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51. 发明授权

US5885358A Gas injection slit nozzle for a plasma process reactor 失效
标题翻译：用于等离子体处理反应器的气体注入狭缝喷嘴
公开(公告)号：US5885358A
公开(公告)日：1999-03-23
申请号：US682803
申请日：1996-07-09
申请人： Dan Maydan , Steve S. Y. Mak , Donald Olgado , Gerald Zheyao Yin , Timothy D. Driscoll , James S. Papanu , Avi Tepman
发明人： Dan Maydan , Steve S. Y. Mak , Donald Olgado , Gerald Zheyao Yin , Timothy D. Driscoll , James S. Papanu , Avi Tepman
IPC分类号： C23C16/44 , C23C16/455 , C23C16/50 , H01J37/32 , H01L21/02 , H01L21/205 , H01L21/302 , H01L21/3065 , C23C16/00
CPC分类号： H01J37/321 , C23C16/455 , H01J37/3244
摘要： A gas injection system for injecting gases into a plasma reactor having a vacuum chamber with a sidewall, a pedestal for holding a semiconductor wafer to be processed, and a RF power applicator for applying RF power into the chamber. The gas injection system includes at least one gas supply containing gas, a gas distribution apparatus which has at least one slotted aperture facing the interior of the chamber, and one or more gas feed lines connecting the gas supply or supplies to the gas distribution apparatus. A preferred embodiment of a radial gas distribution apparatus in accordance with the present invention is disposed in the chamber sidewall and includes plural gas distribution nozzles each with a slotted aperture facing an interior of the chamber. Gas feed lines are employed to respectively connect each gas distribution nozzle to separate ones of the gas supplies.
摘要翻译：一种用于将气体注入等离子体反应器的气体注入系统，所述等离子体反应器具有具有侧壁的真空室，用于保持要处理的半导体晶片的基座和用于将RF功率施加到所述室中的RF功率施加器。气体注入系统包括至少一个含气体的气体供给装置，具有面向腔室内部的至少一个开口孔的气体分配装置以及将气体供给或供给部连接到气体分配装置的一个或多个气体供给管线。根据本发明的径向气体分配装置的优选实施例设置在室侧壁中，并且包括多个气体分配喷嘴，每个气体分配喷嘴均具有面向腔室内部的开口孔。采用气体供给管线分别连接每个气体分配喷嘴以分离气体供应源。

52. 发明授权

US5756400A Method and apparatus for cleaning by-products from plasma chamber surfaces 失效
标题翻译：从等离子体室表面清洗副产品的方法和设备
公开(公告)号：US5756400A
公开(公告)日：1998-05-26
申请号：US568064
申请日：1995-12-08
申请人： Yan Ye , Diana Xiaobing Ma , Gerald Zheyao Yin , Keshav Prasad , Mark Siegel , Steve S. Y. Mak , Paul Martinez , James S. Papanu , Danny Chien Lu
发明人： Yan Ye , Diana Xiaobing Ma , Gerald Zheyao Yin , Keshav Prasad , Mark Siegel , Steve S. Y. Mak , Paul Martinez , James S. Papanu , Danny Chien Lu
IPC分类号： C23F4/00 , B08B7/00 , H01L21/205 , H01L21/302 , H01L21/304 , H01L21/3065 , H01L21/00
CPC分类号： B08B7/0042 , Y10S438/905
摘要： The present invention provides an apparatus and process for plasma cleaning the interior surfaces of semiconductor processing chambers. The method is directed to the dry etching of accumulated contaminant residues attached to the inner surfaces of the plasma processing chamber and includes introducing a cleaning gas mixture of a halogen-containing gas; activating a plasma in an environment substantially free of oxygen species; contacting the contaminant residues with the activated cleaning gas to volatilize the residues; and removing the gaseous by-products from the chamber. The etchant gaseous mixture comprises an even or greater amount of at least one fluorine-containing gas and an even or lesser amount of at least one chlorine-containing gas. The instant invention enables the intermittent use of the cleaning steps in an ongoing plasma processing of semiconductor wafers without chamber downtime and significant loss of wafer production.
摘要翻译：本发明提供了一种用于等离子体清洁半导体处理室内表面的装置和方法。该方法涉及连接到等离子体处理室的内表面上的累积污染物残留物的干蚀刻，并且包括引入含卤素气体的清洁气体混合物; 在基本上不含氧物质的环境中激活等离子体; 使污染物残留物与活化的清洁气体接触以挥发残余物; 并从室中除去气态副产物。蚀刻剂气体混合物包含甚至或更多量的至少一种含氟气体和甚至或更少量的至少一种含氯气体。本发明能够在半导体晶片的持续等离子体处理中间歇地使用清洁步骤，而无需室停机和晶片生产的显着损失。

53. 发明授权

US08361835B2 Method for forming transparent conductive oxide 有权
标题翻译：形成透明导电氧化物的方法
公开(公告)号：US08361835B2
公开(公告)日：2013-01-29
申请号：US12748790
申请日：2010-03-29
申请人： Valery V. Komin , Hien-Minh Huu Le , David Tanner , James S. Papanu , Philip A. Greene , Suresh M. Shrauti , Roman Gouk , Steven Verhaverbeke
发明人： Valery V. Komin , Hien-Minh Huu Le , David Tanner , James S. Papanu , Philip A. Greene , Suresh M. Shrauti , Roman Gouk , Steven Verhaverbeke
IPC分类号： H01L21/00
CPC分类号： C23C14/086 , C23C14/541 , C23C14/56 , C23C14/5846 , H01L31/022466 , H01L31/022483 , H01L31/02366 , H01L31/03921 , H01L31/056 , H01L31/075 , H01L31/1884 , Y02E10/52 , Y02E10/548
摘要： Embodiments disclosed herein generally relate to a process of depositing a transparent conductive oxide layer over a substrate. The transparent oxide layer is sometimes deposited onto a substrate for later use in a solar cell device. The transparent conductive oxide layer may be deposited by a “cold” sputtering process. In other words, during the sputtering process, a plasma is ignited in the processing chamber which naturally heats the substrate. No additional heat is provided to the substrate during deposition such as from the susceptor. After the transparent conductive oxide layer is deposited, the substrate may be annealed and etched, in either order, to texture the transparent conductive oxide layer. In order to tailor the shape of the texturing, different wet etch chemistries may be utilized. The different etch chemistries may be used to shape the surface of the transparent conductive oxide and the etch rate.
摘要翻译：本文公开的实施例通常涉及在衬底上沉积透明导电氧化物层的工艺。透明氧化物层有时沉积在衬底上，以供以后用于太阳能电池器件中。可以通过冷溅射工艺沉积透明导电氧化物层。换句话说，在溅射过程中，在处理室中点燃等离子体，其自然地加热基板。在诸如从感受器的沉积期间不会向衬底提供额外的热量。在沉积透明导电氧化物层之后，可以以任何顺序对衬底进行退火和蚀刻，以对透明导电氧化物层进行纹理化。为了调整纹理的形状，可以使用不同的湿蚀刻化学物质。可以使用不同的蚀刻化学物质来形成透明导电氧化物的表面和蚀刻速率。

54. 发明授权

US07914623B2 Post-ion implant cleaning for silicon on insulator substrate preparation 失效
标题翻译：用于硅绝缘体衬底制备的离子后植入物清洁
公开(公告)号：US07914623B2
公开(公告)日：2011-03-29
申请号：US11977701
申请日：2007-10-24
申请人： James S. Papanu , Han-Wen Chen , Brian J. Brown , Steven Verhaverbeke
发明人： James S. Papanu , Han-Wen Chen , Brian J. Brown , Steven Verhaverbeke
IPC分类号： H01L21/461
CPC分类号： H01L21/02057 , Y10S438/906 , Y10S438/907 , Y10S438/908 , Y10S438/928
摘要： A combination of a dry oxidizing, wet etching, and wet cleaning processes are used to remove particle defects from a wafer after ion implantation, as part of a wafer bonding process to fabricate a SOI wafer. The particle defects on the topside and the backside of the wafer are oxidized, in a dry strip chamber, with an energized gas. In a wet clean chamber, the backside of the wafer is treated with an etchant solution to remove completely or partially a thermal silicon oxide layer, followed by exposure of the topside and the backside to a cleaning solution. The cleaning solution contains ammonium hydroxide, hydrogen peroxide, DI water, and optionally a chelating agent, and a surfactant. The wet clean chamber is integrated with the dry strip chamber and contained in a single wafer processing system.
摘要翻译：干法氧化，湿蚀刻和湿法清洗工艺的组合被用于在离子注入之后从晶片去除颗粒缺陷，作为制造SOI晶片的晶片接合工艺的一部分。晶片顶面和背面的颗粒缺陷在干燥条带室中被激发的气体氧化。在湿式清洁室中，用蚀刻剂溶液处理晶片的背面以完全或部分地去除热氧化硅层，随后将顶侧和背面暴露于清洁溶液中。清洗液含有氢氧化铵，过氧化氢，去离子水，任选的螯合剂和表面活性剂。湿式清洁室与干燥条带室一体化，并包含在单个晶片处理系统中。

55. 发明申请

US20100104953A1 PROCESS AND HARDWARE FOR PLASMA TREATMENTS 审中-公开
标题翻译：等离子体处理的工艺和硬件
公开(公告)号：US20100104953A1
公开(公告)日：2010-04-29
申请号：US12258271
申请日：2008-10-24
申请人： James S. Papanu , Roman Gouk , Han-Wen Chen , Phillip Peters
发明人： James S. Papanu , Roman Gouk , Han-Wen Chen , Phillip Peters
IPC分类号： G03F1/00
CPC分类号： G03F7/168 , G03F1/82 , G03F7/427
摘要： A H2O vapor based dry plasma process for pre-treating and strip-cleaning a reticle, a three layer gas distribution plate (GDP) assembly to control the heat load to the reticle during the plasma process, and a modified hole pattern for the GDP that further enhances stripping of resist from the edges of the reticle are disclosed.
摘要翻译：基于H 2 O蒸汽的干法等离子体处理，用于预处理和剥离掩模版，三层气体分配板（GDP）组件，用于控制等离子体工艺期间对掩模版的热负荷，以及改进的孔模式用于GDP，公开了进一步增强抗蚀剂从掩模版的边缘的剥离。

56. 发明申请

US20080166208A1 WET CLEAN SYSTEM DESIGN 失效
标题翻译：湿清洁系统设计
公开(公告)号：US20080166208A1
公开(公告)日：2008-07-10
申请号：US11620610
申请日：2007-01-05
申请人： Paul Lester , Scott Meyer , Wyland L. Atkins , Douglas Richards , Constantin Predoaica , Jeffrey Hudgens , Charles Carlson , Penchala Kankanala , Mike Rice , James S. Papanu , Evanson G. Baiya , John J. Rosato
发明人： Paul Lester , Scott Meyer , Wyland L. Atkins , Douglas Richards , Constantin Predoaica , Jeffrey Hudgens , Charles Carlson , Penchala Kankanala , Mike Rice , James S. Papanu , Evanson G. Baiya , John J. Rosato
IPC分类号： H01L21/67
CPC分类号： H01L21/67766 , H01L21/67051 , H01L21/68707 , Y10S134/902
摘要： The present invention generally provides an apparatus and method for processing and transferring substrates in a multi-chamber processing system that has the capability of receiving and performing single substrate processing steps performed in parallel, while using the many favorable aspects of batch processing. Embodiments of the invention described herein are adapted to maximize system throughput, reduce system cost, reduce cost per substrate during processing, increase system reliability, improve the device yield on the processed substrates, and reduce system footprint. In one embodiment, the cluster tool is adapted to perform a wet/clean process sequence in which various substrate cleaning processes are performed on a substrate in the cluster tool.
摘要翻译：本发明通常提供了一种在多室处理系统中处理和传送基板的装置和方法，该多室处理系统具有在使用批处理的许多有利方面的同时并行执行的单个基板处理步骤的能力。本文描述的本发明的实施例适用于最大化系统吞吐量，降低系统成本，在处理期间降低每个基板的成本，增加系统可靠性，提高处理的基板上的装置产量，并减少系统占用面积。在一个实施例中，群集工具适于执行湿/清洁处理序列，其中在群集工具中的基板上执行各种基板清洁处理。

57. 发明授权

US06991739B2 Method of photoresist removal in the presence of a dielectric layer having a low k-value 有权
公开(公告)号：US06991739B2
公开(公告)日：2006-01-31
申请号：US09978121
申请日：2001-10-15
申请人： Mark N. Kawaguchi , Huong T. Nguyen , Nikolaos Bekiaris , James S. Papanu
发明人： Mark N. Kawaguchi , Huong T. Nguyen , Nikolaos Bekiaris , James S. Papanu
IPC分类号： H01L21/00
CPC分类号： H01L21/02063 , G03F7/427 , H01L21/31138
摘要： A method of photoresist removal is described. A substrate is located in a processing chamber. A mixture of gases is excited, the mixture comprising a majority component of a reducing process gas and a minority component of between 0.1% and 10% by volume of an oxidizing process gas. Reactive gas species are thereby generated. A photoresist layer with an exposed dielectric layer on the substrate in the chamber is then exposed to the reactive gas mixture to selectively remove the photoresist layer from the dielectric layer.

58. 发明授权

US5746875A Gas injection slit nozzle for a plasma process reactor 失效
标题翻译：用于等离子体处理反应器的气体注入狭缝喷嘴
公开(公告)号：US5746875A
公开(公告)日：1998-05-05
申请号：US551881
申请日：1995-10-16
申请人： Dan Maydan , Steve S. Y. Mak , Donald Olgado , Gerald Zheyao Yin , Timothy D. Driscoll , James S. Papanu , Avi Tepman
发明人： Dan Maydan , Steve S. Y. Mak , Donald Olgado , Gerald Zheyao Yin , Timothy D. Driscoll , James S. Papanu , Avi Tepman
IPC分类号： H05H1/46 , C23C16/44 , C23C16/455 , C23F4/00 , H01J37/32 , H01L21/302 , H01L21/3065 , H05H1/42 , H05H1/00
CPC分类号： C23C16/45574 , C23C16/45576 , C23C16/45587 , H01J37/3244 , H01J37/32449
摘要： The invention is embodied in a gas injection apparatus for injecting gases into a plasma reactor vacuum chamber having a chamber housing, a pedestal holding a workpiece to be processed, a device for applying RF energy into the chamber, the gas injection apparatus having a gas supply containing an etchant species in a gas, an opening in the chamber housing, a gas distribution apparatus disposed within the opening in the chamber housing which has at least one slotted aperture facing the interior of the chamber and a device for controlling the flow rate of gas from the one or more slotted apertures, and a gas feed line from the supply to the gas distribution apparatus. In a preferred embodiment, the gas distribution apparatus includes a center member surrounded by at least one annular member with a gap therebetween comprising the slotted aperture. Preferably, each of the members of the gas distribution apparatus comprises a material at least nearly impervious to attack from the etchant species. In one example, each of the members of the gas distribution apparatus comprises one of a ceramic, fused quartz, polymeric or anodized aluminum material and the gas feed line comprises stainless steel. Preferably, each of the members has its surface polished prior to assembly of the gas distribution apparatus.
摘要翻译：本发明体现在一种用于将气体注入等离子体反应器真空室中的气体注入装置，其具有腔室壳体，保持要加工的工件的基座，用于将RF能量施加到腔室中的装置，该气体注入装置具有气体供应在气体中含有蚀刻剂物质，在腔室中的开口，设置在腔室中的开口内的气体分配装置，其具有面向腔室内部的至少一个开口孔，以及用于控制气体流速的装置从一个或多个开槽孔，以及从供给到气体分配装置的气体供给管线。在优选实施例中，气体分配装置包括由至少一个环形构件包围的中心构件，其间具有间隙，包括开槽孔。优选地，气体分配装置的每个构件包括至少几乎不受蚀刻剂物质侵蚀的材料。在一个示例中，气体分配装置的每个构件包括陶瓷，熔融石英，聚合物或阳极氧化铝材料中的一种，气体供给管线包括不锈钢。优选地，每个构件在气体分配装置的组装之前具有其表面抛光。

59. 发明授权

US5545289A Passivating, stripping and corrosion inhibition of semiconductor substrates 失效
标题翻译：半导体衬底的钝化，剥离和腐蚀抑制
公开(公告)号：US5545289A
公开(公告)日：1996-08-13
申请号：US268377
申请日：1994-06-29
申请人： Jian Chen , James S. Papanu , Steve S. Y. Mak , Carmel Ish-Shalom , Peter Hsieh , Wesley G. Lau , Charles S. Rhoades , Brian Shieh , Ian S. Latchford , Karen A. Williams , Victoria Yu-Wang
发明人： Jian Chen , James S. Papanu , Steve S. Y. Mak , Carmel Ish-Shalom , Peter Hsieh , Wesley G. Lau , Charles S. Rhoades , Brian Shieh , Ian S. Latchford , Karen A. Williams , Victoria Yu-Wang
IPC分类号： H01L21/02 , H01L21/311 , H01L21/3213 , H01L21/00
CPC分类号： H01L21/02071 , H01L21/31138 , Y10S438/958
摘要： A process for passivating, and optionally stripping and inhibiting corrosion of an etched substrate (20), is described. In the process, a substrate (20) having etchant byproducts (24) thereon, is placed into a vacuum chamber (52), and passivated in a multicycle passivation process comprising at least two passivating steps. In each passivating step, passivating gas is introduced into the vacuum chamber (52) and a plasma is generated from the passivating gas. When the substrate also has remnant resist (26) thereon, the resist (26) is stripped in a multicycle passivation and stripping process, each cycle including a passivating step and a stripping step. The stripping step is performed by introducing a stripping gas into the vacuum chamber (52) and generating a plasma from the stripping gas. In the multicycle process, the passivating and optional stripping steps, are repeated at least once in the same order that the steps were done. Alternatively, the substrate (20) can also be passivated in a single cycle process using a passivating gas comprising water vapor, oxygen, and nitrogen. Optionally, corrosion of the substrate is further inhibited by introducing an amine vapor into the vacuum chamber (52) so that amine adsorps onto the substrate (20), forming a corrosion inhibition amine layer on the surface of the substrate (20).
摘要翻译：描述了钝化和任选地剥离和抑制腐蚀的衬底（20）的腐蚀的方法。在该方法中，将具有蚀刻剂副产物（24）的衬底（20）放置在真空室（52）中，并且在包括至少两个钝化步骤的多圈钝化工艺中钝化。在每个钝化步骤中，将钝化气体引入真空室（52）中，并从钝化气体产生等离子体。当衬底上还具有残余抗蚀剂（26）时，抗蚀剂（26）在多周期钝化和剥离过程中被剥离，每个循环包括钝化步骤和剥离步骤。通过将汽提气体引入真空室（52）并从汽提气体产生等离子体来进行汽提步骤。在多周期过程中，钝化和可选的剥离步骤以与步骤相同的顺序重复至少一次。或者，也可以使用包括水蒸气，氧气和氮气的钝化气体在单周期过程中钝化基板（20）。任选地，通过将胺蒸气引入真空室（52）进一步抑制基板的腐蚀，使得胺吸附到基板（20）上，在基板（20）的表面上形成腐蚀抑制胺层。

60. 发明申请

US20100311228A1 METHOD FOR FORMING TRANSPARENT CONDUCTIVE OXIDE 失效
公开(公告)号：US20100311228A1
公开(公告)日：2010-12-09
申请号：US12748780
申请日：2010-03-29
申请人： VALERY V. KOMIN , Hien-Minh Huu Le , David Tanner , James S. Papanu , Philip A. Greene , Suresh M. Shrauti , Roman Gouk , Steven Verhaverbeke
发明人： VALERY V. KOMIN , Hien-Minh Huu Le , David Tanner , James S. Papanu , Philip A. Greene , Suresh M. Shrauti , Roman Gouk , Steven Verhaverbeke
IPC分类号： H01L21/3213 , H01L21/20
CPC分类号： C23C14/086 , C23C14/5806 , C23C14/5873 , H01L31/022466 , H01L31/0236 , H01L31/02366 , H01L31/03682 , H01L31/03685 , H01L31/03762 , H01L31/03921 , H01L31/056 , H01L31/075 , H01L31/077 , H01L31/1864 , H01L31/1884 , Y02E10/52 , Y02E10/545 , Y02E10/546 , Y02E10/548 , Y02P70/521
摘要： Embodiments disclosed herein generally relate to a process of depositing a transparent conductive oxide layer over a substrate. The transparent oxide layer is sometimes deposited onto a substrate for later use in a solar cell device. The transparent conductive oxide layer may be deposited by a “cold” sputtering process. In other words, during the sputtering process, a plasma is ignited in the processing chamber which naturally heats the substrate. No additional heat is provided to the substrate during deposition such as from the susceptor. After the transparent conductive oxide layer is deposited, the substrate may be annealed and etched, in either order, to texture the transparent conductive oxide layer. In order to tailor the shape of the texturing, different wet etch chemistries may be utilized. The different etch chemistries may be used to shape the surface of the transparent conductive oxide and the etch rate.

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