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51. 发明申请

US20100038826A1 SHEET THICKNESS CONTROL 有权
标题翻译：厚度控制
公开(公告)号：US20100038826A1
公开(公告)日：2010-02-18
申请号：US12539125
申请日：2009-08-11
申请人： Peter L. Kellerman , Frederick Carlson , Frank Sinclair
发明人： Peter L. Kellerman , Frederick Carlson , Frank Sinclair
IPC分类号： B29B13/08 , B22D23/00 , B22C9/08 , B29C39/44 , B29C39/38
CPC分类号： C30B29/06 , C30B11/001 , C30B11/003 , C30B28/06 , C30B29/403 , C30B29/406 , C30B29/52 , C30B29/64 , H01L31/182 , Y02E10/546 , Y02P70/521 , Y10T117/1024
摘要： A method and apparatus for forming a sheet are disclosed. A melt is cooled and a sheet is formed on the melt. This sheet has a first thickness. The sheet is then thinned from the first thickness to a second thickness using, for example, a heater or the melt. The cooling may be configured to allow solutes to be trapped in a region of the sheet and this particular sheet may be thinned and the solutes removed. The melt may be, for example, silicon, silicon and germanium, gallium, or gallium nitride.
摘要翻译：公开了一种用于形成片材的方法和装置。将熔体冷却并在熔体上形成片材。该片材具有第一厚度。然后使用例如加热器或熔体将片材从第一厚度变薄至第二厚度。冷却可以被配置为允许溶质被捕获在片材的区域中，并且该特定片材可以变薄并且去除溶质。熔体可以是例如硅，硅和锗，镓或氮化镓。

52. 发明授权

US07622724B2 High voltage insulator for preventing instability in an ion implanter due to triple-junction breakdown 有权
标题翻译：高压绝缘子，用于防止由于三结击穿引起的离子注入机的不稳定性
公开(公告)号：US07622724B2
公开(公告)日：2009-11-24
申请号：US11767657
申请日：2007-06-25
申请人： Shengwu Chang , Frank Sinclair
发明人： Shengwu Chang , Frank Sinclair
IPC分类号： G21K5/00
CPC分类号： H01B17/64
摘要： A high voltage insulator for preventing instability in an ion implanter due to triple junction breakdown is described. In one embodiment, there is an apparatus for preventing triple junction instability in an ion implanter. In this embodiment, there is a first metal electrode and a second metal electrode. An insulator is disposed between the first metal electrode and the second metal electrode. The insulator has at least one surface between the first metal electrode and the second metal electrode that is exposed to a vacuum that transports an ion beam generated by the ion implanter. A first conductive layer is located between the first metal electrode and the insulator. The first conductive layer prevents triple junction breakdown from occurring at an interface of the first electrode, insulator and vacuum. A second conductive layer is located between the second metal electrode and the insulator opposite the first conductive layer. The second conductive layer prevents triple junction breakdown from occurring at an interface of the second electrode, insulator and vacuum.
摘要翻译：描述了一种用于防止由于三结击穿引起的离子注入机不稳定性的高压绝缘体。在一个实施例中，存在用于防止离子注入机中的三重连接不稳定性的装置。在本实施例中，存在第一金属电极和第二金属电极。绝缘体设置在第一金属电极和第二金属电极之间。绝缘体具有在第一金属电极和第二金属电极之间的至少一个表面，其暴露于输送由离子注入机产生的离子束的真空。第一导电层位于第一金属电极和绝缘体之间。第一导电层防止在第一电极，绝缘体和真空的界面处发生三结击穿。第二导电层位于第二金属电极和与第一导电层相对的绝缘体之间。第二导电层防止在第二电极，绝缘体和真空的界面处发生三结击穿。

53. 发明授权

US06347919B1 Wafer processing chamber having separable upper and lower halves 失效
标题翻译：晶圆处理室具有可分离的上半部和下半部
公开(公告)号：US06347919B1
公开(公告)日：2002-02-19
申请号：US09466416
申请日：1999-12-17
申请人： Kevin Thomas Ryan , Peter Lawrence Kellerman , Frank Sinclair , Ernest Everett Allen , Roger Bradford Fish
发明人： Kevin Thomas Ryan , Peter Lawrence Kellerman , Frank Sinclair , Ernest Everett Allen , Roger Bradford Fish
IPC分类号： B65G4907
CPC分类号： H01L21/67126 , H01L21/67742 , H01L21/67745 , Y10S414/139
摘要： A wafer processing apparatus includes a processing chamber having a top chamber portion and a bottom chamber portion, respectively. The apparatus further includes an annular ring valve associated with one of the top chamber portion and the bottom chamber portion which is operable to close the processing chamber for processing in a first position and open the processing chamber for access thereto in a second position. The ring valve, in the first position, provides a substantially uniform surface about an inner periphery of the closed processing chamber, and thereby facilitates uniform processing conditions. A method of accessing a wafer processing apparatus is also disclosed and includes moving an annular ring valve within a processing chamber between two positions. In the first position the annular ring valve sealingly blocks an access port of the processing chamber and thereby prohibits access thereto, and in the second position the annular ring valve does not block the access port, and permits access to the processing chamber. The annular ring valve has a substantially uniform inner peripheral surface, and thereby facilitates uniform processing conditions within the processing chamber when in the first position.
摘要翻译：晶片处理装置包括分别具有顶部室部分和底部室部分的处理室。该装置还包括与顶部室部分和底部室部分中的一个相关联的环形环阀，其可操作以在第一位置关闭处理室以进行处理，并打开处理室以在第二位置进入其中。环形阀在第一位置处提供围绕封闭处理室的内周的基本均匀的表面，从而有利于均匀的加工条件。还公开了访问晶片处理装置的方法，并且包括将处理室内的环形环阀移动到两个位置之间。在第一位置，环形环阀密封地阻挡处理室的进入口，从而禁止进入其中，并且在第二位置，环形环阀不阻挡进入口，并允许进入处理室。环形环具有基本上均匀的内周面，从而在处于第一位置时有利于处理室内的均匀加工条件。

54. 发明授权

US09012337B2 Platen control 有权
标题翻译：压板控制
公开(公告)号：US09012337B2
公开(公告)日：2015-04-21
申请号：US13270644
申请日：2011-10-11
申请人： Shengwu Chang , Joseph C. Olson , Frank Sinclair , Matthew P. McClellan , Antonella Cucchetti
发明人： Shengwu Chang , Joseph C. Olson , Frank Sinclair , Matthew P. McClellan , Antonella Cucchetti
IPC分类号： H01L21/027 , H01L21/66 , H01L21/67
CPC分类号： H01L21/67109 , H01L21/67288
摘要： A system and method for maintain a desired degree of platen flatness is disclosed. A laser system is used to measure the flatness of a platen. The temperature of the platen is then varied to achieve the desired level of flatness. In some embodiments, this laser system is only used during a set up period and the resulting desired temperature is then used during normal operation. In other embodiments, a laser system is used to measure the flatness of the platen, even while the workpiece is being processed.
摘要翻译：公开了一种用于保持期望的压板平整度的系统和方法。激光系统用于测量压板的平整度。然后改变压板的温度以达到所需的平坦度水平。在一些实施例中，该激光系统仅在建立周期期间使用，然后在正常操作期间使用所得到的期望温度。在其他实施例中，即使在正在处理工件时，也使用激光系统来测量压板的平坦度。

55. 发明授权

US08933335B2 Current lead with a configuration to reduce heat load transfer in an alternating electrical current environment 有权
标题翻译：电流引线，配置为减少交流电流环境中的热负荷传递
公开(公告)号：US08933335B2
公开(公告)日：2015-01-13
申请号：US13273927
申请日：2011-10-14
申请人： Gregory Citver , Frank Sinclair , D. Jeffrey Lischer , Nandishkumar Desai
发明人： Gregory Citver , Frank Sinclair , D. Jeffrey Lischer , Nandishkumar Desai
IPC分类号： H01B5/00 , H01F6/06
CPC分类号： H01F6/065 , Y10T29/49117
摘要： A current lead with a configuration to reduce heat load transfer in an alternating electrical current (AC) environment is disclosed. The current lead may comprise a conductive material having a configuration for reducing heat load transfer across the current lead when an alternating electrical current (AC) is applied to the current lead. A temperature gradient a may be exhibited along a length of the current lead.
摘要翻译：公开了一种具有在交流电流（AC）环境中减少热负荷传递的配置的电流引线。电流引线可以包括导电材料，其具有当将交流电流（AC）施加到电流引线时用于减少穿过电流引线的热负荷传递的构造。可以沿着电流引线的长度显示温度梯度a。

56. 发明授权

US08501624B2 Excited gas injection for ion implant control 有权
标题翻译：激发气体注入用于离子注入控制
公开(公告)号：US08501624B2
公开(公告)日：2013-08-06
申请号：US12328096
申请日：2008-12-04
申请人： Bon-Woong Koo , Victor Benveniste , Christopher A. Rowland , Craig R. Chaney , Frank Sinclair , Neil J. Bassom
发明人： Bon-Woong Koo , Victor Benveniste , Christopher A. Rowland , Craig R. Chaney , Frank Sinclair , Neil J. Bassom
IPC分类号： H01L21/302 , H01L21/461
CPC分类号： H01J27/022 , H01J37/08 , H01J37/3171 , H01J37/32357 , H01J37/32412 , H01J37/32422 , H01J2237/006 , H01J2237/061 , H01J2237/0815 , H01J2237/24514
摘要： An ion source that utilizes exited and/or atomic gas injection is disclosed. In an ion beam application, the source gas can be used directly, as it is traditionally supplied. Alternatively or additionally, the source gas can be altered by passing it through a remote plasma source prior to being introduced to the ion source chamber. This can be used to create excited neutrals, heavy ions, metastable molecules or multiply charged ions. In another embodiment, multiple gasses are used, where one or more of the gasses are passed through a remote plasma generator. In certain embodiments, the gasses are combined in a single plasma generator before being supplied to the ion source chamber. In plasma immersion applications, plasma is injected into the process chamber through one or more additional gas injection locations. These injection locations allow the influx of additional plasma, produced by remote plasma sources external to the process chamber.
摘要翻译：公开了一种利用离子源和/或原子气体注入的离子源。在离子束施加中，源气体可以直接使用，如通常提供的。或者或另外，源气体可以在被引入离子源室之前通过将其通过远程等离子体源来改变。这可以用于产生兴奋的中性粒子，重离子，亚稳分子或多电荷离子。在另一个实施例中，使用多个气体，其中一个或多个气体通过远程等离子体发生器。在某些实施方案中，气体在被提供给离子源室之前组合在单个等离子体发生器中。在等离子体浸渍应用中，通过一个或多个另外的气体注入位置将等离子体注入到处理室中。这些注入位置允许通过处理室外部的远程等离子体源产生的附加等离子体的流入。

57. 发明授权

US08466431B2 Techniques for improving extracted ion beam quality using high-transparency electrodes 有权
标题翻译：使用高透明电极提高离子束质量的技术
公开(公告)号：US08466431B2
公开(公告)日：2013-06-18
申请号：US12370555
申请日：2009-02-12
申请人： James S. Buff , Svetlana Radovanov , Bon-Woong Koo , Wilhelm Platow , Frank Sinclair , D. Jeffrey Lischer , Craig R. Chaney , Steven Borichevsky , Eric R. Cobb , Mayur Jagtap , Kenneth H. Purser , Victor Benveniste , Shardul S. Patel
发明人： James S. Buff , Svetlana Radovanov , Bon-Woong Koo , Wilhelm Platow , Frank Sinclair , D. Jeffrey Lischer , Craig R. Chaney , Steven Borichevsky , Eric R. Cobb , Mayur Jagtap , Kenneth H. Purser , Victor Benveniste , Shardul S. Patel
IPC分类号： H01J37/15 , G21K5/10
CPC分类号： H01J37/3171 , H01J27/024 , H01J37/08 , H01J37/09 , H01J37/304 , H01J2237/0453 , H01J2237/0458 , H01J2237/083 , H01J2237/24542
摘要： Techniques for improving extracted ion beam quality using high-transparency electrodes are disclosed. In one particular exemplary embodiment, the techniques may be realized as an apparatus for ion implantation. The apparatus may comprise an ion source for generating an ion beam, wherein the ion source comprises a faceplate with an aperture for the ion beam to travel therethrough. The apparatus may also comprise a set of extraction electrodes comprising at least a suppression electrode and a high-transparency ground electrode, wherein the set of extraction electrodes may extract the ion beam from the ion source via the faceplate, and wherein the high-transparency ground electrode may be configured to optimize gas conductance between the suppression electrode and the high-transparency ground electrode for improved extracted ion beam quality.
摘要翻译：公开了使用高透明电极提高离子束质量的技术。在一个特定的示例性实施例中，技术可以被实现为用于离子注入的装置。该装置可以包括用于产生离子束的离子源，其中离子源包括具有离子束穿过其中的孔的面板。该装置还可以包括至少包括抑制电极和高透明度接地电极的一组提取电极，其中所述提取电极组可以经由面板从离子源提取离子束，并且其中高透明度接地电极可以被配置为优化抑制电极和高透明度接地电极之间的气体传导，以改善提取的离子束质量。

58. 发明授权

US08436318B2 Apparatus for controlling the temperature of an RF ion source window 失效
标题翻译：用于控制RF离子源窗口的温度的装置
公开(公告)号：US08436318B2
公开(公告)日：2013-05-07
申请号：US12754258
申请日：2010-04-05
申请人： Frank Sinclair , Costel Biloiu , Bon-Woong Koo , Victor Benveniste , Shardul Patel
发明人： Frank Sinclair , Costel Biloiu , Bon-Woong Koo , Victor Benveniste , Shardul Patel
IPC分类号： H01J27/00
CPC分类号： H01J37/32495 , H01J27/16 , H01J37/08 , H01J37/3171 , H01J37/321 , H01J37/32412 , H01J37/32422 , H01J37/32522 , H01J2237/022 , H01J2237/0266 , H01J2237/0817
摘要： An RF ion source utilizing a heating/RF-shielding element for controlling the temperature of an RF window and to act as an RF shielding element for the RF ion source. When the heating/RF shielding element is in a heating mode, it suppresses formation of unwanted deposits on the RF window which negatively impacts the transfer of RF energy from an RF antenna to a plasma chamber. When the heating/RF-shielding element is in a shielding mode, it provides an electrostatic shielding for the RF ion source.
摘要翻译： RF离子源，其利用加热/ RF屏蔽元件来控制RF窗口的温度并用作RF离子源的RF屏蔽元件。当加热/ RF屏蔽元件处于加热模式时，它抑制在RF窗口上形成不需要的沉积物，这对RF能量从RF天线到等离子体室的转移产生负面影响。当加热/ RF屏蔽元件处于屏蔽模式时，它为RF离子源提供静电屏蔽。

59. 发明申请

US20130001414A1 SYSTEM AND METHOD FOR PRODUCING A MASS ANALYZED ION BEAM FOR HIGH THROUGHPUT OPERATION 审中-公开
标题翻译：用于生产用于高通量运行的质量分析离子束的系统和方法
公开(公告)号：US20130001414A1
公开(公告)日：2013-01-03
申请号：US13175404
申请日：2011-07-01
申请人： Victor M. Benveniste , Frank Sinclair , Svetlana Radovanov , Bon-Woong Koo
发明人： Victor M. Benveniste , Frank Sinclair , Svetlana Radovanov , Bon-Woong Koo
IPC分类号： H01J49/10
CPC分类号： H01J37/05 , H01J37/1472 , H01J37/3171 , H01J49/30 , H01J2237/055 , H01J2237/057
摘要： A system for producing a mass analyzed ion beam for implanting into a workpiece, includes an extraction plate having a set of apertures having a longitudinal axis of the aperture. The set of apertures are configured to extract ions from an ion source to form a plurality of beamlets. The system also includes an analyzing magnet region configured to provide a magnetic field to deflect ions in the beamlets in a first direction that is generally perpendicular to the longitudinal axis of the apertures. The system further includes a mass analysis plate having a set of apertures configured to transmit first ion species having a first mass/charge ratio and to block second ion species having a second mass/charge ratio and a workpiece holder configured to move with respect to the mass analysis plate along the first direction.
摘要翻译：用于生产用于植入工件的质量分析离子束的系统包括具有一组具有孔的纵向轴线的孔的抽出板。该组孔被构造成从离子源提取离子以形成多个子束。该系统还包括分析磁体区域，其被配置为提供磁场以沿着大致垂直于孔的纵向轴线的第一方向偏转子束中的离子。该系统还包括质量分析板，该质量分析板具有一组孔口，其被配置为透射具有第一质量/带电比的第一离子种类并阻挡具有第二质量/加料比的第二离子种类和被配置为相对于质量分析板沿第一方向。

60. 发明申请

US20120293070A1 PLASMA ATTENUATION FOR UNIFORMITY CONTROL 有权
标题翻译：平等控制的等离子体衰减
公开(公告)号：US20120293070A1
公开(公告)日：2012-11-22
申请号：US13108052
申请日：2011-05-16
申请人： Peter Kurunczi , Frank Sinclair , Costel Biloiu , Ludovic Godet , Ernest Allen
发明人： Peter Kurunczi , Frank Sinclair , Costel Biloiu , Ludovic Godet , Ernest Allen
IPC分类号： H05H1/24
CPC分类号： H01J37/08 , H01J37/3171 , H01J37/3211 , H01J37/32119 , H01J37/32669
摘要： A plasma processing apparatus and method are disclosed which create a uniform plasma within an enclosure. In one embodiment, a conductive or ferrite material is used to influence a section of the antenna, where a section is made up of portions of multiple coiled segments. In another embodiment, a ferrite material is used to influence a portion of the antenna. In another embodiment, plasma uniformity is improved by modifying the internal shape and volume of the enclosure.
摘要翻译：公开了一种等离子体处理装置和方法，其在外壳内产生均匀的等离子体。在一个实施例中，导电或铁氧体材料用于影响天线的一部分，其中一部分由多个线圈段的部分组成。在另一个实施例中，铁氧体材料用于影响天线的一部分。在另一个实施例中，通过改变外壳的内部形状和体积来提高等离子体的均匀性。

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