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51. 发明专利

JPS63134596A GAS SOURCE MBE DEVICE 失效
公开(公告)号：JPS63134596A
公开(公告)日：1988-06-07
申请号：JP27652386
申请日：1986-11-21
申请人： HITACHI LTD
发明人： KANETOMO MASABUMI , YAMAGUCHI SUMIO , SHIIKI MASATOSHI , KANEHISA OSAMU , YAMAMOTO AKIRA
IPC分类号： C30B23/08 , H01L21/203
摘要： PURPOSE:To efficiently lead a gas introduced into a vacuum chamber on a substrate and speed up a crystal growth rate, by providing a reflecting plate having a specific position and direction below blowout holes provided at the tip of gas-introducing part of a gas cell. CONSTITUTION:A substrate 43 attached to a holder 42 in a vacuum vessel 41 is arranged downward and a gas cell is in the position opposite to the substrate 43. There is a gas blowout part 45 at the tip of a gas introducing pipe 44 and a blowout holes 46 and reflecting plate 47 are arranged therein. A raw material gas introduced from a gas introducing bomb 48 to direction of the arrow 49 enters the blowout part 45 while repeatedly reflecting on the wall face. The gas molecule collides with the reflecting plate 47 in the blowout part and is reflected thereby and passes through the blowout holes 46 and goes forward the substrate 43. Only gas molecule whose spread is regulated by the blowout holes 46 is permitted to go forward the direction of the substrate 43. When the gas molecule reflected with the reflecting plate 47 is reflected to opposite direction by a plate 50 in which the blowout holes are formed, the gas molecule is repeatedly reflected in the blowout part 45 until the molecule is passed through the blowout holes 46.

52. 发明专利

JPS6273706A WAFER HEATING AND ROTATING MECHANISM 失效
公开(公告)号：JPS6273706A
公开(公告)日：1987-04-04
申请号：JP21238885
申请日：1985-09-27
申请人： HITACHI LTD
发明人： YAMAMOTO TATSUHARU , KONDO YOSHIMASA , YAMAGUCHI SUMIO , SHINTANI AKIRA
IPC分类号： H01L21/68 , H01L21/205 , H01L21/31 , H01L21/67
摘要： PURPOSE:To automatically deliver and receive a wafer without restriction in a direction of a wafer rotating plane by constructing integrally a mechanism capable of delivering a wafer holder having a structure adapted to deliver and receive the wafer in addition to heating and rotating the wafer only by controlling the elevational moving position on a flange. CONSTITUTION:The elevational movements of a wafer holder in case of delivering and receiving the holder are applied to a central coupling rod 16 to be guided by bellows out of a vacuum tank, transmitted through a roller support 19 connected by a connecting pin 18 to upper and lower rollers 20 without interfering with a post 17, and simultaneously transmitted through a bearing 21 to a base 15 and a driven gear 22 integrated with the base 15. Thus, the rollers 20 are rolled along the outer surface of the post to establish the elevational accuracy. After the delivery by the elevational movements is completed, the rotation in case of growing a thin film is applied to a shaft 23 by a rotating machine from atmospheric side, and transmitted to the base 15 integrated with the driven gear by a drive gear 24 connected with the shaft 23.

53. 发明专利

JPS6112021A Molecular-beam epitaxy device 失效
标题翻译：分子束外观设备
公开(公告)号：JPS6112021A
公开(公告)日：1986-01-20
申请号：JP13102584
申请日：1984-06-27
申请人： Hitachi Ltd
发明人： MIZUMOTO MUNEO , FUJIOKA KAZUMASA , OKUNO SUMIO , YAMAGUCHI SUMIO , TAMURA NAOYUKI
IPC分类号： H01L21/268 , H01L21/203 , H01L21/26
摘要： PURPOSE: To shorten a cooling time when a temperature is lowered up to a temperature where a susceptor can be extracted to the outside from a temperature at a point of time when the growth of a substrate crystal is completed, and to shorten time per one cycle of crystal growth by forcibly cooling the susceptor.
CONSTITUTION: When a signal from a thermocouple 31 is inputted to a controller 34 at a point of time when the growth of a substrate crystal is completed, the controller 34 outputs the signal of valve opening to electric ON-OFF valves 33A, 33B. When the electric ON-OFF valves 33A, 33B are opened by the signal, a cooling fluid flows in cooling pipes 32, and a substrate holder 3 containing a susceptor 5 is cooled. When the temperature of the susceptor lowers up to a temperature where the susceptor is extracted by the cooling, the controller 34 outputs the signal of valve closing to the electric ON-OFF valves 33A, 33B, and the electric ON-OFF valves 33A, 33B are closed. Accordingly, the susceptor 5 is cooled forcibly by a cooling device 30 during a period up to the temperature where the susceptor is extracted from a temperature at the point of time when the growth of the substrate crystal is completed, thus largely shortening a cooling time.
COPYRIGHT: (C)1986,JPO&Japio
摘要翻译：目的：为了缩短温度降低到从基材晶体生长完成时的温度将基座提取到外部的温度的冷却时间，并缩短每个循环的时间通过强制冷却感受器来实现晶体生长。构成：当在基板晶体生长完成的时刻将来自热电偶31的信号输入到控制器34时，控制器34将电磁开关阀33A，33B的开阀信号输出。当通过信号打开电开关阀33A，33B时，冷却流体在冷却管32中流动，并且包含基座5的基板保持件3被冷却。当基座的温度降低到通过冷却提取基座的温度时，控制器34输出关闭阀的信号到电动开关阀33A，33B和电动开关阀33A，33B 关闭。因此，在从基板晶体的生长完成的时刻的温度到达基座的温度的期间内，通过冷却装置30强制地冷却基座5，从而大大缩短了冷却时间。

54. 发明专利

JPS6086819A MOLECULAR-BEAM EPITAXY DEVICE 失效
公开(公告)号：JPS6086819A
公开(公告)日：1985-05-16
申请号：JP19424683
申请日：1983-10-19
申请人： HITACHI LTD
发明人： YAMAGUCHI SUMIO , TAMURA NAOYUKI , SHIRAKI YASUHIRO , SATOU KAZUO , KONDOU YOSHIMASA , MIYATA TOSHIMITSU , TAKAHASHI TOSHIO , MIZUMOTO MUNEO
IPC分类号： H01L21/203
摘要： PURPOSE:To execute a process for molecular-beam epitaxial growth efficiently by fulfilling the functions of the introduction and carry-out of a substrate in an independent vacuum chamber. CONSTITUTION:Gate valves 15 are closed at a point of time when a substrate completely grown is transferred to a carrying path 12 while a substrate not treated is transported to an analyzing chamber 13 or a growth chamber 14. A gate valve 16 is opened, the substrate completely treated is transferred to a carry-out chamber 17 by a carry-out mechanism 18, the gate valve 16 is closed again, and the inside of the carry-out chamber 17 is opened to atmospheric air and the substrate is extracted. Accordingly, the substrates completely treated are carried out rapidly to the outside of a device, and can be treated separately as required, and a process of molecular-beam epitaxy can be incorporated efficiently into the stream of a series of substrate treatment.

55. 发明专利

JPS5914437A Vacuum chuck 失效
标题翻译：真空罐
公开(公告)号：JPS5914437A
公开(公告)日：1984-01-25
申请号：JP11850882
申请日：1982-07-09
申请人： Hitachi Ltd
发明人： SAITOU SAKAE , KAWAMURA YOSHIO , YAMAGUCHI SUMIO , MATSUMURA YASUHIDE , NAKAZAWA HIDEO , KAWAGUCHI KOUJI
IPC分类号： B23Q3/08 , B25B11/00
CPC分类号： B25B11/005
摘要： PURPOSE:To certainly secure a plane surface holding a wafer by dint of suction force as well as to make a back cover detachable, by forming the back cover into an extremely pliable structure as compared with a suction surface constituent member, in case of a vacuum chuck for wafer suction use. CONSTITUTION:A back cover 12 is detachably installed on the backside of a suction block 11. A central part 18 of the back cover 12 consists of an extremely pliable structure as compared with a suction surface constituent member 11''. The degree of the pliability is as follows that the back cover 12 is deformed by receiving bending force by the atmospheric pressure at exhaustion in exhaust spaces 14 and 15, and the bending force is made to oppose another bending force that a suction surface 11' being in the opposite direction receives by the atmospheric pressure through contact with the backside of the suction surface 11', thereby making the amount of deformation in the suction surface 11' extremely reducible. When the exhaust of these exhaust spaces 14 and 15 takes place in order to attract a wafer, the back cover 12 is also deformed by receiving the bending force by the atmospheric pressure, so that the suction surface keeps its highly accurate flatness.
摘要翻译：目的：为了确保通过吸力保持晶片的平面，以及使后盖可拆卸，通过将后盖与吸力表面构成构件相比形成极其柔软的结构，在真空的情况下卡盘用于晶片吸引使用。构成：后盖12可拆卸地安装在抽吸块11的背面上。后盖12的中心部分18由与吸附表面构成构件11“相比非常柔软的结构构成。柔性的程度如下：后盖12通过在排气空间14和15中的排气时受到大气压力的弯曲力而变形，并且弯曲力与吸入面11'为在相反方向上通过与吸力表面11'的背面接触而受到大气压力的接收，从而使吸入表面11'中的变形量极度可降低。当为了吸引晶片而进行这些排气空间14和15的排气时，通过接受大气压力的弯曲力，后盖12也变形，使得吸入面保持其高精度的平坦度。

56. 发明专利

JPS51102571A 失效
公开(公告)号：JPS51102571A
公开(公告)日：1976-09-10
申请号：JP2708775
申请日：1975-03-07
申请人： HITACHI LTD
发明人： OBATA OSAMU , YAMAGUCHI SUMIO , KAMEYAMA MASAYOSHI
IPC分类号： B65H7/14 , G01M99/00 , G01V8/20 , H01L21/50

57. 发明专利

JPH08172066A SURFACE PROCESSING METHOD AND DEVICE 失效
公开(公告)号：JPH08172066A
公开(公告)日：1996-07-02
申请号：JP31629694
申请日：1994-12-20
申请人： HITACHI LTD
发明人： TSUNEKAWA SUKEYOSHI , FUJITO TOSHIAKI , KOIZUMI KOTARO , KAKO MASAO , YAMAGUCHI SUMIO , INADA AKIISA
IPC分类号： H01L21/302 , H01L21/304 , H01L21/3065
摘要： PURPOSE: To provide the removing method and device of an organic matter in less dispersion of the whole wafer and less deceleration of removing rate of the organic matter even in the case of a large area wafer. CONSTITUTION: At least exceeding two each of processing chambers 1, 2 are provided to feed ozone gas alternately while the wafers are previously heated in the stand-by processing chamber not processing the wafer. Through these procedures, the removing rate and the evenness of the organic matter can be improved by feeding the ozone gas alternately without increasing the ozone gas flow rate in the whole device. Furthermore, any foreign matter adhering to the wafer rear surface can be notably decreased in comparison with the contact heating step by close heating the wafer in the stand-by processing chamber.

58. 发明专利

JPH05206021A METHOD AND APPARATUS FOR MANUFACTURE OF SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPH05206021A
公开(公告)日：1993-08-13
申请号：JP1281392
申请日：1992-01-28
申请人： HITACHI LTD
发明人： YAMAGUCHI SUMIO , KAWASUMI KENICHI
IPC分类号： G03F7/42 , H01L21/027 , H01L21/30 , H01L21/302 , H01L21/3065
摘要： PURPOSE:To prevent the formation and deposition of ammonium nitrate by controlling the temperature of a substrate for avoiding the deposition of ammonium nitrate and peeling and removing a resist by the action of ultraviolet ray, ozone containing ammonia and heat higher than a particular value. CONSTITUTION:A plurality of nozzles 10 are welded and fixed to a highly pure quartz plate 11, said nozzles 10 are welded and connected to a quartz branch cylinder 9, and the branch cylinder 9 is arranged near a light source 15 inside a containers 16 of an ultraviolet ray source 15. A mixed steam gas containing ozone and ammonia is supplied to the branch cylinder 9 by a connecting tube 8 and also blown to the surface of wafer 12 by the nozzles 10. Here, ammonium nitrate is formed at the same time with resist removing reaction. Ammonium nitrate is decomposed at about 210 deg.C. Thus, the deposition of ammonium nitrate can be prevented by resist removing treatment at the temperature higher than 210 deg.C by controlling a heater built-in a stage 13.

59. 发明专利

JPH04321218A REMOVING APPARATUS FOR ORGANIC SUBSTANCE 失效
公开(公告)号：JPH04321218A
公开(公告)日：1992-11-11
申请号：JP9030491
申请日：1991-04-22
申请人： HITACHI LTD
发明人： YAMAGUCHI SUMIO , KAWASUMI KENICHI , UNO YOSHIO
IPC分类号： H01L21/30 , H01L21/027 , H01L21/302 , H01L21/3065
摘要： PURPOSE:To prevent a flow rate from being changed and a gas flow passage from being clogged, to stably detect a change in a gas concentration during a removal treatment without deterioration with the passage of time by a method wherein a heating mechanism which can be controlled to a prescribed temperature or higher is installed in one part of a generated-gas collecting pipe. CONSTITUTION:Ozone is changed to active oxygen atoms; they decompose a resist into carbonic acid gas, water and the like; these are discharged into a treatment chamber 1. A gas detection means which detects carbon dioxide is installed at a halfway part in a pipe guided from a gas discharge port 6. Thereby, a route point for a removal treatment is detected. A gas flow-rate adjustment mechanism 13 is controlled in such a way that the flow rate of a generated gas flowing out from the gas discharge port 6 becomes definite. A heating mechanism 21 is used to prevent a gas flow passage from being clogged and the flow rate from being changed; it heats and decomposes an organic substance and the like in the generated gas. Although the temperature at which they are heated and decomposed differs according to the kind of the organic substance contained in the resist, its ashing treatment temperature and the like, it is set at 400 deg.C or higher. When it is heated within a range of 700 to 800 deg.C, it can be decomposed with good efficiency.

60. 发明专利

JPH03272139A SURFACE TREATMENT DEVICE 失效
公开(公告)号：JPH03272139A
公开(公告)日：1991-12-03
申请号：JP6978090
申请日：1990-03-22
申请人： HITACHI LTD
发明人： TOKUDA MITSUO , KAWASUMI KENICHI , FUJITO TOSHIAKI , HASHIZAKI MOTOHIRO , INADA AKIISA , YAMAGUCHI SUMIO
IPC分类号： H01L21/302 , H01L21/027 , H01L21/30 , H01L21/304 , H01L21/3065
摘要： PURPOSE:To contrive to improve a throughput speed by a method wherein a cooling chamber is provided on a reaction gas supply route and an upper boundary wall is used as a transmitting material for light comprising ultraviolet rays as its main component. CONSTITUTION:Reaction gas containing ozone is introduced in a cooling chamber 5 through a feed nozzle 7, comes into contact to the inner wall of the chamber 5, is cooled, is made to flow in a reaction chamber through a transmitting window 3 via nozzles 6 and is fed on the surface of a wafer 2. Since the nozzles 6 are constituted of a high-heat transmitting material, the inner wall of the reaction chamber is also cooled and the cooled temperature of the reaction gas can be kept. The illuminance of ultraviolet rays is never deteriorated by the window 3 of a boundary wall. In such a way, the reaction gas containing the high-concentration ozone can be evenly fed, a throughput speed can be increased and a throughput can be improved.

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