专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

51. 发明申请

US20050255667A1 Method of inducing stresses in the channel region of a transistor 失效
标题翻译：在晶体管的沟道区域中产生应力的方法
公开(公告)号：US20050255667A1
公开(公告)日：2005-11-17
申请号：US10846734
申请日：2004-05-14
申请人： Reza Arghavani , Zheng Yuan , Ellie Yieh , Shankar Venkataraman , Nitin Ingle
发明人： Reza Arghavani , Zheng Yuan , Ellie Yieh , Shankar Venkataraman , Nitin Ingle
IPC分类号： H01L21/336 , H01L21/76 , H01L21/8238 , H01L29/00 , H01L29/78
CPC分类号： H01L29/6656 , H01L21/823807 , H01L29/6659 , H01L29/7833 , H01L29/7846
摘要： A method of fabricating a semiconductor device, where the method includes forming on a transistor on a substrate, where the transistor includes a channel region configured to conduct charge between a source region and a drain region, forming a trench adjacent to the transistor, depositing a material on the substrate and within the trench, and annealing the material, where the material is tensile following the annealing and creates a tensile stress in the channel region. Also, a method of forming a trench isolation in a semiconductor device, where the method includes forming a trench in a substrate, forming a material within the trench at a lower deposition rate, forming the material on the substrate at a higher deposition rate after the depositing of the material within the trench, and annealing the material, where after the annealing the material in the trench is tensile.
摘要翻译：一种制造半导体器件的方法，其中所述方法包括在衬底上的晶体管上形成晶体管，其中所述晶体管包括被配置为在源极区域和漏极区域之间导电的沟道区域，形成与所述晶体管相邻的沟槽，材料在衬底上并在沟槽内，并退火材料，其中材料在退火之后是拉伸的，并且在沟道区域中产生拉伸应力。另外，在半导体器件中形成沟槽隔离的方法，其中所述方法包括在衬底中形成沟槽，以较低的沉积速率在沟槽内形成材料，在衬底上以更高的沉积速率在衬底上形成材料在沟槽内沉积材料并退火材料，其中在退火之后，沟槽中的材料是拉伸的。

52. 发明授权

US06943127B2 CVD plasma assisted lower dielectric constant SICOH film 失效
标题翻译： CVD等离子体辅助低介电常数SICOH膜
公开(公告)号：US06943127B2
公开(公告)日：2005-09-13
申请号：US10302240
申请日：2002-11-22
申请人： Seon-Mee Cho , Peter Wai-Man Lee , Chi-I Lang , Dian Sugiarto , Chen-An Chen , Li-Qun Xia , Shankar Venkataraman , Ellie Yieh
发明人： Seon-Mee Cho , Peter Wai-Man Lee , Chi-I Lang , Dian Sugiarto , Chen-An Chen , Li-Qun Xia , Shankar Venkataraman , Ellie Yieh
IPC分类号： C23C16/30 , H01L21/316 , H01L21/42
CPC分类号： H01L21/02126 , C23C16/30 , H01L21/02211 , H01L21/02216 , H01L21/02274 , H01L21/02304 , H01L21/02362 , H01L21/31633 , Y10S438/931 , Y10T428/31909
摘要： A low dielectric constant film having silicon-carbon bonds and dielectric constant of about 3.0 or less, preferably about 2.5 or less, is provided. The low dielectric constant film is deposited by reacting a cyclic organosilicon compound and an aliphatic organosilicon compound with an oxidizing gas while applying RF power. The carbon content of the deposited film is between about 10 and about 30 atomic percent excluding hydrogen atoms, and is preferably between about 10 and about 20 atomic percent excluding hydrogen atoms.
摘要翻译：提供了具有约3.0或更小，优选约2.5或更小的硅 - 碳键和介电常数的低介电常数膜。通过使环状有机硅化合物和脂族有机硅化合物与氧化气体反应同时施加RF功率来沉积低介电常数膜。沉积膜的碳含量除氢原子以外约为10至约30原子百分比，优选除氢原子之外约10至约20原子％。

53. 发明申请

US20050070128A1 Post-deposition treatment to enhance properties of Si-O-C low K films 有权
标题翻译：后沉积处理以提高Si-O-C低K膜的性能
公开(公告)号：US20050070128A1
公开(公告)日：2005-03-31
申请号：US10990251
申请日：2004-11-15
申请人： Li-Qun Xia , Frederic Gaillard , Ellie Yieh , Tian Lim
发明人： Li-Qun Xia , Frederic Gaillard , Ellie Yieh , Tian Lim
IPC分类号： C23C16/02 , C23C16/40 , C23C16/56 , H01L21/3105 , H01L21/314 , H01L21/316 , H01L21/31
CPC分类号： H01L21/02126 , C23C16/0218 , C23C16/401 , C23C16/56 , H01L21/02071 , H01L21/02203 , H01L21/02211 , H01L21/02271 , H01L21/02274 , H01L21/02312 , H01L21/02337 , H01L21/0234 , H01L21/02362 , H01L21/3105 , H01L21/3146 , H01L21/31604 , H01L21/31612 , H01L21/31633 , H01L21/76807 , H01L21/76826 , H01L21/76837 , Y10S438/931
摘要： A method for providing a dielectric film having enhanced adhesion and stability. The method includes a post deposition treatment that densifies the film in a reducing atmosphere to enhance stability if the film is to be cured ex-situ. The densification generally takes place in a reducing environment while heating the substrate. The densification treatment is particularly suitable for silicon-oxygen-carbon low dielectric constant films that have been deposited at low temperature.
摘要翻译：一种用于提供具有增强的粘合性和稳定性的电介质膜的方法。该方法包括在还原气氛中使膜致密化的后沉积处理，以提高如果该膜不原位固化的稳定性。致密化通常在还原环境中进行，同时加热基底。致密化处理特别适用于在低温下沉积的硅 - 氧 - 碳低介电常数膜。

54. 发明申请

US20050020048A1 Method of depositing dielectric films 失效
标题翻译：沉积介质膜的方法
公开(公告)号：US20050020048A1
公开(公告)日：2005-01-27
申请号：US10894872
申请日：2004-07-20
申请人： Srinivas Nemani , Li-Qun Xia , Dian Sugiarto , Ellie Yieh , Ping Xu , Francimar Campana-Schmitt , Jia Lee
发明人： Srinivas Nemani , Li-Qun Xia , Dian Sugiarto , Ellie Yieh , Ping Xu , Francimar Campana-Schmitt , Jia Lee
IPC分类号： C23C16/42 , C23C16/32 , H01L21/20 , H01L21/314 , H01L21/768 , H01L23/522 , H01L21/331
CPC分类号： H01L21/76834 , C23C16/325 , H01L21/0332 , H01L21/3081 , H01L21/31144 , H01L21/314 , H01L21/3148 , H01L21/76801 , H01L21/76802 , H01L21/7681 , H01L21/76826 , H01L21/76829 , Y10S438/931
摘要： A method of forming a silicon carbide layer for use in integrated circuit fabrication processes is provided. The silicon carbide layer is formed by reacting a gas mixture comprising a silicon source, a carbon source, and a dopant in the presence of an electric field. The as-deposited silicon carbide layer has a compressibility that varies as a function of the amount of dopant present in the gas mixture during later formation.
摘要翻译：提供了一种形成用于集成电路制造工艺中的碳化硅层的方法。碳化硅层通过在电场存在下使包含硅源，碳源和掺杂剂的气体混合物反应而形成。沉积的碳化硅层具有随后期形成期间作为气体混合物中存在的掺杂剂量的函数而变化的压缩性。

55. 发明申请

US20050014361A1 Dielectric materials to prevent photoresist poisoning 失效
标题翻译：介电材料防止光致抗蚀剂中毒
公开(公告)号：US20050014361A1
公开(公告)日：2005-01-20
申请号：US10847891
申请日：2004-05-18
申请人： Son Nguyen , Michael Armacost , Mehul Naik , Girish Dixit , Ellie Yieh
发明人： Son Nguyen , Michael Armacost , Mehul Naik , Girish Dixit , Ellie Yieh
IPC分类号： H01L21/4763 , H01L21/768
CPC分类号： H01L21/76808
摘要： Methods are provided for depositing a dielectric material for use as an anti-reflective coating and sacrificial dielectric material in damascene formation. In one aspect, a process is provided for processing a substrate including depositing an acidic dielectric layer on the substrate by reacting an oxygen-containing organosilicon compound and an acidic compound, depositing a photoresist material on the acidic dielectric layer, and patterning the photoresist layer. The acidic dielectric layer may be used as a sacrificial layer in forming a feature definition by etching a partial feature definition, depositing the acidic dielectric material, etching the remainder of the feature definition, and then removing the acidic dielectric material to form a feature definition.
摘要翻译：提供了用于沉积电介质材料的方法，用作防蚀涂层和牺牲电介质材料在镶嵌形成中。在一个方面，提供了一种处理衬底的方法，包括通过使含氧有机硅化合物和酸性化合物反应，在酸性电介质层上沉积光致抗蚀剂材料，并使光致抗蚀剂层图形化，在衬底上沉积酸性介电层。通过蚀刻部分特征定义，沉积酸性电介质材料，蚀刻特征定义的其余部分，然后除去酸性介电材料以形成特征定义，可以将酸性介电层用作形成特征定义的牺牲层。

56. 发明授权

US06815373B2 Use of cyclic siloxanes for hardness improvement of low k dielectric films 有权
标题翻译：使用环状硅氧烷来改善低k电介质膜的硬度
公开(公告)号：US06815373B2
公开(公告)日：2004-11-09
申请号：US10124655
申请日：2002-04-16
申请人： Vinita Singh , Srinivas D. Nemani , Yi Zheng , Lihua Li , Tzu-Fang Huang , Li-Qun Xia , Ellie Yieh
发明人： Vinita Singh , Srinivas D. Nemani , Yi Zheng , Lihua Li , Tzu-Fang Huang , Li-Qun Xia , Ellie Yieh
IPC分类号： H01L2131
CPC分类号： H01L21/02126 , C23C16/30 , C23C16/401 , H01L21/02211 , H01L21/02216 , H01L21/02274 , H01L21/3122 , H01L21/31612 , H01L21/31633
摘要： A method for depositing a low dielectric constant film having a dielectric constant of about 3.5 or less is provided by blending one or more cyclic organosilicon compounds, one or more aliphatic organosilicon compounds, and one or more low molecular weight aliphatic hydrocarbon compounds. In one aspect, a gas mixture comprising one or more cyclic organosilicon compounds, one or more aliphatic organosilicon compounds, one or more aliphatic hydrocarbon compounds, one or more oxidizing gases, and a carrier gas is reacted at conditions sufficient to deposit a low dielectric constant film on a substrate surface.
摘要翻译：通过混合一种或多种环状有机硅化合物，一种或多种脂族有机硅化合物和一种或多种低分子量脂族烃化合物，提供介电常数为约3.5或更低的低介电常数膜的沉积方法。一方面，包含一种或多种环状有机硅化合物，一种或多种脂族有机硅化合物，一种或多种脂族烃化合物，一种或多种氧化性气体和载气的气体混合物在足以沉积低介电常数的条件下反应薄膜在基材表面上。

57. 发明授权

US06589888B2 Dual frequency plasma enhanced chemical vapor deposition of silicon carbide layers 有权
标题翻译：双频等离子体增强化学气相沉积碳化硅层
公开(公告)号：US06589888B2
公开(公告)日：2003-07-08
申请号：US10238195
申请日：2002-09-09
申请人： Srinivas Nemani , Li-Qun Xia , Ellie Yieh
发明人： Srinivas Nemani , Li-Qun Xia , Ellie Yieh
IPC分类号： H01L2131
CPC分类号： H01L21/76829 , C23C16/325 , C23C16/505 , H01L21/0276 , H01L21/3081 , H01L21/31144 , H01L21/314 , H01L21/7681
摘要： A method for forming a silicon carbide layer for use in integrated circuit fabrication is disclosed. The silicon carbide layer is formed by reacting a gas mixture of a silicon source, a carbon source, and an inert gas in the presence of an electric field. The electric field is generated using mixed frequency radio frequency (RE) power. The silicon carbide layer is compatible with integrated circuit fabrication processes. In one integrated circuit fabrication process, the silicon carbide layer is used as a hardmask for fabricating integrated circuit structures such as, for example, a damascene structure. In another integrated circuit fabrication process, the silicon carbide layer is used as an anti-reflective coating (ARC) for DUV lithography.
摘要翻译：公开了一种用于形成用于集成电路制造的碳化硅层的方法。碳化硅层通过在电场存在下使硅源，碳源和惰性气体的气体混合物反应而形成。使用混合频率射频（RE）功率产生电场。碳化硅层与集成电路制造工艺兼容。在一个集成电路制造工艺中，碳化硅层用作用于制造集成电路结构的硬掩模，例如镶嵌结构。在另一个集成电路制造工艺中，碳化硅层用作用于DUV光刻的抗反射涂层（ARC）。

58. 发明授权

US06573196B1 Method of depositing organosilicate layers 失效
标题翻译：沉积有机硅酸盐层的方法
公开(公告)号：US06573196B1
公开(公告)日：2003-06-03
申请号：US09638803
申请日：2000-08-12
申请人： Frederick Gaillard , Li-Qun Xia , Tian-Hoe Lim , Ellie Yieh
发明人： Frederick Gaillard , Li-Qun Xia , Tian-Hoe Lim , Ellie Yieh
IPC分类号： H01L21469
CPC分类号： H01L21/76835 , B05D1/62 , C23C16/30 , G03F7/091 , H01L21/02126 , H01L21/02211 , H01L21/02274 , H01L21/0276 , H01L21/31144 , H01L21/31604 , H01L21/31612 , H01L21/76801 , H01L21/76807 , H01L21/7681
摘要： A method of forming an organosilicate layer is disclosed. The organosilicate layer is formed by applying an electric field to a gas mixture comprising a phenyl-based silane compound. The gas mixture may optionally include an oxidizing gas. The organosilicate layer is compatible with integrated circuit fabrication processes. In one integrated circuit fabrication process, the organosilicate layer is used as an anti-reflective coating (ARC). In another integrated circuit fabrication process, the organosilicate layer is incorporated into a damascene structure.
摘要翻译：公开了形成有机硅酸盐层的方法。通过向包含苯基硅烷化合物的气体混合物施加电场而形成有机硅酸盐层。气体混合物可任选地包括氧化气体。有机硅酸盐层与集成电路制造工艺兼容。在一个集成电路制造工艺中，有机硅酸盐层用作抗反射涂层（ARC）。在另一集成电路制造工艺中，有机硅酸盐层被结合到镶嵌结构中。

59. 发明授权

US06531398B1 Method of depositing organosillicate layers 失效
标题翻译：沉积有机硅酸盐层的方法
公开(公告)号：US06531398B1
公开(公告)日：2003-03-11
申请号：US09702600
申请日：2000-10-30
申请人： Frederic Gaillard , Li-Qun Xia , Ellie Yieh , Paul Fisher , Srinivas D. Nemani
发明人： Frederic Gaillard , Li-Qun Xia , Ellie Yieh , Paul Fisher , Srinivas D. Nemani
IPC分类号： H01L2100
CPC分类号： H01L21/76828 , C23C16/401 , H01L21/02126 , H01L21/02208 , H01L21/02274 , H01L21/31612 , H01L21/76801 , H01L21/7681 , H01L21/76835
摘要： A method of forming an organosilicate layer is disclosed. The organosilicate layer is formed by applying an electric field to a gas mixture comprising an organosilane compound and an oxygen-containing gas. The organosilicate layer is compatible with integrated circuit fabrication processes. In one integrated circuit fabrication process, the organosilicate layer is used as an intermetal dielectric layer. In another integrated circuit fabrication process, the organosilicate layer is incorporated into a damascene structure.
摘要翻译：公开了形成有机硅酸盐层的方法。有机硅酸盐层通过向包含有机硅烷化合物和含氧气体的气体混合物施加电场而形成。有机硅酸盐层与集成电路制造工艺兼容。在一个集成电路制造工艺中，有机硅酸盐层用作金属间介电层。在另一集成电路制造工艺中，有机硅酸盐层被结合到镶嵌结构中。

60. 发明授权

US06514850B2 Interface with dielectric layer and method of making 失效
公开(公告)号：US06514850B2
公开(公告)日：2003-02-04
申请号：US09775010
申请日：2001-01-31
申请人： Li-Qun Xia , Huong Thanh Nguyen , Ellie Yieh , Dan Maydan
发明人： Li-Qun Xia , Huong Thanh Nguyen , Ellie Yieh , Dan Maydan
IPC分类号： H01L214763
CPC分类号： H01L21/76829 , H01L21/02115 , H01L21/02126 , H01L21/02167 , H01L21/0217 , H01L21/3105 , H01L21/31116 , H01L21/3144 , H01L21/76801 , H01L21/76807 , H01L21/76826
摘要： Methods of forming an interface in a dielectric material to act as an indicator for terminating an etching process, and products produced thereby.

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式