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51. 发明申请

US20110034035A1 STRESS MANAGEMENT FOR TENSILE FILMS 有权
标题翻译：拉伸片的应力管理
公开(公告)号：US20110034035A1
公开(公告)日：2011-02-10
申请号：US12604332
申请日：2009-10-22
申请人： Jingmei Liang , Anjana M. Patel , Nitin K. Ingle , Shankar Venkataraman
发明人： Jingmei Liang , Anjana M. Patel , Nitin K. Ingle , Shankar Venkataraman
IPC分类号： H01L21/30
CPC分类号： H01L21/31608 , C23C16/401 , C23C16/452 , C23C16/56 , H01L21/02164 , H01L21/0217 , H01L21/02274 , H01L21/02304 , H01L21/02326 , H01L21/02362 , H01L21/3185 , H01L21/76829 , H01L21/76834 , H01L21/76837
摘要： The formation of a gap-filling silicon oxide layer with reduced tendency towards cracking is described. The deposition involves the formation of a flowable silicon-containing layer which facilitates the filling of trenches. Subsequent processing at high substrate temperature causes less cracking in the dielectric film than flowable films formed in accordance with methods in the prior art. A compressive liner layer deposited prior to the formation of the gap-filling silicon oxide layer is described and reduces the tendency for the subsequently deposited film to crack. A compressive capping layer deposited after a flowable silicon-containing layer has also been determined to reduce cracking. Compressive liner layers and compressive capping layers can be used alone or in combination to reduce and often eliminate cracking. Compressive capping layers in disclosed embodiments have additionally been determined to enable an underlying layer of silicon nitride to be transformed into a silicon oxide layer.
摘要翻译：描述了具有降低的开裂倾向的间隙填充氧化硅层的形成。沉积涉及形成有助于填充沟槽的可流动的含硅层。在基板温度高的情况下，与根据现有技术中的方法形成的可流动膜相比，电介质膜中的裂纹少。描述在形成间隙填充氧化硅层之前沉积的压缩衬垫层，并且降低随后沉积的膜破裂的倾向。在可流动的含硅层之后沉积的压缩覆盖层也被确定以减少开裂。压缩衬里层和压缩覆盖层可以单独使用或组合使用以减少并经常消除开裂。已经确定了所公开的实施例中的压缩覆盖层，以使氮化硅的下层能够转化为氧化硅层。

52. 发明授权

US07654224B2 Method and apparatus for cleaning a CVD chamber 有权
标题翻译：用于清洁CVD室的方法和设备
公开(公告)号：US07654224B2
公开(公告)日：2010-02-02
申请号：US12372312
申请日：2009-02-17
申请人： Maosheng Zhao , Juan Carlos Rocha-Alvarez , Inna Shmurun , Soova Sen , Mao D. Lim , Shankar Venkataraman , Ju-Hyung Lee
发明人： Maosheng Zhao , Juan Carlos Rocha-Alvarez , Inna Shmurun , Soova Sen , Mao D. Lim , Shankar Venkataraman , Ju-Hyung Lee
IPC分类号： H01L21/00 , C23C16/00
CPC分类号： C23C16/4405 , C23C16/458 , C23C16/46 , H01J37/32082 , H01J37/32862 , H01L21/67103
摘要： The present invention is a method and apparatus for cleaning a chemical vapor deposition (CVD) chamber using cleaning gas energized to a plasma in a gas mixing volume separated by an electrode from a reaction volume of the chamber. In one embodiment, a source of RF power is coupled to a lid of the chamber, while a switch is used to couple a showerhead to ground terminals or the source of RF power.
摘要翻译：本发明是一种方法和装置，该方法和设备使用在由电极与腔室的反应体积分离的气体混合容积中的等离子体通电的清洁气体来清洁化学气相沉积（CVD）室。在一个实施例中，RF功率源耦合到室的盖，而开关用于将喷头连接到接地端子或RF功率源。

53. 发明申请

US20090145360A1 METHOD AND APPARATUS FOR CLEANING A CVD CHAMBER 有权
标题翻译：清洁CVD室的方法和装置
公开(公告)号：US20090145360A1
公开(公告)日：2009-06-11
申请号：US12372312
申请日：2009-02-17
申请人： Maosheng Zhao , Juan Carlos Rocha-Alvarez , Inna Shmurun , Soova Sen , Mao D. Lim , Shankar Venkataraman , Ju-Hyung Lee
发明人： Maosheng Zhao , Juan Carlos Rocha-Alvarez , Inna Shmurun , Soova Sen , Mao D. Lim , Shankar Venkataraman , Ju-Hyung Lee
IPC分类号： C23C16/54
CPC分类号： C23C16/4405 , C23C16/458 , C23C16/46 , H01J37/32082 , H01J37/32862 , H01L21/67103
摘要： The present invention is a method and apparatus for cleaning a chemical vapor deposition (CVD) chamber using cleaning gas energized to a plasma in a gas mixing volume separated by an electrode from a reaction volume of the chamber. In one embodiment, a source of RF power is coupled to a lid of the chamber, while a switch is used to couple a showerhead to ground terminals or the source of RF power.
摘要翻译：本发明是一种方法和装置，该方法和设备使用在由电极与腔室的反应体积分离的气体混合容积中的等离子体通电的清洁气体来清洁化学气相沉积（CVD）室。在一个实施例中，RF功率源耦合到室的盖，而开关用于将喷头连接到接地端子或RF功率源。

54. 发明授权

US07528051B2 Method of inducing stresses in the channel region of a transistor 失效
标题翻译：在晶体管的沟道区域中产生应力的方法
公开(公告)号：US07528051B2
公开(公告)日：2009-05-05
申请号：US10846734
申请日：2004-05-14
申请人： Reza Arghavani , Zheng Yuan , Ellie Y. Yieh , Shankar Venkataraman , Nitin K. Ingle
发明人： Reza Arghavani , Zheng Yuan , Ellie Y. Yieh , Shankar Venkataraman , Nitin K. Ingle
IPC分类号： H01L21/76
CPC分类号： H01L29/6656 , H01L21/823807 , H01L29/6659 , H01L29/7833 , H01L29/7846
摘要： A method of fabricating a semiconductor device, where the method includes forming a transistor on a substrate, where the transistor includes a channel region configured to conduct charge between a source region and a drain region, forming a trench adjacent to the transistor, depositing a material on the substrate and within the trench, and annealing the material, where the material is tensile following the annealing and creates a tensile stress in the channel region. Also, a method of forming a trench isolation in a semiconductor device, where the method includes forming a trench in a substrate, forming a material within the trench at a lower deposition rate, forming the material on the substrate at a higher deposition rate after the depositing of the material within the trench, and annealing the material, where after the annealing the material in the trench is tensile.
摘要翻译：一种制造半导体器件的方法，其中所述方法包括在衬底上形成晶体管，其中所述晶体管包括被配置为在源极区域和漏极区域之间传导电荷的沟道区域，形成与所述晶体管相邻的沟槽，在衬底上和沟槽内，并对材料进行退火，其中材料在退火之后是拉伸的，并且在沟道区域中产生拉伸应力。另外，在半导体器件中形成沟槽隔离的方法，其中所述方法包括在衬底中形成沟槽，以较低的沉积速率在沟槽内形成材料，在衬底上以更高的沉积速率在衬底上形成材料在沟槽内沉积材料并退火材料，其中在退火之后，沟槽中的材料是拉伸的。

55. 发明授权

US07500445B2 Method and apparatus for cleaning a CVD chamber 有权
标题翻译：用于清洁CVD室的方法和设备
公开(公告)号：US07500445B2
公开(公告)日：2009-03-10
申请号：US10354214
申请日：2003-01-27
申请人： Maosheng Zhao , Juan Carlos Rocha-Alvarez , Inna Shmurun , Soova Sen , Mao D. Lim , Shankar Venkataraman , Ju-Hyung Lee
发明人： Maosheng Zhao , Juan Carlos Rocha-Alvarez , Inna Shmurun , Soova Sen , Mao D. Lim , Shankar Venkataraman , Ju-Hyung Lee
IPC分类号： C23C16/00 , H01L21/00
CPC分类号： C23C16/4405 , C23C16/458 , C23C16/46 , H01J37/32082 , H01J37/32862 , H01L21/67103
摘要： The present invention is a method and apparatus for cleaning a chemical vapor deposition (CVD) chamber using cleaning gas energized to a plasma in a gas mixing volume separated by an electrode from a reaction volume of the chamber. In one embodiment, a source of RF power is coupled to a lid of the chamber, while a switch is used to couple a showerhead to ground terminals or the source of RF power.
摘要翻译：本发明是一种方法和装置，该方法和设备使用在由电极与腔室的反应体积分离的气体混合容积中的等离子体通电的清洁气体来清洁化学气相沉积（CVD）室。在一个实施例中，RF功率源耦合到室的盖，而开关用于将喷头连接到接地端子或RF功率源。

56. 发明授权

US07431967B2 Limited thermal budget formation of PMD layers 失效
标题翻译：有限的热预算形成PMD层
公开(公告)号：US07431967B2
公开(公告)日：2008-10-07
申请号：US10757770
申请日：2004-01-14
申请人： Zheng Yuan , Shankar Venkataraman , Cary Ching , Shang Wong , Kevin Mikio Mukai , Nitin K. Ingle
发明人： Zheng Yuan , Shankar Venkataraman , Cary Ching , Shang Wong , Kevin Mikio Mukai , Nitin K. Ingle
IPC分类号： C23C16/00 , C23C14/00 , C23C16/22 , H01L21/302 , H01L21/461
CPC分类号： C23C16/401 , C23C16/45512 , C23C16/45523 , C23C16/52 , H01L21/02129 , H01L21/02164 , H01L21/022 , H01L21/02271 , H01L21/02274 , H01L21/31608 , H01L21/31625 , H01L21/76837
摘要： A method of filling a gap on a substrate includes providing flows of silicon-containing processing gas oxidizing processing gas, and phosphorous-containing processing gas to a chamber housing the substrate and depositing a first portion of a P-doped silicon oxide film as a substantially conformal layer in the gap by causing a reaction among the processing gases and varying over time a ratio of the gases. The temperature of the substrate is maintained below about 500° C. throughout deposition of the conformal layer. The method also includes depositing a second portion of the P-doped silicon oxide film as a bulk layer by maintaining the ratio of the gases substantially constant throughout deposition of the bulk layer. The temperature of the substrate is maintained below about 500° C. throughout deposition of the bulk layer.
摘要翻译：在衬底上填充间隙的方法包括提供含硅处理气体氧化处理气体和含磷处理气体的流向容纳衬底的腔室，并将P掺杂氧化硅膜的第一部分基本上通过引起处理气体之间的反应并随时间改变气体的比例，间隙中的保形层。在保形层的沉积过程中，基板的温度保持在约500℃以下。该方法还包括通过在本体层的整个沉积期间保持气体的比率基本恒定来沉积P掺杂氧化硅膜的第二部分作为本体层。在本体层的整个沉积过程中，衬底的温度保持在约500℃以下。

57. 发明授权

US07141483B2 Nitrous oxide anneal of TEOS/ozone CVD for improved gapfill 有权
标题翻译： TEOS /臭氧CVD的一氧化二氮退火以改善间隙填料
公开(公告)号：US07141483B2
公开(公告)日：2006-11-28
申请号：US10757771
申请日：2004-01-14
申请人： Zheng Yuan , Reza Arghavani , Shankar Venkataraman
发明人： Zheng Yuan , Reza Arghavani , Shankar Venkataraman
IPC分类号： H01L21/76 , H01L21/31 , H01L21/469
CPC分类号： H01L21/31612 , C23C16/045 , C23C16/401 , C23C16/402 , C23C16/45512 , C23C16/45523 , C23C16/52 , C23C16/56 , H01L21/02129 , H01L21/02164 , H01L21/02216 , H01L21/02271 , H01L21/02312 , H01L21/76224 , H01L21/76822 , H01L21/76828 , H01L23/53295 , H01L2924/0002 , H01L2924/00
摘要： A method of filling a gap defined by adjacent raised features on a substrate includes providing a flow of a silicon-containing processing gas to a chamber housing the substrate and providing a flow of an oxidizing gas to the chamber. The method also includes depositing a first portion of a film as a substantially conformal layer in the gap by causing a reaction between the silicon-containing processing gas and the oxidizing gas. Depositing the conformal layer includes varying over time a ratio of the (silicon-containing processing gas):(oxidizing gas) and regulating the chamber to a pressure in a range from about 200 torr to about 760 torr throughout deposition of the conformal layer. The method also includes depositing a second portion of the film as a bulk layer. Depositing a second portion of the film includes maintaining the ratio of the (silicon-containing processing gas):(oxidizing gas) substantially constant throughout deposition of the bulk layer and regulating the chamber to a pressure in a range from about 200 torr to about 760 torr throughout deposition of the bulk layer. The method also includes exposing the substrate to nitrous oxide at a temperature less than about 900° C. to anneal the deposited film.
摘要翻译：填充由衬底上的相邻凸起特征限定的间隙的方法包括提供含硅处理气体流到容纳衬底并且向腔室提供氧化气体流的腔室。该方法还包括通过引起含硅处理气体和氧化气体之间的反应，将膜的第一部分沉积在间隙中作为基本上共形的层。沉积保形层包括随着时间的推移，在沉积共形层的过程中，（含硅处理气体）:(氧化气体）的比例和室的调节范围为约200托至约760托的压力。该方法还包括将膜的第二部分沉积为本体层。沉积薄膜的第二部分包括在沉积主体层期间保持（含硅处理气体）:(氧化气体）的比例基本上恒定，并将室调节到约200托至约760的范围内的压力托盘在整个堆积层的沉积中。该方法还包括在小于约900℃的温度下将衬底暴露于一氧化二氮以使沉积的膜退火。

58. 发明申请

US20060231205A1 METHOD AND APPARATUS FOR CLEANING A CVD CHAMBER 失效
公开(公告)号：US20060231205A1
公开(公告)日：2006-10-19
申请号：US11426154
申请日：2006-06-23
申请人： Maosheng Zhao , Juan Rocha-Alvarez , Inna Shmurun , Soova Sen , Mao Lim , Shankar Venkataraman , Ju-Hyung Lee
发明人： Maosheng Zhao , Juan Rocha-Alvarez , Inna Shmurun , Soova Sen , Mao Lim , Shankar Venkataraman , Ju-Hyung Lee
IPC分类号： H01L21/306 , C23F1/00
CPC分类号： C23C16/4405 , C23C16/458 , C23C16/46 , H01J37/32082 , H01J37/32862 , H01L21/67103
摘要： The present invention is a method and apparatus for cleaning a chemical vapor deposition (CVD) chamber using cleaning gas energized to a plasma in a gas mixing volume separated by an electrode from a reaction volume of the chamber. In one embodiment, a source of RF power is coupled to a lid of the chamber, while a switch is used to couple a showerhead to ground terminals or the source of RF power.

59. 发明申请

US20050208759A1 Method of modifying interlayer adhesion 有权
公开(公告)号：US20050208759A1
公开(公告)日：2005-09-22
申请号：US11126910
申请日：2005-05-11
申请人： Francimar Campana Schmitt , Li-Qun Xia , Son Nguyen , Shankar Venkataraman
发明人： Francimar Campana Schmitt , Li-Qun Xia , Son Nguyen , Shankar Venkataraman
IPC分类号： C23C16/02 , C23C16/30 , C23C16/32 , C23C16/505 , C23C16/56 , H01L21/3105 , H01L21/312 , H01L21/314 , H01L21/316 , H01L21/768 , H01L21/4763 , H01L21/31
CPC分类号： H01L21/76835 , C23C16/0272 , C23C16/30 , C23C16/325 , C23C16/505 , C23C16/56 , H01L21/02126 , H01L21/02167 , H01L21/022 , H01L21/02203 , H01L21/02211 , H01L21/02274 , H01L21/0228 , H01L21/02304 , H01L21/0234 , H01L21/02351 , H01L21/3105 , H01L21/31058 , H01L21/3121 , H01L21/3148 , H01L21/31633 , H01L21/76801 , H01L21/7681 , H01L21/76825 , H01L21/76826 , H01L21/76829 , H01L21/76832
摘要： Methods are provided for processing a substrate for depositing an adhesion layer having a low dielectric constant between two low k dielectric layers. In one aspect, the invention provides a method for processing a substrate including depositing a barrier layer on the substrate, wherein the barrier layer comprises silicon and carbon and has a dielectric constant less than 4, depositing a dielectric initiation layer adjacent the barrier layer, and depositing a first dielectric layer adjacent the dielectric initiation layer, wherein the dielectric layer comprises silicon, oxygen, and carbon and has a dielectric constant of about 3 or less.

60. 发明授权

US06855484B2 Method of depositing low dielectric constant silicon carbide layers 失效
标题翻译：沉积低介电常数碳化硅层的方法
公开(公告)号：US06855484B2
公开(公告)日：2005-02-15
申请号：US10375853
申请日：2003-02-25
申请人： Francimar Campana , Srinivas Nemani , Michael Chapin , Shankar Venkataraman
发明人： Francimar Campana , Srinivas Nemani , Michael Chapin , Shankar Venkataraman
IPC分类号： C23C16/36 , H01L21/027 , H01L21/311 , H01L21/314 , H01L21/768 , C23C16/32
CPC分类号： H01L21/02167 , C23C16/36 , H01L21/02205 , H01L21/02211 , H01L21/02271 , H01L21/0234 , H01L21/0276 , H01L21/31144 , H01L21/314 , H01L21/76808 , H01L21/76813 , H01L21/76826 , H01L21/76829 , H01L21/76834 , H01L2221/1031
摘要： A method of forming a silicon carbide layer for use in integrated circuits is provided. The silicon carbide layer is formed by reacting a gas mixture comprising a silicon source, a carbon source, and a nitrogen source in the presence of an electric field. The as-deposited silicon carbide layer incorporates nitrogen therein from the nitrogen source.
摘要翻译：提供一种形成用于集成电路的碳化硅层的方法。碳化硅层通过在电场存在下使包含硅源，碳源和氮源的气体混合物反应而形成。沉积的碳化硅层从氮源中掺入氮。

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