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    • 2. 发明申请
    • X7R DIELECTRIC COMPOSITION
    • X7R介电组合物
    • US20040229746A1
    • 2004-11-18
    • US10440051
    • 2003-05-16
    • Ferro Corporation
    • Hyun ParkDaniel E. McCauleyMike S. H. Chu
    • C04B035/468
    • C04B35/4682B32B2311/22C03C3/091C03C8/02C03C8/14C04B35/63416C04B35/638C04B35/64C04B2235/3206C04B2235/3208C04B2235/3217C04B2235/3224C04B2235/3225C04B2235/3263C04B2235/3409C04B2235/3418C04B2235/365C04B2235/5445C04B2235/6025C04B2235/652C04B2235/6584C04B2235/663C04B2235/785C04B2237/346C04B2237/405H01G4/1227H01G4/30
    • Multilayer ceramic chip capacitors which satisfy X7R requirements and which are compatible with reducing-atmosphere sintering conditions so that non-noble metals such as nickel, copper, and alloys thereof may be used for internal and external electrodes are made in accordance with the invention. The capacitors exhibit desirable dielectric properties (high capacitance, low dissipation factor, high insulation resistance), excellent performance on highly accelerated life testing, and very good resistance to dielectric breakdown. The dielectric layers preferably contain BaTiO3 as the major component and Mn3O4, Y2O3, Ho2O3, CaCO3, SiO2, B2O3, Al2O3, MgO, and CaO as minor constituents. They are batched in a proportion that there are preferably present 99.00 to 98.5 wt. % BaTiO3, 0.336 to 0.505 wt. % Mn3O4, 0.198 to 0.296 wt. % Y2O3, 0.132 to 0.198 wt. % Ho2O3, 0.199 to 0.299 wt. % CaCO3, 0.057 to 0.085 wt. % SiO2, 0.039 to 0.058 wt. % B2O3, 0.018 to 0.027 wt. % Al2O3, 0.016 to 0.025 wt. % MgO and 0.005 to 0.007 wt. % CaO. The B2O3, SiO2, MgO, Al2O3, and CaO are preferably present in the form of pre-reacted glass. The preferred form of the invention may be sintered in the temperature range 1,200 to 1,300null C. in a reducing atmosphere. Additionally, a re-oxidation procedure may be utilized during the sintering cycle to optimize the resistance of the ceramic to dielectric breakdown.
    • 根据本发明制备满足X7R要求并且与还原气氛烧结条件兼容的多层陶瓷片式电容器,以使非贵金属如镍,铜及其合金可用于内部和外部电极。 电容器表现出所需的介电特性(高电容,低损耗因数,高绝缘电阻),在高速加速寿命测试中具有出色的性能,以及非常好的耐电介质击穿性能。 介电层优选以BaTiO3为主要成分,Mn3O4,Y2O3,Ho2O3,CaCO3,SiO2,B2O3,Al2O3,MgO,CaO为次要成分。 它们的分批比例优选为99.00至98.5重量%。 %BaTiO 3,0.336〜0.505wt。 %Mn 3 O 4,0.198〜0.296重量% %Y 2 O 3,0.132〜0.198重量% %Ho2O3,0.199〜0.299wt。 %CaCO 3,0.057〜0.085重量% %SiO 2,0.039〜0.058重量% %B 2 O 3,0.018〜0.027重量% %Al 2 O 3,0.016〜0.025重量% %MgO和0.005〜0.007wt。 %CaO。 B 2 O 3,SiO 2,MgO,Al 2 O 3和CaO优选以预反应玻璃的形式存在。 本发明的优选形式可以在还原气氛中在1200至1300℃的温度范围内烧结。 此外,可以在烧结循环期间利用再氧化工艺来优化陶瓷对绝缘击穿的电阻。
    • 7. 发明申请
    • Dielectric ceramic composition and ceramic capacitor
    • 介电陶瓷组合物和陶瓷电容器
    • US20020016247A1
    • 2002-02-07
    • US09893701
    • 2001-06-29
    • Youichi MizunoHisamitsu ShizunoKenji SaitoYasunobu Kawamoto
    • C03C014/00C04B035/468
    • C04B35/468
    • The ceramic capacitor in accordance with the present invention is fabricated by employing a dielectric ceramic composition in forming dielectric layers thereof, wherein the dielectric ceramic composition contains an oxide of Ba and Ti, an oxide of Re (Re used herein represents one or more rare-earth elements selected from Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Tb and Y), an oxide of Mg, one or more oxides selected from oxides of Mn, V and Cr, an oxide of Mo and/or W and SiO2 or a glass component including SiO2, wherein the amount of the oxide of Ba and Ti is 100 mol % in terms of BaTiO3, the amount of the oxide of Re is 0.25 to 1.5 mol % in terms of Re2O3, the amount of the oxide of Mg is 0.2 to 1.5 mol % in terms of MgO and the amount of one or more oxides of Mn, V or Cr is 0.03 to 0.6 mol % in terms of Mn2O3, V2O5, Cr2O3, respectively, and the amount of the oxide of Mo and/or W is 0.025 to 0.25 mol % in terms of MoO3 and WO3.
    • 根据本发明的陶瓷电容器是通过在介电层中形成电介质陶瓷组合物来制造的,其中介电陶瓷组合物含有Ba和Ti的氧化物,Re(Re)的氧化物表示一种或多种稀有金属, 选自Sm,Eu,Gd,Tb,Dy,Ho,Er,Tm,Tb和Y的地球元素),Mg的氧化物,选自Mn,V和Cr的氧化物中的一种或多种氧化物,Mo和/ 或W和SiO 2或包含SiO 2的玻璃组分,其中Ba和Ti的氧化物的量以BaTiO 3换算为100mol%,Re的氧化物的量以Re 2 O 3换算为0.25至1.5mol%,量 的Mg的氧化物为0.2〜1.5摩尔%,Mn,V或Cr的一种以上的氧化物的含量分别为Mn 2 O 3,V 2 O 5,Cr 2 O 3为0.03〜0.6摩尔% Mo和/或W的氧化物以MoO 3和WO 3换算为0.025〜0.25摩尔%。
    • 8. 发明申请
    • Dielectric ceramics and electronic component
    • 介电陶瓷和电子元件
    • US20020013213A1
    • 2002-01-31
    • US09835492
    • 2001-04-17
    • TDK CORPORATION
    • Shigeki SatoYoshihiro TeradaYoshinori Fujikawa
    • C04B035/468
    • H01G4/1227
    • Provided are dielectric ceramics and an electronic component capable of enhancing the longevity of insulation resistance under load at high temperature, namely, the so-called lifetime of IR degradation. A dielectric layer comprises dielectric ceramics containing BaTiO3 that is a main component; a first auxiliary component containing at least one element in a group consisting of Mg, Ca, Ba, Sr and Cr; a second auxiliary component containing SiO2; a third auxiliary component containing at least one element in a group consisting of V, Mo and W; and a fourth auxiliary component containing at least one element in a group consisting of Er, Tm, Yb, Y, Dy and Ho. Preferably, the rate of existence of crystal particles having voids in the dielectric ceramics is 10% or lower in terms of the count rate, and an average crystal particle diameter is more than 0.1 nullm and not more than 0.7 nullm. Thus, the lifetime of IR degradation is improved. Preferably, BaTiO3 powders synthesized by oxalate process or solid phase method and having a Ba/Ti ratio of more than 1 and less than 1.007 are used as a raw material.
    • 提供了电介质陶瓷和能够提高耐高温下的负载下的绝缘电阻的寿命的电子部件,即所谓的IR降解的寿命。 电介质层包含作为主要成分的含有BaTiO 3的电介质陶瓷; 包含由Mg,Ca,Ba,Sr和Cr组成的组中的至少一种元素的第一辅助组分; 含有SiO 2的第二辅助组分; 包含由V,Mo和W组成的组中的至少一种元素的第三辅助组分; 以及包含由Er,Tm,Yb,Y,Dy和Ho组成的组中的至少一种元素的第四辅助成分。 优选地,在电介质陶瓷中具有空隙的晶体颗粒的存在速率以计数率计为10%以下,平均结晶粒径为0.1μm以上且0.7μm以下。 因此,IR降解的寿命得到改善。 优选使用通过草酸盐法或固相法合成并具有大于1且小于1.007的Ba / Ti比的BaTiO 3粉末作为原料。
    • 9. 发明申请
    • BARIUM TITANATE SEMICONDUCTOR CERAMIC
    • 钛酸钡半导体陶瓷
    • US20010008866A1
    • 2001-07-19
    • US09157062
    • 1998-09-18
    • MITSUTOSHI KAWAMOTOHIDEAKI NIIMIRYOUICHI URAHARAYUKIO SAKABE
    • C04B035/468
    • B82Y30/00C01G23/006C01P2002/50C01P2002/76C01P2002/77C01P2004/62C01P2004/64C04B35/4682
    • The present invention provides barium titanate semiconductive ceramic having low specific resistance at room temperature and high withstand voltage, which fully satisfies the demand for enhancing withstand voltage. The average ceramic grain size of the barium titanate semiconductive ceramic is controlled to about 0.9 nullm or less. By this control, the ceramic possesses low specific resistance at room temperature and high withstand voltage fully satisfying a recent demand for enhancing withstand voltage and may suitably used for applications such as controlling temperature and limiting current, or in exothermic devices for constant temperature. Accordingly, the barium titanate semiconductive ceramic enables an apparatus using the same to have enhanced performance and reduced size.
    • 本发明提供了在室温下具有低电阻率和高耐受电压的钛酸钡半导体陶瓷,其完全满足提高耐电压的要求。 钛酸钡半导体陶瓷的平均陶瓷粒径控制在0.9μm以下。 通过该控制,陶瓷在室温下具有低的电阻率和高耐受电压,完全满足了近来对提高耐受电压的要求,并且可以适用于诸如控制温度和限制电流的应用,或用于恒温的放热装置中。 因此,钛酸钡半导体陶瓷使得能够使用其的装置具有增强的性能和减小的尺寸。
    • 10. 发明申请
    • Ceramic composition and method
    • 陶瓷成分及方法
    • US20040220044A1
    • 2004-11-04
    • US10425161
    • 2003-04-29
    • Jeffrey R. JacquinRandy E. Rose
    • C04B035/468
    • H01P1/2056C04B35/4686H05K1/0306
    • A ceramic material suitable for use as a microwave band filter for telecommunications equipment comprises oxides of titanium, barium, neodymium, samarium, and optionally, bismuth, and containing, on an elemental weight basis: about 28 to about 31 weight % titanium, about 19 to about 21 weight % barium, about 11 to about 18 weight % samarium, about 7 to about 13 weight % neodymium, up to about 3 weight % of bismuth, and the remainder substantially being oxygen. The ceramic compositions have a resonant frequency, f, in the range of about 2000 MHz to about 2300 MHz, a quality factor, Q, of at least about 4000, a dielectric constant, K, in the range of about 50 to about 70, and a temperature coefficient of resonant frequency, Tf, in the range of about 0 ppm to about null20 ppm. Calcined metal oxide powders useful for preparing the microwave ceramic materials, a method of making the ceramic materials, and devices containing the ceramic materials are also described.
    • 适合用作通信设备的微波带滤波器的陶瓷材料包括钛,钡,钕,钐和任选的铋的氧化物,并且以元素重量计含有约28至约31重量%的钛,约19 至约21重量%的钡,约11至约18重量%的钐,约7至约13重量%的钕,至多约3重量%的铋,其余基本上是氧。 陶瓷组合物具有在约2000MHz至约2300MHz的范围内的谐振频率f,至少约4000的品质因数Q,介电常数K在约50至约70的范围内, 和共振频率Tf在约0ppm至约+20ppm的范围内的温度系数。 还描述了可用于制备微波陶瓷材料的煅烧金属氧化物粉末,制备陶瓷材料的方法以及包含陶瓷材料的装置。