决方案：半导体器件包括第一导电类型的第一半导体层，存在于第一半导体层的表面上的第二导电类型的第二半导体层，形成在第一半导体层的表面上的沟槽，半导体在第一半导体层的表面上的突出部分，形成在半导体突出部分的表面上的第三半导体层，在第三半导体层的表面上的第四半导体层，沿着沟槽的内壁设置的栅极绝缘层沿着沟槽的内壁设置的第一层间绝缘层，通过栅极绝缘层面向第四半导体层的第一导电层，第一层间绝缘层的第二导电层，第二层间绝缘层，第二层间绝缘层，覆盖第二导电层的表面，形成在表面上的第三导电层并且与第四半导体层电连接，连接第三导电层和第三半导体层的接触部分和形成在第二半导体层的表面上的第四导电层。半导体突出部的表面的一部分是第一半导体层。版权所有（C）2013，JPO＆INPIT

56. 发明专利

JP2008145899A Semiconductor device and plasma display device using the same 有权
标题翻译：半导体器件和使用其的等离子体显示器件
公开(公告)号：JP2008145899A
公开(公告)日：2008-06-26
申请号：JP2006335230
申请日：2006-12-13
申请人： Hitachi Ltd , 株式会社日立製作所
发明人： NAGASE TAKUO , MORI MUTSUHIRO
IPC分类号： G09G3/20 , G09G3/288 , G09G3/291 , G09G3/294 , G09G3/296 , G09G3/298 , H04N5/66
CPC分类号： G09G3/2965
摘要： PROBLEM TO BE SOLVED: To provide an AC type plasma display (PDP) device reducing power consumption and cost. SOLUTION: The device is driven by fixing an electrode on one side of a panel to a certain potential and alternately applying positive and negative voltages to an electrode on the other side of the panel in a period when light emission of an AC type PDP is sustained, and IGBTs are used as switch elements. A single driving system using IGBTs as switch elements can simultaneously reduce loss of a driving circuit of the AC type PDP and the number of components, which have not been achieved by conventional techniques. COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供一种降低功耗和成本的AC型等离子体显示器（PDP）装置。解决方案：通过将面板的一侧上的电极固定到一定电位来驱动该装置，并且在AC型发光的时段期间交替地向面板另一侧的电极施加正电压和负电压 PDP是持续的，IGBT用作开关元件。使用IGBT作为开关元件的单个驱动系统可以同时减少AC型PDP的驱动电路的损耗以及尚未通过常规技术实现的部件数量。版权所有（C）2008，JPO＆INPIT

57. 发明专利

JP2007243212A Semiconductor device and power converter using it 审中-公开
标题翻译：半导体器件和功率转换器
公开(公告)号：JP2007243212A
公开(公告)日：2007-09-20
申请号：JP2007117928
申请日：2007-04-27
申请人： Hitachi Ltd , 株式会社日立製作所
发明人： MORI MUTSUHIRO , KOYAMA KAZUHIRO , NISHIMURA YOSHITAKA , SAITO KATSUAKI , MASUDA KOTARO , KONO YASUHIKO
IPC分类号： H01L29/78 , H01L29/739
摘要： PROBLEM TO BE SOLVED: To achieve both reduction of losses of semiconductor switching elements and securing of short circuit durability of a power converter using the element. SOLUTION: The semiconductor switching element has an emitter structure which accumulates electric charges on the emitter side and realizes high conductivity, and an IGBT structure with a low implanted p-layer which realizes low switching losses on the collector side. The maximum value of carrier concentration in the p-layer on the collector side is 10 to 100 times larger than that of an n-layer adjacent to the p-layer. COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：实现半导体开关元件的损耗的降低和确保使用该元件的功率转换器的短路耐久性。解决方案：半导体开关元件具有在发射极侧积聚电荷并实现高导电性的发射极结构以及具有低注入p层的IGBT结构，其在集电极侧实现低开关损耗。集电极侧的p层的载流子浓度的最大值比与p层相邻的n层的载流子浓度的最大值大10倍〜100倍。版权所有（C）2007，JPO＆INPIT

58. 发明专利

JP2007115946A Power module, power conversion device, and on-vehicle electrical machinery system 有权
标题翻译：电力模块，动力转换装置和车载电机系统
公开(公告)号：JP2007115946A
公开(公告)日：2007-05-10
申请号：JP2005306820
申请日：2005-10-21
申请人： Hitachi Ltd , 株式会社日立製作所
发明人： INABA MASAMITSU , AZUMA KATSUNORI , MORI MUTSUHIRO , NAKATSU KINYA
IPC分类号： H01L25/07 , B60L11/14 , H01L25/18 , H02M7/48 , H02M7/5387 , H02P27/06
CPC分类号： H01L2224/48111 , H01L2224/49111 , H01L2924/1305 , H01L2924/13055 , H01L2924/13091 , H01L2924/19107 , H01L2924/30107 , Y02T10/642 , Y02T10/7077 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To provide a power module which is capable of reducing inductance around its output terminal and furthermore reducing a surge voltage, and to provide a power conversion device and an on-vehicle electrical machinery system. SOLUTION: In the power module, an anode-side emitter conductor 3 connected to the emitter electrode of an anode-side power semiconductor device Mpu is electrically connected to an output terminal U with two or more aluminum wires 7, a cathode-side collector conductor 4 connected to the collector electrode of a cathode-side power semiconductor device Mnu is electrically connected to the output terminal U with two or more aluminum wires 9, and the anode-side emitter conductor 3 connected to the emitter electrode of the anode-side power semiconductor device Mpu is electrically connected with two or more aluminum wires 8 to the cathode-side collector conductor 4 connected to the collector electrode of the cathode-side power semiconductor device Mnu. COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：提供能够降低其输出端子周围的电感并进一步降低浪涌电压的电源模块，以及提供电力转换装置和车载电机系统。解决方案：在功率模块中，连接到阳极侧功率半导体器件Mpu的发射极的阳极侧发射极导体3通过两根或多根铝线7电连接到输出端U，与阴极侧功率半导体器件Mnu的集电极连接的侧面集电体导体4通过两根以上的铝线9与输出端子U电连接，阳极侧发射极导体3与阳极的发射电极连接侧功率半导体器件Mpu与两根以上的铝线8电连接到与阴极侧功率半导体元件Mnu的集电极连接的阴极侧集电体导体4。版权所有（C）2007，JPO＆INPIT

59. 发明专利

JP2005328690A Dynamo-electric machine for vehicle 审中-公开
标题翻译：汽车电动机
公开(公告)号：JP2005328690A
公开(公告)日：2005-11-24
申请号：JP2005033760
申请日：2005-02-10
申请人： Hitachi Ltd , 株式会社日立製作所
发明人： SHIRAKAWA SHINJI , MORI MUTSUHIRO , INABA MASAMITSU , YAMAUCHI TATSUMI , IWAMURA MASAHIRO , MASUNO KEIICHI , TSUCHIYA MASANORI
IPC分类号： B60L9/18 , H02J7/14 , H02K11/00 , H02M7/5387
CPC分类号： F02N11/04 , B60K6/26 , B60K6/48 , B60W10/08 , F02D2041/2075 , F02N11/0814 , F02N11/0859 , F02N2011/0896 , H01L24/36 , H01L24/40 , H01L24/41 , H01L2224/32225 , H01L2224/40225 , H01L2224/4103 , H01L2924/00014 , H01L2924/13055 , H01L2924/13091 , H02J7/1492 , H02M7/003 , Y02T10/6221 , Y02T10/7005 , H01L2924/00 , H01L2224/37099
摘要： PROBLEM TO BE SOLVED: To provide a dynamo-electric machine for vehicle, having the same constitution as that of a conventional machine and mounted on the dynamo-electric machine body of an inverter apparatus. SOLUTION: The dynamo-electric machine for vehicle has a dynamo-electric machine body 1 and the inverter apparatus 50 mounted on the dynamo-electric machine body 1, with the inverter apparatus 50 being provided with a module section 52 having a conversion circuit 55, and a control section 51 for controlling the operation of the conversion circuit 55; and the conversion circuit 55 comprises a plurality of electrical parallel connections, formed by electrical series connections of P-channel MOSFETs 64 disposed on the high-potential side and N-channel MOSFETs 65 disposed on the low-potential side. The requirement of the machine is obtained by controlling the power supplied from a battery 150 or the power supplied to the battery 150. COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：提供一种具有与常规机器相同的结构并安装在逆变器装置的发电机主体上的用于车辆的发电机。解决方案：车用发电机具有发电机主体1和安装在发电机主体1上的逆变器装置50，逆变器装置50设置有具有转换的模块部分52 电路55和用于控制转换电路55的操作的控制部分51; 并且转换电路55包括通过设置在高电位侧的P沟道MOSFET64和设置在低电位侧的N沟道MOSFET 65的电串联连接形成的多个电并联连接。机器的要求是通过控制从电池150提供的电力或提供给电池150的电力来获得的。（C）2006年，JPO＆NCIPI

60. 发明专利

JP2003347549A Semiconductor device and power conversion equipment using the same 审中-公开
标题翻译：使用相同的半导体器件和功率转换器件
公开(公告)号：JP2003347549A
公开(公告)日：2003-12-05
申请号：JP2002158510
申请日：2002-05-31
申请人： Hitachi Ltd , 株式会社日立製作所
发明人： MORI MUTSUHIRO , KOYAMA KAZUHIRO , NISHIMURA YOSHITAKA , SAITO KATSUAKI , MASUDA KOTARO , KONO YASUHIKO
IPC分类号： H01L29/786 , H01L29/739 , H01L29/78 , H02M7/5387
摘要： PROBLEM TO BE SOLVED: To reduce a loss of a semiconductor switching element and to secure a short circuit bearing amount of power conversion equipment using the element. SOLUTION: In the semiconductor switching element, an emitter structure where a charge is accumulated and conduction can be made high is given on an emitter side and an IGBT structure in which the switching loss can be reduced and which has a p-layer of low injection is given on a collector side. A maximum value of carrier concentration in the p-layer on the collector side is 10 to 100 times as much as that of an n-layer adjacent to the p-layer. COPYRIGHT: (C)2004,JPO

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