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51. 发明申请

US20050028739A1 Semiconductor Manufacturing Apparatus 审中-公开
标题翻译：半导体制造装置
公开(公告)号：US20050028739A1
公开(公告)日：2005-02-10
申请号：US10710841
申请日：2004-08-06
申请人： Masuhiro Natsuhara , Hirohiko Nakata
发明人： Masuhiro Natsuhara , Hirohiko Nakata
IPC分类号： C23C16/00 , C23C16/458 , H01L21/68 , H01L21/683
CPC分类号： C23C16/4586 , C23C16/4581
摘要： According to the present invention, a wafer holder is supported by support pieces mounted on a pedestal and is installed within the processing chamber of a semiconductor manufacturing device, wherein the lift pins are set up anchored to the semiconductor-manufacturing-device chamber and the pedestal is driven vertically, thereby running the wafer holder up/down to thrust the lift pins out from, or retract them into, the top side of the wafer holder, which makes it possible to dechuck wafers from and pocket them into the holder. Consequently, leveling the height of the tip ends of the plurality of lift pins is facilitated and synchronization problems are completely eliminated besides, which thus makes it possible to prevent wafer drop-off during wafer dechucking/pocketing. And since a mechanism for synchronously driving the plural lift pins up/down is unnecessary, the device overall can be made more compact.
摘要翻译：根据本发明，晶片保持器由安装在基座上的支撑件支撑并安装在半导体制造装置的处理室内，其中提升销被固定在半导体制造装置室和基座被垂直驱动，从而使晶片保持器上/下移动以将提升销推出或者将其退回到晶片保持器的顶侧，这使得可以将晶片从其中取出并将其包入保持器中。因此，除了多个提升销的顶端的高度以外，还能够完全消除同步问题，从而可以防止晶片脱胶/贴片期间的晶片脱落。并且，由于不需要同时驱动多个提升销的机构，因此能够使装置整体更加紧凑。

52. 发明授权

US06716304B2 Wafer holder for semiconductor manufacturing apparatus, and method of manufacturing the wafer holder 失效
标题翻译：用于半导体制造装置的晶片保持器，以及晶片保持器的制造方法
公开(公告)号：US06716304B2
公开(公告)日：2004-04-06
申请号：US10309402
申请日：2002-12-03
申请人： Akira Kuibira , Hirohiko Nakata , Kenjiro Higaki , Masuhiro Natsuhara , Takashi Ishii , Yasuyuki Matsui
发明人： Akira Kuibira , Hirohiko Nakata , Kenjiro Higaki , Masuhiro Natsuhara , Takashi Ishii , Yasuyuki Matsui
IPC分类号： H05H100
CPC分类号： H01L21/6835 , C04B37/005 , C04B41/009 , C04B41/52 , C04B41/89 , C04B2237/06 , C04B2237/062 , C04B2237/064 , C04B2237/066 , C04B2237/08 , C04B2237/10 , C04B2237/122 , C04B2237/123 , C04B2237/125 , C04B2237/343 , C04B2237/366 , C04B2237/368 , C04B2237/52 , C04B2237/567 , C04B2237/62 , C04B2237/66 , C04B2237/704 , C04B2237/708 , C04B2237/72 , C04B2237/80 , H01L21/4857 , H01L21/67103 , C04B41/0072 , C04B41/4539 , C04B41/4572 , C04B41/5133 , C04B41/5022 , C04B35/581
摘要： A wafer holder for a semiconductor manufacturing apparatus has a high heat conductivity. The wafer holder includes a sintered ceramic piece, a conductive layer such as a heater circuit pattern which can be formed with high precision on at least one surface of the sintered ceramic piece, and a protective layer formed over the conductive layer on the sintered ceramic piece so as to cover a surface of the conductive layer. The protective layer may contain a glass, a non-oxide ceramic such as aluminum nitride or silicon nitride, an oxide of ytterbium, neodymium and calcium, or an oxide of yttrium and aluminum. In a method of manufacturing the wafer holder, a paste containing metal particles is applied on a surface of the sintered ceramic piece and is fired to form a heater circuit pattern as the conductive layer. Then the protective layer is formed on the sintered ceramic piece to cover the surface of the conductive layer.
摘要翻译：用于半导体制造装置的晶片保持器具有高导热性。晶片保持器包括烧结陶瓷片，可以在烧结陶瓷片的至少一个表面上高精度地形成的加热器电路图案的导电层和形成在烧结陶瓷片上的导电层上的保护层以覆盖导电层的表面。保护层可以包含玻璃，诸如氮化铝或氮化硅的非氧化物陶瓷，镱，钕和钙的氧化物，或钇和铝的氧化物。在制造晶片保持器的方法中，将含有金属颗粒的糊剂施加在烧结陶瓷片的表面上，并且被烧制以形成作为导电层的加热器电路图案。然后在烧结陶瓷片上形成保护层以覆盖导电层的表面。

53. 发明授权

US06696103B1 Aluminium nitride ceramics and method for preparing the same 失效
标题翻译：氮化铝陶瓷及其制备方法
公开(公告)号：US06696103B1
公开(公告)日：2004-02-24
申请号：US09358484
申请日：1999-07-22
申请人： Kouhei Shimoda , Kazuya Kamitake , Hirohiko Nakata , Kazutaka Sasaki , Masuhiro Natsuhara , Harutoshi Ukegawa
发明人： Kouhei Shimoda , Kazuya Kamitake , Hirohiko Nakata , Kazutaka Sasaki , Masuhiro Natsuhara , Harutoshi Ukegawa
IPC分类号： B05D500
CPC分类号： C04B41/5063 , C04B35/581 , C04B41/5022 , C04B41/52 , C04B41/86 , C04B41/87 , C04B41/89 , H01L21/481 , H01L23/15 , H01L2924/0002 , H01L2924/00
摘要： Aluminium nitride ceramics improved in heat radiation property used as a substrate for integrated circuits and package material, comprising a sintered article consisting mainly of aluminium nitride and having a thermal conductivity higher than 100.W/m.K at room temperature and a surface layer consisting mainly of aluminium nitride or oxide glass deposited on the sintered article. A paste of aluminium nitride powder or oxide glass powder is coated on a surface of the sintered article of aluminium nitride and then is sintered to prepare a dense smooth surface layer.
摘要翻译：氮化铝陶瓷提高了用作集成电路和封装材料的基板的热辐射性能，其包括主要由氮化铝组成并且在室温下具有高于100.W / mK的热导率的烧结制品，以及主要由将氮化铝或氧化物玻璃沉积在烧结制品上。将氮化铝粉末或氧化物玻璃粉末的浆料涂覆在氮化铝烧结体的表面上，然后烧结以制备致密的光滑表面层。

54. 发明授权

US06653604B2 Heater member for mounting heating object and substrate processing apparatus using the same 有权
标题翻译：用于安装加热物体的加热器部件和使用其的基板处理装置
公开(公告)号：US06653604B2
公开(公告)日：2003-11-25
申请号：US10119812
申请日：2002-04-09
申请人： Masuhiro Natsuhara , Hirohiko Nakata , Akira Kuibira , Kenji Shinma
发明人： Masuhiro Natsuhara , Hirohiko Nakata , Akira Kuibira , Kenji Shinma
IPC分类号： H05B368
CPC分类号： H01L21/67103
摘要： In the heater member for mounting an object of heating, at least a part of a surface other than a surface mounting a substrate such as a semiconductor wafer or a substrate for liquid crystal, is mirror-finished. Accordingly, power fed to the heater for heating to a prescribed temperature can be reduced, and thus, a heater member for mounting an object of heating and a substrate processing apparatus using the heater member, that can heat the object with higher efficiency, can be obtained.
摘要翻译：在用于安装加热对象的加热器构件中，对安装诸如半导体晶片或液晶基板的基板以外的表面的至少一部分进行镜面加工。因此，可以减少供给到加热器的加热到规定温度的电力，因此，可以使用加热器构件加热加热物体的加热器部件和能够以更高的效率加热物体的加热器部件获得。

55. 发明授权

US07855569B2 Wafer holder for wafer prober and wafer prober equipped with the same 有权
标题翻译：用于晶圆探针和晶圆探测器的晶片支架配备相同
公开(公告)号：US07855569B2
公开(公告)日：2010-12-21
申请号：US11287847
申请日：2005-11-29
申请人： Masuhiro Natsuhara , Katsuhiro Itakura , Hirohiko Nakata
发明人： Masuhiro Natsuhara , Katsuhiro Itakura , Hirohiko Nakata
IPC分类号： G01R31/02 , G01R31/28
CPC分类号： G01R31/2886 , G01R31/2891
摘要： The invention provides a wafer-prober wafer holder that allows positional precision and temperature uniformity to be increased, and also allows the chip to be heated and cooled rapidly, and a wafer prober device provided with the same. The wafer-prober wafer holder of the invention is constituted by a chuck top having a chuck top conducting layer on its surface, and a support member for supporting the chuck top, and has a cavity in a portion between the chuck top and the support member. The chuck top preferably is provided with a heating member.
摘要翻译：本发明提供了一种能够提高位置精度和温度均匀性的晶片探针晶片保持器，并且还允许芯片被快速加热和冷却，以及提供其的晶片探测器装置。本发明的晶片探针晶片保持器由其表面上具有卡盘顶部导电层的卡盘顶板和用于支撑卡盘顶部的支撑件构成，并且在卡盘顶部和支撑件之间的部分中具有空腔。卡盘顶部优选地设置有加热构件。

56. 发明授权

US07618494B2 Substrate holding structure and substrate processing device 有权
标题翻译：基板保持结构和基板处理装置
公开(公告)号：US07618494B2
公开(公告)日：2009-11-17
申请号：US10568683
申请日：2004-08-18
申请人： Sumi Tanaka , Tetsuya Saito , Masuhiro Natsuhara , Hirohiko Nakata
发明人： Sumi Tanaka , Tetsuya Saito , Masuhiro Natsuhara , Hirohiko Nakata
IPC分类号： H01L21/00 , C23C16/00 , C23C14/00
CPC分类号： H01L21/68792 , H01L21/67103
摘要： The object of the present invention is to prevent damage due to thermal stress induced into a substrate holding table in a substrate holding structure for holding a substrate to be processed. In the substrate holding structure having the substrate holding table arranged at the top of a support column, a flanged part is defined by an inner circumferential surface and an outer circumferential surface at a joint between the support column and the substrate holding table. The inner circumferential surface is formed of an inclined surface, which is inclined such that the inner diameter of the flanged part successively increases as approaching the lower surface of the substrate holding table. On the lower surface of the substrate holding table to which the flanged part is joined, a U-shaped groove is formed so as to correspond to the outer circumferential surface of the flanged part.
摘要翻译：本发明的目的是防止由于在用于保持待处理的基板的基板保持结构中引入基板保持台的热应力的损坏。在具有布置在支撑柱的顶部的基板保持台的基板保持结构中，由支撑柱和基板保持台之间的接合处的内周面和外周面限定凸缘部。内圆周表面由倾斜的表面形成，使得当接近基板保持台的下表面时，凸缘部分的内径依次增加。在与凸缘部接合的基板保持台的下表面上形成有与凸缘部的外周面对应的U字形槽。

57. 发明授权

US07495460B2 Body for keeping a wafer, heater unit and wafer prober 失效
标题翻译：保存晶片，加热器单元和晶圆探针的主体
公开(公告)号：US07495460B2
公开(公告)日：2009-02-24
申请号：US11498966
申请日：2006-08-04
申请人： Katsuhiro Itakura , Masuhiro Natsuhara , Hirohiko Nakata
发明人： Katsuhiro Itakura , Masuhiro Natsuhara , Hirohiko Nakata
IPC分类号： G01R31/02
CPC分类号： G01R31/2865 , G01R31/2875
摘要： A wafer holding body used for a wafer prober for testing a semiconductor wafer includes a chuck top having a conductive layer on a surface thereof and a support body supporting the chuck top. The support body has a base portion opposing the chuck top and a side portion extending from the perimeter of the base portion to the chuck top to support the chuck top. A cavity portion is formed between the chuck top and the base portion of the support body. A reflection plate is provided in the cavity portion. A heater unit and a wafer prober includes the wafer holding body.
摘要翻译：用于晶片探测器的用于测试半导体晶片的晶片保持体包括其表面上具有导电层的卡盘顶板和支撑卡盘顶部的支撑体。支撑体具有与卡盘顶部相对的基部和从基部的周边延伸到卡盘顶部以支撑卡盘顶部的侧部。在卡盘顶部和支撑体的基部之间形成空腔部分。反射板设置在空腔部分中。加热器单元和晶片探测器包括晶片保持体。

58. 发明申请

US20080277841A1 Ceramic base material 审中-公开
标题翻译：陶瓷基材
公开(公告)号：US20080277841A1
公开(公告)日：2008-11-13
申请号：US12216845
申请日：2008-07-11
申请人： Masuhiro Natsuhara , Hirohiko Nakata , Motoyuki Tanaka , Yasuhiro Murase
发明人： Masuhiro Natsuhara , Hirohiko Nakata , Motoyuki Tanaka , Yasuhiro Murase
IPC分类号： C04B35/64
CPC分类号： H01L23/15 , C04B35/581 , C04B35/584 , H01L2924/0002 , H01L2924/00
摘要： A ceramic base material that is reduced in distortion caused by high-temperature heat treatment. A ceramic base material having sintering agents and satisfying the following formula: a/b≦1.3, where a: the larger of c1 and c2, b: the smaller of c1 and c2, c1: the ratio “k” at a main-surface side, c2: the ratio “k” at the other main-surface side, k=s/m, s: the fluorescent X-ray-detected strength of the constituent elements of the sintering agents, m: the fluorescent X-ray-detected strength of the main-constituent elements.
摘要翻译：陶瓷基材由高温热处理引起的变形减小。具有烧结剂并满足下列公式的陶瓷基材：<？in-line-formula description =“In-line formula”end =“lead”？> a / b <= 1.3，<？in-line-formula description =“直线公式”end =“tail”？>其中a：c1和c2中较大的一个，b：c1和c2中的较小者，c1：主表面侧的比例“k”，c2： k = s / m，s：烧结剂的构成元素的荧光X射线检测强度，m：主要表面侧的荧光X射线检测强度成分元素。

59. 发明授权

US07394043B2 Ceramic susceptor 有权
标题翻译：陶瓷感受器
公开(公告)号：US07394043B2
公开(公告)日：2008-07-01
申请号：US11160825
申请日：2005-07-12
申请人： Akira Kuibira , Masuhiro Natsuhara , Hirohiko Nakata
发明人： Akira Kuibira , Masuhiro Natsuhara , Hirohiko Nakata
IPC分类号： H05B3/68
CPC分类号： H01L21/67103 , H05B3/265
摘要： Ceramic susceptor whose wafer-retaining face has superior isothermal properties, and that is suited to utilization in apparatuses for manufacturing semiconductors and in liquid-crystal manufacturing apparatuses. In plate-shaped sintered ceramic body 1, resistive heating element 2 is formed. Fluctuation in pullback length L between sintered ceramic body outer-peripheral edge 1a and resistive heating element substantive-domain outer-peripheral edge 2a is within ±0.8%, while isothermal rating of the entire surface of the wafer-retaining face is ±1.0% or less. Preferable is a superior isothermal rating of ±0.5% or less that can be achieved by bringing the fluctuation in pullback length L to within ±0.5%.
摘要翻译：其晶片保持面具有优异的等温性能，适用于半导体制造装置和液晶制造装置的陶瓷基座。在板状烧结陶瓷体1中，形成电阻加热元件2。烧结陶瓷体外周边缘1a和电阻加热元件本体外缘边缘2a之间的回拉长度L的波动在±0.8％以内，而晶片保持面的整个表面的等温额定值为±1.0 ％或更少。优选的等温额定值为±0.5％以下，通过使拉回长度L的波动在±0.5％以内可以实现。

60. 发明申请

US20080039312A1 Ceramic base material 审中-公开
标题翻译：陶瓷基材
公开(公告)号：US20080039312A1
公开(公告)日：2008-02-14
申请号：US11907020
申请日：2007-10-09
申请人： Masuhiro Natsuhara , Hirohiko Nakata , Motoyuki Tanaka , Yasuhiro Murase
发明人： Masuhiro Natsuhara , Hirohiko Nakata , Motoyuki Tanaka , Yasuhiro Murase
IPC分类号： C04B35/581
CPC分类号： H01L23/15 , C04B35/581 , C04B35/584 , H01L2924/0002 , H01L2924/00
摘要： A ceramic base material that is reduced in distortion caused by high-temperature heat treatment. A ceramic base material having sintering agents and satisfying the following formula: a/b≦1.3, where a: the larger of c1 and c2, b: the smaller of c1 and c2, c1: the ratio “k” at a main-surface side, c2: the ratio “k” at the other main-surface side, k=s/m, s: the fluorescent X-ray-detected strength of the constituent elements of the sintering agents, m: the fluorescent X-ray-detected strength of the main-constituent elements.
摘要翻译：陶瓷基材由高温热处理引起的变形减小。具有烧结剂并满足下列公式的陶瓷基材：<？in-line-formula description =“In-line formula”end =“lead”？> a / b <= 1.3，<？in-line-formula description =“直线公式”end =“tail”？>其中a：c 1和c 2中的较大者，b：c 1和c 2中的较小者，c 1：主表面的比例“k” 侧，c 2：另一个主面侧的比率“k”，<？in-line-formula description =“In-line Formulas”end =“lead”？> k = s / m，<？ line-formula description =“In-line Formulas”end =“tail”？> s：烧结剂组成元素的荧光X射线检测强度，m：主要的荧光X射线检测强度成分元素。

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