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51. 发明授权

US07582565B2 Method and apparatus for semiconductor wafer planarization 有权
标题翻译：用于半导体晶片平面化的方法和装置
公开(公告)号：US07582565B2
公开(公告)日：2009-09-01
申请号：US12054311
申请日：2008-03-24
申请人： Fred C. Redeker , John Boyd , Yezdi Dordi , William Thie , Bob Maraschin
发明人： Fred C. Redeker , John Boyd , Yezdi Dordi , William Thie , Bob Maraschin
IPC分类号： H01L21/461 , H01L21/302 , H01L21/769 , B05C3/02
CPC分类号： H01L21/7684 , C23C18/06 , C23C18/1216 , C23C18/1225 , C23C18/1291 , C23C18/14 , H01L21/288
摘要： Broadly speaking, the present invention provides a method and an apparatus for planarizing a semiconductor wafer (“wafer”). More specifically, the present invention provides for depositing a planarizing layer over the wafer, wherein the planarizing layer serves to fill recessed areas present on a surface of the wafer. A planar member is positioned over and proximate to a top surface of the wafer. Positioning of the planar member serves to entrap electroless plating solution between the planar member and the wafer surface. Radiant energy is applied to the wafer surface to cause a temperature increase at an interface between the wafer surface and the electroless plating solution. The temperature increase in turn causes plating reactions to occur at the wafer surface. Material deposited through the plating reactions forms a planarizing layer that conforms to a planarity of the planar member.
摘要翻译：广义而言，本发明提供了一种用于平面化半导体晶片（“晶片”）的方法和装置。更具体地，本发明提供了在晶片上沉积平坦化层，其中平坦化层用于填充存在于晶片表面上的凹陷区域。平面构件定位在晶片的顶表面上方并靠近晶片的顶表面。平面构件的定位用于在平面构件和晶片表面之间夹带化学镀溶液。辐射能量被施加到晶片表面以在晶片表面和化学镀溶液之间的界面处引起温度升高。温度升高又会导致电镀反应发生在晶片表面。通过电镀反应沉积的材料形成符合平面构件平坦度的平坦化层。

52. 发明申请

US20080166885A1 Method and Apparatus for Semiconductor Wafer Planarization 有权
标题翻译：半导体晶圆平面化方法与装置
公开(公告)号：US20080166885A1
公开(公告)日：2008-07-10
申请号：US12054311
申请日：2008-03-24
申请人： Fred C. Redeker , John Boyd , Yezdi Dordi , William Thie , Bob Maraschin
发明人： Fred C. Redeker , John Boyd , Yezdi Dordi , William Thie , Bob Maraschin
IPC分类号： H01L21/31
CPC分类号： H01L21/7684 , C23C18/06 , C23C18/1216 , C23C18/1225 , C23C18/1291 , C23C18/14 , H01L21/288
摘要： Broadly speaking, the present invention provides a method and an apparatus for planarizing a semiconductor wafer (“wafer”). More specifically, the present invention provides for depositing a planarizing layer over the wafer, wherein the planarizing layer serves to fill recessed areas present on a surface of the wafer. A planar member is positioned over and proximate to a top surface of the wafer. Positioning of the planar member serves to entrap electroless plating solution between the planar member and the wafer surface. Radiant energy is applied to the wafer surface to cause a temperature increase at an interface between the wafer surface and the electroless plating solution. The temperature increase in turn causes plating reactions to occur at the wafer surface. Material deposited through the plating reactions forms a planarizing layer that conforms to a planarity of the planar member.
摘要翻译：广义而言，本发明提供了一种用于平面化半导体晶片（“晶片”）的方法和装置。更具体地，本发明提供了在晶片上沉积平坦化层，其中平坦化层用于填充存在于晶片表面上的凹陷区域。平面构件定位在晶片的顶表面上方并靠近晶片的顶表面。平面构件的定位用于在平面构件和晶片表面之间夹带化学镀溶液。辐射能量被施加到晶片表面以在晶片表面和化学镀溶液之间的界面处引起温度升高。温度升高又会导致电镀反应发生在晶片表面。通过电镀反应沉积的材料形成符合平面构件平坦度的平坦化层。

53. 发明申请

US20060260932A1 Apparatus and method for depositing and planarizing thin films of semiconductor wafers 失效
标题翻译：用于沉积和平坦化半导体晶片的薄膜的装置和方法
公开(公告)号：US20060260932A1
公开(公告)日：2006-11-23
申请号：US11494997
申请日：2006-07-28
申请人： Mike Ravkin , John Boyd , Yezdi Dordi , Fred Redeker , John deLarios
发明人： Mike Ravkin , John Boyd , Yezdi Dordi , Fred Redeker , John deLarios
IPC分类号： C25D17/00
CPC分类号： C25D17/10 , C25D5/026 , C25D5/22 , C25D7/123 , C25D17/001 , H01L21/2885 , H01L21/67028 , H01L21/67034 , H01L21/67051
摘要： An electroplating apparatus for depositing a metallic layer on a surface of a wafer is provided. In one example, a proximity head capable of being electrically charged as an anode is placed in close proximity to the surface of the wafer. A plating fluid is provided between the wafer and the proximity head to create localized metallic plating.
摘要翻译：提供了一种用于在晶片的表面上沉积金属层的电镀设备。在一个示例中，能够被充电作为阳极的接近头放置在紧邻晶片表面的位置。在晶片和邻近头之间提供电镀液以产生局部金属电镀。

54. 发明申请

US20050284748A1 Electroplating head and method for operating the same 有权
标题翻译：电镀头及其操作方法
公开(公告)号：US20050284748A1
公开(公告)日：2005-12-29
申请号：US10879396
申请日：2004-06-28
申请人： Yezdi Dordi , Bob Maraschin , John Boyd , Fred Redeker
发明人： Yezdi Dordi , Bob Maraschin , John Boyd , Fred Redeker
IPC分类号： C25D17/00 , C25D17/14
CPC分类号： C25D5/026 , C25D5/02 , C25D5/06 , C25D17/14
摘要： An electroplating head including a chamber having a fluid entrance and a fluid exit is provided. The chamber is configured to contain a flow of electroplating solution from the fluid entrance to the fluid exit. The electroplating head also includes an anode disposed within the chamber. The anode is configured to be electrically connected to a power supply. The electroplating head further includes a porous resistive material disposed at the fluid exit such that the flow of electroplating solution is required to traverse through the porous resistive material.
摘要翻译：提供一种包括具有流体入口和流体出口的室的电镀头。腔室被配置成包含从流体入口到流体出口的电镀溶液流。电镀头还包括设置在室内的阳极。阳极被配置为电连接到电源。电镀头还包括设置在流体出口处的多孔电阻材料，使得电镀溶液的流动需要穿过多孔电阻材料。

55. 发明授权

US08048283B2 Method and apparatus for plating semiconductor wafers 有权
标题翻译：用于电镀半导体晶片的方法和装置
公开(公告)号：US08048283B2
公开(公告)日：2011-11-01
申请号：US12724379
申请日：2010-03-15
申请人： Yezdi Dordi , Bob Maraschin , John Boyd , Fred C. Redeker , Carl Woods
发明人： Yezdi Dordi , Bob Maraschin , John Boyd , Fred C. Redeker , Carl Woods
IPC分类号： C25D5/02
CPC分类号： C25D17/14 , C25D5/06 , C25D7/123 , C25D17/001 , C25D17/12 , H01L21/2885
摘要： First and second electrodes are disposed at first and second locations, respectively, proximate to a periphery of a wafer support, wherein the first and second location are substantially opposed to each other relative to the wafer support. Each of the first and second electrodes can be moved to electrically connect with and disconnect from a wafer held by the wafer support. An anode is disposed over and proximate to the wafer such that a meniscus of electroplating solution is maintained between the anode and the wafer. As the anode moves over the wafer from the first location to the second location, an electric current is applied through the meniscus between the anode and the wafer. Also, as the anode is moved over the wafer, the first and second electrodes are controlled to connect with the wafer while ensuring that the anode does not pass over an electrode that is connected.
摘要翻译：第一和第二电极分别设置在靠近晶片支撑件的周边的第一和第二位置处，其中第一和第二位置相对于晶片支撑件彼此基本相对。可以使第一和第二电极中的每一个移动以与由晶片支撑件保持的晶片电连接和断开。阳极设置在晶片上方并且靠近晶片，使得电镀溶液的弯液面保持在阳极和晶片之间。当阳极从晶片从第一位置移动到第二位置时，通过阳极和晶片之间的弯液面施加电流。此外，当阳极移动到晶片上时，第一和第二电极被控制以与晶片连接，同时确保阳极不通过连接的电极。

56. 发明授权

US07884017B2 Thermal methods for cleaning post-CMP wafers 有权
标题翻译：用于清洁CMP后晶圆的热处理方法
公开(公告)号：US07884017B2
公开(公告)日：2011-02-08
申请号：US12699518
申请日：2010-02-03
申请人： Zhonghui Alex Wang , Tiruchirapalli Arunagiri , Fritz C. Redeker , Yezdi Dordi , John Boyd , Mikhail Korolik , Arthur M. Howald , William Thie , Praveen Nalla
发明人： Zhonghui Alex Wang , Tiruchirapalli Arunagiri , Fritz C. Redeker , Yezdi Dordi , John Boyd , Mikhail Korolik , Arthur M. Howald , William Thie , Praveen Nalla
IPC分类号： H01L21/44 , H01L21/31 , H01L21/469 , H01L21/24 , H01L21/40
CPC分类号： H01L21/02074
摘要： Methods for cleaning semiconductor wafers following chemical mechanical polishing are provided. An exemplary method exposes a wafer to a thermal treatment in an oxidizing environment followed by a thermal treatment in a reducing environment. The thermal treatment in the oxidizing environment both removes residues and oxidizes exposed copper surfaces to form a cupric oxide layer. The thermal treatment in the reducing environment then reduces the cupric oxide to elemental copper. This leaves the exposed copper clean and in condition for further processing, such as electroless plating.
摘要翻译：提供了化学机械抛光后的半导体晶片清洗方法。一种示例性方法将晶片暴露于氧化环境中的热处理，然后在还原环境中进行热处理。在氧化环境中的热处理既去除残留物，又氧化暴露的铜表面以形成氧化铜层。然后，在还原环境中的热处理将氧化铜还原为元素铜。这使得暴露的铜清洁并进行进一步处理，例如化学镀。

57. 发明授权

US07563348B2 Electroplating head and method for operating the same 有权
标题翻译：电镀头及其操作方法
公开(公告)号：US07563348B2
公开(公告)日：2009-07-21
申请号：US10879396
申请日：2004-06-28
申请人： Yezdi Dordi , Bob Maraschin , John Boyd , Fred C. Redeker
发明人： Yezdi Dordi , Bob Maraschin , John Boyd , Fred C. Redeker
IPC分类号： C25D17/00
CPC分类号： C25D5/026 , C25D5/02 , C25D5/06 , C25D17/14
摘要： An electroplating head including a chamber having a fluid entrance and a fluid exit is provided. The chamber is configured to contain a flow of electroplating solution from the fluid entrance to the fluid exit. The electroplating head also includes an anode disposed within the chamber. The anode is configured to be electrically connected to a power supply. The electroplating head further includes a porous resistive material disposed at the fluid exit such that the flow of electroplating solution is required to traverse through the porous resistive material.
摘要翻译：提供一种包括具有流体入口和流体出口的室的电镀头。腔室被配置成包含从流体入口到流体出口的电镀溶液流。电镀头还包括设置在室内的阳极。阳极被配置为电连接到电源。电镀头还包括设置在流体出口处的多孔电阻材料，使得电镀溶液的流动需要穿过多孔电阻材料。

58. 发明申请

US20080280456A1 Thermal methods for cleaning post-CMP wafers 有权
标题翻译：用于清洁CMP后晶圆的热处理方法
公开(公告)号：US20080280456A1
公开(公告)日：2008-11-13
申请号：US11801269
申请日：2007-05-08
申请人： Zhonghui Alex Wang , Tiruchirapalli Arunagiri , Fritz C. Redeker , Yezdi Dordi , John Boyd , Mikhail Korolik , Arthur M. Howald , William Thie , Praveen Nalla
发明人： Zhonghui Alex Wang , Tiruchirapalli Arunagiri , Fritz C. Redeker , Yezdi Dordi , John Boyd , Mikhail Korolik , Arthur M. Howald , William Thie , Praveen Nalla
IPC分类号： H01L21/00
CPC分类号： H01L21/02074
摘要： Methods for cleaning semiconductor wafers following chemical mechanical polishing are provided. An exemplary method exposes a wafer to a thermal treatment in an oxidizing environment followed by a thermal treatment in a reducing environment. The thermal treatment in the oxidizing environment both removes residues and oxidizes exposed copper surfaces to form a cupric oxide layer. The thermal treatment in the reducing environment then reduces the cupric oxide to elemental copper. This leaves the exposed copper clean and in condition for further processing, such as electroless plating.
摘要翻译：提供了化学机械抛光后的半导体晶片清洗方法。一种示例性方法将晶片暴露于氧化环境中的热处理，然后在还原环境中进行热处理。在氧化环境中的热处理既去除残留物，又氧化暴露的铜表面以形成氧化铜层。然后，在还原环境中的热处理将氧化铜还原为元素铜。这使得暴露的铜清洁并进行进一步处理，例如化学镀。

59. 发明申请

US20080152823A1 Self-limiting plating method 审中-公开
标题翻译：自限电镀法
公开(公告)号：US20080152823A1
公开(公告)日：2008-06-26
申请号：US11643404
申请日：2006-12-20
申请人： John Boyd , Yezdi Dordi , Tiruchirapalli Arunagiri , William Thie , Fritz C. Redeker , Praveen Nalla
发明人： John Boyd , Yezdi Dordi , Tiruchirapalli Arunagiri , William Thie , Fritz C. Redeker , Praveen Nalla
IPC分类号： B05D1/18
CPC分类号： C23C18/1689 , C23C18/161 , C23C18/1653 , C23C18/1658 , C23C18/1683 , C23C18/31 , H01L21/288 , H01L21/76877
摘要： A self-limiting electroless plating process is provided to plate thin films with improved uniformity. The process comprises dispensing an electroless plating solution onto a substrate to form a quiescent solution layer from which a conformal plated layer plates onto a surface of the substrate by a redox reaction. The redox reaction occurs at the surface of the substrate between a reducing agent ion and a plating ion and produces an oxidized ion. Because the solution is quiescent, a boundary layer forms within the solution layer adjacent to the surface. The boundary layer is characterized by a concentration gradient of the oxidized ion. Diffusion of the reducing agent ion through the boundary layer controls the redox reaction. The quiescent solution layer can be maintained until the reducing agent ion in the solution layer is substantially depleted.
摘要翻译：提供了一种自限制化学镀工艺，以平整薄膜，以均匀度提高。该方法包括将化学镀溶液分配到基底上以形成静电溶液层，通过氧化还原反应从其中将共形镀层从该平板镀在基底的表面上。氧化还原反应发生在还原剂离子和镀覆离子之间的衬底表面，并产生氧化离子。因为溶液是静止的，所以在与表面相邻的溶液层内形成边界层。边界层的特征在于氧化离子的浓度梯度。还原剂离子通过边界层的扩散控制氧化还原反应。可以维持静止溶液层，直到溶液层中的还原剂离子基本上被耗尽。

60. 发明申请

US20070292604A1 Processes and systems for engineering a copper surface for selective metal deposition 有权
标题翻译：用于工程铜表面的选择性金属沉积的工艺和系统
公开(公告)号：US20070292604A1
公开(公告)日：2007-12-20
申请号：US11513634
申请日：2006-08-30
申请人： Yezdi Dordi , John Boyd , Tiruchirapalli Arunagiri , Fritz C. Redeker , William Thie , Arthur M. Howald
发明人： Yezdi Dordi , John Boyd , Tiruchirapalli Arunagiri , Fritz C. Redeker , William Thie , Arthur M. Howald
IPC分类号： B05D3/00 , B05D5/12 , B05D1/18 , C04B41/00 , C23C14/00 , B05C13/02 , B29C71/04
CPC分类号： B05C13/02 , B05D3/002 , C23C18/1651 , C23C18/1851 , C23C18/1893 , H01L21/0206 , H01L21/02063 , H01L21/02068 , H01L21/02074 , H01L21/28518 , H01L21/288 , H01L21/32115 , H01L21/32135 , H01L21/32136 , H01L21/67161 , H01L21/67207 , H01L21/76814 , H01L21/7684 , H01L21/76843 , H01L21/76846 , H01L21/76849 , H01L21/76862
摘要： The embodiments fill the need to enhance electro-migration performance, provide lower metal resistivity, and improve metal-to-metal interfacial adhesion for copper interconnects by providing improved processes and systems that produce an improved metal-to-metal interface, more specifically copper-to-cobalt-alloy interface. An exemplary method of preparing a substrate surface of a substrate to selectively deposit a thin layer of a cobalt-alloy material on a copper surface of a copper interconnect of the substrate in an integrated system to improve electromigration performance of the copper interconnect is provided. The method includes removing contaminants and metal oxides from the substrate surface in the integrated system, and reconditioning the substrate surface using a reducing environment after removing contaminants and metal oxides in the integrated system. The method also includes selectively depositing the thin layer of cobalt-alloy material on the copper surface of the copper interconnect in the integrated system after reconditioning the substrate surface. An exemplary system to practice the exemplary method described above is also provided.
摘要翻译：这些实施方案通过提供改进的工艺和系统来提供改进的金属 - 金属界面，更具体地说是铜 - 金属界面，从而满足增强电迁移性能，提供较低的金属电阻率以及改善铜互连的金属 - 金属界面粘附的需要，钴合金界面。提供了一种制备基板的基板表面的示例性方法，以在集成系统中选择性地在基板的铜互连的铜表面上沉积钴合金材料的薄层，以改善铜互连的电迁移性能。该方法包括从集成系统中的衬底表面去除污染物和金属氧化物，并且在去除集成系统中的污染物和金属氧化物之后，使用还原环境来修复衬底表面。该方法还包括在修复基板表面之后，在集成系统中的铜互连的铜表面上选择性地沉积钴合金材料的薄层。还提供了用于实践上述示例性方法的示例性系统。

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