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51. 发明授权

US06627532B1 Method of decreasing the K value in SiOC layer deposited by chemical vapor deposition 有权
标题翻译：通过化学气相沉积沉积的SiOC层中降低K值的方法
公开(公告)号：US06627532B1
公开(公告)日：2003-09-30
申请号：US09679843
申请日：2000-10-05
申请人： Frederic Gaillard , Li-Qun Xia , Tian-Hoe Lim , Ellie Yieh , Wai-Fan Yau , Shin-Puu Jeng , Kuowei Liu , Yung-Cheng Lu
发明人： Frederic Gaillard , Li-Qun Xia , Tian-Hoe Lim , Ellie Yieh , Wai-Fan Yau , Shin-Puu Jeng , Kuowei Liu , Yung-Cheng Lu
IPC分类号： H01L214763
CPC分类号： H01L21/76834 , C23C16/401 , H01L21/02126 , H01L21/02208 , H01L21/02211 , H01L21/02271 , H01L21/02274 , H01L21/0228 , H01L21/02304 , H01L21/02362 , H01L21/314 , H01L21/31612 , H01L21/31633 , H01L21/76801 , H01L21/7681 , H01L21/76814 , H01L21/76828
摘要： A method for processing a substrate comprising depositing a dielectric layer comprising silicon, oxygen, and carbon on the substrate by chemical vapor deposition, wherein the dielectric layer has a carbon content of at least 1% by atomic weight and a dielectric constant of less than about 3, and depositing a silicon and carbon containing layer on the dielectric layer. The dielectric constant of a dielectric layer deposited by reaction of an organosilicon compound having three or more methyl groups is significantly reduced by further depositing an amorphous hydrogenated silicon carbide layer by reaction of an alkylsilane in a plasma of a relatively inert gas.
摘要翻译：一种用于处理衬底的方法，包括通过化学气相沉积在衬底上沉积包括硅，氧和碳的电介质层，其中介电层具有至少1％原子量的碳含量和小于约并且在电介质层上沉积含硅和碳的层。通过使烷基硅烷在相对惰性气体的等离子体中反应而进一步沉积非晶质氢化碳化硅层，沉积了具有三个或更多个甲基的有机硅化合物沉积的电介质层的介电常数显着降低。

52. 发明授权

US06503843B1 Multistep chamber cleaning and film deposition process using a remote plasma that also enhances film gap fill 失效
标题翻译：使用远程等离子体进行多步骤清洗和膜沉积工艺，还可增强膜间隙填充
公开(公告)号：US06503843B1
公开(公告)日：2003-01-07
申请号：US09400338
申请日：1999-09-21
申请人： Li-Qun Xia , Ellie Yieh
发明人： Li-Qun Xia , Ellie Yieh
IPC分类号： H01L21302
CPC分类号： H01L21/31625 , C23C16/401 , C23C16/4405 , H01L21/02129 , H01L21/02131 , H01L21/02164 , H01L21/02274 , H01L21/0228 , H01L21/31051 , H01L21/314 , H01L21/67069 , H01L21/67253 , H01L21/67276
摘要： An improved method of forming a dielectric layer over a substrate disposed in a substrate processing chamber and cleaning deposition material off the chamber's interior wall and surfaces. The method breaks an in-situ chamber cleaning operation that is commonly performed after film deposition into two separate steps. The first step is done after a portion of the dielectric layer is deposited over the substrate. The second step then completes the in-situ chamber cleaning operation and is performed after deposition of the dielectric layer is completed. Both the first and second steps of the cleaning operation flow remotely dissociated fluorine atoms into the chamber to etch away material deposited on the chamber walls. The first step of the chamber cleaning process has the added benefit of incorporating small amounts of fluorine into the dielectric layer being deposited and isotropically etching the layer to improve the layer's gap-fill capability.
摘要翻译：一种在设置在基板处理室中的基板上形成电介质层并从室的内壁和表面清除沉积材料的改进方法。该方法打破了在膜沉积后通常在两个单独的步骤中进行的原位室清洁操作。第一步是在将介电层的一部分沉积在衬底上之后进行。然后第二步完成原位室清洁操作，并且在电介质层沉积完成之后进行。清洁操作流程的第一和第二步骤都将氟原子远离地分离到室中以蚀刻掉沉积在室壁上的材料。室清洁过程的第一步骤具有将少量氟加入到沉积的介电层中并且各向同性地蚀刻该层以提高该层的间隙填充能力的附加益处。

53. 发明授权

US06486082B1 CVD plasma assisted lower dielectric constant sicoh film 失效
标题翻译： CVD等离子体辅助低介电常数薄膜
公开(公告)号：US06486082B1
公开(公告)日：2002-11-26
申请号：US09885985
申请日：2001-06-18
申请人： Seon-Mee Cho , Peter Wai-Man Lee , Chi-I Lang , Dian Sugiarto , Chen-An Chen , Li-Qun Xia , Shankar Venkataraman , Ellie Yieh
发明人： Seon-Mee Cho , Peter Wai-Man Lee , Chi-I Lang , Dian Sugiarto , Chen-An Chen , Li-Qun Xia , Shankar Venkataraman , Ellie Yieh
IPC分类号： H07L21477
CPC分类号： H01L21/02126 , C23C16/30 , H01L21/02211 , H01L21/02216 , H01L21/02274 , H01L21/02304 , H01L21/02362 , H01L21/31633 , Y10S438/931 , Y10T428/31909
摘要： A low dielectric constant film having silicon-carbon bonds and dielectric constant of about 3.0 or less, preferably about 2.5 or less, is provided. The low dielectric constant film is deposited by reacting a cyclic organosilicon compound and an aliphatic organosilicon compound with an oxidizing gas while applying RF power. The carbon content of the deposited film is between about 10 and about 30 atomic percent excluding hydrogen atoms, and is preferably between about 10 and about 20 atomic percent excluding hydrogen atoms.
摘要翻译：提供了具有约3.0或更小，优选约2.5或更小的硅 - 碳键和介电常数的低介电常数膜。通过使环状有机硅化合物和脂族有机硅化合物与氧化气体反应同时施加RF功率来沉积低介电常数膜。沉积膜的碳含量除氢原子以外约为10至约30原子百分比，优选除氢原子之外约10至约20原子％。

54. 发明授权

US06486061B1 Post-deposition treatment to enhance properties of Si-O-C low K films 失效
标题翻译：后沉积处理以提高Si-O-C低K膜的性能
公开(公告)号：US06486061B1
公开(公告)日：2002-11-26
申请号：US09632669
申请日：2000-08-07
申请人： Li-Qun Xia , Frederic Gaillard , Ellie Yieh , Tian H. Lim
发明人： Li-Qun Xia , Frederic Gaillard , Ellie Yieh , Tian H. Lim
IPC分类号： H01L2144
CPC分类号： H01L21/02126 , C23C16/0218 , C23C16/401 , C23C16/56 , H01L21/02071 , H01L21/02203 , H01L21/02211 , H01L21/02271 , H01L21/02274 , H01L21/02312 , H01L21/02337 , H01L21/0234 , H01L21/02362 , H01L21/3105 , H01L21/3146 , H01L21/31604 , H01L21/31612 , H01L21/31633 , H01L21/76807 , H01L21/76826 , H01L21/76837 , Y10S438/931
摘要： A method for providing a dielectric film having enhanced adhesion and stability. The method includes a post deposition treatment that densifies the film in a reducing atmosphere to enhance stability if the film is to be cured ex-situ. The densification generally takes place in a reducing environment while heating the substrate. The densification treatment is particularly suitable for silicon-oxygen-carbon low dielectric constant films that have been deposited at low temperature.
摘要翻译：一种用于提供具有增强的粘合性和稳定性的电介质膜的方法。该方法包括在还原气氛中使膜致密化的后沉积处理，以提高如果该膜不原位固化的稳定性。致密化通常在还原环境中进行，同时加热基底。致密化处理特别适用于在低温下沉积的硅 - 氧 - 碳低介电常数膜。

55. 发明授权

US06472333B2 Silicon carbide cap layers for low dielectric constant silicon oxide layers 失效
标题翻译：用于低介电常数氧化硅层的碳化硅盖层
公开(公告)号：US06472333B2
公开(公告)日：2002-10-29
申请号：US09820439
申请日：2001-03-28
申请人： Li-Qun Xia , Paul Fisher , Margaret Lynn Gotuaco , Frederic Gaillard , Ellie Yieh
发明人： Li-Qun Xia , Paul Fisher , Margaret Lynn Gotuaco , Frederic Gaillard , Ellie Yieh
IPC分类号： H01L2131
CPC分类号： H01L21/02126 , H01L21/02167 , H01L21/02271 , H01L21/02362 , H01L21/31633 , H01L21/76813 , H01L21/76828 , H01L21/76829
摘要： A method of forming a low dielectric constant silicate material for use in integrated circuit fabrication processes is disclosed. The low dielectric constant silicate material is formed by reacting by reacting a gas mixture comprising an organosilane compound, an oxygen source, and an inert gas. Thereafter, a silicon carbide cap layer is formed on the silicate material by reacting a gas mixture comprising a silicon source and a carbon source. The silicon carbide cap layer protects the underlying organosilicate layer from cracking and peeling when it is hardened during a subsequent annealing step.
摘要翻译：公开了一种形成用于集成电路制造工艺的低介电常数硅酸盐材料的方法。低介电常数硅酸盐材料是通过使包含有机硅烷化合物，氧源和惰性气体的气体混合物反应而形成的。此后，通过使包含硅源和碳源的气体混合物反应，在硅酸盐材料上形成碳化硅盖层。当在随后的退火步骤中硬化时，碳化硅盖层保护下面的有机硅酸盐层不被开裂和剥离。

56. 发明授权

US06465372B1 Surface treatment of C-doped SiO2 film to enhance film stability during O2 ashing 有权
标题翻译：表面处理C掺杂SiO2薄膜，以提高O2在灰化过程中的稳定性
公开(公告)号：US06465372B1
公开(公告)日：2002-10-15
申请号：US09633495
申请日：2000-08-07
申请人： Li-Qun Xia , Tian-Hoe Lim , Frederic Gaillard , Ellie Yieh
发明人： Li-Qun Xia , Tian-Hoe Lim , Frederic Gaillard , Ellie Yieh
IPC分类号： H01L2131
CPC分类号： H01L21/02126 , C23C16/0218 , C23C16/401 , C23C16/56 , H01L21/022 , H01L21/02203 , H01L21/02211 , H01L21/02271 , H01L21/02274 , H01L21/02312 , H01L21/02337 , H01L21/0234 , H01L21/02362 , H01L21/3105 , H01L21/31612 , H01L21/31633
摘要： A method for forming an insulation layer over a substrate. The method forms a carbon-doped silicon oxide layer by thermal chemical vapor deposition using an organosilane. The carbon-doped silicon oxide layer is subsequently cured and densified. In one embodiment, the cured film is densified in a nitrogen-containing plasma. The method is particularly suitable for deposition of low dielectric constant films, i.e., where k is less than or equal to 3.0. Low-k, carbon-doped silicon oxide methylsilane or di-, tri-, tetra-, or phenylmethylsilane. and ozone. The above method can be carried out in a substrate processing system having a process chamber; a substrate holder, a heater, a gas delivery system, and a power supply, all of which are coupled to a controller. The controller contains a memory having a computer-readable medium with a program embodied for directing operation of the system in accordance with above method.
摘要翻译：一种在衬底上形成绝缘层的方法。该方法通过使用有机硅烷的热化学气相沉积形成碳掺杂氧化硅层。碳掺杂氧化硅层随后被固化和致密化。在一个实施方案中，固化膜在含氮等离子体中致密化。该方法特别适用于沉积低介电常数膜，即其中k小于或等于3.0。低k，碳掺杂的氧化硅甲基硅烷或二，三，四或苯基甲基硅烷。和臭氧。上述方法可以在具有处理室的基板处理系统中进行; 衬底保持器，加热器，气体输送系统和电源，所有这些都耦合到控制器。控制器包含具有计算机可读介质的存储器，该计算机可读介质具有根据上述方法指导系统操作的程序。

57. 发明授权

US06352591B1 Methods and apparatus for shallow trench isolation 有权
标题翻译：浅沟槽隔离的方法和装置
公开(公告)号：US06352591B1
公开(公告)日：2002-03-05
申请号：US09613934
申请日：2000-07-11
申请人： Ellie Yieh , Li-Qun Xia , Srinivas Nemani
发明人： Ellie Yieh , Li-Qun Xia , Srinivas Nemani
IPC分类号： C23C1652
CPC分类号： C23C16/45565 , C23C16/0245 , C23C16/402 , C23C16/4405 , C23C16/4411 , C23C16/4412 , C23C16/45561 , C23C16/4586 , C23C16/46 , C23C16/52 , C23C16/54 , H01L21/02129 , H01L21/02164 , H01L21/02271 , H01L21/02274 , H01L21/02301 , H01L21/02362 , H01L21/2255 , H01L21/31612 , H01L21/31625
摘要： The present invention provides systems, methods and apparatus for high temperature (at least about 500-800° C.) processing of semiconductor wafers. The systems, methods and apparatus of the present invention allow multiple process steps to be performed in situ in the same chamber to reduce total processing time and to ensure high quality processing for high aspect ratio devices. Performing multiple process steps in the same chamber also increases the control of the process parameters and reduces device damage. In particular, the present invention can provide high temperature deposition, heating and efficient cleaning for forming dielectric films having thickness uniformity, good gap fill capability, high density, low moisture, and other desired characteristics.
摘要翻译：本发明提供用于半导体晶片的高温（至少约500-800℃）处理的系统，方法和装置。本发明的系统，方法和装置允许多个工艺步骤在相同的腔室中原位进行，以减少总处理时间，并确保对高宽比装置的高质量处理。在同一个室内执行多个工艺步骤也可以增加工艺参数的控制并减少设备损坏。特别地，本发明可以提供用于形成具有厚度均匀性，良好间隙填充能力，高密度，低湿度和其它所需特性的介电膜的高温沉积，加热和有效清洁。

58. 发明授权

US06347636B1 Methods and apparatus for gettering fluorine from chamber material surfaces 有权
标题翻译：从室材料表面吸除氟的方法和设备
公开(公告)号：US06347636B1
公开(公告)日：2002-02-19
申请号：US09340602
申请日：1999-06-25
申请人： Li-Qun Xia , Visweswaren Sivaramakrishnan , Srinivas Nemani , Ellie Yieh , Gary Fong
发明人： Li-Qun Xia , Visweswaren Sivaramakrishnan , Srinivas Nemani , Ellie Yieh , Gary Fong
IPC分类号： B08B600
CPC分类号： B08B7/0035 , C23C16/4405 , H01L21/67017 , Y10S438/905
摘要： The present invention provides systems, methods and apparatus for high temperature (at least about 500-800° C.) processing of semiconductor wafers. The systems, methods and apparatus of the present invention allow multiple process steps to be performed in situ in the same chamber to reduce total processing time and to ensure high quality processing for high aspect ratio devices. Performing multiple process steps in the same chamber also increases the control of the process parameters and reduces device damage. In particular, the present invention can provide high temperature deposition, heating and efficient cleaning for forming dielectric films having thickness uniformity, good gap fill capability, high density, low moisture, and other desired characteristics.
摘要翻译：本发明提供用于半导体晶片的高温（至少约500-800℃）处理的系统，方法和装置。本发明的系统，方法和装置允许多个工艺步骤在相同的腔室中原位进行，以减少总处理时间，并确保对高宽比装置的高质量处理。在同一个室内执行多个工艺步骤也可以增加工艺参数的控制并减少设备损坏。特别地，本发明可以提供用于形成具有厚度均匀性，良好间隙填充能力，高密度，低湿度和其它所需特性的介电膜的高温沉积，加热和有效清洁。

59. 发明授权

US06277200B1 Dielectric film deposition employing a bistertiarybutylaminesilane precursor 有权
公开(公告)号：US06277200B1
公开(公告)日：2001-08-21
申请号：US09728718
申请日：2000-11-30
申请人： Li-Qun Xia , Ellie Yieh
发明人： Li-Qun Xia , Ellie Yieh
IPC分类号： C23C1600
摘要： A method and an apparatus for increasing a deposition rate of dielectric films deposited on a substrate for a given temperature while providing the same with good step coverage and gap-fill properties. This is achieved by employing bistertiarybutylaminesilane as a silicon source to react with an oxidizing agent to form a dielectric film on a substrate that includes silicon.

60. 发明授权

US06177344B1 BPSG reflow method to reduce thermal budget for next generation device including heating in a steam ambient 有权
标题翻译： BPSG回流方法可降低下一代设备的热预算，包括在蒸汽环境中加热
公开(公告)号：US06177344B1
公开(公告)日：2001-01-23
申请号：US09199911
申请日：1998-11-25
申请人： Li-Qun Xia , Richard A. Conti , Maria Galiano , Ellie Yieh
发明人： Li-Qun Xia , Richard A. Conti , Maria Galiano , Ellie Yieh
IPC分类号： H01L214763
CPC分类号： H01L21/31051 , H01L21/3105 , H01L21/31625
摘要： A multistep method for planarizing a silicon oxide insulating layer such as a deposited borophosphosilicate glass (BPSG) layer. The method includes several different planarization stages. During an initial, pre-planarization stage, a substrate having a BPSG layer deposited over it is loaded into a substrate processing chamber. Then, during a first planarization stage after the pre-planarization stage, oxygen and hydrogen are flowed into the substrate processing chamber to form a steam ambient in said chamber and the substrate is heated in the steam ambient from a first temperature to a second temperature. The first temperature is below a reflow temperature of the BPSG layer and the second temperature is sufficient to reflow the layer. After the substrate is heated to the second temperature during a second planarization stage, the temperature of the substrate and the conditions within the substrate processing chamber are maintained at conditions sufficient to reflow the BPSG layer in the steam ambient. In a more preferred embodiment, the multistep planarization method also includes a third planarization stage, after the second stage. In the third planarization stage, the flow of hydrogen is stopped while the flow of oxygen is maintained, thereby forming an oxygen ambient in the substrate processing chamber. The substrate temperature is maintained in the oxygen ambient at a temperature above the reflow temperature of the BPSG layer. It is believed that this additional step minimizes the amount of moisture incorporated into the reflowed BPSG layer.
摘要翻译：一种用于平坦化氧化硅绝缘层例如沉积的硼磷硅酸盐玻璃（BPSG）层的多步法。该方法包括几个不同的平坦化阶段。在初始预平坦化阶段期间，在其上沉积有BPSG层的衬底被加载到衬底处理室中。然后，在预平坦化阶段之后的第一平坦化阶段期间，氧气和氢气流入基板处理室以在所述室中形成蒸汽环境，并且基板在蒸汽环境中从第一温度加热到第二温度。第一温度低于BPSG层的回流温度，第二温度足以使该层回流。在第二平坦化阶段将衬底加热到第二温度之后，衬底的温度和衬底处理室内的条件保持在足以在蒸汽环境中回流BPSG层的条件。在更优选的实施例中，多级平面化方法还包括在第二级之后的第三平坦化级。在第三平坦化阶段，在保持氧气流的同时停止氢的流动，从而在衬底处理室中形成氧环境。在超过BPSG层的回流温度的温度下，将基板温度保持在氧环境中。据信这个附加步骤使并入回流的BPSG层中的水分量最小化。

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