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    • 4. 发明授权
    • Process and system for rinsing of semiconductor substrates
    • 用于冲洗半导体衬底的工艺和系统
    • US06878213B1
    • 2005-04-12
    • US09408279
    • 1999-09-29
    • John J. RosatoJane FahrenkrugCurtis R. OlsonPaul G. Lindquist
    • John J. RosatoJane FahrenkrugCurtis R. OlsonPaul G. Lindquist
    • H01L21/00H01L21/306C23G1/02
    • H01L21/67028H01L21/02063Y10S438/906
    • Semiconductor substrates, particularly metallized substrates such as partially processed wafers, are rinsed with an aqueous medium, preferably deionized water, which further contains an anti-corrosive chemical agent or agents selected so as to minimize corrosion of metals resulting from contact with the water. The amount of anti-corrosive chemical agent is maintained in a controlled manner at a predetermined level or within a predetermined range preferably the rinsing with aqueous medium containing anticorrosive chemical agent is also carried out for a specified time, followed by further rinsing with deionized water alone. The rinsing may be combined, either in the same vessel or in a different vessel, with a subsequent drying step, such as a drying process utilizing a drying vapor introduced into the rinse tank or into a downstream vessel. The drying vapor condenses on the surface of the semiconductor material and reduces the surface tension of residual process fluid, causing the residual process fluid to flow off the surface.
    • 半导体衬底,特别是金属化衬底(例如部分处理的晶片)用水性介质,优选去离子水冲洗,其中还含有防腐蚀化学试剂或选择的试剂,以便最小化与由水接触而导致的金属腐蚀。 防腐蚀化学试剂的量以受控方式保持在预定水平或预定范围内,优选用含有防锈化学试剂的含水介质进行漂洗特定时间,然后用去离子水单独进一步冲洗 。 冲洗可以在相同的容器中或在不同的容器中组合,随后的干燥步骤,例如使用引入到漂洗槽中的干燥蒸气或下游容器的干燥方法。 干燥蒸汽在半导体材料的表面上冷凝并降低残余工艺流体的表面张力,导致残留的工艺流体流出表面。