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    • 52. 发明授权
    • High-strength porous silicon nitride body and process for producing the
same
    • 高强度多孔氮化硅体及其制造方法
    • US5780374A
    • 1998-07-14
    • US774612
    • 1996-12-30
    • Chihiro KawaiTakahiro MatsuuraAkira Yamakawa
    • Chihiro KawaiTakahiro MatsuuraAkira Yamakawa
    • C04B35/584C04B38/00C04B38/06
    • C04B38/00C04B38/06
    • A high-porosity and high-strength porous silicon nitride body comprises columnar silicon nitride grains and an oxide bond phase containing 2 to 15 wt. %, in terms of oxide based on silicon nitride, of at least one rare earth element, and has an SiO.sub.2 /(SiO.sub.2 +rare earth element oxide) weight ratio of 0.012 to 0.65 and an average pore size of at most 3.5 .mu.m. The porous silicon nitride body is produced by compacting comprising a silicon nitride powder, 2 to 15 wt. %, in terms of oxide based on silicon nitride, of at least one rare earth element, and an organic binder while controlling the oxygen content and carbon content of said compact; and sintering said compact in an atmosphere comprising nitrogen at 1,650.degree. to 2,200.degree. C. to obtain a porous body having a three-dimensionally entangled structure made up of columnar silicon nitride grains and an oxide bond phase, and having an SiO.sub.2 /(SiO.sub.2 +rare earth element oxide) weight ratio of 0.012 to 0.65.
    • 高孔隙率和高强度多孔氮化硅体包括柱状氮化硅颗粒和含有2至15wt。 至少一种稀土元素为基于氮化硅的氧化物的%,SiO 2 /(SiO 2 +稀土元素氧化物)的重量比为0.012〜0.65,平均孔径为3.5μm以下。 多孔氮化硅体通过压制而制成,其包含氮化硅粉末,2〜15重量% %,基于氮化硅的氧化物,至少一种稀土元素和有机粘合剂,同时控制所述成型体的氧含量和碳含量; 并在包含氮气的气氛中在1650℃-2200℃下烧结所述成型体,得到由柱状氮化硅晶粒和氧化物结合相构成的三维缠结结构的多孔体,并具有SiO 2 /(SiO 2 + 稀土元素氧化物)重量比为0.012〜0.65。
    • 53. 发明授权
    • Aluminum nitride sintered body and method of producing the same
    • 氮化铝烧结体及其制造方法
    • US5482905A
    • 1996-01-09
    • US178642
    • 1994-01-05
    • Seiji NakahataTakahiro MatsuuraKouichi SogabeAkira Yamakawa
    • Seiji NakahataTakahiro MatsuuraKouichi SogabeAkira Yamakawa
    • C04B35/581C04B35/58
    • C04B35/581
    • An aluminum nitride sintered body comprising aluminum nitride crystals belonging to a Wurtzite hexagonal crystal system wherein the 3 axes a, b and c of the unit lattice of the crystal are defined such that the ratio b/a of the lengths of the axes b and a is 1.000 near the center of the crystal grain and lies within the range 0.997-1.003 in the vicinity of the grain boundary phase. Aluminum nitride sintered body is produced by sintering a molded body of a raw material powder having aluminum and nitrogen as its principal components at a temperature of 1700.degree.-1900.degree. C. in a non-oxidizing atmosphere having a partial pressure of carbon monoxide or carbon of not more than 200 ppm and then cooling the sintered body to 1500.degree. C. or a lower temperature at a rate of 5.degree. C./min or less. The aluminum nitride sintered body has a greatly improved thermal conductivity and, therefore, is suitable for heat slingers, substrates or the like for semiconductor devices.
    • 一种氮化铝烧结体,其包含属于纤锌矿六方晶系的氮化铝晶体,其中晶体的单位晶格的3轴a,b和c被定义为使得轴b和a的长度的比率b / a 在晶粒中心附近为1.000,位于晶界相附近的0.997-1.003范围内。 氮化铝烧结体通过在具有一氧化碳或碳分压的非氧化性气氛中,在1700〜1900℃的温度下烧结以铝和氮为主要成分的原料粉末的成型体 不超过200ppm,然后以5℃/分钟以下的速度将烧结体冷却至1500℃或更低温度。 氮化铝烧结体具有大大提高的导热性,因此适用于半导体器件的热引脚,基板等。
    • 55. 发明授权
    • Silicon nitride sintered body and process for producing the same
    • 氮化硅烧结体及其制造方法
    • US5369065A
    • 1994-11-29
    • US118023
    • 1993-09-08
    • Masashi YoshimuraJin-Joo MatsuiTakehisa YamamotoAkira Yamakawa
    • Masashi YoshimuraJin-Joo MatsuiTakehisa YamamotoAkira Yamakawa
    • C04B35/584C04B35/593C04B35/58
    • C04B35/5935
    • A silicon sintered body comprising a matrix phase consisting of silicon nitride and a grain boundary phase in which the silicon nitride consists of 66 to 99% by volume of .beta.-Si.sub.3 N.sub.4 and/or .beta.'-sialon with the balance being .alpha.-Si.sub.3 N.sub.4 and/or .alpha.'-sialon, the .beta.-Si.sub.3 N.sub.4 and/or .beta.'-sialon consisting of hexagonal rod-like grains having a diameter of 500 nm or less in the minor axis and an aspect ratio 5 to 25, the .alpha.-Si.sub.3 N.sub.4 and/or .alpha.'-sialon consisting of equi-axed grains having an average diameter of 300 nm or less, and titanium compounds are contained within the grains of the matrix phase and in the grain boundary phase. The sintered body is produced by mixing (1) 100 parts by weight of .alpha.-Si.sub.3 N.sub.4 powder, (2) 0.1 to 10 parts by weight of titanium oxide having an average particle size of 100 nm or less and (3) 2 to 15 parts by weight, in total, of specified sintering aids; molding the resultant powder mixture into a green compact; subjecting the green compact to primary sintering and secondary sintering under the prescribed conditions.
    • 一种硅烧结体,包括由氮化硅和晶界相组成的基质相,其中氮化硅由66-99体积%的β-Si 3 N 4和/或β' - 赛隆组成,余量为α-Si 3 N 4和/ 或α' - 塞隆,β-Si 3 N 4和/或β'-Sialon由短轴具有500nm或更小直径的六角棒状晶粒和5至25的长宽比组成,α-Si 3 N 4和/ 或由平均直径为300nm以下的等轴晶粒组成的α'-Sialon,并且钛化合物包含在基质相的晶粒内和晶界相中。 烧结体通过混合(1)100重量份的α-Si 3 N 4粉末,(2)0.1〜10重量份的平均粒径为100nm以下的氧化钛和(3)2〜15重量份 总共为指定的烧结助剂; 将所得粉末混合物成型为生坯; 在规定的条件下对生坯进行一次烧结和二次烧结。
    • 56. 发明授权
    • Method of machining silicon nitride ceramics and silicon nitride
ceramics products
    • 氮化硅陶瓷和氮化硅陶瓷制品的加工方法
    • US5297365A
    • 1994-03-29
    • US921255
    • 1992-07-29
    • Takao NishiokaKenji MatsunumaAkira Yamakawa
    • Takao NishiokaKenji MatsunumaAkira Yamakawa
    • B24B1/00B24B7/22B24B19/22B24D3/00C04B35/584
    • B24B19/22B24B1/00
    • An industrially feasible method of grinding silicon nitride ceramics, is disclosed and provides a sufficiently smooth surface. Namely, the surface has a maximum height-roughness Rmax of 0.1 microns or less and a ten-point mean roughness Rz of 0.05 microns. Further, with this method, surface damage can be repaired while grinding. The vertical cutting feed rate of a grinding wheel into a workpiece should be within the range of 0.005-0.1 micron for each rotation of the working surface of the wheel and change linearly or stepwise. The cutting speed of the grinding wheel in a horizontal (rotational) direction should be within the range of 25 to 75 m/sec. With this arrangement, the contact pressure and grinding heat that is generated between the workpiece and the hard abrasive grains during grinding are combined. In other words, mechanical and thermal actions are combined.
    • 公开了一种工业上可行的研磨氮化硅陶瓷的方法,并提供了足够光滑的表面。 即,表面的最大高度粗糙度Rmax为0.1微米以下,十点平均粗糙度Rz为0.05微米。 此外,通过该方法,可以在磨削时修复表面损伤。 砂轮进入工件的垂直切削进给速率应在车轮工作表面的每次旋转时在0.005-0.1微米的范围内,并且线性或逐步改变。 砂轮在水平(旋转)方向上的切割速度应在25至75米/秒的范围内。 通过这种布置,在磨削期间在工件和硬磨粒之间产生的接触压力和磨削热被组合。 换句话说,组合了机械和热动作。
    • 57. 发明授权
    • Ceramic compacts
    • 陶瓷压块
    • US4598053A
    • 1986-07-01
    • US706166
    • 1985-02-27
    • Akira YamakawaEiji Kamijo
    • Akira YamakawaEiji Kamijo
    • C04B35/486C04B35/48
    • C04B35/486
    • A ceramic compact having a high transverse rupture strength is provided by a low cost sintering method. This ceramic compact comprises 55 to 96% by volume of a first component, 4 to 45% by volume of a second component and at most 3% by volume of unavoidable impurities:First Component: ZrO.sub.2 consisting of at least 80% by weight of at least one of tetragonal system and cubic system and the balance of mono-clinic system, in which at least one member selected from the group consisting of oxides of Group IIIa (Including Sc, Y, La) elements of the Periodic Table, CaO, MgO, and mixtures thereof are dissolved to form a solid solution.Second Component: at least one member selected from the group consisting of carbonitrides, oxycarbides, oxynitrides and carboxynitrides of group IVa (Including Ti, Zr, Hf), Va (Including V, Nb, Ta) and VIa (Including Cr, Mo, W) elements of the Periodic Table, and mixtures or solid solutions thereof.
    • 通过低成本烧结方法提供具有高横向断裂强度的陶瓷压块。 该陶瓷压块包括55至96体积%的第一组分,4至45体积%的第二组分和至多3体积%的不可避免的杂质:第一组分:由至少80重量%的 至少一种四方晶系和立方体系以及单一临床体系的余量,其中选自元素周期表IIIa族(包括Sc,Y,La)元素的氧化物中的至少一种,CaO,MgO ,及其混合物溶解形成固溶体。 第二成分:选自第Ⅳa族(包括Ti,Zr,Hf),Va(包括V,Nb,Ta)和VIa(包括Cr,Mo,W)的碳氮化物,碳氧化物,氮氧化物和氮氧化物中的至少一种 )元素,以及它们的混合物或固溶体。
    • 60. 发明授权
    • Method of preparing silicon nitride porous body
    • 氮化硅多孔体的制​​备方法
    • US5846460A
    • 1998-12-08
    • US686818
    • 1996-07-26
    • Takahiro MatsuuraChihiro KawaiAkira Yamakawa
    • Takahiro MatsuuraChihiro KawaiAkira Yamakawa
    • B01D39/20B01D71/02B01J27/24B01J32/00B01J35/04C04B35/584C04B38/00C04B38/04
    • B01D67/0041B01D39/2079B01D71/02B01J27/24C04B38/00B01D2323/10C04B2111/00793C04B2111/0081
    • A silicon nitride ceramic porous body having excellent acid and alkali resistance, mechanical strength, and durability can be employed as a filter or a catalytic carrier. The silicon nitride porous body contains a plurality of silicon nitride crystal grains with pores formed in grain boundary parts thereof, or includes a body part and a pore part wherein the body part is formed by a plurality of silicon nitride crystal grains and the pore part forms a three-dimensional network structure. The body part is formed by at least 90 vol. % of silicon nitride crystal grains, which are directly bonded to each other. In order to prepare the finished ceramic porous body, a porous body compact which is mainly composed of silicon nitride, is brought into contact with an acid and/or an alkali so that a component other than silicon nitride is partially or entirely dissolved and removed from the compact. The compact is prepared from a mixed powder of silicon nitride powder and at least one of a rare earth compound powder, a transition metal compound powder, and a bismuth compound, which is heat treated in the temperature range from 1600.degree. C. to 2100.degree. C.
    • 可以使用具有优异的耐酸碱性,机械强度和耐久性的氮化硅陶瓷多孔体作为过滤器或催化载体。 氮化硅多孔体含有在其晶界部分形成有孔的多个氮化硅晶粒,或包括主体部分和孔部分,其中主体部分由多个氮化硅晶粒形成并且孔部分形成 一个三维网络结构。 身体部位形成至少90体积。 %的氮化硅晶粒直接接合。 为了制备成品陶瓷多孔体,将主要由氮化硅组成的多孔体压块与酸和/或碱接触,使得除了氮化硅以外的成分部分或全部溶解并从其中去除 紧凑型。 该压块由氮化硅粉末和稀土化合物粉末,过渡金属化合物粉末和铋化合物中的至少一种的混合粉末制备,其在1600℃至2100℃的温度范围内进行热处理 C。