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51. 发明申请

US20050003568A1 Semiconductor device and method for forming the same 失效
标题翻译：半导体装置及其形成方法
公开(公告)号：US20050003568A1
公开(公告)日：2005-01-06
申请号：US10900462
申请日：2004-07-28
申请人： Shunpei Yamazaki , Hongyong Zhang
发明人： Shunpei Yamazaki , Hongyong Zhang
IPC分类号： G02F1/13 , G02F1/136 , G09F9/00 , G09F9/35 , H01L21/00 , H01L21/02 , H01L21/20 , H01L21/28 , H01L21/31 , H01L21/3105 , H01L21/314 , H01L21/324 , H01L21/336 , H01L21/8234 , H01L21/84 , H01L27/00 , H01L29/78 , H01L29/786
CPC分类号： H01L21/28158 , H01L21/3144 , H01L29/66757
摘要： A low temperature process for fabricating a high-performance and reliable semiconductor device in high yield, comprising forming a silicon oxide film as a gate insulator by chemical vapor deposition using TEOS as a starting material under an oxygen, ozone, or a nitrogen oxide atmosphere on a semiconductor coating having provided on an insulator substrate; and irradiating a pulsed laser beam or an intense light thereto to remove clusters of such as carbon and hydrocarbon to thereby eliminate trap centers from the silicon oxide film. Also claimed is a process comprising implanting nitrogen ions into a silicon oxide film and annealing the film thereafter using an infrared light, to thereby obtain a silicon oxynitride film as a gate insulator having a densified film structure, a high dielectric constant, and an improved-withstand voltage.
摘要翻译：一种用于以高产率制造高性能和可靠的半导体器件的低温工艺，包括通过在氧气，臭氧或氮氧化物气氛下使用TEOS作为起始材料，通过化学气相沉积形成氧化硅膜作为栅极绝缘体半导体涂层，其设置在绝缘体基板上; 并照射脉冲激光束或强光以去除诸如碳和烃的簇，从而消除氧化硅膜的陷阱中心。还要求保护的方法包括将氮离子注入到氧化硅膜中，然后使用红外光退火该膜，从而获得具有致密化膜结构，高介电常数和改进的介电常数的栅极绝缘体的氧氮化硅膜，耐电压

52. 发明授权

US06831333B2 Semiconductor device and method of making thereof 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US06831333B2
公开(公告)日：2004-12-14
申请号：US10309488
申请日：2002-12-03
申请人： Hongyong Zhang , Satoshi Teramoto
发明人： Hongyong Zhang , Satoshi Teramoto
IPC分类号： H01C2904
CPC分类号： H01L27/1214 , G02F1/13454 , H01L29/78618 , H01L29/78621
摘要： To provide a thin film transistor having a low OFF characteristic and to provide P-channel type and N-channel type thin film transistors where a difference in characteristics of the P-channel type and the N-channel type thin film transistors is corrected, a region 145 having a P-type behavior more potential than that of a drain region 146 is arranged between a channel forming region 134 and the drain region 146 in the P-channel type thin film transistor whereby the P-channel type thin film transistor having the low OFF characteristic can be provided and a low concentration impurity region 136 is arranged between a channel forming region 137 and a drain region 127 in the N-channel type thin film transistor whereby the N-channel type thin film transistor having the low OFF characteristic and where deterioration is restrained can be provided.
摘要翻译：为了提供具有低OFF特性的薄膜晶体管，并且提供P沟道型和N沟道型薄膜晶体管，其中P沟道型和N沟道型薄膜晶体管的特性差被校正，在P沟道型薄膜晶体管的沟道形成区域134和漏极区域146之间配置具有比漏极区域146更多的P型特性的区域145，由此P沟道型薄膜晶体管具有可以提供低OFF特性，并且在N沟道型薄膜晶体管中的沟道形成区域137和漏极区域127之间布置低浓度杂质区域136，由此具有低OFF特性的N沟道型薄膜晶体管和可以抑制劣化。

53. 发明授权

US06790749B2 Method of manufacturing a semiconductor device 失效
标题翻译：制造半导体器件的方法
公开(公告)号：US06790749B2
公开(公告)日：2004-09-14
申请号：US10241624
申请日：2002-09-12
申请人： Yasuhiko Takemura , Hongyong Zhang , Satoshi Teramoto
发明人： Yasuhiko Takemura , Hongyong Zhang , Satoshi Teramoto
IPC分类号： H01L2120
CPC分类号： H01L27/12 , H01L27/124 , H01L29/458 , H01L29/4908 , H01L29/66757 , H01L29/78621 , H01L29/78696 , Y10S257/90
摘要： An object of this invention is to provide a semiconductor device manufacturing method in which a semiconductor film is formed over a substrate, the semiconductor film is crystallized by irradiating a laser light, a silicon oxide film is formed in contact with the crystalline semiconductor film by using organic silane, a gate electrode is formed in contact with the silicon oxide film, an impurity element is introduced into the crystalline semiconductor film, the impurity element is activated, an interlayer insulating film is formed over the gate electrode, and then a wiring comprising aluminum is formed over the interlayer insulating film.
摘要翻译：本发明的目的是提供一种半导体器件的制造方法，其中半导体膜形成在衬底上，半导体膜通过照射激光而结晶，通过使用通过使用氧化硅膜与晶体半导体膜接触形成氧化硅膜有机硅烷，形成与氧化硅膜接触的栅电极，将杂质元素引入晶体半导体膜中，杂质元素被激活，在栅电极上形成层间绝缘膜，然后将包含铝的布线形成在层间绝缘膜上。

54. 发明授权

US06777763B1 Semiconductor device and method for fabricating the same 失效
标题翻译：半导体装置及其制造方法
公开(公告)号：US06777763B1
公开(公告)日：2004-08-17
申请号：US09190618
申请日：1998-11-12
申请人： Hongyong Zhang , Hideto Ohnuma , Naoaki Yamaguchi , Yasuhiko Takemura
发明人： Hongyong Zhang , Hideto Ohnuma , Naoaki Yamaguchi , Yasuhiko Takemura
IPC分类号： H01L2976
CPC分类号： H01L27/1296 , H01L27/1214 , H01L27/127 , H01L29/66757 , H01L29/78618
摘要： In a thin film transistor (TFT), a mask is formed on a gate electrode, and a porous anodic oxide is formed in both sides of the gate electrode using a relatively low voltage. A barrier anodic oxide is formed between the gate electrode and the porous anodic oxide and on the gate electrode using a relatively high voltage. A gate insulating film is etched using the barrier anodic oxide as a mask. The porous anodic oxide is selectively etched after etching barrier anodic oxide, to obtain a region of an active layer on which the gate insulating film is formed and the other region of the active layer on which the gate insulating film is not formed. An element including at least one of oxygen, nitrogen and carbon is introduced into the region of the active layer at high concentration in comparison with a concentration of the other region of the active layer. Further, N- or P-type impurity is introduced into the active layer. Accordingly, high resistance impurity regions are formed in both sides of a channel forming region.
摘要翻译：在薄膜晶体管（TFT）中，在栅电极上形成掩模，并且使用相对低的电压在栅电极的两侧形成多孔阳极氧化物。在栅电极和多孔阳极氧化物之间以及使用较高电压的栅电极上形成阻挡阳极氧化物。使用阻挡阳极氧化物作为掩模蚀刻栅极绝缘膜。在蚀刻阻挡阳极氧化物之后，选择性地蚀刻多孔阳极氧化物，以获得其上形成有栅极绝缘膜的有源层的区域和不形成栅极绝缘膜的有源层的另一区域。与活性层的其他区域的浓度相比，包含氧，氮和碳中的至少一种的元素以高浓度被引入活性层的区域。此外，将N型或P型杂质引入有源层。因此，在沟道形成区域的两侧形成高电阻杂质区域。

55. 发明授权

US06770143B2 Method for annealing a semiconductor 失效
标题翻译：半导体退火方法
公开(公告)号：US06770143B2
公开(公告)日：2004-08-03
申请号：US10225132
申请日：2002-08-22
申请人： Hongyong Zhang , Naoto Kusumoto
发明人： Hongyong Zhang , Naoto Kusumoto
IPC分类号： C23C1600
CPC分类号： H01L21/02686 , C30B1/023 , C30B29/06 , H01L21/02532 , H01L21/2026 , Y10S117/904 , Y10S438/908 , Y10T117/10
摘要： A method for manufacturing a semiconductor device including preparing a multi-chamber system having at least first and second chambers, the first chamber for forming a film and the second chamber for processing an object with a laser light; processing a substrate in one of the first and second chambers; transferring the substrate to the other one of the first and second chambers; and processing the substrate in the other one of the chambers, wherein the first and second chambers can be isolated from one another by using a gate valve.
摘要翻译：一种制造半导体器件的方法，包括制备具有至少第一和第二腔室的多室系统，用于形成膜的第一腔室和用激光处理物体的第二腔室; 在所述第一和第二腔室之一中加工衬底; 将衬底转移到第一和第二腔室中的另一个; 以及处理另一个室中的基板，其中第一和第二室可以通过使用闸阀彼此隔离。

56. 发明授权

US06757032B1 Electronic device and method for fabricating the same 失效
公开(公告)号：US06757032B1
公开(公告)日：2004-06-29
申请号：US09134547
申请日：1998-08-17
申请人： Hongyong Zhang , Masayuki Sakakura
发明人： Hongyong Zhang , Masayuki Sakakura
IPC分类号： G02F1136
CPC分类号： G02F1/133553 , G02F1/133512
摘要： An electronic device having a long life and high quality pixel unit, said electronic device comprising a plurality of active elements, an insulator layer which covers the plurality of active elements, and a pixel region having placed thereon a plurality of pixel electrodes and being formed on the insulator layer, wherein, the insulator layer comprises a groove portion having an opening which is superposed on the interstice between the neighboring pixel electrodes, and said groove portion comprises an insulating light absorber buried therein.

57. 发明授权

US06730549B1 Semiconductor device and method for its preparation 失效
标题翻译：半导体器件及其制备方法
公开(公告)号：US06730549B1
公开(公告)日：2004-05-04
申请号：US09222185
申请日：1998-12-29
申请人： Hongyong Zhang , Toru Takayama , Yasuhiko Takemura , Akiharu Miyanaga , Hisashi Ohtani , Junichi Takeyama
发明人： Hongyong Zhang , Toru Takayama , Yasuhiko Takemura , Akiharu Miyanaga , Hisashi Ohtani , Junichi Takeyama
IPC分类号： H01L21336
CPC分类号： H01L21/02672 , H01L21/02532 , H01L21/02609 , H01L21/02675 , H01L21/2026 , H01L29/78675
摘要： A semiconductor device is disclosed. The semiconductor device has a crystalline silicon film as an active layer region. The crystalline silicon film has needle-like or columnar crystals oriented parallel to the substrate and having a crystal growth direction of (111) axis. A method for preparing the semiconductor device comprises steps of adding a catalytic element to an amorphous silicon film; and heating the amorphous silicon film containing the catalytic element at a low temperature to crystallize the silicon film.
摘要翻译：公开了一种半导体器件。半导体器件具有作为有源层区域的晶体硅膜。结晶硅膜具有平行于衬底并具有（111）轴的晶体生长方向的针状或柱状晶体。制备半导体器件的方法包括以下步骤：向非晶硅膜添加催化元素; 并在低温下加热含有催化元素的非晶硅膜以使硅膜结晶。

58. 发明授权

US06696326B2 Cleaning method to prevent watermarks 有权
标题翻译：防止水印的清洗方法
公开(公告)号：US06696326B2
公开(公告)日：2004-02-24
申请号：US09832866
申请日：2001-04-12
申请人： Hongyong Zhang , Masayuki Sakakura , Yuugo Goto
发明人： Hongyong Zhang , Masayuki Sakakura , Yuugo Goto
IPC分类号： H01L2184
CPC分类号： H01L21/02052
摘要： In a cleaning method and a cleaning apparatus of a silicon substrate, after wet cleaning or etching of the substrate having a silicon surface is carried out, and during or after a pure water rinse of the substrate, an oxide film with a thickness of 10 to 30 Å is formed on the silicon surface by rinsing the substrate by pure water added with an oxidizer, and then the substrate is dried. Since drying is carried out after the oxide film is formed on the silicon surface, the occurrence of a water mark can be prevented.
摘要翻译：在硅衬底的清洁方法和清洁装置中，在对具有硅表面的衬底进行湿清洗或蚀刻之后，在衬底的纯水冲洗之前或之后，将厚度为10至通过用添加有氧化剂的纯水冲洗基材，在硅表面上形成30埃，然后将基材干燥。由于在硅表面上形成氧化膜之后进行干燥，因此可以防止发生水痕。

59. 发明授权

US06680764B2 Liquid crystal display apparatus containing image sensor and process for producing the same 有权
公开(公告)号：US06680764B2
公开(公告)日：2004-01-20
申请号：US10288958
申请日：2002-11-06
申请人： Hongyong Zhang , Masayuki Sakakura
发明人： Hongyong Zhang , Masayuki Sakakura
IPC分类号： G02F1133
CPC分类号： G06F1/1616 , G02F1/133 , G02F1/1339 , G02F1/1362 , G02F1/136277 , G02F2001/13312 , G06F1/1637 , G06F1/1686
摘要： A liquid crystal display apparatus containing an image sensor, which comprises a liquid crystal display part comprising an active matrix circuit, a peripheral driver circuit for driving the active matrix circuit, and a sensor part, integrated on one substrate, wherein the sensor part is sealed and protected with a sealing part and a counter substrate.

60. 发明授权

US06603455B1 Display panel drive circuit and display panel 有权
标题翻译：显示面板驱动电路和显示面板
公开(公告)号：US06603455B1
公开(公告)日：2003-08-05
申请号：US09176193
申请日：1998-10-21
申请人： Hongyong Zhang , Yosuke Tsukamoto , Yutaka Takafuji , Yasushi Kubota
发明人： Hongyong Zhang , Yosuke Tsukamoto , Yutaka Takafuji , Yasushi Kubota
IPC分类号： G09G336
CPC分类号： G09G3/3688 , G09G3/3677
摘要： A display panel drive circuit and a display panel are provided which are simple in structure but free from initial failure leading to impossibility to perform scanning. The display panel drive circuit of the present invention is structured such that thin film transistors constituting a signal input circuit connected to a circuit outside the display panel are formed in a structure having a dielectric breakdown strength higher than those of thin film transistors constituting other circuits. Specifically, countermeasures are taken by transistor formation in multi-gate structure, gate width broadening, resistance insertion between an input terminal and a transistor or the like. In the present invention, the circuit to which signals are externally inputted or thin film transistors of the same circuit is structured to withstand high voltage, thereby preventing the transistors from being deteriorated by high voltage and occurrence of initial failure while being simple in structure.
摘要翻译：提供了一种显示面板驱动电路和显示面板，其结构简单，但没有初始故障，导致不可能执行扫描。本发明的显示面板驱动电路被构造成使得构成与显示面板外部的电路连接的信号输入电路的薄膜晶体管形成为具有高于构成其它电路的薄膜晶体管的介电击穿强度的结构。具体地，通过多栅极结构中的晶体管形成，栅极宽度加宽，输入端子和晶体管之间的电阻插入等来采取对策。在本发明中，外部输入信号的电路或同一电路的薄膜晶体管被构造为承受高电压，从而防止晶体管在结构简单的同时由于高电压和初始故障的发生而劣化。

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