会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 41. 发明申请
    • Ceramic with hollandite structure incorporating cesium usable for packaging of radioactive cesium and its synthesis processes
    • 含有可溶于放射性铯包装的铯的铀矿结构的陶瓷及其合成方法
    • US20030139281A1
    • 2003-07-24
    • US10309838
    • 2002-12-04
    • Gilles LeturcqFlorence BartAdeline Comte
    • C04B035/465C04B035/468
    • C04B35/653C04B35/478G21F9/162G21F9/302G21F9/34
    • The invention relates to a ceramic and processes for preparation of this ceramic, the said ceramic being based on cesium with a hollandite structure with the formula AxBy(C1z1,C2z2)DtO16, in which: A represents the monovalent element Cs, possibly partly substituted by at least one other monovalent element; B represents the divalent element Ba, possibly partly substituted by at least one other divalent element, C1 represents the trivalent element aluminium, possibly partly substituted by at least one other trivalent element, C2 represents the trivalent element iron and/or chromium, possibly partly substituted by at least one other trivalent element, D represents at least one element chosen in a group consisting of tetravalent titanium, divalent, trivalent or tetravalent manganese, pentavalent niobium and pentavalent antimony and mixtures thereof, x, y, z1, z2 and t are such that: 0.1nullxnull0.5 0.5nullynull1.1 1nullz1nullz2null2.5, z1 and z2 are both not equal to zero, 5nulltnull7, Application of this invention to the confinement of radioactive cesium.
    • 本发明涉及一种陶瓷和该陶瓷的制备方法,所述陶瓷基于具有式AxBy(C1z1,C2z2)DtO16的荷兰特结构的铯,其中:A表示一价元素Cs,可能部分地被 至少一种其它单价元素; B表示可能部分被至少一个其它二价元素取代的二价元素Ba,C1表示可能部分被至少一个其它三价元素取代的三价元素铝,C2表示三价元素铁和/或铬,可能部分取代 通过至少一种其它三价元素,D表示选自四价钛,二价,三价或四价锰,五价铌和五价锑及其混合物中的至少一种元素,x,y,z1,z2和t是这样的 即:0.1 <= x <= 0.5 0.5 <= y <= 1.1 1 <= z1 + z2 <= 2.5,z1和z2都不等于零,5 <= t <= 7,本发明应用于 放射性铯的限制。
    • 45. 发明申请
    • Ferroelectric composition, ferroelectric vapor deposition target and method of making a ferroelectric vapor deposition target
    • 铁电成分,铁电体气相沉积靶和制造铁电性气相沉积靶的方法
    • US20020132721A1
    • 2002-09-19
    • US10143318
    • 2002-05-08
    • Honeywell International Inc.
    • Jianxing LiTim ScottTamara White
    • C04B035/468C04B035/472C04B035/495
    • C23C14/3414C04B35/462C23C14/08Y10S977/775Y10S977/777Y10S977/838Y10S977/891
    • The invention comprises ferroelectric vapor deposition targets and to methods of making ferroelectric vapor deposition targets. In one implementation, a ferroelectric physical vapor deposition target has a predominate grain size of less than or equal to 1.0 micron, and has a density of at least 95% of maximum theoretical density. In one implementation, a method of making a ferroelectric physical vapor deposition target includes positioning a prereacted ferroelectric powder within a hot press cavity. The prereacted ferroelectric powder predominately includes individual prereacted ferroelectric particles having a maximum straight linear dimension of less than or equal to about 100 nanometers. The prereacted ferroelectric powder is hot pressed within the cavity into a physical vapor deposition target of desired shape having a density of at least about 95% of maximum theoretical density and a predominate maximum grain size which is less than or equal to 1.0 micron. In one implementation, the prereacted ferroelectric powder is hot pressed within the cavity into a physical vapor deposition target of desired shape at a maximum pressing temperature which is at least 200null C. lower than would be required to produce a target of a first density of at least 85% of maximum theoretical density in hot pressing the same powder but having a predominate particle size maximum straight linear dimension of at least 1.0 micron at the same pressure and for the same amount of time, and a target density greater than the first density at the lower pressing temperature is achieved.
    • 本发明包括铁电气相沉积靶和制备铁电沉积靶的方法。 在一个实施方案中,铁电物理气相沉积靶具有小于或等于1.0微米的主要晶粒尺寸,并且具有至少95%的最大理论密度的密度。 在一个实施方案中,制造铁电物理气相沉积靶的方法包括将预反应的铁电粉末定位在热压腔内。 预反应的铁电粉末主要包括具有小于或等于约100纳米的最大直线尺寸的单个预反应的铁电颗粒。 将预反应的铁电粉末在空腔内热压成所需形状的物理气相沉积靶,其具有至少约95%的最大理论密度和最大粒度小于或等于1.0微米的最大粒度。 在一个实施方案中,将预反应的铁电粉末在空腔内热压成所需形状的物理气相沉积靶,其最大压制温度比产生第一密度的靶的要求低至少200℃ 在相同的压力和相同的时间量下热压相同的粉末但具有至少1.0微米的主要粒度最大直线尺寸的至少85%的最大理论密度,并且目标密度大于第一密度 在较低的压制温度下实现。
    • 48. 发明申请
    • Dielectric ceramic composition
    • 介电陶瓷组合物
    • US20040242402A1
    • 2004-12-02
    • US10487172
    • 2004-02-17
    • Kazuhiro ItoHitoshi Masumura
    • C04B035/468
    • H01Q3/44B82Y30/00C04B35/468C04B35/6262C04B35/62645C04B2235/3201C04B2235/3203C04B2235/3215C04B2235/3217C04B2235/3232C04B2235/3236C04B2235/3256C04B2235/3281C04B2235/3284C04B2235/3298C04B2235/3409C04B2235/3418C04B2235/5454C04B2235/604C04B2235/79H05K1/0306
    • It is an object of the invention to provide a dielectric ceramic composition which enables its firing temperature to be lowered and which has an excellent electrical properties, particularly temperature dependence of resonance frequencies. A dielectric ceramic composition according to the invention comprises an oxide of a barium titanate family having a composition formula represented as BaTixO2xnull1 (3.5nullxnull5.0); a first chemical element group consisting of at least one kind of alkaline-earth metals, silicon, zinc, aluminium, titanium, copper, bismuth and molybdenum; and a second chemical element group consisting of at least one kind of alkali metals and boron. A weight ratio of a total of each chemical element in the first and second chemical element groups to the oxide (the total of each chemical element/the oxide) is between 45/55 and 65/35 inclusive when the ratio is determined by converting said each chemical element to its oxide. A weight ratio of the second chemical element group to the first chemical element group (the second chemical element group/the first chemical element group) is between 0.01 and 0.10 inclusive when the ratio is determined by converting said each chemical element to its oxide.
    • 本发明的目的是提供一种使其烧成温度降低并且具有优异的电特性,特别是共振频率的温度依赖性的电介质陶瓷组合物。 根据本发明的电介质陶瓷组合物包含具有表示为BaTixO 2 x + 1(3.5 <= x <= 5.0)的组成式的钛酸钡族的氧化物; 由至少一种碱土金属,硅,锌,铝,钛,铜,铋和钼组成的第一化学元素组; 和由至少一种碱金属和硼组成的第二化学元素基团。 当第一和第二化学元素基团中的每个化学元素与氧化物的总量(每个化学元素/氧化物的总和)的重量比在45/55和65/35之间时,包括当通过将所述 每个化学元素与其氧化物。 当通过将所述每种化学元素转化为其氧化物来确定该比率时,第二化学元素基团与第一化学元素基团(第二化学元素基团/第一化学元素基团)的重量比在0.01和0.10之间。
    • 49. 发明申请
    • Dielectric material including particulate filler
    • 介电材料包括颗粒填料
    • US20040109298A1
    • 2004-06-10
    • US10644386
    • 2003-08-19
    • William F. HartmanKirk M. SlenesKristen J. Law
    • C04B035/468
    • H05K1/162B32B27/00H05K3/4611H05K3/4688H05K2201/0209H05K2201/0257H05K2201/0317H05K2201/09309
    • A dielectric substrate useful in the manufacture of printed wiring boards is disclosed wherein the dielectric substrate comprises at least one organic polymer having a Tg greater than 140null C. and at least one filler material. The dielectric substrate of this invention has a dielectric constant that varies less than 15% over a temperature range of from null55 to 125null C. Additionally, a method for producing integral capacitance components for inclusion within printed circuit boards. Hydrothermally prepared nanopowders permit the fabrication of very thin dielectric layers that offer increased dielectric constants and are readily penetrated by microvias. Disclosed is a method of preparing a slurry or suspension of a hydrothermally prepared nanopowder and solvent. A suitable bonding material, such as a polymer is mixed with the nanopowder slurry, to generate a composite mixture that is formed into a dielectric layer. The dielectric layer may be placed upon a conductive layer prior to curing, or conductive layers may be applied upon a cured dielectric layer, either by lamination or by metallization processes, such as vapor deposition or sputtering.
    • 公开了一种用于制造印刷线路板的电介质基片,其中电介质基片包括Tg大于140℃的至少一种有机聚合物和至少一种填料。 本发明的电介质基板的介电常数在-55〜125℃的温度范围内变化小于15%。另外,制造用于包含在印刷电路板内的积分电容元件的方法。 水热制备的纳米粉末允许制造非常薄的介电层,其提供增加的介电常数并且容易被微孔穿透。 公开了制备水热制备的纳米粉末和溶剂的浆料或悬浮液的方法。 将合适的粘合材料,例如聚合物与纳米粉末浆料混合,以产生形成介电层的复合混合物。 介电层可以在固化之前放置在导电层上,或者可以通过层压或通过金属化工艺,例如气相沉积或溅射将导电层施加在固化的介电层上。