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51. 发明申请

US20050226295A1 Semiconductor laser device 有权
标题翻译：半导体激光器件
公开(公告)号：US20050226295A1
公开(公告)日：2005-10-13
申请号：US10510324
申请日：2003-03-26
申请人： Mototaka Taneya , Yukio Yamasaki , Shigetoshi Ito
发明人： Mototaka Taneya , Yukio Yamasaki , Shigetoshi Ito
IPC分类号： H01S5/20 , H01S5/00
CPC分类号： H01S5/20
摘要： A semiconductor laser device having a waveguide constructed in a stack of layers including, on a substrate transparent and having a refractive index ns for laser light, a first clad layer of a refractive index nc1, a second clad layer of a refractive index nc2, a third clad layer of a refractive index nc3, a first conductivity type guide layer of a refractive index ng, an active quantum well layer, a second conductivity type guide layer, a second conductivity type clad layer, and a second conductivity type contact layer deposited in this order, wherein the waveguide has an effective refractive index ne, and a relationship of nc2
摘要翻译：一种半导体激光器件，其具有以堆叠层构成的波导，所述波导包括在透明且具有用于激光的折射率n _{的衬底上的折射率n C 1的第一覆盖层折射率为n3c2的第二覆盖层，折射率为n3c3的第三覆盖层，折射率为n3c3的第一导电型引导层，指数n N，有源量子阱层，第二导电型导向层，第二导电型覆盖层和第二导电型接触层，其中波导具有有效的折射率（N c1，n3，c3，...，n3）的关系，N _{> N（N N，N，N）满足。}}

52. 发明申请

US20050141577A1 Nitride semiconductor light-emitting device, method of fabricating it, and semiconductor optical apparatus 有权
标题翻译：氮化物半导体发光元件及其制造方法以及半导体光学装置
公开(公告)号：US20050141577A1
公开(公告)日：2005-06-30
申请号：US10831659
申请日：2004-04-26
申请人： Yoshihiro Ueta , Teruyoshi Takakura , Takeshi Kamikawa , Yuhzoh Tsuda , Shigetoshi Ito , Takayuki Yuasa , Mototaka Taneya , Kensaku Motoki
发明人： Yoshihiro Ueta , Teruyoshi Takakura , Takeshi Kamikawa , Yuhzoh Tsuda , Shigetoshi Ito , Takayuki Yuasa , Mototaka Taneya , Kensaku Motoki
IPC分类号： H01S5/00 , H01S5/02 , H01S5/22 , H01S5/32 , H01S5/343
CPC分类号： B82Y20/00 , H01S5/0207 , H01S5/2201 , H01S5/3202 , H01S5/34333 , H01S2304/12
摘要： A nitride semiconductor laser device has a nitride semiconductor substrate that includes a dislocation-concentrated region 102 and a wide low-dislocation region and that has the top surface thereof slanted at an angle in the range of 0.3° to 0.7° relative to the C plane and a nitride semiconductor layer laid on top thereof. The nitride semiconductor layer has a depression immediately above the dislocation-concentrated region, and has, in a region thereof other than the depression, a high-quality quantum well active layer with good flatness and without cracks, a layer that, as is grown, readily exhibits p-type conductivity, and a stripe-shaped laser light waveguide region. The laser light waveguide region is formed above the low-dislocation region. This helps realize a nitride semiconductor laser device that offers a longer life.
摘要翻译：氮化物半导体激光器件具有氮化物半导体衬底，其包括位错集中区域102和宽低位错区域，并且其顶表面相对于C平面以0.3°至0.7°的范围内的角度倾斜和位于其顶部的氮化物半导体层。氮化物半导体层在位错集中区域正上方具有凹陷，并且在除了凹陷以外的区域中具有良好的平坦度且没有裂纹的高质量的量子阱活性层，易于显示p型导电性，以及条状激光波导区域。激光波导区域形成在低位错区域的上方。这有助于实现提供更长寿命的氮化物半导体激光器件。

53. 发明授权

US06455877B1 III-N compound semiconductor device 有权
标题翻译： III-N族化合物半导体器件
公开(公告)号：US06455877B1
公开(公告)日：2002-09-24
申请号：US09657875
申请日：2000-09-08
申请人： Atsushi Ogawa , Takayuki Yuasa , Yoshihiro Ueta , Yuhzoh Tsuda , Masahiro Araki , Mototaka Taneya
发明人： Atsushi Ogawa , Takayuki Yuasa , Yoshihiro Ueta , Yuhzoh Tsuda , Masahiro Araki , Mototaka Taneya
IPC分类号： H01L3300
CPC分类号： H01L33/32 , H01L33/025 , H01S5/0421 , H01S5/0425 , H01S5/32341
摘要： A GaN light-emitting device is provided having a low specific contact resistance of an n-type electrode as well as a low threshold voltage or threshold current density. The GaN light-emitting device has an electrode formed on a nitrogen-terminated surface of a GaN substrate. Specifically, the GaN light-emitting device includes the GaN substrate, a plurality of GaN compound semiconductor layers formed on the GaN substrate, and the n-type electrode and a p-type electrode, wherein the semiconductor substrate is of n-type and the n-type electrode is formed on the nitrogen-terminated surface of the semiconductor substrate. The concentration of n-type impurities in the substrate preferably ranges from 1×1017 cm−3 to 1×1021 cm−3. The substrate preferably includes at least a first portion forming the nitrogen-terminated surface and having a first concentration of n-type impurities and a second portion having a second concentration of n-type impurities lower than the first concentration of n-type impurities.
摘要翻译：提供具有n型电极的低比接触电阻以及低阈值电压或阈值电流密度的GaN发光器件。 GaN发光器件具有形成在GaN衬底的氮封端表面上的电极。具体地，GaN发光器件包括GaN衬底，形成在GaN衬底上的多个GaN化合物半导体层，以及n型电极和p型电极，其中半导体衬底为n型， n型电极形成在半导体衬底的氮封端表面上。衬底中n型杂质的浓度优选为1×10 17 cm -3至1×10 21 cm -3。基板优选至少包括形成氮封端表面并具有第一浓度的n型杂质的第一部分和具有比第一浓度的n型杂质低的n型杂质的第二浓度的第二部分。

54. 发明授权

US5880028A Ridge waveguide type distributed feedback semiconductor laser device and method for manufacturing the same 失效
标题翻译：脊波导型分布反馈半导体激光器件及其制造方法
公开(公告)号：US5880028A
公开(公告)日：1999-03-09
申请号：US700555
申请日：1996-08-07
申请人： Kei Yamamoto , Takuma Hiramatsu , Koji Takahashi , Mototaka Taneya
发明人： Kei Yamamoto , Takuma Hiramatsu , Koji Takahashi , Mototaka Taneya
IPC分类号： H01S5/00 , H01S5/12 , H01S5/22 , H01L21/302
CPC分类号： H01S5/12 , H01S5/22
摘要： A ridge waveguide type distributed feedback semiconductor laser device includes a diffraction grating formed on a surface of a semiconductor wafer, a semiconductor layer formed on the diffraction grating, the semiconductor layer serving to alleviate the irregularity of the diffraction grating, and a stripe-like ridge having a cladding layer and a contact layer formed on the semiconductor layer. Also, a method for manufacturing the ridge waveguide type distributed feedback semiconductor laser device is disclosed.
摘要翻译：脊波导型分布反馈半导体激光器件包括形成在半导体晶片的表面上的衍射光栅，形成在衍射光栅上的半导体层，用于减轻衍射光栅的不规则性的半导体层和条状脊具有在半导体层上形成的覆层和接触层。此外，公开了一种用于制造脊波导型分布反馈半导体激光器件的方法。

55. 发明授权

US5727015A Distributed feedback semiconductor laser 失效
标题翻译：分布式反馈半导体激光器
公开(公告)号：US5727015A
公开(公告)日：1998-03-10
申请号：US611792
申请日：1996-03-06
申请人： Koji Takahashi , Fumihiro Kounushi , Mototaka Taneya
发明人： Koji Takahashi , Fumihiro Kounushi , Mototaka Taneya
IPC分类号： H01S5/00 , H01S5/12 , H01S3/1055
CPC分类号： H01S5/1228
摘要： A gain coupled distributed feedback semiconductor laser includes an active layer and a diffraction grating provided in the vicinity of the active layer and having a plurality of light absorption layers periodically arranged along a resonator length direction. The order of the diffraction grating is one, a duty of the diffraction grating is in the range of about 0.4 to about 0.8, and a thickness of the light absorption layer is in the range of about 6 nm to about 30 nm.
摘要翻译：增益耦合分布反馈半导体激光器包括设置在有源层附近的有源层和衍射光栅，并具有沿着谐振器长度方向周期性排列的多个光吸收层。衍射光栅的顺序是一个，衍射光栅的占空比在约0.4至约0.8的范围内，并且光吸收层的厚度在约6nm至约30nm的范围内。

56. 发明授权

US5436884A Optical data reading apparatus and an optical data reading method 失效
标题翻译：光学数据读取装置和光学数据读取方法
公开(公告)号：US5436884A
公开(公告)日：1995-07-25
申请号：US125473
申请日：1993-09-22
申请人： Mototaka Taneya
发明人： Mototaka Taneya
IPC分类号： G11B7/005 , G11B7/135 , G11B11/10 , G11B11/105 , G11B5/09
CPC分类号： G11B11/10545 , G11B11/10515 , G11B7/005 , G11B7/135
摘要： According to the optical data reading apparatus and an optical data reading method of the present invention, a semiconductor laser emits laser light while periodically modulating a frequency or a phase thereof. The laser light is divided into a first beam to be radiated to a magnetooptical disc and a second beam. The first and the second beams run along optical paths having different lengths from each other, and thus have different frequencies or phases from each other. The first beam reflected by the magnetooptical disc and the second beam are mixed and then incident on a photodetector. An electric output extracted from the photodetector based on a frequency difference or a phase difference between the first and the second beams, and thus data stored in the magnetooptic disc is restored.
摘要翻译：根据本发明的光学数据读取装置和光学数据读取方法，半导体激光器在周期性地调制其频率或相位的同时发射激光。激光被分成要被辐射到磁光盘和第二光束的第一光束。第一和第二光束沿着具有彼此不同长度的光路延伸，并且因此彼此具有不同的频率或相位。由磁光盘和第二光束反射的第一光束被混合，然后入射到光电检测器上。基于第一和第二光束之间的频率差或相位差从光电检测器提取的电输出，从而恢复存储在磁光盘中的数据。

57. 发明授权

US5140653A Optical head for a laser printer 失效
标题翻译：激光打印机的光学头
公开(公告)号：US5140653A
公开(公告)日：1992-08-18
申请号：US703252
申请日：1991-05-20
申请人： Mototaka Taneya
发明人： Mototaka Taneya
IPC分类号： B41J2/44 , B41J2/47 , G02F1/01 , G02F1/295 , G02F1/313 , G03G15/04 , H01S5/026
CPC分类号： G02F1/295 , B41J2/471 , H01S5/0265
摘要： Light beams emitted from a semiconductor laser are introduced into an optical guide. The light beams linearly passing inside the optical guide are radiated one after another in the direction substantially perpendicular to the passing direction so as to be received by an optical modulator disposed on the optical guide over the length thereof, where the light beams are selectively modulated and then radiated out throughout the length thereof.

58. 发明授权

US4994140A Method capable of forming a fine pattern without crystal defects 失效
标题翻译：能够形成没有晶体缺陷的精细图案的方法
公开(公告)号：US4994140A
公开(公告)日：1991-02-19
申请号：US463205
申请日：1990-01-10
申请人： Akita Kenzo , Mototaka Taneya , Yoshimasa Sugimoto , Hiroshi Hidaka
发明人： Akita Kenzo , Mototaka Taneya , Yoshimasa Sugimoto , Hiroshi Hidaka
IPC分类号： H01L21/00 , H01L21/20 , H01L21/203 , H01L21/306 , H01L21/308 , H01L21/311 , H01L21/314 , H01L21/316 , H01L21/318 , H01L21/768
CPC分类号： H01L21/76877 , H01L21/02392 , H01L21/02395 , H01L21/02461 , H01L21/02463 , H01L21/02543 , H01L21/02546 , H01L21/02549 , H01L21/02631 , H01L21/02658 , H01L21/02661 , H01L21/30621 , H01L21/3081 , H01L21/31116 , H01L21/314 , H01L21/31654 , H01L21/3185 , H01L21/67069
摘要： In a method of processing a compound semiconductor wafer to deposit or form a specific layer on a wafer surface, to partially remove the specific layer to partially expose the wafer surface, and to etch a partially exposed area of the wafer, etching is performed by irradiating an electron beam and a specific gas which may be, for example, chlorine gas, bromine gas, iodine, or their compounds. Portions subjected to irradiation of both the electron beam and the specific gas are etched from the wafer. The specific layer is deposited or formed in the form of an oxide layer on the wafer surface by spraying an oxygen gas onto the wafer surface with light irradiated on the wafer surface. Such an oxide layer may be either an adsorbed molecular layer of the oxygen gas or a chemically reacted layer which results from reaction of the oxygen gas with the wafer by the help of irradiation of the light. Alternatively, the specific layer may be either a sulphide layer or a nitride layer. The specific layer and the wafer may be removed and etched by the use of different gases which may be a hydrogen gas and a chlorine gas, respectively. In addition, the above-mentioned processing may be carried out without exposure of the wafer to air by the use of an apparatus which comprises a plurality of rooms or chambers airtightly coupled to one another.
摘要翻译：在化合物半导体晶片处理以沉积或形成晶片表面上的特定层的方法中，为了部分去除特定层以部分地暴露晶片表面，并蚀刻晶片的部分曝光区域，通过照射电子束和特定气体，其可以是例如氯气，溴气，碘或它们的化合物。从晶片上蚀刻经受电子束和特定气体的照射的部分。通过用照射在晶片表面上的光将氧气喷射到晶片表面上，在晶片表面上以氧化物层的形式沉积或形成特定层。这样的氧化物层可以是氧气的吸附分子层或通过借助照射光而使氧气与晶片的反应产生的化学反应层。或者，特定层可以是硫化物层或氮化物层。可以通过使用分别为氢气和氯气的不同气体来去除和蚀刻特定层和晶片。此外，可以通过使用包括彼此气密地联接的多个房间或室的设备来进行上述处理而不将晶片暴露于空气。

59. 发明授权

US4914669A Semiconductor laser array apparatus 失效
标题翻译：半导体激光阵列装置
公开(公告)号：US4914669A
公开(公告)日：1990-04-03
申请号：US222968
申请日：1988-07-22
申请人： Sadayoshi Matsui , Mototaka Taneya , Mitsuhiro Matsumoto , Hiroyuki Hosoba
发明人： Sadayoshi Matsui , Mototaka Taneya , Mitsuhiro Matsumoto , Hiroyuki Hosoba
IPC分类号： H01S5/00 , H01S5/028 , H01S5/10 , H01S5/40
CPC分类号： H01S5/4031 , H01S5/028 , H01S5/1028 , H01S5/1032
摘要： A semiconductor laser array apparatus comprising a single substrate and a plurality of semiconductor laser devices that are disposed with a given pitch on the substrate, some of the semiconductor laser devices constituting laser devices of a laser oscillation-operating area of the semiconductor laser array apparatus and the other semiconductor laser devices constituting laser devices of the non-laser oscillation-operating areas that are positioned outside of the laser oscillation-operating area, wherein the oscillation threshold current level of at least one of the semiconductor laser devices of each of the non-laser oscillation-operating areas that is the closest to the laser oscillation-operating area is higher than those of the semiconductor laser devices of the laser oscillation-operating area.

60. 发明授权

US4819245A Semiconductor laser device having substriped channels for forming an active layer which is thin in an inside portion 失效
标题翻译：具有用于形成在内部较薄的有源层的分流通道的半导体激光器件
公开(公告)号：US4819245A
公开(公告)日：1989-04-04
申请号：US854627
申请日：1986-04-22
申请人： Taiji Morimoto , Mototaka Taneya , Hiroshi Hayashi , Saburo Yamamoto
发明人： Taiji Morimoto , Mototaka Taneya , Hiroshi Hayashi , Saburo Yamamoto
IPC分类号： H01S5/16 , H01S5/223 , H01S3/19
CPC分类号： H01S5/16 , H01S5/2232 , H01S5/2234
摘要： A semiconductor laser device comprises a substrate having a main striped channel for confining current therein and sub-striped channels formed in a parallel manner outside of the main striped channel. The width of the sub-striped channels is greater than that of the main striped channel. An active layer is provided for laser oscillation. The portion of the active layer corresponding to the sub-striped channels are formed into a concave portion. The portion of the active layer positioned between the concaved portions of the active layer results in a plane with a limited thickness.
摘要翻译：半导体激光器件包括具有用于限制电流的主条纹沟道的衬底和在主条纹沟道外部并行形成的子条纹沟道。子条带通道的宽度大于主条带通道的宽度。为激光振荡提供有源层。对应于子条纹通道的有源层的部分形成为凹入部分。位于有源层的凹部之间的有源层的部分导致具有有限厚度的平面。

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