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51. 发明申请

WO2010052565A3 METHOD FOR MANUFACTURING A SOLAR CELL WITH A TWO-STAGE DOPING 审中-公开
标题翻译：用于制造具有两级放电的太阳能电池的方法
公开(公告)号：WO2010052565A3
公开(公告)日：2012-04-26
申请号：PCT/IB2009007380
申请日：2009-11-09
申请人： CENTROTHERM PHOTOVOLTAICS AG , ESTURO-BRETON AINHOA , GEIGER MATTHIAS , KELLER STEFFEN , SCHLOSSER REINHOLD , VOYER CATHARINE , MAIER JOHANNES , BRESELGE MARTIN , MUENZER ADOLF , FRIESS TOBIAS , KUEHN TINO
发明人： ESTURO-BRETON AINHOA , GEIGER MATTHIAS , KELLER STEFFEN , SCHLOSSER REINHOLD , VOYER CATHARINE , MAIER JOHANNES , BRESELGE MARTIN , MUENZER ADOLF , FRIESS TOBIAS , KUEHN TINO
IPC分类号： H01L31/18 , H01L31/068
CPC分类号： H01L31/1804 , H01L31/022425 , Y02E10/547 , Y02P70/521
摘要： Method for manufacturing a solar cell with a two-stage doping (88, 89) including the following method steps of forming (14, 48) an oxide layer (82), which can be penetrated by a first dopant, on at least one part of the surface of a solar cell substrate (80), of forming (16; 50) an opening in the oxide layer (82) in at least one high-doping region (88) by removing (16; 50) the oxide layer (82) in this high-doping region (88), of diffusing (28) the first dopant into the at least one high- doping region (88) of the solar cell substrate (80) through the opening and of diffusing (28) the first dopant into the solar cell substrate (80) through the oxide layer (82), wherein the diffusing-in (28) through the openings and through the oxide layer (82) takes place at the same time in a common diffusion step and the solar cell substrate (80) is diffused (28) in the common diffusion step (28) in an at least partially hydrophilic state.
摘要翻译：一种用于制造具有两级掺杂（88,89）的太阳能电池的方法，包括以下方法步骤：在至少一个部分上形成（14,48）可被第一掺杂剂渗透的氧化物层（82）通过去除（16; 50）氧化物层（16; 50）在至少一个高掺杂区域（88）中在氧化物层（82）中形成（16; 50）开口的太阳能电池基板（80）的表面; 82）在该高掺杂区域（88）中通过开口将第一掺杂剂扩散（28）至太阳能电池基板（80）的至少一个高掺杂区域（88）并扩散（28）第一掺杂剂通过氧化物层（82）进入太阳能电池基板（80），其中通过开口和通过氧化物层（82）的扩散（28）在公共扩散步骤中同时进行，并且太阳能电池基板（80）在共同扩散步骤（28）中以至少部分亲水状态扩散（28）。

52. 发明申请

WO2009033674A3 METHOD AND APPARATUS FOR THERMALLY CONVERTING METALLIC PRECURSOR LAYERS INTO SEMICONDUCTING LAYERS, AND ALSO SOLAR MODULE 审中-公开
标题翻译：将金属前驱体层转换成半导体层的方法和装置，以及太阳能模块
公开(公告)号：WO2009033674A3
公开(公告)日：2009-05-22
申请号：PCT/EP2008007466
申请日：2008-09-11
申请人： CENTROTHERM PHOTOVOLTAICS AG , SCHMID DIETER , LENZ REINHARD , HARTUNG ROBERT MICHAEL
发明人： SCHMID DIETER , LENZ REINHARD , HARTUNG ROBERT MICHAEL
IPC分类号： C23C14/06 , C23C14/56 , C23C14/58
CPC分类号： C23C14/228 , C03C17/22 , C23C14/0623 , C23C14/50 , C23C14/541 , C23C14/564 , C23C14/5806
摘要： The present invention concerns a method for thermally converting metallic precursor layers on substrates into semiconducting layers, and also an apparatus for carrying out the method and for producing solar modules on substrates. The invention is based on the object of providing an accelerated and simple-to-realize fast method for thermally converting metallic layers on any desired substrates into semiconducting layers, and also an apparatus suitable for carrying out the method and serving for producing solar modules with high efficiency. This is achieved by virtue of the fact that the substrates (4) previously prepared at least with a metallic precursor layer (10) are heated in a furnace (1), which is segmented into a plurality of temperature regions, at a pressure at approximately atmospheric ambient pressure in a plurality of steps in each case to a predetermined temperature up to the end temperature between 400°C and 600°C and are converted into semiconducting layers whilst maintaining the end temperature in an atmosphere comprising a mixture of a carrier gas and vaporous chalcogens.
摘要翻译：本发明涉及一种将基板上的金属前驱体层热转换为半导体层的方法，还涉及用于在衬底上制造太阳能电池组件的方法和装置。本发明的目的是提供一种用于将任何所需衬底上的金属层热转换成半导体层的加速且简单实现的快速方法，以及适用于实施该方法并用于生产具有高的效率。这通过以下事实来实现：预先制备的至少具有金属前体层（10）的基板（4）在炉（1）中被加热，炉子（1）被分段成多个温度区域，大约大气环境压力在各种情况下在多个步骤中达到预定温度，直到在400℃至600℃之间的终止温度，并转化为半导体层，同时将终端温度保持在包含载气和气态硫属元素

53. 发明授权

US08460468B2 Device for doping, deposition or oxidation of semiconductor material at low pressure 有权
标题翻译：用于在低压下掺杂，沉积或氧化半导体材料的装置
公开(公告)号：US08460468B2
公开(公告)日：2013-06-11
申请号：US13564126
申请日：2012-08-01
申请人： Alexander Piechulla , Claus Rade , Robert Michael Hartung
发明人： Alexander Piechulla , Claus Rade , Robert Michael Hartung
IPC分类号： C23C16/455 , C23F1/00 , H01L21/306 , C23C16/06 , C23C16/22
CPC分类号： C30B31/16 , C30B31/10 , F27B17/0025 , H01L21/67098 , H01L21/67103 , H01L21/67109 , H01L21/67115 , H01L21/67757
摘要： A device for doping, deposition or oxidation of semiconductor material at low pressure in a process tube, is provided with a tube closure as well as devices for supplying and discharging process gases and for generating a negative pressure in the process tube. A closure of the process chamber that is gas tight with respect to the process gases and the vacuum tight seal of the end of the tube closure are spatially separated from each other in relation to the atmosphere and are arranged on a same side of the process tube in such a manner that a bottom of a stopper, sealing the process chamber, rests against a sealing rim of the process tube and the tube closure end is sealed vacuum tight by a collar, which is attached to the process tube and against which a door rests sealingly.
摘要翻译：在处理管中用于在低压下掺杂，沉积或氧化半导体材料的装置设置有管闭合件以及用于供给和排出工艺气体并在工艺管中产生负压的装置。相对于处理气体气密的处理室的封闭件和管封闭端的真空密封密封件相对于大气在空间上彼此分离，并且布置在处理管的同一侧以使密封处理室的止动器的底部靠在处理管的密封边缘上并且管封闭端被密封件密封，所述套环附接到处理管并且与其对应的门密封地休息

54. 发明申请

US20130025539A1 DEVICE FOR DOPING, DEPOSITION OR OXIDATION OF SEMICONDUCTOR MATERIAL AT LOW PRESSURE 有权
标题翻译：用于在低压下掺杂，沉积或氧化半导体材料的装置
公开(公告)号：US20130025539A1
公开(公告)日：2013-01-31
申请号：US13564126
申请日：2012-08-01
申请人： Alexander PIECHULLA , Claus Rade , Robert Michael Hartung
发明人： Alexander PIECHULLA , Claus Rade , Robert Michael Hartung
IPC分类号： H01L21/30
CPC分类号： C30B31/16 , C30B31/10 , F27B17/0025 , H01L21/67098 , H01L21/67103 , H01L21/67109 , H01L21/67115 , H01L21/67757
摘要： A device for doping, deposition or oxidation of semiconductor material at low pressure in a process tube, is provided with a tube closure as well as devices for supplying and discharging process gases and for generating a negative pressure in the process tube. A closure of the process chamber that is gas tight with respect to the process gases and the vacuum tight seal of the end of the tube closure are spatially separated from each other in relation to the atmosphere and are arranged on a same side of the process tube in such a manner that a bottom of a stopper, sealing the process chamber, rests against a sealing rim of the process tube and the tube closure end is sealed vacuum tight by a collar, which is attached to the process tube and against which a door rests sealingly.
摘要翻译：在处理管中用于在低压下掺杂，沉积或氧化半导体材料的装置设置有管闭合件以及用于供给和排出工艺气体并在工艺管中产生负压的装置。相对于处理气体气密的处理室的封闭件和管封闭端的真空密封密封件相对于大气在空间上彼此分离，并且布置在处理管的同一侧以使密封处理室的止动器的底部靠在处理管的密封边缘上并且管封闭端被密封件密封，所述套环附接到处理管并且与其对应的门密封地休息

55. 发明申请

US20130014819A1 METHOD FOR DOPING A SEMICONDUCTOR SUBSTRATE, AND SOLAR CELL HAVING TWO-STAGE DOPING 审中-公开
标题翻译：用于掺杂半导体衬底的方法和具有两阶段掺杂的太阳能电池
公开(公告)号：US20130014819A1
公开(公告)日：2013-01-17
申请号：US13582499
申请日：2011-03-03
申请人： Andreas Teppe , Matthias Geiger , Reinhold Schlosser , Adolf Muenzer , Jan Schoene , Joerg Isenberg , Tino Kuehn , Steffen Keller
发明人： Andreas Teppe , Matthias Geiger , Reinhold Schlosser , Adolf Muenzer , Jan Schoene , Joerg Isenberg , Tino Kuehn , Steffen Keller
IPC分类号： H01L31/0236 , H01L31/18
CPC分类号： H01L31/068 , H01L21/02587 , H01L21/02675 , H01L21/268 , H01L31/1804 , H01L31/1872 , Y02E10/547 , Y02P70/521
摘要： A method for doping a semiconductor substrate includes heating the semiconductor substrate by irradiation with laser radiation and at the same time diffusing dopant from a dopant source into the semiconductor substrate in heated regions. The semiconductor substrate is heated by the irradiation with laser radiation. A surface portion of the semiconductor substrate that is less than 10% of the total surface of all irradiated regions is melted and recrystallized. There is also provided a solar cell.
摘要翻译：掺杂半导体衬底的方法包括通过用激光辐射照射加热半导体衬底，并且同时将掺杂剂从掺杂剂源扩散到加热区域中的半导体衬底中。通过激光辐射照射来加热半导体衬底。半导体衬底的表面部分小于所有照射区域的总表面的10％，熔化并重结晶。还提供了太阳能电池。

56. 发明授权

US08043946B2 Mixture for doping semiconductors 失效
标题翻译：掺杂半导体的混合物
公开(公告)号：US08043946B2
公开(公告)日：2011-10-25
申请号：US11916538
申请日：2006-05-31
申请人： Daniel Biro , Catherine Voyer , Harald Wanka , Jörg Koriath
发明人： Daniel Biro , Catherine Voyer , Harald Wanka , Jörg Koriath
IPC分类号： H01L21/04 , H01L21/38 , H01L21/02 , H01L21/316 , C09K17/40 , C09K17/02
CPC分类号： H01L21/2225 , C30B31/04 , H01L21/228 , H01L29/167
摘要： A doping mixture for coating semiconductor substrates which are then subjected to a high temperature treatment to form a doped layer includes at least one p- or n-dopant, water and a mixture of two or more surfactants. At least one of the surfactants is nonionic. Also, provided are a method for producing such a doping mixture and the use thereof.
摘要翻译：用于涂覆半导体衬底的掺杂混合物，其然后进行高温处理以形成掺杂层包括至少一种p-或n-掺杂剂，水和两种或更多种表面活性剂的混合物。至少一种表面活性剂是非离子的。此外，提供了这种掺杂混合物的制造方法及其用途。

57. 发明申请

US20110017283A1 METHOD AND APPARATUS FOR DEPOSITION OF A LAYER OF AN INDIUM CHALCOGENIDE ONTO A SUBSTRATE 审中-公开
标题翻译：用于沉积碱性金属螯合物层的方法和装置
公开(公告)号：US20110017283A1
公开(公告)日：2011-01-27
申请号：US12843431
申请日：2010-07-26
申请人： ANDREAS KAMPMANN , IMMO KÖTSCHAU , DIETER SCHMID , DAVID WILLIAM SHEEL
发明人： ANDREAS KAMPMANN , IMMO KÖTSCHAU , DIETER SCHMID , DAVID WILLIAM SHEEL
IPC分类号： H01L31/0264 , H01L31/18 , C23C14/24
CPC分类号： H01L31/0322 , C23C16/305 , C23C16/45595 , C23C16/54 , H01L31/0749 , H01L31/18 , H01L31/1852 , Y02E10/541 , Y02E10/544 , Y02P70/521
摘要： A method deposits a layer of an indium chalcogenide onto a substrate. The method includes the steps of: providing an indium source in a reaction zone, providing a gaseous source of a chalcogen in the reaction zone, and heating the substrate. Thereby in the reaction zone, at a pressure of approximately atmospheric ambient pressure, the indium originating from the indium source and the chalcogen originating from the source of a chalcogen are converted to an indium chalcogenide being deposited onto the surface of the substrate.
摘要翻译：一种方法是在衬底上沉积一层铟硫属化物。该方法包括以下步骤：在反应区中提供铟源，在反应区中提供硫属元素的气态源，并加热基底。因此，在反应区域中，在大气环境压力的压力下，源自铟源的铟和来自硫属元素源的硫属元素转化为沉积在基底表面上的铟硫族化物。

58. 发明申请

US20090133628A1 VACUUM DEVICE FOR CONTINUOUS PROCESSING OF SUBSTRATES 审中-公开
标题翻译：用于连续处理基板的真空装置
公开(公告)号：US20090133628A1
公开(公告)日：2009-05-28
申请号：US12255750
申请日：2008-10-22
申请人： Roland DAHL , Josef Haase , Moritz Heintze , Thomas Pernau , Hans Reichart , Harald Wanka , Jan-Dirk Kaehler , Reinhard Lenz , Dieter Zernickel , Robert Michael Hartung
发明人： Roland DAHL , Josef Haase , Moritz Heintze , Thomas Pernau , Hans Reichart , Harald Wanka , Jan-Dirk Kaehler , Reinhard Lenz , Dieter Zernickel , Robert Michael Hartung
IPC分类号： C23C16/54
CPC分类号： C23C16/458 , H01L21/67742
摘要： A continuous vacuum system for processing substrates has an inlet air lock, an outlet air lock, at least one process chamber, and a device for conveying the substrates through the continuous system. To create a continuous system having a compact design and high throughput for plasma-enhanced treatment of substrates at a reduced pressure, which ensures a simple, rapid and secure handling of the substrates with a high capacity of the substrate carrier, the conveying device has at least one plasma boat in which the substrates are arranged on a base plate in a three-dimensional stack in at least one plane at a predefined distance from one another with intermediate carriers in between. At least the intermediate carriers are made of graphite or another suitable electrically conductive material and can be acted upon electrically with an alternating voltage via an electric connection.
摘要翻译：用于处理衬底的连续真空系统具有入口气锁，出口气锁，至少一个处理室和用于通过连续系统输送衬底的装置。为了创建具有紧凑设计和高通量的连续系统，用于在减压下等离子体增强处理基板，这确保了基板载体具有高容量的基板的简单，快速和可靠的处理，输送装置具有至少一个等离子体船，其中基板在至少一个平面中以三维堆叠的基板布置在彼此以预定距离彼此间隔开的中间载体。至少中间载体由石墨或其它合适的导电材料制成，并且可以通过电连接与交流电压电连接。

59. 发明申请

US20090071535A1 ANTIREFLECTIVE COATING ON SOLAR CELLS AND METHOD FOR THE PRODUCTION OF SUCH AN ANTIREFLECTIVE COATING 审中-公开
标题翻译：太阳能电池的抗反射涂层和生产这种抗反射涂层的方法
公开(公告)号：US20090071535A1
公开(公告)日：2009-03-19
申请号：US12090534
申请日：2006-11-02
申请人： Rainer Moeller , Robert Michael Hartung , Harald Wanka
发明人： Rainer Moeller , Robert Michael Hartung , Harald Wanka
IPC分类号： H01L31/00
CPC分类号： H01L31/02168 , Y02E10/50
摘要： Disclosed is an antireflective coating on solar cells made of crystalline silicon as well as a method for producing such an antireflective coating. The aim is to create an antireflective coating on solar cells made of crystalline silicon which makes it possible to optimize the optical and passivating properties thereof while making it possible to easily and economically integrate the production thereof into the production process especially of very thin crystalline silicon solar cells. The antireflective coating is composed of successive partial layers, i.e., a lower partial layer which covers the crystalline silicon, is embodied as an antireflective coating and as passivation with a particularly great hydrogen concentration, and is covered by an upper partial layer having an increased barrier effect against hydrogen diffusion.
摘要翻译：公开了由结晶硅制成的太阳能电池上的抗反射涂层以及制造这种抗反射涂层的方法。目的是在由晶体硅制成的太阳能电池上制造抗反射涂层，使得可以优化其光学和钝化性能，同时使得其可以容易且经济地将其生产整合到生产过程中，特别是非常薄的晶体硅太阳能细胞。抗反射涂层由连续的部分层组成，即覆盖晶体硅的较低部分层，被实施为抗反射涂层和具有特别大的氢浓度的钝化，并被具有增加的屏障的上部部分层覆盖对氢扩散的作用。

60. 发明申请

WO2014198912A1 MESSOBJEKT, VERFAHREN ZUR HERSTELLUNG DESSELBEN UND VORRICHTUNG ZUM THERMISCHEN BEHANDELN VON SUBSTRATEN 审中-公开
标题翻译：测量对象，工艺用于生产热处理基板相同，DEVICE
公开(公告)号：WO2014198912A1
公开(公告)日：2014-12-18
申请号：PCT/EP2014/062408
申请日：2014-06-13
申请人： CENTROTHERM PHOTOVOLTAICS AG
发明人： ZERNICKEL, Dieter , MUELLER, Steffen
IPC分类号： G01J5/08 , G01J5/00 , G01J5/52 , F28F13/18 , H01L21/67
CPC分类号： G01J5/08 , F28F13/185 , G01J5/0007 , G01J5/0887 , G01J5/522 , H01L21/67115 , H01L21/68735 , H01L21/6875
摘要： Es ist ein Messobjekt (12) zum Einsatz in einer Heizanlage zum thermischen Behandeln von Substraten beschrieben, wobei das Messobjekt das zu behandelnde Substrat ist oder im Einsatz eine im Wesentlichen bekannte Temperaturbeziehung zum zu behandelnden Substrat besitzt, wobei das Messobjekt eine Oberfläche mit wenigstens einem Oberflächenbereich aufweist, der als Messfläche für eine optische Temperaturmessung dient und in dem eine Struktur (30) in Form einer Vielzahl von Vertiefungen (35) ausgebildet ist, um die Emissivität des Oberflächenbereichs zu beeinflussen.
摘要翻译：它是一种在加热系统中使用的用于描述基板的热处理，其中，所述测量对象是所述基板的待处理或在使用具有在衬底的基本上已知的温度关系的测量（12）的对象物进行处理，其中，所述测量对象的表面与至少一个表面区域其用作光学温度测量的测量表面且在多个凹部的形式，其结构（30），（35）被设计来影响表面区域的发射率。

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