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51. 发明授权

US06647087B2 Exposure method 失效
公开(公告)号：US06647087B2
公开(公告)日：2003-11-11
申请号：US09981080
申请日：2001-10-18
申请人： Mitsuaki Amemiya , Shunichi Uzawa
发明人： Mitsuaki Amemiya , Shunichi Uzawa
IPC分类号： G21K500
CPC分类号： G03F7/7035 , G03F1/70 , G03F7/001 , G03F7/2022 , G03F7/70466
摘要： An exposure method for exposing a workpiece in a proximity exposure system, includes a first exposure step for printing, by exposure, an image of a first mask pattern on a predetermined portion of the workpiece, and a second exposure step for printing, by exposure, an image of a second mask pattern, different from the first mask pattern, on the predetermined portion of the workpiece, wherein exposures in the first and second exposure steps are performed superposedly, prior to a development process.

52. 发明授权

US06327332B1 Exposure method 有权
标题翻译：曝光方法
公开(公告)号：US06327332B1
公开(公告)日：2001-12-04
申请号：US09425223
申请日：1999-10-22
申请人： Mitsuaki Amemiya , Shunichi Uzawa
发明人： Mitsuaki Amemiya , Shunichi Uzawa
IPC分类号： H01L2130
CPC分类号： G03F7/7035 , G03F1/70 , G03F7/001 , G03F7/2022 , G03F7/70466
摘要： An exposure method for posing a workpiece in a proximity exposure system, includes a first exposure step for printing, by exposure, an image of a first mask pattern on a predetermined portion of the workpiece, and a second exposure step for printing, by exposure, an image of a second mask pattern, different from the first mask pattern, on the predetermined portion of the workpiece, wherein exposures in the first and second exposure steps are performed superposedly, prior to a development process.
摘要翻译：一种用于在接近曝光系统中曝光工件的曝光方法包括：第一曝光步骤，用于通过曝光打印在工件的预定部分上的第一掩模图案的图像;以及第二曝光步骤，用于通过曝光打印，在工件的预定部分上的与第一掩模图案不同的第二掩模图案的图像，其中在显影处理之前，重叠地执行第一和第二曝光步骤中的曝光。

53. 发明授权

US5687947A Mounting method 失效
标题翻译：安装方法
公开(公告)号：US5687947A
公开(公告)日：1997-11-18
申请号：US422932
申请日：1995-04-17
申请人： Kazunori Iwamoto , Shunichi Uzawa , Takao Kariya , Ryuichi Ebinuma , Hiroshi Chiba , Shinkichi Ohkawa
发明人： Kazunori Iwamoto , Shunichi Uzawa , Takao Kariya , Ryuichi Ebinuma , Hiroshi Chiba , Shinkichi Ohkawa
IPC分类号： G03F7/20 , G12B5/00 , F16M13/00
CPC分类号： G03F7/707 , G03F7/70841 , G03F7/70858 , G03F7/70866 , G03F7/70883 , G12B5/00
摘要： A method of supporting or mounting a precision instrument for supporting a mask and a wafer in a vacuum container is disclosed. The method is particularly applicable to an SOR X-ray exposure apparatus wherein the mask and the wafer are disposed in a desired level of the reduced pressure, and exposure energy such as X-rays contained in synchrotron radiation is projected onto the wafer through the mask to print the pattern of the mask onto the wafer. In x-y-z coordinates with the x direction being vertical, the precision instrument is hung at at least two points which are spaced in the x direction, to the inside wall of the vacuum container. At one of the supporting points, the precision instrument is given latitude of x, y and z direction movement, and at the other supporting point, the precision instrument is fixed or is given latitude only in the x direction. By this arrangement, when the vacuum container deforms by the difference between the internal and external pressures, the precision instrument can be supported correctly.
摘要翻译：公开了一种在真空容器中支撑或安装用于支撑掩模和晶片的精密仪器的方法。该方法特别适用于SOR X射线曝光装置，其中掩模和晶片被设置在期望的减压水平，并且包含在同步加速器辐射中的诸如X射线的曝光能量通过掩模投射到晶片上以将掩模的图案打印到晶片上。在x方向垂直的x-y-z坐标系中，将精密仪器挂在至少两个x方向间隔的点上，与真空容器的内壁相连。在其中一个支撑点上，精密仪器具有x，y和z方向运动的纬度，而在另一个支撑点，精密仪器是固定的，或仅在x方向上被赋予纬度。通过这种布置，当真空容器因内部和外部压力之间的差异而变形时，可以正确地支撑精密仪器。

54. 发明授权

US5680428A Process for holding an object 失效
标题翻译：持有对象的过程
公开(公告)号：US5680428A
公开(公告)日：1997-10-21
申请号：US519755
申请日：1995-08-28
申请人： Mitsuaki Amemiya , Shunichi Uzawa
发明人： Mitsuaki Amemiya , Shunichi Uzawa
IPC分类号： G03F7/20 , H01L21/027 , H01L21/30 , H01L21/683 , B32B31/04
CPC分类号： G03F7/70716 , G03F7/70783 , G03F7/70866 , G03F7/70875 , Y10T279/11
摘要： Disclosed are an object holding process and and an apparatus therefor in which a process strain of the object can be accurately compensated for. When the exposure operation is started, the bottom surface of the object is held by a holding unit. If the object has a strain, the process strain is calculated. Here, if the process strain is larger than a tolerance, the temperature of the object is set to an object setting temperature in a position other than an exposure position in order to contract or expand the object by a predetermined amount for a magnification correction. The bottom surface of the object is then held by the holding unit again, and the exposure of the object is performed in the exposure position.
摘要翻译：公开了一种物体保持过程及其装置，其中可以精确地补偿物体的过程应变。当曝光操作开始时，物体的底面由保持单元保持。如果物体有应变，则计算过程应变。这里，如果过程应变大于公差，则将物体的温度设定为除曝光位置以外的位置的物体设定温度，以使物体收缩或扩大预定量用于倍率校正。然后，物体的底面再次被保持单元保持，并且在曝光位置进行物体的曝光。

55. 发明授权

US5390227A Exposure apparatus 失效
标题翻译：曝光装置
公开(公告)号：US5390227A
公开(公告)日：1995-02-14
申请号：US062151
申请日：1993-05-17
申请人： Nobutoshi Mizusawa , Ryuichi Ebinuma , Takao Kariya , Isamu Shimoda , Shunichi Uzawa
发明人： Nobutoshi Mizusawa , Ryuichi Ebinuma , Takao Kariya , Isamu Shimoda , Shunichi Uzawa
IPC分类号： G03F7/20 , G21K5/00
CPC分类号： G03F7/70066 , G03F7/702 , G03F7/70858 , G03F7/70875
摘要： An exposure apparatus for exposing a semiconductor wafer to a semiconductor device pattern formed in a mask. The exposure energy is, for example, X-rays contains in synchrotron orbit radiation. A blade for limiting the area irradiated with the exposure energy on a mask or wafer is integrally movable in an alignment detecting unit for detecting the alignment mark. Four of such blades are provided to provide a square exposure area. The blades are movable independently by the associated alignment detecting units. Each of the blades is finely movable relative to the associated alignment detecting unit. The shape or size or the like of the blade is determined in consideration of the position of the blade in the direction of the exposure energy irradiation, and the maximum and minimum exposure view angle. The blade is cooled. The exposure area can be changed highly accurately and efficiently with a simple structure.
摘要翻译：一种用于将半导体晶片暴露于形成在掩模中的半导体器件图案的曝光装置。曝光能量例如是X射线含有同步加速器轨道辐射。用于将在曝光能量上照射的面积限制在掩模或晶片上的刀片可在用于检测对准标记的对准检测单元中一体地移动。提供四个这样的刀片以提供方形曝光区域。叶片可通过相关联的对准检测单元独立地移动。每个叶片相对于相关联的对准检测单元精细地移动。考虑到叶片在曝光能量照射方向上的位置以及最大和最小曝光视角来确定叶片的形状或尺寸等。刀片冷却。曝光区域可以用简单的结构高精度高效地进行改变。

56. 发明授权

US5317615A Exposure apparatus 失效
标题翻译：曝光装置
公开(公告)号：US5317615A
公开(公告)日：1994-05-31
申请号：US987554
申请日：1992-12-08
申请人： Ryuichi Ebinuma , Nobutoshi Mizusawa , Takao Kariya , Shigeyuki Suda , Shunichi Uzawa , Takayuki Hasegawa
发明人： Ryuichi Ebinuma , Nobutoshi Mizusawa , Takao Kariya , Shigeyuki Suda , Shunichi Uzawa , Takayuki Hasegawa
IPC分类号： G03F7/20 , G03F9/00 , G21K5/00
CPC分类号： G03F7/70066 , G03F7/70858 , G03F7/70891 , G03F9/70
摘要： An exposure apparatus and method for exposing a workpiece to a pattern of an original with radiation includes a masking device having movable blades for variably defining an aperture to selectively block and transmit the radiation to define on the workpiece a desired exposure zone corresponding to the aperture, the masking device having a window, and a detector for detecting the positional deviation between the original and the workpiece by using light passing through the window of the masking device.
摘要翻译：一种用于将工件暴露于具有辐射的原稿图案的曝光装置和方法包括：具有可动刀片的掩模装置，用于可变地限定孔径以选择性地阻挡和透射辐射，以在工件上限定对应于孔的期望曝光区域，具有窗口的掩蔽装置和用于通过使用穿过掩蔽装置的窗口的光检测原件和工件之间的位置偏差的检测器。

57. 发明授权

US5168512A Method of manufacture of semiconductor devices 失效
标题翻译：半导体器件制造方法
公开(公告)号：US5168512A
公开(公告)日：1992-12-01
申请号：US668238
申请日：1991-03-12
申请人： Kazunori Iwamoto , Nobutoshi Mizusawa , Takao Kariya , Shunichi Uzawa , Ryuichi Ebinuma
发明人： Kazunori Iwamoto , Nobutoshi Mizusawa , Takao Kariya , Shunichi Uzawa , Ryuichi Ebinuma
IPC分类号： G03F7/20 , G21K1/02 , H01L21/027
CPC分类号： G03F7/702 , G03F7/2039 , G03F7/70691 , G03F7/70808 , G21K1/025 , H01L21/0278
摘要： A method for the manufacture of semiconductor devices wherein a radiation beam including first and second beams is projected from a synchrotron orbit radiation source into an ambience maintained substantially at a vacuum, includes the steps of directing the radiation beam to a wafer through a window effective to isolate the ambience to thereby print a circuit pattern on an X-ray sensitive layer on the wafer with the first beam, providing a support for supporting the window having an opening, extracting the second beam through the opening, and detecting and correcting any deviation of the first beam with respect to the wafer.

58. 发明授权

US5142156A Alignment method for printing a pattern of an original onto different surface areas of a substrate 失效
标题翻译：一种将原始图案印在基板不同表面上的对准方法
公开(公告)号：US5142156A
公开(公告)日：1992-08-25
申请号：US588947
申请日：1990-09-27
申请人： Kunitaka Ozawa , Shunichi Uzawa , Hirohisa Ohta , Makiko Mori , Noriyuki Nose
发明人： Kunitaka Ozawa , Shunichi Uzawa , Hirohisa Ohta , Makiko Mori , Noriyuki Nose
IPC分类号： G03F7/20 , G03F9/00 , G05D3/12 , H01L21/027 , H01L21/30
CPC分类号： G03F7/70883 , G03F9/70
摘要： An alignment method for use in an exposure apparatus for printing a pattern of an original onto different surface areas of a substrate, the alignment method comprising the steps of: providing alignment marks around the pattern of the original and placing the original on an original supporting stage; providing a reference mark on an X-Y stage for supporting the substrate and being movable in X and Y directions, and moving the X-Y stage so as to place the reference mark at those positions, in sequence, which correspond to the alignment marks of the original, respectively, and which are preset in respect to a stage coordinate system; detecting, in sequence, positional errors of the alignment marks of the original with respect to the corresponding set positions, respectively, by using the reference mark and through the movement of the X-Y stage, wherein the positional errors are detected by use of positional error detectors which are provided to be associated with the alignment marks of the original, respectively; calculating a rotational error of the original with respect to the stage coordinate system, in .theta. direction, by using the positional errors; and rotationally moving the original supporting table in the .theta. direction so as to correct the rotational error.

59. 发明授权

US5128975A X-ray exposure system 失效
标题翻译： X射线曝光系统
公开(公告)号：US5128975A
公开(公告)日：1992-07-07
申请号：US641332
申请日：1991-01-15
申请人： Kazunori Iwamoto , Shunichi Uzawa , Takao Kariya , Ryuichi Ebinuma
发明人： Kazunori Iwamoto , Shunichi Uzawa , Takao Kariya , Ryuichi Ebinuma
IPC分类号： G03F9/00 , G03F7/20 , H01L21/027 , H01L21/30
CPC分类号： G03F7/707 , G03F7/708
摘要： An X-ray exposure system for exposing a semiconductor wafer to a mask with X-rays contained in synchrotron radiation, is disclosed. In this system, the mask and the wafer are held on a main frame so that their surfaces extend substantially parallel to a vertical axis. The main frame suspends from a supporting frame through a plurality of air mounts, each being vertically displaceable. The supporting frame is placed on the same reference surface as that of an SOR ring that produces synchrotron radiation. By using these air mounts, any tilt of the mask and the wafer relative to the irradiation region of the synchrotron radiation, as well as the position of the mask and the wafer in the vertical direction, with respect to the irradiation region, can be controlled and maintained constant. Thus, accurate pattern printing is ensured.
摘要翻译：公开了一种用于将半导体晶片暴露于具有同步加速器辐射中所含的X射线的掩模的X射线曝光系统。在该系统中，掩模和晶片被保持在主框架上，使得其表面基本上平行于垂直轴线延伸。主框架通过多个空气支架从支撑框架悬挂，每个空气支架可垂直移动。支撑框架放置在与产生同步加速器辐射的SOR环相同的参考表面上。通过使用这些空气支架，可以控制掩模和晶片相对于照射区域相对于同步加速器辐射的照射区域的任何倾斜以及掩模和晶片在垂直方向上的位置。并保持不变。因此，确保了精确的图案印刷。

60. 发明授权

US5112133A Alignment system 失效
标题翻译：对齐系统
公开(公告)号：US5112133A
公开(公告)日：1992-05-12
申请号：US769495
申请日：1991-10-01
申请人： Hiroshi Kurosawa , Koji Uda , Kunitaka Ozawa , Shunichi Uzawa , Ryuichi Ebinuma , Takao Kariya
发明人： Hiroshi Kurosawa , Koji Uda , Kunitaka Ozawa , Shunichi Uzawa , Ryuichi Ebinuma , Takao Kariya
IPC分类号： G03F9/00 , H01L21/027 , H01L21/30 , H01L21/68
CPC分类号： G03F9/70 , H01L21/681 , H01L21/682 , Y10T307/786
摘要： An alignment system usable in an exposure apparatus for printing a pattern of a mask on a wafer, for aligning the mask and the wafer, is disclosed. The system includes a plurality of position detecting devices; a plurality of driving stages corresponding to the position detecting devices, respectively, each driving stage being adapted to move a corresponding one of the position detecting devices two-dimensionally along a plane which is substantially opposed to the mask; a plurality of contacts corresponding to the position detecting devices, respectively, each contact being provided at an end portion of a corresponding one of the position detecting devices, along the plane and facing the pattern side; a detecting device for detecting mutual approach of the position detecting devices through at least one of the contacts; and a control device for controlling movement of at least one of the driving stages in accordance with the detection by the detecting device.

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