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1. 发明授权

US06235122B1 Cleaning method and cleaning apparatus of silicon 失效
标题翻译：硅的清洗方法和清洗装置
公开(公告)号：US06235122B1
公开(公告)日：2001-05-22
申请号：US09103813
申请日：1998-06-24
申请人： Hongyong Zhang , Masayuki Sakakura , Yuugo Goto
发明人： Hongyong Zhang , Masayuki Sakakura , Yuugo Goto
IPC分类号： B08B308
CPC分类号： H01L21/02052
摘要： In a cleaning method and a cleaning apparatus of a silicon substrate, after wet cleaning or etching of the substrate having a silicon surface is carried out, and during or after a pure water rinse of the substrate, an oxide film with a thickness of 10 to 30 Å is formed on the silicon surface by rinsing the substrate by pure water added with an oxidizer, and then the substrate is dried. Since drying is carried out after the oxide film is formed on the silicon surface, the occurrence of a water mark can be prevented.
摘要翻译：在硅衬底的清洁方法和清洁装置中，在对具有硅表面的衬底进行湿清洗或蚀刻之后，在衬底的纯水冲洗之前或之后，将厚度为10至通过用添加有氧化剂的纯水冲洗基材，在硅表面上形成30埃，然后将基材干燥。由于在硅表面上形成氧化膜之后进行干燥，因此可以防止发生水痕。

2. 发明授权

US06696326B2 Cleaning method to prevent watermarks 有权
标题翻译：防止水印的清洗方法
公开(公告)号：US06696326B2
公开(公告)日：2004-02-24
申请号：US09832866
申请日：2001-04-12
申请人： Hongyong Zhang , Masayuki Sakakura , Yuugo Goto
发明人： Hongyong Zhang , Masayuki Sakakura , Yuugo Goto
IPC分类号： H01L2184
CPC分类号： H01L21/02052
摘要： In a cleaning method and a cleaning apparatus of a silicon substrate, after wet cleaning or etching of the substrate having a silicon surface is carried out, and during or after a pure water rinse of the substrate, an oxide film with a thickness of 10 to 30 Å is formed on the silicon surface by rinsing the substrate by pure water added with an oxidizer, and then the substrate is dried. Since drying is carried out after the oxide film is formed on the silicon surface, the occurrence of a water mark can be prevented.
摘要翻译：在硅衬底的清洁方法和清洁装置中，在对具有硅表面的衬底进行湿清洗或蚀刻之后，在衬底的纯水冲洗之前或之后，将厚度为10至通过用添加有氧化剂的纯水冲洗基材，在硅表面上形成30埃，然后将基材干燥。由于在硅表面上形成氧化膜之后进行干燥，因此可以防止发生水痕。

3. 发明授权

US5837619A Method of fabricating semiconductor device and method of processing substrate 失效
公开(公告)号：US5837619A
公开(公告)日：1998-11-17
申请号：US552678
申请日：1995-11-03
申请人： Hiroki Adachi , Yuugo Goto , Hongyong Zhang , Toru Takayama
发明人： Hiroki Adachi , Yuugo Goto , Hongyong Zhang , Toru Takayama
IPC分类号： H01L21/20 , H01L21/336 , H01L21/77 , H01L21/84 , H01L21/324
CPC分类号： H01L27/1214 , H01L21/02422 , H01L21/02458 , H01L21/02488 , H01L21/02532 , H01L21/02672 , H01L27/1262 , H01L27/1277 , H01L29/66757 , Y10S148/016 , Y10S438/974
摘要： Method of fabricating a semiconductor device. A glass substrate such as Corning 7059 is used as a substrate. A bottom film is formed. Then, the substrate is annealed above the strain point of the glass substrate. The substrate is then slowly cooled below the strain point. Thereafter, a silicon film is formed, and a TFT is formed. The aforementioned anneal and slow cooling reduce shrinkage of the substrate created in later thermal treatment steps. This makes it easy to perform mask alignments. Furthermore, defects due to misalignment of masks are reduced, and the production yield is enhanced. In another method, a glass substrate made of Corning 7059 is also used as a substrate. The substrate is annealed above the strain point. Then, the substrate is rapidly cooled below the strain point. Thereafter, a bottom film is formed, and a TFT is fabricated. The aforementioned anneal and slow cooling reduce shrinkage of the substrate created in later thermal treatment steps. Thus, less cracks are created in the active layer of the TFT and in the bottom film. This improves the production yield. During heating of the substrate, it is held substantially horizontal to reduce warpage, distortions, and waviness of the substrate.

4. 发明授权

US6025607A Thin-film transistor and liquid crystal display device 失效
标题翻译：薄膜晶体管和液晶显示装置
公开(公告)号：US6025607A
公开(公告)日：2000-02-15
申请号：US842301
申请日：1997-05-05
申请人： Tatsuya Ohori , Michiko Takei , Hongyong Zhang , Yuugo Goto
发明人： Tatsuya Ohori , Michiko Takei , Hongyong Zhang , Yuugo Goto
IPC分类号： G02F1/1343 , G02F1/136 , G02F1/1368 , H01L21/266 , H01L21/336 , H01L29/786 , H01L31/0392
CPC分类号： H01L29/66757
摘要： A polysilicon pattern constituting an active portion of a TFT is formed on a substrate so as to be curved to generally assume a U shape, and a gate pattern is formed as a straight conductor pattern. The gate pattern is so disposed as to cross the U-shaped polysilicon pattern plural times. The silicon pattern comprise a plurality of channel regions and impurity regions of which alignment is symmetrical.
摘要翻译：构成TFT的有源部分的多晶硅图案形成在基板上，以弯曲成大致呈U字状，并且栅极图案形成为直导体图案。栅极图案被设置成多次跨越U形多晶硅图案。硅图案包括多个通道区域和其对准的对称的杂质区域。

5. 发明授权

US5492843A Method of fabricating semiconductor device and method of processing substrate 失效
标题翻译：制造半导体器件的方法和处理衬底的方法
公开(公告)号：US5492843A
公开(公告)日：1996-02-20
申请号：US282598
申请日：1994-07-29
申请人： Hiroki Adachi , Yuugo Goto , Hongyong Zhang , Toru Takayama
发明人： Hiroki Adachi , Yuugo Goto , Hongyong Zhang , Toru Takayama
IPC分类号： H01L21/20 , H01L21/336 , H01L21/77 , H01L21/84 , H01L21/324
CPC分类号： H01L27/1214 , H01L21/02422 , H01L21/02458 , H01L21/02488 , H01L21/02532 , H01L21/02672 , H01L27/1262 , H01L27/1277 , H01L29/66757 , Y10S148/016 , Y10S438/974
摘要： Method of fabricating a semiconductor device. A glass substrate such as Corning 7059 is used as a substrate. A bottom film is formed. Then, the substrate is annealed above the strain point of the glass substrate. The substrate is then slowly cooled below the strain point. Thereafter, a silicon film is formed, and a TFT is formed. The aforementioned anneal and slow cooling reduce shrinkage of the substrate created in later thermal treatment steps. This makes it easy to perform mask alignments. Furthermore, defects due to misalignment of masks are reduced, and the production yield is enhanced. In another method, a glass substrate made of Corning 7059 is also used as a substrate. The substrate is annealed above the strain point. Then, the substrate is rapidly cooled below the strain point. Thereafter, a bottom film is formed, and a TFT is fabricated. The aforementioned anneal and slow cooling reduce shrinkage of the substrate created in later thermal treatment steps. Thus, less cracks are created in the active layer of the TFT and in the bottom film. This improves the production yield. During heating of the substrate, it is held substantially horizontal to reduce warpage, distortions, and waviness of the substrate.
摘要翻译：制造半导体器件的方法使用诸如Corning 7059的玻璃基板作为基板。形成底部薄膜。然后，将基板在玻璃基板的应变点之上退火。然后将基材缓慢冷却至应变点以下。之后，形成硅膜，形成TFT。上述退火和缓慢冷却减少了后续热处理步骤中产生的基板的收缩。这使得轻松执行掩模对齐。此外，由于掩模的未对准而导致的缺陷减少，生产率提高。在另一种方法中，还使用由Corning 7059制成的玻璃基板作为基板。衬底在应变点之上退火。然后，将基材快速冷却到应变点以下。然后，形成底膜，制作TFT。上述退火和缓慢冷却减少了后续热处理步骤中产生的基板的收缩。因此，在TFT的有源层和底部膜中产生较少的裂纹。这提高了产量。在加热基材期间，其保持基本水平，以减少基材的翘曲，变形和波纹。

6. 发明授权

US07528912B2 Liquid crystal display apparatus containing image sensor and process for producing the same 失效
公开(公告)号：US07528912B2
公开(公告)日：2009-05-05
申请号：US11641516
申请日：2006-12-19
申请人： Hongyong Zhang , Masayuki Sakakura
发明人： Hongyong Zhang , Masayuki Sakakura
IPC分类号： G02F1/1333 , G02F1/136
CPC分类号： G06F1/1616 , G02F1/133 , G02F1/1339 , G02F1/1362 , G02F1/136277 , G02F2001/13312 , G06F1/1637 , G06F1/1686
摘要： A liquid crystal display apparatus containing an image sensor, which comprises a liquid crystal display part comprising an active matrix circuit, a peripheral driver circuit for driving the active matrix circuit, and a sensor part, integrated on one substrate, wherein the sensor part is sealed and protected with a sealing part and a counter substrate.

7. 发明授权

US07286173B2 Image sensor and image sensor integrated type active matrix type display device 有权
标题翻译：图像传感器和图像传感器集成式有源矩阵型显示装置
公开(公告)号：US07286173B2
公开(公告)日：2007-10-23
申请号：US11418279
申请日：2006-05-04
申请人： Hongyong Zhang , Masayuki Sakakura , Yurika Satou
发明人： Hongyong Zhang , Masayuki Sakakura , Yurika Satou
IPC分类号： H04N3/14
CPC分类号： H01L27/14643 , G02F1/1345 , G02F1/136286 , G02F2001/13312 , H01L27/124 , H01L27/14634
摘要： To fabricate an active matrix type display device integrated with an image sensor at a low cost and without complicating process, an image sensor laminated with TFT and a light receiving unit is formed on a light receiving matrix, a display matrix is arranged with TFT and pixel electrodes on a matrix and formed with an electrode layer functioning as a black matrix, a lower electrode of the light receiving unit is formed by a starting film the same as that of the black matrix, a terminal for fixing potential of an upper electrode is formed by starting films the same as those of a signal line, the electrode layer or pixel electrodes and the terminals function also as shield electrodes for a side face of the light receiving unit since potential thereof is fixed.
摘要翻译：为了以低成本制造与图像传感器集成的有源矩阵型显示装置，并没有复杂的过程，在光接收矩阵上形成层叠有TFT和光接收单元的图像传感器，显示矩阵布置有TFT和像素形成有用作黑矩阵的电极层的电极，受光单元的下电极由与黑矩阵相同的起始膜形成，形成用于固定上电极的电位的端子通过开始与信号线相同的膜，电极层或像素电极和端子也用作光接收单元的侧面的屏蔽电极，因为其电位固定。

8. 发明授权

US06937306B2 Liquid crystal display apparatus containing image sensor and process for producing the same 失效
公开(公告)号：US06937306B2
公开(公告)日：2005-08-30
申请号：US10743482
申请日：2003-12-22
申请人： Hongyong Zhang , Masayuki Sakakura
发明人： Hongyong Zhang , Masayuki Sakakura
IPC分类号： G02F1/1339 , G02F1/133 , G02F1/1333 , G02F1/136 , G02F1/1362 , G02F1/1368 , G06F1/16 , G09F9/30
CPC分类号： G06F1/1616 , G02F1/133 , G02F1/1339 , G02F1/1362 , G02F1/136277 , G02F2001/13312 , G06F1/1637 , G06F1/1686
摘要： A liquid crystal display apparatus containing an image sensor, which comprises a liquid crystal display part comprising an active matrix circuit, a peripheral driver circuit for driving the active matrix circuit, and a sensor part, integrated on one substrate, wherein the sensor part is sealed and protected with a sealing part and a counter substrate.

9. 发明授权

US06423569B1 Photoelectric converter and fabrication method thereof 有权
公开(公告)号：US06423569B1
公开(公告)日：2002-07-23
申请号：US09882611
申请日：2001-06-15
申请人： Hongyong Zhang , Masayuki Sakakura
发明人： Hongyong Zhang , Masayuki Sakakura
IPC分类号： H01L2100
摘要： There is provided a laminated type photoelectric converter whose sensitivity is enhanced uniformly. In the photoelectric converter in which a photoelectric conversion device is laminated above a signal transfer device, the sensitivity is enhanced by providing bends on a lower electrode of the photoelectric conversion device and by confining light uniformly.

10. 发明授权

US06399933B2 Active matrix display device and method of manufacturing the same 有权
公开(公告)号：US06399933B2
公开(公告)日：2002-06-04
申请号：US09908794
申请日：2001-07-20
申请人： Hongyong Zhang , Masayuki Sakakura
发明人： Hongyong Zhang , Masayuki Sakakura
IPC分类号： H01L2700
CPC分类号： H01L27/1214 , G02F1/13454 , G02F2001/13312 , G02F2001/13324 , H01L27/142 , H01L27/14632 , H01L27/14636 , H01L27/14665 , H01L27/14678 , H01L27/14687 , H01L27/14692 , H01L31/02164 , Y02E10/50
摘要： In an active matrix display device integrated with peripheral drive circuits, an image sensor is provided on the same substrate as a pixel matrix and peripheral drive circuits. The image sensor is formed on the substrate having pixel electrodes, pixel TFTs connected to the pixel electrodes and CMOS-TFTs for driving the pixel TFTs. The light receiving unit of the image sensor has light receiving elements having a photoelectric conversion layer and light receiving TFTs. These TFTs are produced in the same step. The lower electrode and transparent electrode of the light receiving element are produced by patterning the same film as the light shielding film and the pixel electrodes arranged in the pixel matrix.

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