专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

51. 发明专利

JPS61104169A Helium feed/discharge device for cryopump 失效
标题翻译：用于CRYOPUMP的HELIUM FEED / DISCHARGE DEVICE
公开(公告)号：JPS61104169A
公开(公告)日：1986-05-22
申请号：JP22401184
申请日：1984-10-26
申请人： Hitachi Ltd
发明人： ONO YOICHI , OISHI SEITARO
IPC分类号： H05H1/22 , F04B37/08
摘要： PURPOSE: To enhance the efficiency of cooling, by laying by-pass pipes upward from a forward feed line, connecting the by-pass pipes to each other through a valve, and laying liquefied helium transfer pipes downward from the forward feed line.
CONSTITUTION: By-pass pipes 20, 21 are laid upward from a forward feed line 6 and connected to each other through a by-pass valve 22. Transfer pipes 7W9 for feeding liquefied helium to cryopumps 10W12 are laid downward from the forward feed line 6. As a result, helium evaporated by heat having entered into the transfer pipes 7W9 is retrieved so as to feed only the liquefied helium to the cryopumps 10W12 to enhance the efficiency of cooling of the cryopumps.
COPYRIGHT: (C)1986,JPO&Japio
摘要翻译：目的：为了提高冷却效率，通过从正向进料管向上铺设旁通管，通过阀将旁通管相互连接，并从前进进料管向下铺设液化氦传输管。构成：旁通管20,21从前进给料管线6向上放置，并通过旁通阀22彼此连接。用于将液化氦送入低温泵10-12的输送管7-9从因此，通过进入输送管7-9的热量蒸发的氦被回收，以便只将液化的氦送入低温泵10-12，以提高低温泵的冷却效率。

52. 发明专利

JP2002075968A ION BEAM MACHINING SYSTEM AND PROCESSING METHOD OF SUBSTRATE 失效
公开(公告)号：JP2002075968A
公开(公告)日：2002-03-15
申请号：JP2000260160
申请日：2000-08-30
申请人： HITACHI LTD
发明人： SUGIURA TAKAHARU , HISAMOTO HIROSHI , OGURA SATOSHI , OISHI SEITARO
IPC分类号： B23K15/00 , B23K101/40 , H01J37/09 , H01J37/305 , H01L21/302 , H01L21/3065
摘要： PROBLEM TO BE SOLVED: To obtain an ion beam machining system in which a fine pattern thin element can be machined by preventing charge up on the surface of a substrate at the time of opening/closing a shutter plate thereby suppressing electrostatic breakdown of the element. SOLUTION: The ion beam machining system comprises an ion source 12 being introduced with gas and generating plasma, an ion source electrode 19 for leading out plasma generated by the ion source 12 as an ion beam IB, a unit 20 for neutralizing the ion beam IB, a processing chamber 15 for milling a substrate 13 placed therein by irradiating it with the ion beam IB, an evacuator 16 for evacuating the processing chamber 15, and a shutter plate 22 for shielding the substrate 13 from the ion beam IB before and after ion beam machining. A power supply 23 for applying a voltage to the shutter plate 22 at the time of opening/closing the shutter plate 22 is provided and the magnitude and timing of the applying voltage are controlled by means of a power supply controller 24.

53. 发明专利

JP2000252344A SUBSTRATE HOLDING DEVICE AND ION BEAM WORKING APPARATUS 失效
公开(公告)号：JP2000252344A
公开(公告)日：2000-09-14
申请号：JP5245199
申请日：1999-03-01
申请人： HITACHI LTD
发明人： KIMURA YOSHIHIRO , OISHI SEITARO , ARIMATSU KEIJI
IPC分类号： H01L21/677 , C23C14/46 , C23C14/50 , H01L21/203 , H01L21/68
摘要： PROBLEM TO BE SOLVED: To easily replace a plurality of substrates in different sizes. SOLUTION: A substrate holding mechanism 30 which holds a 4-inch substrate 34 and a substrate holding mechanism 32 which holds a 5-inch substrate 35 are connected via a connecting plate 40. A shaft 42 is fixed to the central part of the connecting plate 40. The shaft 42 is connected to a motor 48 via a gear 46. Then, the motor 48 is driven, and the connecting plate 40 is turned by 180 deg.. The substrate holding mechanism 30 is moved to a standby position from a treatment position. The substrate holding mechanism 32 is moved to the treatment position from the standby position.

54. 发明专利

JPH11220009A ION-BEAM PROCESSING DEVICE 失效
公开(公告)号：JPH11220009A
公开(公告)日：1999-08-10
申请号：JP2174598
申请日：1998-02-03
申请人： HITACHI LTD
发明人： KONDO MASAKI , OISHI SEITARO , TANAKA SHIGERU , ONUKI HISAO
IPC分类号： H01L21/302 , H01L21/3065 , H01L21/68 , H01L21/683
摘要： PROBLEM TO BE SOLVED: To cope with the substrates having the different sizes, by providing the gas cooling mechanisms for a plurality of systems or more in correspondence with the sizes of the respective substrate in a sample holder. SOLUTION: This device is constituted of a common sample holder 22a for the substrates having the different sizes, two gas sealing ϕrings 55a and 55b in correspondence with each substrate and two systems of gas cooling mechanism. When a ϕ5" (diameter of 5 inches) substrate is processed, the substrate 21 is pushed with a substrate pushing plate, CMV2 , 51b, CMV4 and 51b are opened, and vacuum suction between the sample for the sample holder 22a is performed by RP1 , 54a, PR2 and 54b. Thereafter, CMV1 , 51a, CMV3 and 51c are opened, and cooling gas is supplied. When a ϕ4" substrate is processed, the substrate 21 is pushed with the substrate pushing plate, only CMB1 . CMV2 , 53b, PR1 , 54a, DG1 , 51a, PRV1 and 52a are operated, and CMV3 51c and CMV4 51d are opened. Thus, the countermeasure can be performed.

55. 发明专利

JPH11120927A ION SOURCE 失效
公开(公告)号：JPH11120927A
公开(公告)日：1999-04-30
申请号：JP28057697
申请日：1997-10-14
申请人： HITACHI LTD
发明人： KIMURA YOSHIHIRO , HASHIMOTO ISAO , SEKIMOTO SHINYA , OISHI SEITARO
IPC分类号： H01J27/02 , H01J27/08 , H01J37/08
摘要： PROBLEM TO BE SOLVED: To provide an ion source having a large-diameter ion source electrode capable of extracting a uniform and stable ion beam current. SOLUTION: This ion source is constituted of a plasma chamber generating ions and an accelerating electrode 6 and a decelerating electrode 7 arranged at a prescribed interval, combined with multiple tabular split electrodes, and having beam extraction holes for extracting ions from the plasma chamber. Since the accelerating electrode 6 and the decelerating electrode 7 are combined with the tabular split electrodes, the ion source is formed into a pyramidal shape with the center sections of the accelerating electrode 6 and the decelerating electrode 7 used as apexes.

56. 发明专利

JPH09306410A ION BEAM WORKING DEVICE 失效
公开(公告)号：JPH09306410A
公开(公告)日：1997-11-28
申请号：JP12051296
申请日：1996-05-15
申请人： HITACHI LTD
发明人： ONUKI HISAO , OISHI SEITARO , TANAKA SHIGERU
IPC分类号： H01J37/20 , C23F4/00 , H01J37/30 , H01L21/265 , H01L21/302
摘要： PROBLEM TO BE SOLVED: To provide an ion beam working device with high production efficiency and uniform high working accuracy by a simple structure. SOLUTION: In an automatic conveyer 6, a sample W stored in a preparation room 5 is conveyed to a processing room 4. In the case of this conveying, a gate valve 9 is opened/closed as necessary. A hold rotational mechanism 10 holds the conveyed sample W. The hold rotational mechanism 10, during working by an ion beam, makes the holding sample rotate on its own axis and revolve around. By opening/closing the gate valve 9 as necessary, the preparation room 5 and the processing room 4 are made to communicate/separate. In this way, the processing room 4 is left as held to vacuum, through a door 54, the sample W can be carried in/out to the preparation room 5. Reversely, the sample W is left as stored in the preparation room 5, through a door 40, part replacement or the like can be made in the processing room 4.

57. 发明专利

JPH09245715A ION BEAM MACHINING DEVICE 失效
公开(公告)号：JPH09245715A
公开(公告)日：1997-09-19
申请号：JP5718696
申请日：1996-03-14
申请人： HITACHI LTD
发明人： ONUKI HISAO , OISHI SEITARO
IPC分类号： H01J37/30
摘要： PROBLEM TO BE SOLVED: To enable the output of stable electrons even in the case of a mass beam current and an ion source with its large aperture by forming a neutralizer filament in a V-letter shape and arranging it crossing roughly vertically toward the radiation direction of ion beams. SOLUTION: In order to neutralize ion beams, it is necessary to heat (carry a current in) a filament of a neutralizer ray 18. This electron quantity is parallel to the area of the filament of the neutralizer ray 18, and the longer length increases the electron quantities to be discharged. By forming an U-letter shaped filament of the neutralizer ray 18, the linear winding distance is twice and the electron quantity increases. Thereby the service life of the filament of the neutralizer ray 18 is expanded, and the power supply is reduced.

58. 发明专利

JPH08250472A SUBSTRATE HOLDER 失效
公开(公告)号：JPH08250472A
公开(公告)日：1996-09-27
申请号：JP5089595
申请日：1995-03-10
申请人： HITACHI LTD
发明人： MUKU YASUTAKA , ISHIKAWA YASUSHI , OISHI SEITARO
IPC分类号： B23K15/00 , H01L21/302 , H01L21/3065 , H01L21/68 , H01L21/683
摘要： PURPOSE: To prevent the substrate cooling effect of a gas from declining by controlling the gap between a substrate and substrate holding stage within a fixed range even when the size of the substrate increases. CONSTITUTION: The surface of the substrate mounting section 34 of a substrate holding stage 28 is curved to a convex surface along the center line of the section 34 in the length direction so that the gap 50 between a substrate 26 and the mounting section 34 can be controlled within the range of 0-500μm when a gas is introduced to a gas passage 36 under a pressure of

59. 发明专利

JPH08134646A ION BEAM PROCESSING DEVICE 失效
公开(公告)号：JPH08134646A
公开(公告)日：1996-05-28
申请号：JP27362894
申请日：1994-11-08
申请人： HITACHI LTD
发明人： ONUKI HISAO , OISHI SEITARO
IPC分类号： C23C14/56
摘要： PURPOSE: To provide an ion beam processing device capable of irradiating respective samples with ion beams with a simple structure. CONSTITUTION: An ion beam generator 1, plural holding mechanisms 11 which attachably and detachably holds the respective plural samples to be irradiated with the ion beams, a treating chamber 4 in which processing by the ion beams is executed, a prepn. chamber 5 in which the samples are once stored, a transporting device 6 which transports the samples and plural holding mechanisms 11 are respectively subjected to first rotational driving to rotate the holding mechanisms 11 in such a manner that the samples rotate in the holding positions where the samples are held. Simultaneously, the device is provided with a rotational driving mechanism 3 which executes second rotational driving to rotate the holding mechanisms 11 so as to move the revolving axis of rotation moves on the predetermined circumference and a fine adjusting mechanism 23 which rotates the holding mechanisms 11 in such a manner that the samples rotate in the holding positions described above at the time when the rotational driving mechanism 3 does not execute the first rotational driving and the second rotational driving.

60. 发明专利

JPH07148582A ION BEAM PROCESSING DEVICE 失效
公开(公告)号：JPH07148582A
公开(公告)日：1995-06-13
申请号：JP29950793
申请日：1993-11-30
申请人： HITACHI LTD
发明人： ONUKI HISAO , OISHI SEITARO
IPC分类号： B23K15/00 , B23K15/06
摘要： PURPOSE:To reduce the cost per unit area of a clean room by arranging a storage vacuum vessel in a direction perpendicular to an ion source device and a processing treatment vacuum vessel. CONSTITUTION:Ions are generated in the ion source device 3. The processing treatment vacuum vessel 2a is connected to the device and a sample held therein is subjected to a processing treatment by the ions. The storage vacuum vessel 1a is connected to the processing treatment vacuum vessel 2a and the sample having subjected to the processing treatment or the sample to be subjected to the processing treatment an stored in the storage vacuum vessel 1a. The ion source device 3 and the processing treatment vacuum vessel 2a are, thereupon, connected linearly. The storage vacuum vessel 1a is so arranged as to exist in the direction perpendicular to the ion source device 3 and the processing treatment vacuum vessel 2a. As a result, the processing productivity is improved.

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式