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    • 52. 发明授权
    • Method for fabricating an electrode arrangement for charge storage
    • 用于制造用于电荷存储的电极装置的方法
    • US06821861B1
    • 2004-11-23
    • US10631554
    • 2003-07-31
    • Matthias GoldbachThomas Hecht
    • Matthias GoldbachThomas Hecht
    • H01L2120
    • H01L27/10861H01L27/10867
    • The invention relates to an electrode arrangement for charge storage with an external trench electrode (202; 406), embodied along the wall of a trench provided in a substrate (401) and electrically insulated on both sides in the trench by a first and a second dielectric (104; 405, 409); an internal trench electrode (201; 410), serving as counter-electrode to the external trench electrode (201; 406) and insulated by the second dielectric (104; 409) and a substrate electrode (201; 403), which is insulated by the first dielectric (104; 405) outside the trench, which serves as counter-electrode to the external trench electrode (202; 406) and is connected to the internal trench electrode (201; 410) in the upper trench region.
    • 本发明涉及一种用于电荷存储的电极装置,其具有外部沟槽电极(202; 406),其沿着设置在衬底(401)中的沟槽的壁体现,并且在沟槽的两侧通过第一和第二 电介质(104; 405,409); 用作与所述外部沟槽电极(201; 406)相反并被所述第二电介质(104,409)绝缘的对电极的内部沟槽电极(201; 410)和由所述第二电介质(104; 409)绝缘的衬底电极 在沟槽外部的第一电介质(104; 405),其用作与外部沟槽电极(202; 406)的对电极,并且连接到上部沟槽区域中的内部沟槽电极(201; 410)。
    • 53. 发明授权
    • Method for producing and/or renewing an etching mask
    • 用于制造和/或更新蚀刻掩模的方法
    • US06806037B2
    • 2004-10-19
    • US10167785
    • 2002-06-12
    • Matthias GoldbachThomas HechtBernhard Sell
    • Matthias GoldbachThomas HechtBernhard Sell
    • G03F726
    • H01L21/3086H01L21/3081H01L21/3085
    • An etching mask is produced for etching a substrate by a photoresist layer being exposed such that areas which are exposed once are not yet completely exposed and, on the basis of a reflective layer which is located under the photoresist layer, additionally exposed areas are exposed completely. In consequence, a first etching mask which is used for etching a substrate can be renewed by a second etching mask in that a photoresist layer which is applied to the first etching mask or instead of the first etching mask is exposed such that areas which have been exposed once are not yet completely exposed, and areas which have been additionally exposed on the basis of a reflective layer which is located under the photoresist layer and corresponds to the first etching mask are exposed completely.
    • 制造用于通过曝光的光致抗蚀剂层蚀刻基板的蚀刻掩模,使得暴露一次的区域尚未完全曝光,并且基于位于光致抗蚀剂层下方的反射层,额外暴露的区域完全暴露 。 因此,用于蚀刻衬底的第一蚀刻掩模可以通过第二蚀刻掩模来更新,因为施加到第一蚀刻掩模或代替第一蚀刻掩模的光致抗蚀剂层被暴露,使得已经被 曝光一次还未完全曝光,并且基于位于光致抗蚀剂层下方并对应于第一蚀刻掩模的反射层另外暴露的区域被完全暴露。