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51. 发明授权

US5846871A Integrated circuit fabrication 失效
标题翻译：集成电路制造
公开(公告)号：US5846871A
公开(公告)日：1998-12-08
申请号：US918394
申请日：1997-08-26
申请人： Jean Ling Lee , Yi Ma , Sailesh Mansinh Merchant
发明人： Jean Ling Lee , Yi Ma , Sailesh Mansinh Merchant
IPC分类号： H01L29/78 , H01L21/28 , H01L21/8238 , H01L27/092 , H01L21/283
CPC分类号： H01L21/823835 , H01L21/28061
摘要： Undesirable counter doping of n.sup.+ /p.sup.+ gates illustratively through cross diffusion through an overlying silicide is inhibited by insertion of layers of titanium nitride and titanium, tungsten or tantalum between the polysilicon gates and an overlying silicide.
摘要翻译：例如通过穿过上覆硅化物的交叉扩散，n + / p +门的不期望的反向掺杂被多晶硅栅极和覆盖的硅化物之间插入氮化钛和钛，钨或钽层。

52. 发明申请

US20150072625A1 SOURCE DETECTION BY SPECTRUM SENSING 审中-公开
标题翻译：通过光谱感测的源检测
公开(公告)号：US20150072625A1
公开(公告)日：2015-03-12
申请号：US14110447
申请日：2012-04-04
申请人： Parisa Cheraghi , Yi Ma , Rahim Tafazolli
发明人： Parisa Cheraghi , Yi Ma , Rahim Tafazolli
IPC分类号： H04B17/00
CPC分类号： H04B17/318 , H04L27/0006 , H04W16/14
摘要： A source detection system for detecting wireless communication signals, the system comprising: receiving means for receiving a signal; and processing means arranged to filter the signal to separate it into a plurality of frequency components, determine an energy content for each of the frequency components, calculate a measure of the difference between the energy contents of respective frequency components, and make a determination, from said measure, whether the signal has been transmitted from a source.
摘要翻译：一种用于检测无线通信信号的源检测系统，所述系统包括：接收装置，用于接收信号; 以及处理装置，被布置为对信号进行滤波以将其分离成多个频率分量，确定每个频率分量的能量含量，计算各个频率分量的能量内容之间的差的度量，并且从所述测量，信号是否已经从源传输。

53. 发明授权

US08847192B2 Resistive switching devices having alloyed electrodes and methods of formation thereof 有权
标题翻译：具有合金电极的电阻式开关器件及其形成方法
公开(公告)号：US08847192B2
公开(公告)日：2014-09-30
申请号：US13558296
申请日：2012-07-25
申请人： Wei Ti Lee , Chakravarthy Gopalan , Yi Ma , Jeffrey Shields , Philippe Blanchard , John Ross Jameson , Foroozan Sarah Koushan , Janet Wang , Mark Kellam
发明人： Wei Ti Lee , Chakravarthy Gopalan , Yi Ma , Jeffrey Shields , Philippe Blanchard , John Ross Jameson , Foroozan Sarah Koushan , Janet Wang , Mark Kellam
IPC分类号： H01L47/00 , H01L45/00
CPC分类号： H01L45/08 , H01L45/085 , H01L45/1233 , H01L45/1266 , H01L45/142 , H01L45/144 , H01L45/146 , H01L45/147 , H01L45/16 , H01L45/1658
摘要： In accordance with an embodiment of the present invention, a resistive switching device comprises a bottom electrode, a switching layer disposed over the bottom electrode, and a top electrode disposed over the switching layer. The top electrode comprises an alloy of a memory metal and an alloying element. The top electrode provides a source of the memory metal. The memory metal is configured to change a state of the switching layer.
摘要翻译：根据本发明的实施例，电阻式开关装置包括底电极，设置在底电极上的开关层和设置在开关层上的顶电极。顶部电极包括记忆金属和合金元素的合金。顶部电极提供存储金属的源。存储器金属被配置为改变开关层的状态。

54. 发明授权

US08774558B2 Rectification of characters and text as transform invariant low-rank textures 有权
标题翻译：将字符和文本整理为变形不变的低阶纹理
公开(公告)号：US08774558B2
公开(公告)日：2014-07-08
申请号：US13310730
申请日：2011-12-03
申请人： Xin Zhang , Zhengdong Zhang , Xiao Liang , Zhouchen Lin , Yi Ma
发明人： Xin Zhang , Zhengdong Zhang , Xiao Liang , Zhouchen Lin , Yi Ma
IPC分类号： G06K9/36 , G06K9/32
CPC分类号： G06K9/3275 , G06K9/6249 , G06K2209/01
摘要： A “Text Rectifier” provides various techniques for processing selected regions of an image containing text or characters by treating those images as matrices of low-rank textures and using a rank minimization technique that recovers and removes image deformations (e.g., affine and projective transforms as well as general classes of nonlinear transforms) while rectifying the text or characters in the image region. Once distortions have been removed and the text or characters rectified, the resulting text is made available for a variety of uses or further processing such as optical character recognition (OCR). In various embodiments, binarization and/or inversion techniques are applied to the selected image regions during the rank minimization process to both improve text rectification and to present the resulting images of text to an OCR engine in a form that enhances the accuracy of the OCR results.
摘要翻译： “文本整流器”提供了通过将这些图像作为低阶纹理矩阵来处理包含文本或字符的图像的所选区域的各种技术，并且使用恢复和去除图像变形的秩最小化技术（例如，仿射和投影变换为以及非线性变换的一般类），同时整理图像区域中的文本或字符。一旦失真被消除并且文本或者字符被纠正，所得到的文本可用于各种用途或进一步的处理，例如光学字符识别（OCR）。在各种实施例中，在秩最小化处理期间将二值化和/或反转技术应用于所选择的图像区域，以改善文本校正，并以提高OCR结果的准确性的形式向OCR引擎呈现文本的所得图像。

55. 发明授权

US08563441B2 Methods for fabricating memory cells having fin structures with smooth sidewalls and rounded top corners and edges 有权
标题翻译：用于制造具有平滑侧壁和圆形顶角和边缘的翅片结构的存储单元的方法
公开(公告)号：US08563441B2
公开(公告)日：2013-10-22
申请号：US12111122
申请日：2008-04-28
申请人： Yi Ma , Robert Bertram Ogle
发明人： Yi Ma , Robert Bertram Ogle
IPC分类号： H01L21/302 , H01L21/461 , H01L21/4763 , H01L21/311
CPC分类号： H01L21/324 , H01L21/3247 , H01L27/11568 , H01L29/66795 , H01L29/66833 , H01L29/7854 , H01L29/792
摘要： Methods for fabricating a semiconductor FIN structure with smooth sidewalls and rounded top corners and edges is disclosed. A method includes forming a plurality of semiconductor FIN structures. A sacrificial oxide layer is formed on the top surface and the sidewall surfaces of the plurality of semiconductor FIN structures for rounding the corners and edges between the top surfaces and the sidewall surfaces of the plurality of semiconductor FIN structures. The sacrificial oxide layer is removed with a high selectivity oxide etchant. The plurality of semiconductor FIN structures are annealed in a hydrogen environment. A tunnel oxide is formed over the plurality of semiconductor FIN structures.
摘要翻译：公开了制造具有平滑侧壁和圆角顶角和边缘的半导体FIN结构的方法。一种方法包括形成多个半导体FIN结构。在多个半导体FIN结构的顶表面和侧壁表面上形成牺牲氧化物层，用于使多个半导体FIN结构的顶表面和侧壁表面之间的角和边缘倒圆。用高选择性氧化物蚀刻剂除去牺牲氧化物层。多个半导体FIN结构在氢环境中退火。在多个半导体FIN结构上形成隧道氧化物。

56. 发明申请

US20120134588A1 RECTIFICATION OF CHARACTERS AND TEXT AS TRANSFORM INVARIANT LOW-RANK TEXTURES 有权
标题翻译：字符和文本的修正作为变换不变的低排序纹理
公开(公告)号：US20120134588A1
公开(公告)日：2012-05-31
申请号：US13310730
申请日：2011-12-03
申请人： Xin Zhang , Zhengdong Zhang , Xiao Liang , Zhouchen Lin , Yi Ma
发明人： Xin Zhang , Zhengdong Zhang , Xiao Liang , Zhouchen Lin , Yi Ma
IPC分类号： G06K9/34
CPC分类号： G06K9/3275 , G06K9/6249 , G06K2209/01
摘要： A “Text Rectifier” provides various techniques for processing selected regions of an image containing text or characters by treating those images as matrices of low-rank textures and using a rank minimization technique that recovers and removes image deformations (e.g., affine and projective transforms as well as general classes of nonlinear transforms) while rectifying the text or characters in the image region. Once distortions have been removed and the text or characters rectified, the resulting text is made available for a variety of uses or further processing such as optical character recognition (OCR). In various embodiments, binarization and/or inversion techniques are applied to the selected image regions during the rank minimization process to both improve text rectification and to present the resulting images of text to an OCR engine in a form that enhances the accuracy of the OCR results.
摘要翻译： “文本整流器”提供了通过将这些图像作为低阶纹理矩阵来处理包含文本或字符的图像的选定区域的各种技术，并且使用恢复和去除图像变形的秩最小化技术（例如，仿射和投影变换为以及非线性变换的一般类），同时整理图像区域中的文本或字符。一旦失真被消除并且文本或者字符被纠正，则所得到的文本可用于各种用途或进一步的处理，例如光学字符识别（OCR）。在各种实施例中，在秩最小化处理期间将二值化和/或反转技术应用于所选择的图像区域，以改善文本校正，并以提高OCR结果的准确性的形式向OCR引擎呈现文本的所得图像。

57. 发明授权

US08043907B2 Atomic layer deposition processes for non-volatile memory devices 失效
标题翻译：用于非易失性存储器件的原子层沉积工艺
公开(公告)号：US08043907B2
公开(公告)日：2011-10-25
申请号：US12687732
申请日：2010-01-14
申请人： Yi Ma , Shreyas S. Kher , Khaled Ahmed , Tejal Goyani , Maitreyee Mahajani , Jallepally Ravi , Yi-Chiau Huang
发明人： Yi Ma , Shreyas S. Kher , Khaled Ahmed , Tejal Goyani , Maitreyee Mahajani , Jallepally Ravi , Yi-Chiau Huang
IPC分类号： H01L21/8238
CPC分类号： H01L29/42324 , H01L21/28273 , H01L29/7881
摘要： Embodiments of the invention provide memory devices and methods for forming such memory devices. In one embodiment, a method for fabricating a non-volatile memory device on a substrate is provided which includes depositing a first polysilicon layer on a substrate surface, depositing a silicon oxide layer on the first polysilicon layer, depositing a first silicon oxynitride layer on the silicon oxide layer, depositing a silicon nitride layer on the first silicon oxynitride layer, depositing a second silicon oxynitride layer on the silicon nitride layer, and depositing a second polysilicon layer on the second silicon oxynitride layer. In some examples, the first polysilicon layer is a floating gate and the second polysilicon layer is a control gate.
摘要翻译：本发明的实施例提供了用于形成这种存储器件的存储器件和方法。在一个实施例中，提供了一种用于在衬底上制造非易失性存储器件的方法，其包括在衬底表面上沉积第一多晶硅层，在第一多晶硅层上沉积氧化硅层，在第一多晶硅层上沉积第一氧氮化硅层氧化硅层，在第一氧氮化硅层上沉积氮化硅层，在氮化硅层上沉积第二氮氧化硅层，以及在第二氮氧化硅层上沉积第二多晶硅层。在一些示例中，第一多晶硅层是浮置栅极，第二多晶硅层是控制栅极。

58. 发明申请

US20100102376A1 Atomic Layer Deposition Processes for Non-Volatile Memory Devices 失效
标题翻译：非易失性存储器件的原子层沉积工艺
公开(公告)号：US20100102376A1
公开(公告)日：2010-04-29
申请号：US12687732
申请日：2010-01-14
申请人： Yi Ma , Shreyas S. Kher , Khaled Ahmed , Tejal Goyani , Maitreyee Mahajani , Jallepally Ravi , Yi-Chiau Huang
发明人： Yi Ma , Shreyas S. Kher , Khaled Ahmed , Tejal Goyani , Maitreyee Mahajani , Jallepally Ravi , Yi-Chiau Huang
IPC分类号： H01L29/788 , H01L21/336
CPC分类号： H01L29/42324 , H01L21/28273 , H01L29/7881
摘要： Embodiments of the invention provide memory devices and methods for forming such memory devices. In one embodiment, a method for fabricating a non-volatile memory device on a substrate is provided which includes depositing a first polysilicon layer on a substrate surface, depositing a silicon oxide layer on the first polysilicon layer, depositing a first silicon oxynitride layer on the silicon oxide layer, depositing a silicon nitride layer on the first silicon oxynitride layer, depositing a second silicon oxynitride layer on the silicon nitride layer, and depositing a second polysilicon layer on the second silicon oxynitride layer. In some examples, the first polysilicon layer is a floating gate and the second polysilicon layer is a control gate.
摘要翻译：本发明的实施例提供了用于形成这种存储器件的存储器件和方法。在一个实施例中，提供了一种用于在衬底上制造非易失性存储器件的方法，其包括在衬底表面上沉积第一多晶硅层，在第一多晶硅层上沉积氧化硅层，在第一多晶硅层上沉积第一氧氮化硅层氧化硅层，在第一氧氮化硅层上沉积氮化硅层，在氮化硅层上沉积第二氮氧化硅层，以及在第二氮氧化硅层上沉积第二多晶硅层。在一些示例中，第一多晶硅层是浮置栅极，第二多晶硅层是控制栅极。

59. 发明申请

US20090246972A1 METHODS FOR MANUFACTURING HIGH DIELECTRIC CONSTANT FILM 有权
标题翻译：制造高介电常数膜的方法
公开(公告)号：US20090246972A1
公开(公告)日：2009-10-01
申请号：US12057113
申请日：2008-03-27
申请人： SHREYAS S. KHER , Pravin K. Narwankar , Khaled Z. Ahmed , Yi Ma
发明人： SHREYAS S. KHER , Pravin K. Narwankar , Khaled Z. Ahmed , Yi Ma
IPC分类号： H01L21/31
CPC分类号： H01L21/31645 , C23C14/083 , C23C16/56 , H01L21/3141
摘要： Processes for making a high K (dielectric constant) film using an ultra-high purity hafnium containing organometallic compound are disclosed. Also described are devices incorporating high K films made with high purity hafnium containing organometallic compounds.
摘要翻译：公开了使用含有超高纯度铪的有机金属化合物制造高K（介电常数）膜的方法。还描述了包含用高纯度铪含有有机金属化合物制成的高K膜的装置。

60. 发明授权

US06544907B1 Method of forming a high quality gate oxide layer having a uniform thickness 有权
标题翻译：形成厚度均匀的高品质栅氧化层的方法
公开(公告)号：US06544907B1
公开(公告)日：2003-04-08
申请号：US09689030
申请日：2000-10-12
申请人： Yi Ma , Edith Yang
发明人： Yi Ma , Edith Yang
IPC分类号： H01L2131
CPC分类号： H01L21/28211
摘要： The present invention provides a method for manufacturing a high quality oxide layer having a uniform thickness. The method includes providing a semiconductor substrate, and forming an oxide layer having a substantially uniform thickness on the semiconductor substrate, and in a zone of pressure of less than about 4 Torr or greater than about 25 Torr.
摘要翻译：本发明提供一种具有均匀厚度的高品质氧化物层的制造方法。该方法包括提供半导体衬底，以及在半导体衬底上形成具有基本上均匀厚度的氧化物层，以及小于约4Torr或大于约25Torr的压力区。

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