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1. 发明专利

JP2000323455A ASHING APPARATUS 失效
公开(公告)号：JP2000323455A
公开(公告)日：2000-11-24
申请号：JP12673599
申请日：1999-05-07
申请人： HITACHI LTD
发明人： KAWASAKI HIROMICHI , FUJITO TOSHIAKI
IPC分类号： H01L21/302 , G03F7/42 , H01L21/027 , H01L21/3065
摘要： PROBLEM TO BE SOLVED: To eliminate influence of a gas flow to make the ashing process uniform without rotating a stage, by feeding a process gas in a closed process chamber, holding the pressure constant in this chamber, and exhausting after a fixed time. SOLUTION: In a process chamber a heater stage 4 for heating a wafer 3 and a UV lamp 6 for providing rays at a wavelength of nearly 254 nm are installed, and when a process gas is fed to the process chamber through a three-way valve 8, a valve 9 is closed. When the pressure shown by a manometer 10 reaches a desired value, the three-way valve 8 is switched for exhaustion, the valve 9 remains closed to thereby holding a fixed pressure in the process chamber. After a predetermined time lapsed, the valve 9 opens to exhaust the process chamber, the valve 9 is closed again when a set pressure value is reached in the process chamber, and the three-way valve 8 is switched for gas feeding to the process chamber, thereby processing at a fixed pressure. The above process sequence is repeated to do the ashing process.

2. 发明专利

JPH0927474A ASHING METHOD AND APPARATUS 失效
公开(公告)号：JPH0927474A
公开(公告)日：1997-01-28
申请号：JP17318195
申请日：1995-07-10
申请人： HITACHI LTD
发明人： KOIZUMI KOTARO , FUJITO TOSHIAKI , TSUNEKAWA SUKEYOSHI , INADA AKIISA
IPC分类号： H01L21/302 , H01L21/027 , H01L21/3065
摘要： PROBLEM TO BE SOLVED: To prevent a treating chamber from being contaminated by heating a wafer at the same temp. as the ashing temp. before ashing a resist, feeding a purge gas to flow on the surface of the wafer or entire of the treating chamber and exhausting it. SOLUTION: A wafer 11 has a resist on the surface. The wafer 11 is carried out of a cassette 1 into an ashing chamber 3 by a conveying arm 2 and laid on conveying pins 5 located at a heater stage 4. When conveying of the wafer 11 begins, a purge gas is fed from an ozone nozzle 7 and purge gas nozzle 9. After the arm 2 returns back, the heated heater stage 5 is lifted to contact with the wafer 11. This stage has a vacuum suction mechanism to closely contact the wafer 11 to the stage 4 while the purge gas and gas produced from the resist are exhausted out from the chamber 3 through an exhaust hole 10.

3. 发明专利

JPH08335542A RESIST SEPARATING APPARATUS 失效
公开(公告)号：JPH08335542A
公开(公告)日：1996-12-17
申请号：JP13905495
申请日：1995-06-06
申请人： HITACHI LTD
发明人： KAKO MASAO , KOIZUMI KOTARO , FUJITO TOSHIAKI , YAMAGUCHI SUMIO , INADA AKIISA , TSUNEKAWA SUKEYOSHI
IPC分类号： G03F7/42 , H01L21/027
摘要： PURPOSE: To improve efficiency of resist separating apparatus utilizing viscosity. CONSTITUTION: A means for coating a wafer with liquid including an element having viscosity, a means 1 for drying the liquid coated, a transfer means 2 and a means 3 for separating resist together with the coated element having viscosity are comprised. The separating means is composed of a mechanism 31 for absorbing and fixing the rear surface of the wafer, a rotary moving means 32 using a material which can reproduce viscosity to the part being in contact with the element having viscosity coated on the wafer, a means for absorbing and fixing the rear surface of the wafer arranged facing to the rotary moving means and a means for moving the wafer synchronously with the movement of the rotary moving means.

4. 发明专利

JPH08145740A FLOW MEASURING INSTRUMENT FOR SEMICONDUCTOR MANUFACTURING DEVICE 失效
公开(公告)号：JPH08145740A
公开(公告)日：1996-06-07
申请号：JP28628494
申请日：1994-11-21
申请人： HITACHI LTD
发明人： KAKO MASAO , FUJITO TOSHIAKI
IPC分类号： G01F1/00 , H01L21/02
摘要： PURPOSE: To eliminate a movable part such as a float in a gas piping route, reduce the factor for contaminating the gas piping route more than in the past, and minimize the contamination in the gas piping route inner part as much as possible. CONSTITUTION: A gas piping partially contains a means for generating a sound wave or vibration by the flow of a gas; a sensor 3 for detecting the sound wave or vibration; a means 5 for analyzing the frequency detected by the sensor; an arithmetic means 7 for converting the result of the frequency analysis into flow rate; a display part 8 for displaying the arithmetic result; and a flow measuring device 9 capable of outputting a control signal for controlling an external equipment.

5. 发明专利

JPH0758188A WAFER PROCESSING UNIT 失效
公开(公告)号：JPH0758188A
公开(公告)日：1995-03-03
申请号：JP20492193
申请日：1993-08-19
申请人： HITACHI LTD
发明人： TOKUDA MITSUO , FUJITO TOSHIAKI , HASHIZAKI MOTOHIRO
IPC分类号： B65G49/07 , H01L21/677 , H01L21/68 , H01L21/683
摘要： PURPOSE:To make it possible to prevent warp of a water at a high temperature and put the wafer without misalignment when the wafer is held by suction, by minimizing the area of contact between a rear face of the wafer and a wafer holding part in a wafer conveying means, while the gap between almost all surface area of the non-contact part and the wafer is kept larger than a given value. CONSTITUTION:In a wafer processing system for treating a wafer 2 by heating or cooling, the contact area between the rear face of the wafer 2 and a wafer holding part 7 in a wafer conveying means 5 is minimized, while the gap (G) between the wafer 2 and an entire area or almost all area of a non-contact face 7b is made not less than 0.3mm. As an example, the wafer holding part 7 has a step part, in which only thw top part 7a of the wafer holding part 7 is brought into contact with the rear face of the wafer 2 and the gap (G) between the rear face of the wafer 2 and the other part 7b opposite the rear face of the wafer 2 is kept not less than 0.3mm. Consequently, heat transfer at the gap part from the wafer 2 to the wafer holding part 7 is greatly reduced, so warp in the wafer 2 is prevented and the wafer 2 is held and conveyed reliably.

6. 发明专利

JPH03205823A ASHING DEVICE 失效
公开(公告)号：JPH03205823A
公开(公告)日：1991-09-09
申请号：JP66590
申请日：1990-01-08
申请人： HITACHI LTD
发明人： INADA AKIISA , YAMAGUCHI SUMIO , TOKUDA MITSUO , KAWASUMI KENICHI , FUJITO TOSHIAKI
IPC分类号： H01L21/302 , H01L21/3065
摘要： PURPOSE:To obtain an ashing device which can handle 50 sheets and is compact and free of pollution occurrence by performing the ashing treatment from the upper stage of a wafer cassette to the lower stage. CONSTITUTION:In a method of providing two wafer cassettes 1, putting wafers in both cassettes 1, taking out wafers from the wafer cassettes 1, ashing the wafers and returning the wafers 1 after the treatment to the same stage of the wafer cassettes 1, the treatment is done from the upper stages of the wafer cassettes 1 to the lower stages. For example, wafers are set in the wafer cassettes 1 and 1, and a wafer of each cassette 1 is taken out by a carrier 2, and they are loaded in treatment rooms 3 to do ashing treatment. The wafers after ashing treatment are stored in the same stages of the wafer cassettes 1, and next wafers at lower stage are taken out and the treatment is repeated. And a cleaning arm 4 is inserted in the vacant stage of the wafer cassette in the course of treatment to do cleaning by supplying ultraviolet rays and ozone.

7. 发明专利

JPS62281254A FLUORESCENT LAMP 失效
公开(公告)号：JPS62281254A
公开(公告)日：1987-12-07
申请号：JP12331886
申请日：1986-05-30
申请人： HITACHI LTD
发明人： FUJITO TOSHIAKI , MAGAI MITSUTAKE , SHIMIZU TAKAO
IPC分类号： H01J61/44
摘要： PURPOSE:To prevent a fluorescent lamp from being colored and enable its apperrance quality to be kept excellent for a long period, by specifying a specific surface area of a phosphor for coating an inner glass surface in a saving power-type fluorescent lamp formed of a glass tube. CONSTITUTION:With a specific surface area of a phosphor for coating an inner glass surface in a fluorescent lamp being enlarged, a corpuscular phosphor layer is formed between the inner glass surface and discharge plasma. Coloring of the fluorescent lamp is usually caused by amalgam formation due to reaction of mercury, which is a lamp sealed-in material on the inner glass surface, and sodium in the glass. By forming the corpuscular phosphor layer of 4000-7000 cm /g in specific surface area between the inner glass surface and the discharge plasma, the amalgam is prevented from being formed due to the reaction of mercury and sodium, so that the fluorescent lamp can be prevented from being colored.

8. 发明专利

JPH0927468A WAFER SURFACE TREATING METHOD AND APPARATUS 失效
公开(公告)号：JPH0927468A
公开(公告)日：1997-01-28
申请号：JP17317795
申请日：1995-07-10
申请人： HITACHI LTD
发明人： TSUNEKAWA SUKEYOSHI , KOIZUMI KOTARO , FUJITO TOSHIAKI , YAMAGUCHI SUMIO
IPC分类号： H01L21/302 , H01L21/304 , H01L21/306 , H01L21/3065
摘要： PROBLEM TO BE SOLVED: To reduce the power up of an internal heater and power load on a slip ring and enable the temp. uniformity of a large size wafer by using at least one auxiliary heater in addition to the internal heater contained in a stage on which a wafer is laid. SOLUTION: Main heater 3 for heating a wafer 4 is contained in a stage 2 on which the wafer 4 in a easing 1 is laid. Auxiliary heater 9 is mounted on the side wall, top plate or bottom plate of the casing 1. In an upper part of the casing 1 nozzles 6 are disposed to feed ozone into a lower part of the casing 1 and the nozzles 6 face the surface of the wafer 4. Nozzle plate 5 also serving as a partition is disposed at the lower side of the nozzles 6. In an upper part of the casing 1 a plurality of ultraviolet lamps 7 are disposed as desired for irradiating the wafer 4 with an ultraviolet ray. The nozzle plate 5 is made of a material such as synthetic quartz easy to pass the ultraviolet ray.

9. 发明专利

JPH0831905A SEMICONDUCTOR MANUFACTURING DEVICE 失效
公开(公告)号：JPH0831905A
公开(公告)日：1996-02-02
申请号：JP16655094
申请日：1994-07-19
申请人： HITACHI LTD
发明人： HASHIZAKI MOTOHIRO , FUJITO TOSHIAKI , YAMAGUCHI SUMIO
IPC分类号： B65G49/07 , B25J13/08 , G05B19/18 , G05B19/404 , H01L21/677 , H01L21/68
摘要： PURPOSE:To eliminate a centering unit and prevent generation of particles due to abrasion between a pin and a wafer by correcting the deviation of the wafer by correcting the transfer quantity of an arm by the deviation of the wafer when the wafer is held by the arm. CONSTITUTION:A robot 5 transfers a wafer 3 between a unit 1 and a unit 2 using an arm 4. The robot 5 takes out the wafer 3 from the unit 2 based on the basic data, then, measures wafer deviation by the sensor 6 and the sensor 7. A correction quantity based on the reference data is obtained from the measurement data. Data required for transfer is obtained from the reference data and the correction quantity. The wafer 3 is transferred into the unit 2 based on the transfer data. Thus, the deviation of the water 3 is corrected without a centering unit. The wafer 3 is prevented from being centered making contact with a pin, etc., and generation of particles is eliminated.

10. 发明专利

JPH07135164A REFORMING DEVICE 失效
公开(公告)号：JPH07135164A
公开(公告)日：1995-05-23
申请号：JP28225693
申请日：1993-11-11
申请人： HITACHI LTD
发明人： KAWASUMI KENICHI , FUJITO TOSHIAKI , TSUNEKAWA SUKEYOSHI , YAMAGUCHI SUMIO , INADA AKIISA
IPC分类号： H01L21/302 , H01L21/027 , H01L21/3065
摘要： PURPOSE:To provide a reforming device capable of reducing the particle sticking to a processed element from a device thereby enabling the even reforming. CONSTITUTION:This reforming device is composed of a supporting arm 2 in no substantial contact with heat generating sources 3, 4 for mounting a planar workpiece 1, gas feeder means 10, 11 feeding a reaction gas to the processed surface of said element 1 as well as a gas blow-out port 7 in a slender shape arranged on the central line of the workpiece 1 and the heat generating sources 3 comprising linear heating sources 3 extending in parallel with the long direction of the feeding port of the gas blowing port 7. Accordingly, the particle sticking to the workpiece 1 can be reduced to increase the yield thereby providing a feasible reforming device with even performance.

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