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41. 发明授权

US07826182B2 Current-perpendicular-to-the-plane (CPP) magnetoresistive sensor with CoFeGe ferromagnetic layers 有权
标题翻译：具有CoFeGe铁磁层的电流垂直平面（CPP）磁阻传感器
公开(公告)号：US07826182B2
公开(公告)日：2010-11-02
申请号：US11781576
申请日：2007-07-23
申请人： Matthew J. Carey , Jeffrey R. Childress , Stefan Maat
发明人： Matthew J. Carey , Jeffrey R. Childress , Stefan Maat
IPC分类号： G11B5/127
CPC分类号： H01L43/10 , B82Y25/00 , G01R33/093 , G11B5/3906 , G11B5/398 , G11B5/3983
摘要： A current-perpendicular-to-the-plane spin-valve (CPP-SV) magnetoresistive sensor has a ferromagnetic alloy comprising Co, Fe and Ge in the sensor's free layer and/or pinned layer. The sensor may be a simple pinned structure, in which case the pinned layer may be formed of the CoFeGe ferromagnetic alloy. Alternatively, the sensor may have an AP-pinned layer structure, in which case the AP2 layer may be formed of the CoFeGe ferromagnetic alloy. The Ge-containing alloy comprises Co, Fe and Ge, wherein Ge is present in the alloy in an amount between about 20 and 40 atomic percent, and wherein the ratio of Co to Fe in the alloy is between about 0.8 and 1.2. More particularly, the CoFeGe alloy may consist essentially of only Co, Fe and Ge according to the formula (CoxFe(100-x))(100-y)Gey where the subscripts represent atomic percent, x is between about 45 and 55, and y is between about 23 and 37.
摘要翻译：电流垂直于平面的自旋阀（CPP-SV）磁阻传感器在传感器的自由层和/或固定层中具有包含Co，Fe和Ge的铁磁合金。传感器可以是简单的钉扎结构，在这种情况下，被钉扎层可以由CoFeGe铁磁合金形成。或者，传感器可以具有AP钉扎层结构，在这种情况下，AP2层可以由CoFeGe铁磁合金形成。含Ge合金包括Co，Fe和Ge，其中Ge在合金中以约20至40原子％的量存在，并且其中合金中Co与Fe的比率在约0.8和1.2之间。更具体地说，CoFeGe合金基本上仅由根据式（CoxFe（100-x））（100-y）的Co，Fe和Ge组成，其中下标表示原子百分数，x在约45和55之间， y在约23和37之间。

42. 发明申请

US20100226048A1 MAGNETO-RESISTANCE EFFECT ELEMENT, MAGNETO-RESISTANCE EFFECT HEAD, MAGNETIC STORAGE AND MAGNETIC MEMORY 有权
标题翻译：磁阻效应元件，磁阻效应头，磁存储和磁记忆
公开(公告)号：US20100226048A1
公开(公告)日：2010-09-09
申请号：US11525076
申请日：2006-09-22
申请人： Hideaki Fukuzawa , Masahiro Takashita , Hiromi Yuasa , Yoshihiko Fuji , Hitoshi Iwasaki
发明人： Hideaki Fukuzawa , Masahiro Takashita , Hiromi Yuasa , Yoshihiko Fuji , Hitoshi Iwasaki
IPC分类号： G11B5/127
CPC分类号： H01L43/08 , B82Y25/00 , G01R33/093 , G11B5/3906 , G11B5/3983 , G11C11/161 , H01F10/3259 , H01F10/3272 , H01F10/3281 , H01F10/3295 , H01L27/224 , H01L27/228 , H01L43/12 , Y10T428/1121
摘要： A magneto-resistance effect element, a magneto-resistance effect head, a magnetic storage and a magnetic memory, in which noise caused by a spin-transfer torque is reduced, are provided. In a fixed magnetization layer or a free magnetization layer of a magneto-resistance effect element including the fixed magnetization layer, a spacer layer and the free magnetization layer; a layer containing one element selected from the group consisting of Ti, Zr, Nb, Mo, Ru, Rh, Pd, Ag, La, Hf, Ta, W, Re, Os, Ir, Pt and Au is disposed.
摘要翻译：提供了由旋转传递转矩引起的噪声减小的磁阻效应元件，磁阻效应头，磁存储器和磁存储器。在包括固定磁化层，间隔层和自由磁化层的磁阻效应元件的固定磁化层或自由磁化层中; 设置包含选自Ti，Zr，Nb，Mo，Ru，Rh，Pd，Ag，La，Hf，Ta，W，Re，Os，Ir，Pt和Au中的一种元素的层。

43. 发明申请

US20100091415A1 Method for manufacturing a magneto-resistance effect element and magnetic recording and reproducing apparatus 有权
标题翻译：制造磁阻效应元件和磁记录和重放装置的方法
公开(公告)号：US20100091415A1
公开(公告)日：2010-04-15
申请号：US12585854
申请日：2009-09-25
申请人： Hiromi Yuasa , Hideaki Fukuzawa , Yoshihiko Fuji , Shuichi Murakami , Michiko Hara , Kunliang Zhang , Min Li , Erhard Schreck
发明人： Hiromi Yuasa , Hideaki Fukuzawa , Yoshihiko Fuji , Shuichi Murakami , Michiko Hara , Kunliang Zhang , Min Li , Erhard Schreck
IPC分类号： G11B5/33 , B01J19/08
CPC分类号： G01R33/093 , B82Y25/00 , B82Y40/00 , G11B5/3906 , G11B5/398 , G11B5/3983 , H01F10/3259 , H01F10/3272 , H01F41/307 , H01L43/08 , H01L43/12
摘要： A method for manufacturing a magneto-resistance effect element is provided. The magneto-resistance effect element includes a first magnetic layer including a ferromagnetic material, a second magnetic layer including a ferromagnetic material and a spacer layer provided between the first magnetic layer and the second magnetic layer, the spacer layer having an insulating layer and a conductive portion penetrating through the insulating layer. The method includes: forming a film to be a base material of the spacer layer; performing a first treatment using a gas including at least one of oxygen molecules, oxygen atoms, oxygen ions, oxygen plasma and oxygen radicals on the film; and performing a second treatment using a gas including at least one of nitrogen ions, nitrogen atoms, nitrogen plasma, and nitrogen radicals on the film submitted to the first treatment.
摘要翻译：提供一种制造磁阻效应元件的方法。磁阻效应元件包括包括铁磁材料的第一磁性层，包括铁磁材料的第二磁性层和设置在第一磁性层和第二磁性层之间的间隔层，间隔层具有绝缘层和导电部分穿透绝缘层。该方法包括：将膜形成为间隔层的基材; 使用包含氧分子，氧原子，氧离子，氧等离子体和氧自由基中的至少一种的气体进行第一处理; 以及使用包含氮离子，氮原子，氮等离子体和氮自由基中的至少一种的气体进行第一次处理的膜的第二处理。

44. 发明申请

US20100091414A1 Method for manufacturing a magneto-resistance effect element and magnetic recording and reproducing apparatus 审中-公开
标题翻译：制造磁阻效应元件和磁记录和重放装置的方法
公开(公告)号：US20100091414A1
公开(公告)日：2010-04-15
申请号：US12585851
申请日：2009-09-25
申请人： Hiromi Yuasa , Hideaki Fukuzawa , Yoshihiko Fuji , Shuichi Murakami , Michiko Hara , Kunliang Zhang , Min Li , Erhard Schreck
发明人： Hiromi Yuasa , Hideaki Fukuzawa , Yoshihiko Fuji , Shuichi Murakami , Michiko Hara , Kunliang Zhang , Min Li , Erhard Schreck
IPC分类号： G11B5/33 , B05D3/04 , B05D3/02
CPC分类号： G11B5/3983 , B82Y10/00 , B82Y25/00 , B82Y40/00 , G01R33/093 , G11B5/3163 , G11B5/3906 , G11B2005/3996 , H01F10/3259 , H01F10/3272 , H01F41/307
摘要： A method for manufacturing a magneto-resistance effect element is provided. The magneto-resistance effect element includes a first magnetic layer including a ferromagnetic material, a second magnetic layer including a ferromagnetic material and a spacer layer provided between the first magnetic layer and the second magnetic layer, the spacer layer having an insulating layer and a conductive portion penetrating through the insulating layer. The method includes: forming a film to be a base material of the spacer layer; performing a first treatment using a gas including at least one of oxygen molecules, oxygen atoms, oxygen ions, oxygen plasma and oxygen radicals on the film; and performing a second treatment using a gas including at least one of krypton ions, krypton plasma, krypton radicals, xenon ions, xenon plasma and xenon radicals on the film submitted to the first treatment.
摘要翻译：提供一种制造磁阻效应元件的方法。磁阻效应元件包括包括铁磁材料的第一磁性层，包括铁磁材料的第二磁性层和设置在第一磁性层和第二磁性层之间的间隔层，间隔层具有绝缘层和导电部分穿透绝缘层。该方法包括：将膜形成为间隔层的基材; 使用包含氧分子，氧原子，氧离子，氧等离子体和氧自由基中的至少一种的气体进行第一处理; 以及使用包含氪离子，氪等离子体，氪原子，氙离子，氙等离子体和氙自由基中的至少一种的气体进行第一处理的第二处理。

45. 发明申请

US20100027167A1 CURRENT PERPENDICULAR TO PLANE MAGNETORESISTANCE READ HEAD DESIGN USING A CURRENT CONFINEMENT STRUCTURE PROXIMAL TO AN AIR BEARING SURFACE 有权
标题翻译：当前对平面磁阻的正确读取头设计使用当前的约束结构接近空中轴承表面
公开(公告)号：US20100027167A1
公开(公告)日：2010-02-04
申请号：US12182701
申请日：2008-07-30
申请人： Hardayal S. Gill , Werner J. Douglas , Wipul P. Jayasekara , Wen-Chien Hsiao
发明人： Hardayal S. Gill , Werner J. Douglas , Wipul P. Jayasekara , Wen-Chien Hsiao
IPC分类号： G11B5/33
CPC分类号： G11B5/3983 , B82Y25/00 , G01R33/093 , G11B5/3912 , G11B5/3929 , G11B5/398
摘要： A current to perpendicular to plane (CPP) magnetoresistance (MR) read head using current confinement proximal to an air bearing surface (ABS) is disclosed. A CPP MR read head includes a first shield, an MR sensor formed on the first shield, and a second shield contacting the MR sensor proximal to an ABS. The CPP MR read head further includes insulating material between the MR sensor and the second shield, where the insulating material is distal to the ABS to electrically isolate the MR sensor from the second shield distal to the ABS. Sense current injected from the second shield through the MR sensor and into the first shield is confined proximal to the ABS at a location where the second shield contacts the MR sensor.
摘要翻译：公开了使用靠近空气轴承表面（ABS）的电流限制来垂直于平面（CPP）磁阻（MR）读取头的电流。 CPP MR读取头包括形成在第一屏蔽上的第一屏蔽，MR传感器和接近ABS的MR传感器的第二屏蔽。 CPP MR读取头还包括在MR传感器和第二屏蔽之间的绝缘材料，其中绝缘材料位于ABS的远侧，以将MR传感器与远离ABS的第二屏蔽电隔离。从第二屏蔽件通过MR传感器注入并进入第一屏蔽层的感应电流在第二屏蔽件接触MR传感器的位置处被限制在ABS附近。

46. 发明授权

US07646570B2 CPP read sensor having constrained current paths made of lithographically-defined conductive vias with surrounding oxidized metal sublayers and method of making same 有权
标题翻译： CPP读取传感器具有由具有周围的氧化金属子层的光刻定义的导电通孔制成的约束电流路径及其制造方法
公开(公告)号：US07646570B2
公开(公告)日：2010-01-12
申请号：US11496604
申请日：2006-07-31
申请人： Hardayal Singh Gill , Jordan Asher Katine , Alexander Zeltser
发明人： Hardayal Singh Gill , Jordan Asher Katine , Alexander Zeltser
IPC分类号： G11B5/39 , H04R31/00
CPC分类号： G11B5/398 , B82Y25/00 , B82Y40/00 , G01R33/093 , G11B5/3906 , G11B5/3983 , H01F41/306 , H01F41/308 , Y10T29/49046 , Y10T29/49052
摘要： Current-perpendicular-to-plane (CPP) read sensors having constrained current paths made of lithographically-defined conductive vias with surrounding oxidized metal sublayers, and methods of making the same, are disclosed. In one illustrative example, at least part of a sensor stack structure which includes an electrically conductive spacer layer is formed. A metal (e.g. Ta) sublayer is then deposited over and adjacent the spacer layer, followed by one of an oxidation process, a nitridation process, and an oxynitridation process, to produce an insulator (e.g. TaOx) from the metal sublayer. The metal sublayer deposition and oxidation/nitridation/oxynitridation processes are repeated as necessary to form the insulator with a suitable thickness. Next, a resist structure which exposes one or more portions of the insulator is formed over the insulator. With the resist structure in place, exposed insulator materials are removed by etching to form one or more apertures through the insulator down to the spacer layer. Electrically conductive materials are subsequently deposited within the one or more apertures to form one or more lithographically-defined conductive vias of a current-constraining structure. Advantageously, the lithographically-defined conductive vias increase the current density of the read sensor in the region of the sensing layers to thereby simultaneously increase its resistance and magnetoresistance. With use of the process of oxidation, nitridation, or oxynitridation on each metal sublayer, degradation of the spacer layer is reduced or eliminated such that the desirable soft magnetics of the sensing layers in the read sensor are maintained.
摘要翻译：公开了具有由具有周围氧化金属子层的光刻定义的导电通孔制成的约束电流路径的电流垂直平面（CPP）读取传感器及其制造方法。在一个说明性示例中，形成包括导电间隔层的传感器堆叠结构的至少一部分。然后将金属（例如Ta）子层沉积在间隔层上并与其相邻，随后是氧化工艺，氮化工艺和氧氮化工艺中的一种，以从金属子层产生绝缘体（例如TaO x）。根据需要重复金属亚层沉积和氧化/氮化/氧氮化处理以形成具有合适厚度的绝缘体。接下来，在绝缘体上形成露出绝缘体的一个或多个部分的抗蚀剂结构。在抗蚀剂结构就位的情况下，通过蚀刻去除暴露的绝缘体材料，以形成穿过绝缘体的一个或多个孔向下到间隔层。导电材料随后沉积在一个或多个孔内以形成电流约束结构的一个或多个光刻定义的导电通孔。有利地，光刻定义的导电通孔增加读取传感器在感测层的区域中的电流密度，从而同时增加其电阻和磁阻。通过使用在每个金属子层上的氧化，氮化或氧氮化的过程，间隔层的劣化被减少或消除，使得保持读取传感器中感测层的期望的软磁性。

47. 发明申请

US20090251829A1 Seed layer for TMR or CPP-GMR sensor 有权
标题翻译：种子层用于TMR或CPP-GMR传感器
公开(公告)号：US20090251829A1
公开(公告)日：2009-10-08
申请号：US12080277
申请日：2008-04-02
申请人： Kunliang Zhang , Tong Zhao , Hui-Chuan Wang , Min Li
发明人： Kunliang Zhang , Tong Zhao , Hui-Chuan Wang , Min Li
IPC分类号： G11B5/33
CPC分类号： G11B5/398 , B82Y10/00 , B82Y25/00 , B82Y40/00 , G01R33/098 , G11B5/3909 , G11B5/3912 , G11B5/3983 , H01F10/30 , H01F10/3259 , H01F10/3272 , H01F41/307 , H01L43/10 , H01L43/12
摘要： A composite seed layer that reduces the shield to shield distance in a read head while improving Hex and Hex/Hc is disclosed and has a SM/A/SM/B configuration in which the SM layers are soft magnetic layers, the A layer is made of at least one of Co, Fe, Ni, and includes one or more amorphous elements, and the B layer is a buffer layer that contacts the AFM layer in the spin valve. The SM/A/SM stack together with the S1 shield forms an effective shield such that the buffer layer serves as the effective seed layer with a thickness as low as 5 Angstroms while maintaining a blocking temperature of 260° C. in the AFM layer. The lower SM layer may be omitted. Examples of the amorphous layer are CoFeB, CoFeZr, CoFeNb, CoFeHf, CoFeNiZr, CoFeNiHf, and CoFeNiNbZr while the buffer layer may be Cu, Ru, Cr, Al, or NiFeCr.
摘要翻译：公开了一种复合种子层，其在改善Hex和Hex / Hc的同时减小了读头中屏蔽距离的屏蔽，并具有SM / A / SM / B构造，其中SM层是软磁性层，制成A层的Co，Fe，Ni中的至少一种，并且包括一个或多个非晶元素，并且B层是与自旋阀中的AFM层接触的缓冲层。 SM / A / SM堆叠与S1屏蔽形成有效的屏蔽，使得缓冲层用作有效种子层，其厚度低至5埃，同时在AFM层中保持260℃的阻挡温度。可以省略下层SM层。非晶层的实例是CoFeB，CoFeZr，CoFeNb，CoFeHf，CoFeNiZr，CoFeNiHf和CoFeNiNbZr，而缓冲层可以是Cu，Ru，Cr，Al或NiFeCr。

48. 发明申请

US20090225477A1 MAGNETORESISTANCE EFFECT ELEMENT, MAGNETIC HEAD, MAGNETIC REPRODUCING APPARATUS, AND MAGNETIC MEMORY 有权
标题翻译：磁阻效应元件，磁头，磁力再生装置和磁记忆
公开(公告)号：US20090225477A1
公开(公告)日：2009-09-10
申请号：US12468467
申请日：2009-05-19
申请人： Hideaki FUKUZAWA , Hiromi Yuasa , Hiromi Fuke , Hitoshi Iwasaki , Masashi Sahashi
发明人： Hideaki FUKUZAWA , Hiromi Yuasa , Hiromi Fuke , Hitoshi Iwasaki , Masashi Sahashi
IPC分类号： G11B5/33 , G11B5/39
CPC分类号： H01L43/08 , B82Y25/00 , B82Y40/00 , G01R33/093 , G11B5/3906 , G11B5/398 , G11B5/3983 , G11C11/16 , G11C11/161 , H01F10/1936 , H01F10/3254 , H01F10/3259 , H01F10/3268 , H01F10/3281 , H01F41/303 , H01F41/325 , H01L27/224 , H01L27/228 , Y10T428/1121
摘要： A magnetoresistance effect element comprises a magnetoresistance effect film and a pair of electrode. The magnetoresistance effect film having a first magnetic layer whose direction of magnetization is substantially pinned in one direction; a second magnetic layer whose direction of magnetization changes in response to an external magnetic field; a nonmagnetic intermediate layer located between the first and second magnetic layers; and a film provided in the first magnetic layer, in the second magnetic layer, at a interface between the first magnetic layer and the nonmagnetic intermediate layer, and/or at a interface between the second magnetic layer and the nonmagnetic intermediate layer, the film having a thickness not larger than 3 nanometers, and the film has as least one selected from the group consisting of oxide, nitride, oxinitride, phosphide, and fluoride. The pair of electrodes are electrically connected to the magnetoresistance effect film to supply a sense current perpendicularly to a film plane of said magnetoresistance effect film.
摘要翻译：磁阻效应元件包括磁阻效应膜和一对电极。具有第一磁性层的磁阻效应膜，其磁化方向基本上在一个方向上被固定; 其磁化方向响应于外部磁场而变化的第二磁性层; 位于第一和第二磁性层之间的非磁性中间层; 以及设置在所述第一磁性层中，在所述第二磁性层中，在所述第一磁性层和所述非磁性中间层之间的界面处和/或在所述第二磁性层和所述非磁性中间层之间的界面处设置的膜，所述膜具有厚度不大于3纳米，该膜具有选自氧化物，氮化物，氮氧化物，磷化物和氟化物中的至少一种。一对电极电连接到磁阻效应膜，以提供垂直于所述磁阻效应膜的膜平面的感测电流。

49. 发明申请

US20090141408A1 MAGNETORESISTANCE EFFECT ELEMENT, MAGNETIC HEAD, MAGNETIC REPRODUCING APPARATUS, AND MAGNETIC MEMORY 有权
标题翻译：磁阻效应元件，磁头，磁力再生装置和磁记忆
公开(公告)号：US20090141408A1
公开(公告)日：2009-06-04
申请号：US12366972
申请日：2009-02-06
申请人： Hideaki Fukuzawa , Hiromi Yuasa , Hiromi Fuke , Hitoshi Iwasaki , Masashi Sahashi
发明人： Hideaki Fukuzawa , Hiromi Yuasa , Hiromi Fuke , Hitoshi Iwasaki , Masashi Sahashi
IPC分类号： G11B5/127 , G11B5/33
CPC分类号： H01L43/08 , B82Y25/00 , B82Y40/00 , G01R33/093 , G11B5/3906 , G11B5/398 , G11B5/3983 , G11C11/16 , G11C11/161 , H01F10/1936 , H01F10/3254 , H01F10/3259 , H01F10/3268 , H01F10/3281 , H01F41/303 , H01F41/325 , H01L27/224 , H01L27/228 , Y10T428/1121
摘要： A magnetoresistance effect element comprises a magnetoresistance effect film and a pair of electrode. The magnetoresistance effect film having a first magnetic layer whose direction of magnetization is substantially pinned in one direction; a second magnetic layer whose direction of magnetization changes in response to an external magnetic field; a nonmagnetic intermediate layer located between the first and second magnetic layers; and a film provided in the first magnetic layer, in the second magnetic layer, at a interface between the first magnetic layer and the nonmagnetic intermediate layer, and/or at a interface between the second magnetic layer and the nonmagnetic intermediate layer, the film having a thickness not larger than 3 nanometers, and the film has as least one selected from the group consisting of nitride, oxinitride, phosphide, and fluoride. The pair of electrodes are electrically connected to the magnetoresistance effect film to supply a sense current perpendicularly to a film plane of said magnetoresistance effect film.
摘要翻译：磁阻效应元件包括磁阻效应膜和一对电极。具有第一磁性层的磁阻效应膜，其磁化方向基本上在一个方向上被固定; 其磁化方向响应于外部磁场而变化的第二磁性层; 位于第一和第二磁性层之间的非磁性中间层; 以及设置在所述第一磁性层中，在所述第二磁性层中，在所述第一磁性层和所述非磁性中间层之间的界面处和/或在所述第二磁性层和所述非磁性中间层之间的界面处设置的膜，所述膜具有厚度不大于3纳米，该膜具有选自氮化物，氮氧化物，磷化物和氟化物中的至少一种。一对电极电连接到磁阻效应膜，以提供垂直于所述磁阻效应膜的膜平面的感测电流。

50. 发明申请

US20080106826A1 CURRENT-PERPENDICULAR-TO-PLANE MAGNETORESISTANCE EFFECT DEVICE WITH DOUBLE CURRENT DOUBLE LAYERS 审中-公开
标题翻译：具有双电流双层的电流 - 平面磁平面效应器件
公开(公告)号：US20080106826A1
公开(公告)日：2008-05-08
申请号：US11965177
申请日：2007-12-27
申请人： Tomomi Funayama , Masayuki Takagishi , Katsuhiko Koui , Kohichi Tateyama
发明人： Tomomi Funayama , Masayuki Takagishi , Katsuhiko Koui , Kohichi Tateyama
IPC分类号： G11B5/33
CPC分类号： B82Y25/00 , B82Y10/00 , G01R33/093 , G11B5/3906 , G11B5/398 , G11B5/3983 , G11B2005/3996 , H01F10/3259 , H01F10/3263 , H01L43/08
摘要： A magnetoresistance effect element of the dual spin valve type using a current-perpendicular-to-the-plane (CPP) system where a sensing current flows perpendicular to the stacked faces of a plurality of conductive layers, the magnetoresistance effect element comprises a first unit which includes a free layer and a first pinning layer, a second unit which includes the free layer shared with the first unit and a second pinning layer, a first current control layer which is provided in the first unit and limits the flow quantity of the sensing current, and a second current control layer which is provided in the second unit and limits the flow quantity of the sensing current.
摘要翻译：使用电流垂直于平面（CPP）系统的双自旋阀类型的磁阻效应元件，其中感测电流垂直于多个导电层的堆叠面流动，磁阻效应元件包括第一单元其包括自由层和第一钉扎层，第二单元，其包括与第一单元共享的自由层和第二钉扎层，第一电流控制层，设置在第一单元中并限制感测的流量电流和第二电流控制层，其设置在第二单元中并限制感测电流的流量。

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