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    • 51. 发明专利
    • Optical semiconductor device and method of manufacturing the same
    • 光学半导体器件及其制造方法
    • JP2012044205A
    • 2012-03-01
    • JP2011228364
    • 2011-10-17
    • Toshiba Corp株式会社東芝
    • KOIZUMI HIROSHIOKADA YASUHIDEOBATA SUSUMUNAKA TOMOMICHIHIGUCHI KAZUTOSHIMOKAWA KAZUOSUGIZAKI YOSHIAKIKOJIMA AKIHIRO
    • H01L33/54H01L33/50
    • PROBLEM TO BE SOLVED: To provide an optical semiconductor device allowing mass production at a low cost and downsizing to the same extent as a semiconductor light-emitting device.SOLUTION: An optical semiconductor device comprises: a light-emitting layer 2 including a stack of semiconductor layers separated from a substrate after being epitaxially grown on the substrate; first and second electrodes 7 formed on a second primary surface of the light-emitting layer; a light-transmitting layer 5 provided on a first primary surface; a fluorescent layer 4 provided on the light-transmitting layer; first and second metal posts 8 provided on the first and second electrodes; and a sealing layer 10 that is provided on the second primary surface, is formed from a material having light shielding properties against the light emitted from the light-emitting layer, seals the first and second metal posts, and covers the side surfaces of the light-emitting layer. The side surfaces of the light-transmitting layer has a portion that is not covered with the fluorescent layer and the sealing layer. A part of the light emitted from the light-emitting layer undergoes wavelength conversion in the fluorescent layer and can be emitted to the outside, and the other part of the light can be emitted to the outside from the side surfaces of the light-transmitting layer.
    • 要解决的问题:提供一种光学半导体器件,其能够以低成本大量生产并且与半导体发光器件相同程度地缩小尺寸。 解决方案:光学半导体器件包括:发光层2,其包括在衬底外延生长之后与衬底分离的半导体层堆叠; 形成在发光层的第二主表面上的第一和第二电极7; 设置在第一主表面上的透光层5; 设置在透光层上的荧光层4; 设置在第一和第二电极上的第一和第二金属柱8; 并且设置在第二主表面上的密封层10由对从发光层发射的光具有遮光性的材料形成,密封第一和第二金属柱,并且覆盖光的侧表面 发光层。 透光层的侧面具有不被荧光层和密封层覆盖的部分。 从发光层发射的光的一部分在荧光层中经历波长转换并且可以发射到外部,并且光的另一部分可以从透光层的侧表面发射到外部 。 版权所有(C)2012,JPO&INPIT
    • 52. 发明专利
    • Semiconductor light-emitting device and method of manufacturing the same
    • 半导体发光器件及其制造方法
    • JP2011258674A
    • 2011-12-22
    • JP2010130522
    • 2010-06-07
    • Toshiba Corp株式会社東芝
    • OBATA SUSUMUNISHIUCHI HIDEOHIGUCHI KAZUTONAKAYAMA TOSHIYA
    • H01L33/44H01L33/38
    • PROBLEM TO BE SOLVED: To provide a semiconductor light-emitting device and a method of manufacturing the same, which is arranged so that a stress added to a semiconductor layer is relaxed, and which can increase the efficiency of light emission.SOLUTION: A semiconductor light-emitting device according to an embodiment includes: a light-emitting part 10d; a first conductive part 30a; a second conductive part 30b; a first insulator layer 21; an encapsulation part 50; and an optical layer 60. The light-emitting part includes: a semiconductor laminate 10 having a first principal face 10b and a second principal face 10a; and first and second electrodes provided on the second principal face. The first and second conductive parts are connected with the first and second electrodes respectively, and include first and second post parts upright provided on the second principal face. The first insulator layer is provided between at least part of the first and second post parts and the semiconductor laminate. The encapsulation part covers the side faces of the first and second conductive parts. The optical layer includes a wavelength conversion part provided on the first principal face of the semiconductor laminate and operable to convert wavelengths of emission light emitted by the light-emitting part 10d.
    • 解决的问题:提供一种半导体发光器件及其制造方法,其被布置为使得加到半导体层上的应力被放宽,并且可以提高发光效率。 解决方案:根据实施例的半导体发光器件包括:发光部分10d; 第一导电部30a; 第二导电部30b; 第一绝缘体层21; 封装部50; 发光部包括:具有第一主面10b和第二主面10a的半导体层叠体10; 以及设置在第二主面上的第一和第二电极。 第一和第二导电部分分别与第一和第二电极连接,并且包括设置在第二主面上的第一和第二立柱。 第一绝缘体层设置在第一和第二柱部件的至少一部分与半导体层叠体之间。 封装部分覆盖第一和第二导电部件的侧面。 光学层包括设置在半导体层叠体的第一主面上的波长转换部,可操作以转换由发光部10d发射的发光的波长。 版权所有(C)2012,JPO&INPIT
    • 53. 发明专利
    • Light source device using semiconductor light-emitting device
    • 使用半导体发光器件的光源器件
    • JP2011258672A
    • 2011-12-22
    • JP2010130520
    • 2010-06-07
    • Toshiba Corp株式会社東芝
    • NISHIUCHI HIDEOHIGUCHI KAZUTOOBATA SUSUMUNAKAYAMA TOSHIYA
    • H01L33/38H01L33/64
    • H01L33/0079H01L24/06H01L33/0095H01L33/507H01L33/508H01L33/647H01L2224/06051H01L2924/12041H01L2933/0066H01L2924/00
    • PROBLEM TO BE SOLVED: To provide a light source device with high heat dissipation, using a compact semiconductor light-emitting device.SOLUTION: The light source device comprises: a semiconductor light-emitting device 110; a mounting substrate 250; a first connection material 230a; and a second connection material 230b. The semiconductor light-emitting device includes: a light-emitting part 10d; a first conductive part 30a; a second conductive part 30b; a sealing part 50; and an optical layer 60. The mounting substrate includes a base substrate 201, a first substrate electrode 210a, and a second substrate electrode 210b. The connection materials electrically interconnect the conductive parts and the substrate electrodes. The first and second conductive parts are electrically connected to the electrodes of the light-emitting parts, and include a first and second column parts that are vertically arranged on a second primary surface. The sealing part covers the side surfaces of the first and second conductive parts. The optical layer includes a wavelength conversion section and is provided on the opposite side of the second primary surface of a semiconductor laminate. The area of the second substrate electrode is more than 100 times the sectional area of the second column part.
    • 要解决的问题:使用小型半导体发光器件来提供具有高散热性的光源器件。 解决方案:光源装置包括:半导体发光器件110; 安装基板250; 第一连接材料230a; 和第二连接材料230b。 半导体发光装置包括:发光部10d; 第一导电部30a; 第二导电部30b; 密封部50; 和光学层60.安装基板包括基底基板201,第一基板电极210a和第二基板电极210b。 连接材料将导电部件和基板电极电连接。 第一和第二导电部分电连接到发光部分的电极,并且包括垂直地布置在第二主表面上的第一和第二列部分。 密封部分覆盖第一和第二导电部分的侧表面。 光学层包括波长转换部分,并且设置在半导体层叠体的第二主表面的相反侧。 第二基板电极的面积是第二列部分的截面面积的100倍以上。 版权所有(C)2012,JPO&INPIT
    • 54. 发明专利
    • Method of manufacturing micromachine device
    • 制造MICROMACHINE装置的方法
    • JP2010207987A
    • 2010-09-24
    • JP2009058361
    • 2009-03-11
    • Toshiba Corp株式会社東芝
    • SOGO TAKAHIROMIYAGI TAKESHIOBATA SUSUMU
    • B81C1/00H01H59/00
    • PROBLEM TO BE SOLVED: To manufacture a micromachine device having high reliability by a simple manufacturing process at a low cost.
      SOLUTION: This method of manufacturing the micromachine device 1 includes: a process for forming a signal wire 15, a driving electrode 14 and a lower part electrode 13 on an insulation board 10; a process for forming insulation films 20 on the signal wire 15 and the driving electrode 14; a process for forming a sacrifice layer 18a made of an inorganic material on the insulation board 10; a process for forming a bridge supporting part 16a and a contact part 16c on the sacrifice layer 18a; a process for forming an insulation body connection joint 19 using an organic material for connecting the bridge supporting part 16a and the contact part 16c; and a process for removing the sacrifice layer 18a.
      COPYRIGHT: (C)2010,JPO&INPIT
    • 要解决的问题:通过简单的制造工艺以低成本制造具有高可靠性的微机械装置。 解决方案:这种制造微机械装置1的方法包括:在绝缘板10上形成信号线15,驱动电极14和下部电极13的工艺; 在信号线15和驱动电极14上形成绝缘膜20的工艺; 在绝缘板10上形成由无机材料制成的牺牲层18a的工艺; 在牺牲层18a上形成桥支撑部16a和接触部16c的工序; 使用有机材料形成绝缘体连接接头19的方法,该有机材料用于连接桥接支撑部分16a和接触部分16c; 以及去除牺牲层18a的过程。 版权所有(C)2010,JPO&INPIT
    • 55. 发明专利
    • Hollow seal and method of manufacturing hollow seal
    • 中空密封件和制造中空密封件的方法
    • JP2010123679A
    • 2010-06-03
    • JP2008294672
    • 2008-11-18
    • Toshiba Corp株式会社東芝
    • INOUE MICHINOBUOBATA SUSUMUMIYAGI TAKESHI
    • H01L23/02B81B3/00B81C1/00
    • PROBLEM TO BE SOLVED: To provide a hollow seal structure whose deformation due to a pressure difference from an atmosphere or thermal expansion of an organic film can be suppressed.
      SOLUTION: A micromachine device 1 includes: a substrate 1; a MEMS (Micro Erectronic Mechanical System) element 16 provided to the substrate 11 and including a mechanism deforming with an electric field to change electric characteristics as the mechanism deforms; a seal 20 provided on a principal surface of the substrate 11 to cover the MEMS element 16 through a hollow portion 17; and a support portion 19 coupled to the substrate 11 at the hollow portion 17 to support the seal 20.
      COPYRIGHT: (C)2010,JPO&INPIT
    • 要解决的问题:提供一种中空密封结构,其可以抑制由于与气氛的压力差或由有机膜的热膨胀引起的变形。 微机械装置1包括:基板1; 提供给基板11的MEMS(微机电系统机械系统)元件16,并且包括随着电场而变形的机构,以随着机构变形而改变电特性; 设置在基板11的主表面上以通过中空部分17覆盖MEMS元件16的密封件20; 以及支撑部分19,其在中空部分17处联接到基板11以支撑密封件20.权利要求:(C)2010,JPO&INPIT
    • 56. 发明专利
    • Micromechanical apparatus and manufacturing method of micromechanical apparatus
    • 微生物装置的微生物装置和制造方法
    • JP2009226499A
    • 2009-10-08
    • JP2008071571
    • 2008-03-19
    • Toshiba Corp株式会社東芝
    • OBATA SUSUMUINOUE MICHINOBUMIYAGI TAKESHI
    • B81B3/00B81C1/00H01G5/16H01H49/00H01H59/00
    • B81B3/0078B81B2201/016B81B2203/0109H01H1/50H01H3/60H01H59/0009Y10T29/49002
    • PROBLEM TO BE SOLVED: To provide a micromechanical apparatus can reduce noise of an output signal by constituting it to easily settle vibration of a micromachine; and a manufacturing method of the micromechanical apparatus. SOLUTION: This micromechanical apparatus 1 is provided with: a substrate 11 having a signal wire 15 on its principal surface; the micromachine 16 that is mounted to the principal surface of the substrate 11, constituted from a conductive material into a beam-like shape, is elastically deformed to approach to or separate from the signal wire by the operation of an electric field, and changes its electric characteristics with the deformation; a deformation regulation section 18 that is constituted from a material having a higher coefficient of viscosity than that of the conductive material, installed at an opposite side to the signal wire 15 of the micromachine 16 and regulates the deformation of the micromachine 16 separating from the signal wire 15; and sealing bodies 21 and 22 that are provided on the principal surface of the substrate 11 and cover the micromachine via a hollow part 17. COPYRIGHT: (C)2010,JPO&INPIT
    • 要解决的问题:为了提供一种微机械装置,可以通过构成微机械的振动来降低输出信号的噪声; 以及微机械装置的制造方法。 解决方案:该微机械装置1设置有:在其主表面上具有信号线15的基板11; 安装到基板11的主表面的微机械16由导电材料构成为波束形状,通过电场的操作而弹性变形以接近信号线或与信号线分离,并且将其改变为 电特性随变形; 变形调节部分18,其由具有比导电材料更高的粘度系数的材料构成,该材料安装在与微型机器16的信号线15相反的一侧,并调节与信号分离的微型机器16的变形 电线15; 以及设置在基板11的主表面上并通过中空部分17覆盖微机械的密封体21和22.版权所有(C)2010,JPO&INPIT
    • 57. 发明专利
    • Micromechanical apparatus and manufacturing method of micromechanical apparatus
    • 微生物装置的微生物装置和制造方法
    • JP2009226497A
    • 2009-10-08
    • JP2008071569
    • 2008-03-19
    • Toshiba Corp株式会社東芝
    • OBATA SUSUMUINOUE MICHINOBUMIYAGI TAKESHI
    • B81B3/00B81C1/00H01G5/16H01H59/00
    • PROBLEM TO BE SOLVED: To provide a micromechanical apparatus can reduce noise of an output signal by suppressing vibration of a micromachine; and a manufacturing method of the micromechanical apparatus.
      SOLUTION: This micromechanical apparatus 1 is provided with: a substrate 11 having a signal wire 15 on its principal surface; the micromachine 16 that is provided on the principal surface of the substrate 11 astride the signal wire 15, and has a center impeller type beam-like portion 16a, wherein the beam-like portion 16a whose one side and other side are structured asymmetrically with respect to the signal wire 15, is elastically deformably retained in the direction of approaching to or separating from the signal wire by the operation of an electric field; and a sealing body 21 that is provided on the principal surface of the substrate 11 and covers the micromachine via a hollow part 17.
      COPYRIGHT: (C)2010,JPO&INPIT
    • 要解决的问题:提供一种微机械装置可以通过抑制微机械的振动来降低输出信号的噪声; 以及微机械装置的制造方法。 解决方案:该微机械装置1设置有:在其主表面上具有信号线15的基板11; 设置在基板11的主表面上的微机械机构16跨越信号线15,并具有中心叶轮型梁状部分16a,其中一侧和另一侧的结构不对称地构成的梁状部分16a 信号线15通过电场的操作而弹性变形地保持在靠近或与信号线分离的方向上; 以及密封体21,其设置在基板11的主表面上并且经由中空部17覆盖微机械。版权所有(C)2010,JPO&INPIT