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    • 60. 发明申请
    • POROUS SILICON AND METHOD OF PREPARING THE SAME
    • 多孔硅及其制备方法
    • US20080166538A1
    • 2008-07-10
    • US11967138
    • 2007-12-29
    • Sang Woo LIMYoung Hwan Lee
    • Sang Woo LIMYoung Hwan Lee
    • B32B3/26C25D9/06
    • C25D11/32H01L21/0203H01L21/3063H01L33/346Y10T428/24942Y10T428/249953Y10T428/24996Y10T428/249969
    • The present invention relates to a vertical-alignment type porous silicon including a first pore 11 which is formed in an upper side of the silicon, a second pore 12 which is formed in a lower side of the first pore 11 and has a diameter that is larger or smaller than a diameter of the first pore 11, a third pore 13 which is formed in a lower side of the second pore 12 and has a diameter that is identical or similar to the diameter of the first pore 11, and one or more pore parts 11, 12, and 13 which includes the first pore 11, the second pore 12, and the third pore 13. A pore part having a double structure is formed in a silicon. Thus, the silicon having an improved surface area can be obtained as compared to a known porous silicon, and since different electronic materials can be implanted into different pores, it is easy to form interfaces of the implanted electronic materials.
    • 本发明涉及一种垂直取向型多孔硅,其包括形成于硅的上侧的第一孔11,第二孔12,其形成在第一孔11的下侧,直径为 大于或小于第一孔11的直径;第三孔13,其形成在第二孔12的下侧,并且具有与第一孔11的直径相同或相似的直径,以及一个或多个 包括第一孔11,第二孔12和第三孔13的孔部分11,12和13。 在硅中形成具有双重结构的孔部分。 因此,与已知的多孔硅相比,可以获得具有改善的表面积的硅,并且由于可以将不同的电子材料注入到不同的孔中,所以容易形成植入的电子材料的界面。