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    • 51. 发明专利
    • SEMICONDUCTOR DEVICE
    • JPH0290555A
    • 1990-03-30
    • JP24113588
    • 1988-09-28
    • HITACHI LTDHITACHI VLSI ENG
    • MATSUGAMI SHOJIOTSUKA KANJIOKINAGA TAKAYUKIOGUMA HIROSHI
    • H01L23/36
    • PURPOSE:To dissipate efficiently heat generated from chips and to reduce the heat resistance of a package by a method wherein a cap is made to cover on a recessed part, in which the chips are sealed, on a pin grid array substrate and at the same time, a heat sink is connected to the outside of the cap and a gel is filled in the recessed part. CONSTITUTION:The interior of a recessed part 3 of a pin grid array substrate 1 is sealed with a cap 4 to cover the upper surface of the substrate 1. A heat sink 6 provided with heat dissipation fins 6a is bonded on the upper surface of the cap 4 using a bonding agent 6 for sealing use. A gel 13 having a high heat resistance and a high heat conductivity in combination is filled in a remaining region in the recessed part 3, in which a silicon wiring board 7 and chips 8 are sealed. Heat generated from the chips 8 is transferred to the sink 6 via CCB bumps 9, the board 7 and the cap 4, then, is dissipated from the surfaces of the fins 6a to the exterior. Moreover, the heat is transferred to the substrate 1 and input/output pins 2 via the gel 13. That is, as the ways of escape for the heat generated from the chips 8 are formed on both surfaces of the substrate 1, the heat dissipation efficiency of the chips is improved and the heat resistance of a package is reduced.
    • 52. 发明专利
    • SEALING JIG
    • JPH0287556A
    • 1990-03-28
    • JP23876488
    • 1988-09-26
    • HITACHI LTDHITACHI VLSI ENG
    • OZAKI HIROSHIOKINAGA TAKAYUKISHIRAI MASAYUKIOTSUKA KANJIAKASAKI HIROSHI
    • H01L23/02
    • PURPOSE:To prevent the generation of blowholes by a method wherein a sealing jig is formed into a structure, wherein the constituent member of part of its main body is deformed due to its characteristics by heating, and is constituted in such a way that a pressing force is applied to a product pinched between pressing parts at a sealing temperature and the pressing force is released at a temperature lower than the sealing temperature. CONSTITUTION:If a sealing substrate 18 is inserted in a heating furnace, gas G is generated from a resin layer 8 adhered on the surface of a semiconductor pellet 7 on the condition of a comparatively low temperature of 100 deg.C or lower at the beginning of the insertion, but this gas is exhausted to the exterior from the contact part between a frame member 5 and a cap 12. If a heating is further increased and the heating temperature reaches the vicinity of a sealing temperature, a pressing force is applied between pressing pawls 15a and 15b due to a difference between the expansion coefficients of a clip main body 14 and a receiving member 16 and the member 5 and the cap 12 are brought in a closely adhered state. At this time, as most of the gas G is already exhausted to the exterior, the internal pressure in a cavity 4 is not increased, blowholes are never generated in a brazing metal 6, the member 5 and the cap 12 are closely adhered to each other and the hermetic seal of the cavity 4 is attained.
    • 55. 发明专利
    • SEMICONDUCTOR DEVICE
    • JPH01135056A
    • 1989-05-26
    • JP29212087
    • 1987-11-20
    • HITACHI LTDHITACHI VLSI ENG
    • SHIRAI MASAYUKIUCHIUMI YASUYUKIOTSUKA KANJIOKINAGA TAKAYUKIMATSUGAMI SHOJI
    • H01L23/14H01L23/12H01L23/50
    • PURPOSE:To make it possible to readily correspond to the increase of input/output pins by composing a semiconductor device with a plurality of input/output pins which are detained at the rear of a wiring board without being exposed on the front side whereon a semiconductor integrated circuit element is mounted. CONSTITUTION:A through hole 5 of a large diameter which is formed in a secondary plate body 1b and one end of input/output pin is detained therein does not open to the upper surface of a primary plate body 1a whereon wiring structure 2 is formed. Therefore, the edge of an input/output pin 6 is not exposed on the upper surface of a primary plate body 1a, either. For instance, even if the number of input/output electrodes increases due to high integration of a semiconductor circuit device, and consequently the density of a plurality of wiring structures 2 formed on the upper surface of the primary plate body 1a is increased, it is not restricted to take around a plurality of wiring structures 2 in the upper surface of a primary plate body 1a by the bulge section of the input/output pin 6 exposed in the upper surface of the primary plate body 1a. In this way, it is possible to readily correspond to the increase of input/output electrodes at the semiconductor integrated circuit device 3, that is, increase of input/output pins 6.
    • 60. 发明专利
    • SEMICONDUCTOR DEVICE
    • JPS6379350A
    • 1988-04-09
    • JP22357586
    • 1986-09-24
    • HITACHI VLSI ENGHITACHI LTD
    • MATSUGAMI SHOJIOTSUKA KANJIOKINAGA TAKAYUKISHIRAI MASAYUKITATE HIROSHI
    • H01L23/12
    • PURPOSE:To decrease the warping of the base of a package, to promote the reduction in capacitance between wires and to shield external noises by grounding layers, by providing the grounding layer for an inner interconnection layer in addition to a grounding layer for a surface interconnection layer. CONSTITUTION:A surface interconnection layer 2 is provided on the surface of a base 1. A GND layer 3 is provided in the inside of the base 1. A plurality of lead pins 4 are extended in the vertical direction from the bottom surface of the base 1. An inner interconnection layer 5, by which the surface interconnection layer 2 and the lead pins 4 are connected, is formed in the base 1. The inner interconnection layer 5 comprises an interconnection part 5a, which is extended downward from the surface interconnection layer 2, an interconnection layer part 5b, which is provided in parallel with the GND layer 3, end an interconnection part 5c for connection. A GND layer 6 for the inner interconnection layer 5 is provided in parallel with the GND layer 3 at the bottom surface side of the base 1. The GND layers 3 and 6 are provided at upper and lower symmetrical positions with respect to a central line 7 crossing the base 1 so that balance is provided.