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51. 发明申请

US20110073257A1 UNITIZED CONFINEMENT RING ARRANGEMENTS AND METHODS THEREOF 审中-公开
标题翻译： UNITIZED CONFINEMENT RING ARRANGEM AND METHODS WITHFORE
公开(公告)号：US20110073257A1
公开(公告)日：2011-03-31
申请号：US12890990
申请日：2010-09-27
申请人： Rajinder Dhindsa , Rajaramanan Kalyanaraman , Sathyanarayanan Mani , Gautam Bhattacharyya
发明人： Rajinder Dhindsa , Rajaramanan Kalyanaraman , Sathyanarayanan Mani , Gautam Bhattacharyya
IPC分类号： C23F1/08
CPC分类号： H01J37/32449 , H01J37/32091 , H01J37/32477 , H01J37/32495 , H01J37/32532 , H01J37/32623 , H01J37/32642 , H01J37/32816 , H01J37/32834 , H01J2237/334
摘要： An arrangement for performing pressure control in a plasma processing chamber comprising an upper electrode, a lower electrode, a unitized confinement ring arrangement wherein the upper electrode, the lower electrode and the unitized confinement ring arrangement are configured at least for surrounding a confined chamber region to facilitate plasma generation and confinement therein. The arrangement further includes at least one plunger configured for moving the unitized confinement ring arrangement in a vertical direction to adjust at least one of a first gas conductance path and a second gas conductance path to perform the pressure control, wherein the first gas conductance path is formed between the upper electrode and the unitized confinement ring arrangement and the second gas conductance path is formed between the lower electrode and the single unitized ring arrangement.
摘要翻译：一种用于在等离子体处理室中执行压力控制的装置，包括上电极，下电极，单位化约束环装置，其中上电极，下电极和单位化约束环装置至少构成为围绕限制室区域促进等离子体产生和限制。所述装置还包括至少一个柱塞，所述至少一个柱塞构造成用于沿垂直方向移动所述单位化限制环装置，以调节第一气体传导路径和第二气体导电路径中的至少一个，以执行所述压力控制，其中所述第一气体导电路径形成在上部电极和单元化的限制环装置之间，并且第二气体导电路径形成在下部电极和单个组合环形装置之间。

52. 发明申请

US20110070743A1 APPARATUS AND METHODS FOR EDGE RING IMPLEMENTATION FOR SUBSTRATE PROCESSING 有权
标题翻译：用于基板加工的边缘实施的装置和方法
公开(公告)号：US20110070743A1
公开(公告)日：2011-03-24
申请号：US12951886
申请日：2010-11-22
申请人： Rajinder Dhindsa , Alexei Marakhtanov
发明人： Rajinder Dhindsa , Alexei Marakhtanov
IPC分类号： H01L21/3065
CPC分类号： H01L21/6732 , H01J37/32091 , H01J37/32623 , H01J37/32642 , Y10S156/915
摘要： A method for processing a substrate in a plasma processing chamber is provided. The substrate is disposed above a chuck and surrounded by a first edge ring. The first edge ring is electrically isolated from the chuck. The method includes providing a second edge ring. The second edge ring is disposed below an edge of the substrate. The method also includes providing a coupling ring. The coupling ring is configured to facilitate RF coupling from an ESC (electrostatic chuck) assembly to the first edge ring, thereby causing the first edge ring to have an edge ring potential during substrate processing and causing the RF coupling to be maximized at the first edge ring and minimized at the second edge ring during the substrate processing. The method also includes providing an insulator ring, wherein the second edge ring is disposed above the insulator ring.
摘要翻译：提供了一种在等离子体处理室中处理衬底的方法。衬底设置在卡盘上方并被第一边缘环包围。第一边缘环与卡盘电隔离。该方法包括提供第二边缘环。第二边缘环设置在基板的边缘下方。该方法还包括提供耦合环。联接环被配置为便于从ESC（静电卡盘）组件到第一边缘环的RF耦合，从而使得第一边缘环在衬底处理期间具有边缘环电位，并且使RF耦合在第一边缘处被最大化在基板处理期间在第二边缘环处环形并最小化。该方法还包括提供绝缘体环，其中第二边缘环设置在绝缘体环上方。

53. 发明申请

US20110059615A1 HYBRID RF CAPACITIVELY AND INDUCTIVELY COUPLED PLASMA SOURCE USING MULTIFREQUENCY RF POWERS AND METHODS OF USE THEREOF 有权
标题翻译：混合射频功率和电感耦合等离子体源使用多频RF功率及其使用方法
公开(公告)号：US20110059615A1
公开(公告)日：2011-03-10
申请号：US12945314
申请日：2010-11-12
申请人： Alexei Marakhtanov , Rajinder Dhindsa , Eric Hudson , Andreas Fischer
发明人： Alexei Marakhtanov , Rajinder Dhindsa , Eric Hudson , Andreas Fischer
IPC分类号： H01L21/3065
CPC分类号： H01J37/321 , H01J37/32091 , H01J2237/03
摘要： A device for inductively confining capacitively coupled RF plasma formed in a plasma processing apparatus. The apparatus includes an upper electrode and a lower electrode that is adapted to support a substrate and to generate the plasma between the substrate and the upper electrode. The device includes a dielectric support ring that concentrically surrounds the upper electrode and a plurality of coil units mounted on the dielectric support ring. Each coil unit includes a ferromagnetic core positioned along a radial direction of the dielectric support ring and at least one coil wound around each ferromagnetic core. The coil units generate, upon receiving RF power from an RF power source, electric and magnetic fields that reduce the number of charged particles of the plasma diffusing away from the plasma.
摘要翻译：用于感应地限制在等离子体处理装置中形成的电容耦合RF等离子体等离子体的装置。该装置包括上电极和下电极，其适于支撑衬底并在衬底和上电极之间产生等离子体。该装置包括同心地围绕上电极的电介质支撑环和安装在电介质支撑环上的多个线圈单元。每个线圈单元包括沿着电介质支撑环的径向定位的铁磁芯和缠绕在每个铁磁芯周围的至少一个线圈。线圈单元在从RF电源接收到RF功率时产生电场和磁场，其减少等离子体的带电粒子的数量远离等离子体扩散。

54. 发明申请

US20110024046A1 Apparatus and Method for Controlling Plasma Potential 审中-公开
标题翻译：用于控制等离子体电位的装置和方法
公开(公告)号：US20110024046A1
公开(公告)日：2011-02-03
申请号：US12905046
申请日：2010-10-14
申请人： Douglas Keil , Lumin Li , Reza Sadjadi , Eric Hudson , Eric Lenz , Rajinder Dhindsa
发明人： Douglas Keil , Lumin Li , Reza Sadjadi , Eric Hudson , Eric Lenz , Rajinder Dhindsa
IPC分类号： H01L21/306
CPC分类号： H01J37/32183 , H01J37/32091 , H01J37/32174 , H01J37/32532
摘要： An apparatus is provided for semiconductor wafer plasma processing. The apparatus includes a chamber having a lower electrode and an upper electrode disposed therein. The lower electrode is defined to transmit a radiofrequency current through the chamber to generate a plasma within the chamber. The lower electrode is also defined to support a semiconductor wafer in exposure to the plasma. The upper electrode is disposed above and in a spaced apart relationship with the lower electrode. The upper electrode is defined by a doped semiconductor material. A doping concentration within the upper electrode varies radially from a center to a periphery of the upper electrode. The electric potential of the upper electrode influences an electric potential of the plasma within the chamber.
摘要翻译：提供了一种用于半导体晶片等离子体处理的装置。该装置包括具有下电极和设置在其中的上电极的腔室。下电极被定义为传输射频电流通过腔室以在腔室内产生等离子体。下电极也被限定为支持暴露于等离子体的半导体晶片。上电极设置在下电极的上方并与之隔开的关系。上电极由掺杂的半导体材料限定。上电极内的掺杂浓度从上电极的中心向周边径向变化。上电极的电位影响室内等离子体的电位。

55. 发明申请

US20100124822A1 APPARATUSES FOR ADJUSTING ELECTRODE GAP IN CAPACITIVELY-COUPLED RF PLASMA REACTOR 有权
标题翻译：用于调节电容耦合RF等离子体反应器中电极隙的装置
公开(公告)号：US20100124822A1
公开(公告)日：2010-05-20
申请号：US12693066
申请日：2010-01-25
申请人： Rajinder Dhindsa , Eric H. Lenz , Andy W. DeSepte , Lumin Li
发明人： Rajinder Dhindsa , Eric H. Lenz , Andy W. DeSepte , Lumin Li
IPC分类号： H01L21/3065 , C23F1/00 , C23C16/00 , B05C13/00
CPC分类号： H01J37/32568 , H01J37/32091
摘要： A plasma processing chamber includes a cantilever assembly configured to neutralize atmospheric load. The chamber includes a wall surrounding an interior region and having an opening formed therein. A cantilever assembly includes a substrate support for supporting a substrate within the chamber. The cantilever assembly extends through the opening such that a portion is located outside the chamber. The chamber includes an actuation mechanism operative to move the cantilever assembly relative to the wall.
摘要翻译：等离子体处理室包括构造成中和大气负荷的悬臂组件。该室包括围绕内部区域并具有形成在其中的开口的壁。悬臂组件包括用于支撑腔室内的衬底的衬底支撑件。悬臂组件延伸穿过开口，使得一部分位于室外。所述腔室包括致动机构，其可操作以相对于所述壁移动所述悬臂组件。

56. 发明申请

US20090204342A1 METHODS AND APPARATUS FOR WAFER AREA PRESSURE CONTROL IN AN ADJUSTABLE GAP PLASMA CHAMBER 有权
标题翻译：可调节气隙等离子体室中的压力区域压力控制的方法和装置
公开(公告)号：US20090204342A1
公开(公告)日：2009-08-13
申请号：US12367443
申请日：2009-02-06
申请人： Rajinder Dhindsa , James H. Rogers
发明人： Rajinder Dhindsa , James H. Rogers
IPC分类号： G01N33/00 , H01L21/3065 , G01L7/00
CPC分类号： H01J37/32642 , H01J37/32449 , H01J37/32623
摘要： In a plasma processing chamber, a method and an arrangement to stabilize pressure are provided. The method includes providing coarse pressure adjustments in an open-loop manner and thereafter providing fine pressure adjustments in a closed-loop manner. The coarse pressure adjustments are performed by rapidly re-position confinement rings employing an assumed linear relationship between the conductance and the confinement rings position to bring the pressure in the plasma generating region quickly to roughly a desired set point. The fine pressure adjustments are performed by at least employing mechanical vacuum pump(s), turbo pump(s), confinement ring positioning and/or combinations thereof to achieve a derive pressure set point.
摘要翻译：在等离子体处理室中，提供了稳定压力的方法和装置。该方法包括以开环方式提供粗调压，然后以闭环方式提供精细的压力调节。通过使用假定的电导和限制环位置之间的线性关系快速重新定位限制环来使等离子体产生区域中的压力快速地达到大致期望的设定点来执行粗调压力调节。通过至少采用机械真空泵，涡轮泵，限制环定位和/或其组合来实现精细压力调节以实现导出压力设定点。

57. 发明申请

US20090090695A1 Yttria insulator ring for use inside a plasma chamber 审中-公开
标题翻译：用于等离子体室内的氧化钇绝缘体环
公开(公告)号：US20090090695A1
公开(公告)日：2009-04-09
申请号：US12230404
申请日：2008-08-28
申请人： Babak Kadkhodayan , Rajinder Dhindsa , Yuehong Fu
发明人： Babak Kadkhodayan , Rajinder Dhindsa , Yuehong Fu
IPC分类号： H01L21/3065 , B23P19/00
CPC分类号： C04B35/505 , C04B2235/725 , C04B2235/728 , C04B2235/77 , C04B2235/9692 , H01J37/32642 , H01J2237/0206 , Y10T29/4973
摘要： A yttria insulator ring for use in a plasma processing apparatus is provided to minimize arcing between the apparatus and a ground extension, while also increasing a mean time between cleanings (MTBC). The yttria insulator ring may be located between a ground extension and a plasma generation zone, or gap, of the chamber of the apparatus, as well as between an edge ring and the ground extension. Compared to a quartz ring, the yttria insulator ring can also provide improved semiconductor substrate uniformity because of improved RF coupling as a result of decreased reactivity and increased dielectric constant.
摘要翻译：提供用于等离子体处理装置的氧化钇绝缘体环，以最小化装置和地面延伸部之间的电弧，同时也增加清洗之间的平均时间（MTBC）。氧化钇绝缘体环可以位于设备的室的接地延伸部和等离子体产生区域或间隙之间，以及边缘环和接地延伸部之间。与石英环相比，氧化钇绝缘体环也可以提供改善的半导体衬底均匀性，因为由于反应性降低和介电常数增加导致RF耦合改善。

58. 发明申请

US20080171444A1 Apparatuses for adjusting electrode gap in capacitively-coupled RF plasma reactor 有权
标题翻译：用于调整电容耦合射频等离子体反应器中电极间隙的装置
公开(公告)号：US20080171444A1
公开(公告)日：2008-07-17
申请号：US11653869
申请日：2007-01-17
申请人： Rajinder Dhindsa , Eric H. Lenz , Andy W. DeSepte , Lumin Li
发明人： Rajinder Dhindsa , Eric H. Lenz , Andy W. DeSepte , Lumin Li
IPC分类号： H01L21/3065
CPC分类号： H01J37/32568 , H01J37/32091
摘要： A plasma processing chamber includes a cantilever assembly configured to neutralize atmospheric load. The chamber includes a wall surrounding an interior region and having an opening formed therein. A cantilever assembly includes a substrate support for supporting a substrate within the chamber. The cantilever assembly extends through the opening such that a portion is located outside the chamber. The chamber includes an actuation mechanism operative to move the cantilever assembly relative to the wall.
摘要翻译：等离子体处理室包括构造成中和大气负荷的悬臂组件。该室包括围绕内部区域并具有形成在其中的开口的壁。悬臂组件包括用于支撑腔室内的衬底的衬底支撑件。悬臂组件延伸穿过开口，使得一部分位于室外。所述腔室包括致动机构，其可操作以相对于所述壁移动所述悬臂组件。

59. 发明授权

US07393432B2 RF ground switch for plasma processing system 有权
标题翻译：射频接地开关等离子体处理系统
公开(公告)号：US07393432B2
公开(公告)日：2008-07-01
申请号：US10953229
申请日：2004-09-29
申请人： Rajinder Dhindsa , Felix Kozakevich , Eric Lenz , Russell Martin
发明人： Rajinder Dhindsa , Felix Kozakevich , Eric Lenz , Russell Martin
IPC分类号： C23F1/00 , H01L21/306 , C23C16/00
CPC分类号： H05H1/46 , H01J37/32091 , H01J37/32174 , H01J37/32568
摘要： An arrangement in a plasma processing system for selectively providing an RF grounding path between an electrode and ground. The arrangement includes an RF conduction path structure and an annular structure. The annular structure and the RF conduction path structure having two relative positions relative to one another. A first relative position of the two relative positions is characterized by the annular structure electrically coupling with the RF conduction path structure to provide a ground to the RF conduction path structure. A second relative position of the two relative positions is characterized by the annular structure being electrically uncoupled from the RF conduction path.
摘要翻译：等离子体处理系统中的布置，用于选择性地提供电极和地面之间的RF接地路径。该装置包括RF传导路径结构和环形结构。环形结构和RF传导路径结构具有相对于彼此的两个相对位置。两个相对位置的第一相对位置的特征在于环形结构与RF传导路径结构电耦合以提供到RF传导路径结构的接地。两个相对位置的第二相对位置的特征在于环形结构与RF传导路径电耦合。

60. 发明申请

US20080149596A1 Methods and apparatuses for controlling gas flow conductance in a capacitively-coupled plasma processing chamber 有权
标题翻译：用于控制电容耦合等离子体处理室中的气体流动电导的方法和装置
公开(公告)号：US20080149596A1
公开(公告)日：2008-06-26
申请号：US11641670
申请日：2006-12-20
申请人： Rajinder Dhindsa , Jerrel K. Antolik , Scott Stevenot
发明人： Rajinder Dhindsa , Jerrel K. Antolik , Scott Stevenot
IPC分类号： C23F1/00 , C23C16/513 , C23F1/08 , B05C11/00
CPC分类号： C23C16/455 , C23C16/4417 , C23C16/45517 , C23C16/45536 , C23C16/45587 , C23C16/45591 , C23C16/52 , H01J37/3244 , H01J37/32449 , H01J37/32623 , H01J37/32633 , H01J37/32642 , H01J37/32816 , H01J37/32834 , H01J37/3299 , H01L21/3065
摘要： Apparatuses are provided for controlling flow conductance of plasma formed in a plasma processing apparatus that includes an upper electrode opposite a lower electrode to form a gap therebetween. The lower electrode is adapted to support a substrate and coupled to a RF power supply. Process gas injected into the gap is excited into the plasma state during operation. The apparatus includes a ground ring that concentrically surrounds the lower electrode and has a set of slots formed therein, and a mechanism for controlling gas flow through the slots.
摘要翻译：提供了用于控制在等离子体处理装置中形成的等离子体的流动电导的装置，其包括与下电极相对的上电极，以在其间形成间隙。下电极适于支撑衬底并耦合到RF电源。注入到间隙中的过程气体在操作期间被激发成等离子体状态。该装置包括同心地围绕下电极并具有形成在其中的一组槽的接地环，以及用于控制通过槽的气流的机构。

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